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DCK40I1200HA
Silicon Carbide Schottky Diode, Single, 1.2 kV, 96 A, 192 nC, TO-247
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- Manufacturer: LITTELFUSE
- Product type: Silicon Carbide Schottky Diodes
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 2 Pin
- Product Range: -
- Qualification: -
- Diode Mounting: Through Hole
- Diode Case Style: TO-247
- Diode Configuration: Single
- Average Forward Current: 96A
- Total Capacitive Charge: 192nC
- Operating Temperature Max: 175°C
- Repetitive Peak Reverse Voltage: 1.2kV
| Delivery and price | |
|---|---|
| Units per pack | 250 |
| Price | 4.81 € |
| Current stock | 200+ |
| Lead time | 30 days |
Datasheet
Silicon Carbide Schottky Diode **Datasheet** **DCK40I1200HA** 1200 V, 40 A SiC Schottky Diode **==> picture [15 x 6] intentionally omitted <==** **----- Start of picture text -----**<br> RoHS<br>**----- End of picture text -----**<br> ## **Features** - Max junction temperature of 175 °C - High surge current capacity - Extremely fast reverse recovery time - High-frequency operation - Temperature independent switching behavior - Positive temperature coefficient on VF ## **Applications** - Solar power boost - Inverter free wheeling diodes - Vienna 3-Phase PFC - Switching mode power supplies ## **Pinout Diagram** TO-247-2L **Product Summary** Tab **Characteristic Value Unit** Case VRRM 1200 V IF (Tc = 142 °C) 40 A Qc 192 nC ~~>~~ C (1) A (2) ~~YY~~ 1 2 **1:** Cathode; **2:** Anode; **Tab:** Case © 2025 Littelfuse, Inc. **1** Specifications are subject to change without notice. Pdlitteuse ~~=~~ Revised: XZ 01/13/2025 © 2025 Littelfuse, Inc. Specifications are subject to change without notice. Revised: XZ 01/13/2025 Silicon Carbide Schottky Diode **Datasheet** DCK40I1200HA **Maximum Ratings** (Tc = 25 °C unless otherwise specified) **==> picture [542 x 20] intentionally omitted <==** **----- Start of picture text -----**<br> Symbol Characteristic Conditions Value Unit<br>**----- End of picture text -----**<br> |**Symbol**|**Characteristic**|**Conditions**|**Conditions**|**Value**|**Unit**| |---|---|---|---|---|---| ||||||| |VRRM|Repetitive peak reverse voltage|–||1200|V| |VDC|DC blocking voltage|–||1200|V| |IF|Continuous forward current|–|Tc= 25°C|96|A| ||||Tc= 135°C|46.2|| ||||Tc= 142°C|40|| |IFSM|Non-repetitive surge forward current|Sine halfwave @ Tc= 25°C, tp= 10|ms|260|A| |IFRM|Repetitive peak forward current<br>(Frequency = 0.1 Hz, 100 cycles)|Sine halfwave @ Tc= 25°C, tp= 10|ms|220|A| |Ptot|Total power dissipation|–|Tc= 25°C|428|W| ||||Tc= 150°C|71.4|| |I2t|I2t|Tc= 25 °C, tp= 10 ms||392|A2s| |Tvj|Virtual junction temperature range|–||–55 to 175|°C| |Tstg|Storage temperature range|–||–55 to 175|°C| |M|Mounting torque|M3 screw||0.7|Nm| **Note:** Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ## **Thermal Characteristics** |**Symbol**|**Characteristic**|**Value**|**Value**|**Value**|**Unit**| |---|---|---|---|---|---| |||**Min.**|**Typ.**|**Max.**|| |Rth(j-c)|Thermal resistance, junction to caseFig.7|–|0.35|–|K/W| ## **Electrical Characteristics** (Tvj = 25 °C unless otherwise specified) **==> picture [542 x 35] intentionally omitted <==** **----- Start of picture text -----**<br> Value<br>Symbol Characteristic Conditions Unit<br>Min. Typ. Max.<br>**----- End of picture text -----**<br> |**Symbol**|**Characteristic**|**Conditions**|**Conditions**|**Value**|**Value**|**Value**|**Unit**| |---|---|---|---|---|---|---|---| |||||**Min.**|**Typ.**|**Max.**|| ||||||||| |VF|Forward voltageFig.1|IF= 40A|Tvj= 25 °C|–|1.48|1.80|V| ||||Tvj= 175 °C|–|2.30|3.00|| |IR|Reverse currentFig.2|VR= 1200 V|Tvj= 25 °C|–|10|300|μA| ||||Tvj= 175 °C|–|60|1000|| |C|Total capacitanceFig.3|VR= 1 V, f = 1 MHz||–|2075|–|pF| |||VR= 400 V, f = 1 MHz||–|180|–|| |||VR= 800 V, f = 1 MHz||–|137|–|| |Qc|Total capacitive chargeFig.4|VR= 800 V, Tvj= 25 °C, Qc= ∫<br>VR<br>0 C(V)dV||–|192|–|nC| |Ec|Capacitance stored energyFig.5|VR= 800 V, Tvj= 25 °C, Ec= ∫<br>VR<br>0 C(V)•VdV||–|54.9|–|μJ| © 2025 Littelfuse, Inc. Specifications are subject to change without notice. Revised: XZ 01/13/2025 **2** Silicon Carbide Schottky Diode **Datasheet** DCK40I1200HA ## **Characteristic Curves** **==> picture [260 x 196] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 1. Typical Forward Characteristics<br>80<br>70<br>–55 ºC<br>60 25 ºC<br>75 ºC<br>50<br>125 ºC<br>150 ºC<br>40<br>175 ºC<br>30<br>20<br>10<br>0<br>0 0.5 1 1.5 2 2.5 3<br>VF (V)<br>(A)<br>IF<br>**----- End of picture text -----**<br> **==> picture [147 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 3. Capacitance vs. Reverse Voltage<br>**----- End of picture text -----**<br> **==> picture [247 x 159] intentionally omitted <==** **----- Start of picture text -----**<br> 3000<br>2500<br>2000<br>1500<br>1000<br>500<br>0<br>0.01 0.1 1 10 100 1000<br>VR (V)<br>C (pF)<br>**----- End of picture text -----**<br> **==> picture [260 x 196] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 5. Capacitance Stored Energy<br>60<br>55<br>50<br>45<br>40<br>35<br>30<br>25<br>20<br>15<br>10<br>5<br>0<br>0 200 400 600 800<br>VR (V)<br> (μJ)Ec<br>**----- End of picture text -----**<br> **==> picture [260 x 404] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 2. Typical Reverse Characteristics<br>1E-04<br>175 °C<br>150 °C<br>1E-05 125 °C<br>75 °C<br>25 °C<br>–55 °C<br>1E-06<br>1E-07<br>1E-08<br>200 400 600 800 1000 1200 1400 1600<br>VR (V)<br>Fig. 4. Total Capacitive Charge vs. Reverse Voltage<br>200<br>180<br>160<br>140<br>120<br>100<br>80<br>60<br>40<br>20<br>0<br>0 200 400 600 800<br>VR (V)<br> (A)<br>IR<br> (nC)Qc<br>**----- End of picture text -----**<br> **==> picture [260 x 196] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 6. Power Derating<br>450<br>400<br>350<br>300<br>250<br>200<br>150<br>100<br>50<br>0<br>25 50 75 100 125 150 175<br>Tc (°C)<br> (W)<br>tot<br>P<br>**----- End of picture text -----**<br> © 2025 Littelfuse, Inc. Specifications are subject to change without notice. Revised: XZ 01/13/2025 **3** Silicon Carbide Schottky Diode **Datasheet** DCK40I1200HA **==> picture [260 x 195] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 7. Transient Thermal Impedance<br>1E+00<br>1E-01<br>D = 0.5<br>0.3<br>0.1<br>1E-02 0.05<br>0.02<br>0.01<br>Single Pulse<br>1E-03<br>1E-04<br>1E-06 1E-05 1E-04 1E-03 1E-02 1E-01 1E+00<br>tp (s)<br>(K/W)<br>th(j-c)<br>Z<br>**----- End of picture text -----**<br> **==> picture [260 x 195] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 8. Forward Current vs. Case Temperature<br>200<br>180<br>160<br>140 D = 0.3<br>0.5<br>120 0.7<br>100 1.0<br>80<br>60<br>40<br>20<br>0<br>25 50 75 100 125 150 175<br>Tc (ºC)<br>I (A)F<br>**----- End of picture text -----**<br> ## **Diode V Model for Simulation F** **==> picture [155 x 48] intentionally omitted <==** **----- Start of picture text -----**<br> I V R<br>0 0<br>**----- End of picture text -----**<br> VF(Tj) = V0 + IR0 V0 = 1 × 10[–6] • T j2 – 0.0013 • Tj + 0.968 R0 = 4 × 10[–7] • T j2 + 7 × 10–5 0.0001 • Tj + 0.0112 ## **Notes** - Tj is the junction temperature in ºC - Range valid from 25 ºC to 175 ºC - Model represents performance of a typical chart ## **Part Number and Marking** DCK40I1200HA = Part Material Number YY = Year WW = Work Week **==> picture [69 x 65] intentionally omitted <==** **----- Start of picture text -----**<br> DCK40I1200HA<br>YYWWZ<br>XXXX<br>**----- End of picture text -----**<br> Z = Assembly Location XXXX = Lot Traceability © 2025 Littelfuse, Inc. Specifications are subject to change without notice. Revised: XZ 01/13/2025 **4** Silicon Carbide Schottky Diode **Datasheet** DCK40I1200HA ## **Part Outline Drawing** TO-247-2L **==> picture [259 x 604] intentionally omitted <==** **----- Start of picture text -----**<br> E A<br>A2<br>ee _ —s<br>Q<br>fer -<br>E2 D<br>1 2<br>| |<br>[ | ! A1<br>L1 Exposed Cu<br>L<br>|<br>b2 ~ b It c<br>_<br>E1 D2<br>S<br>D1<br>ØP1<br>NL<br>ØP<br>tS<br>D D |<br>A_|!|_4<br>t e b1, b3 —<br>(c) c1<br>C C<br>|, e a<br>i b, b2 _ |<br>Section C–C, D–D<br>e<br>**----- End of picture text -----**<br> |**Symbol**<br>A<br>A1|**Inches**<br>**Min.**<br>**Typical**<br>**Max.**<br>0.190<br>–<br>0.205<br>0.087<br>–<br>0.102<br>~~Td~~<br>~~ee~~||**Millimeters**<br>**Min.**<br>**Typical**<br>**Max**<br>4.83<br>–<br>5.21<br>2.20<br>–<br>2.60|**Millimeters**<br>**Min.**<br>**Typical**<br>**Max**<br>4.83<br>–<br>5.21<br>2.20<br>–<br>2.60|**Millimeters**<br>**Min.**<br>**Typical**<br>**Max**<br>4.83<br>–<br>5.21<br>2.20<br>–<br>2.60| |---|---|---|---|---|---| |A2<br>b<br>b1|0.059<br>–<br>0.098<br>0.039<br>–<br>0.055<br>0.039<br>–<br>0.053<br>~~ee~~<br>~~ee~~||1.50<br>1.00<br>0.99|–<br>–<br>–|2.49<br>1.40<br>1.35| |b2|0.071<br>–<br>0.095||1.80|–|2.41| |b3<br>c<br>c1<br>D<br>D1<br>D2<br>E<br>E1<br>E2<br>e<br>L<br>L1<br>ØP|0.065<br>–<br>0.094<br>1.65<br>–<br>0.020<br>–<br>0.028<br>0.50<br>–<br>0.015<br>–<br>0.028<br>0.38<br>–<br>0.799<br>–<br>0.831<br>20.30<br>–<br>0.515<br>–<br>–<br>13.08<br>–<br>0.020<br>–<br>0.053<br>0.51<br>–<br>0.608<br>–<br>0.635<br>15.45<br>–<br>0.516<br>–<br>–<br>13.10<br>–<br>0.145<br>–<br>0.216<br>3.68<br>–<br>0.214 BSC<br>5.44 BSC<br>0.780<br>–<br>0.827<br>19.80<br>–<br>–<br>–<br>0.177<br>–<br>–<br>0.138<br>–<br>0.146<br>3.50<br>–<br>~~ed~~<br>~~4}~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~—t_t—_—_t—~~<br>~~ee~~<br>~~ee~~<br>~~ee~~||||2.39<br>0.70<br>0.70<br>21.10<br>–<br>1.35<br>16.13<br>–<br>5.49<br>21.00<br>4.50<br>3.70| |ØP1<br>Q|–<br>–<br>0.291<br>0.212<br>–<br>0.244<br>~~ee~~||–<br>5.39|–<br>–|7.40<br>6.20| |S|0.238<br>–<br>0.248||6.04|–|6.30| ## **Note:** **1.** Package Reference: JEDEC TO247, Variation AD **2.** Slot required, notch may be rounded or rectangular **3.** Dimension D&E do not include mold flash **4.** Subject to change without notice ## **Disclaimer Notice** Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Part of: Read complete Disclaimer Notice at http://www.littelfuse.com/disclaimer-electronics. © 2025 Littelfuse, Inc. Specifications are subject to change without notice. Revised: XZ 01/13/2025 **5**
Updated at April 29, 2026
Founded in 1927 and headquartered in Chicago, Illinois, Littelfuse is a premier global manufacturer of circuit protection, power control, and sensing technologies. Widely recognized for pioneering the first small, fast-acting protective fuse, the company has grown into an industry leader whose highly reliable components are essential to modern industrial, transportation, and consumer electronics applications worldwide. At the core of the Littelfuse portfolio is an expansive and industry-leading range of circuit protection solutions. This encompasses a massive selection of traditional fuses, fuse holders, and resettable PTC thermistor fuses designed to safely interrupt overcurrent conditions. To defend against electrical overstress, Littelfuse also provides advanced transient voltage suppression (TVS) technologies, including thousands of specialized TVS diodes, TVS varistors, and gas discharge tubes (GDTs) that ensure robust defense against voltage spikes and environmental hazards. Beyond its foundational protection components, Littelfuse manufactures a diverse array of discrete semiconductors, sensors, and switching devices. Engineers rely on their high-performance thyristors, including TRIACs and SCRs, alongside power-efficient Schottky diodes and MOSFETs for demanding power control applications. Complemented by precision proximity sensors and highly reliable reed and solid-state relays, Littelfuse delivers the critical building blocks required for secure, efficient, and complete system design.
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