DAN222T1G

## DAN222, NSVDAN222 

## Common Cathode Silicon Dual Switching Diode 

This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SOT−416/SC−75 package which is designed for low power surface mount applications, where board space is at a premium. 

## **Features** 

- Fast trr 

- Low CD 

- NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable 

## **http://onsemi.com** 

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CATHODE<br>3<br>1 2<br>ANODE<br>**----- End of picture text -----**<br>


- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 

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1<br>SC−75/SOT−416<br>CASE 463<br>STYLE 3<br>**----- End of picture text -----**<br>


**MAXIMUM RATINGS** (TA = 25 ° C) 

|**Rating**<br>**Symbol**<br>**Value**<br>**Unit**<br>Reverse Voltage<br>VR<br>80<br>Vdc<br>Peak Reverse Voltage<br>VRM<br>80<br>Vdc<br>Forward Current<br>IF<br>100<br>mAdc<br>Peak Forward Current<br>IFM<br>300<br>mAdc<br>Peak Forward Surge Current (Note 1)<br>IFSM<br>2.0<br>Adc<br>~~——-—~~|**Rating**<br>**Symbol**<br>**Value**<br>**Unit**<br>Reverse Voltage<br>VR<br>80<br>Vdc<br>Peak Reverse Voltage<br>VRM<br>80<br>Vdc<br>Forward Current<br>IF<br>100<br>mAdc<br>Peak Forward Current<br>IFM<br>300<br>mAdc<br>Peak Forward Surge Current (Note 1)<br>IFSM<br>2.0<br>Adc<br>~~——-—~~|**SC−75/SOT−416**<br>**CASE 463**<br>**STYLE 3**<br>N9 M<br>**MARKING DIAGRAM**|**SC−75/SOT−416**<br>**CASE 463**<br>**STYLE 3**<br>N9 M<br>**MARKING DIAGRAM**|**SC−75/SOT−416**<br>**CASE 463**<br>**STYLE 3**<br>N9 M<br>**MARKING DIAGRAM**|**SC−75/SOT−416**<br>**CASE 463**<br>**STYLE 3**<br>N9 M<br>**MARKING DIAGRAM**|**SC−75/SOT−416**<br>**CASE 463**<br>**STYLE 3**<br>N9 M<br>**MARKING DIAGRAM**|**SC−75/SOT−416**<br>**CASE 463**<br>**STYLE 3**<br>N9 M<br>**MARKING DIAGRAM**|**SC−75/SOT−416**<br>**CASE 463**<br>**STYLE 3**<br>N9 M<br>**MARKING DIAGRAM**|**SC−75/SOT−416**<br>**CASE 463**<br>**STYLE 3**<br>N9 M<br>**MARKING DIAGRAM**|
|---|---|---|---|---|---|---|---|---|---|
|**THERMAL CHARACTERISTICS**||||||||||
|**Characteristic**<br>**Symbol**<br>**Max**<br>**Unit**<br>Power Dissipation<br>PD<br>150<br>mW<br>Junction Temperature<br>TJ<br>150<br>°C/W<br>Storage Temperature Range<br>Tstg<br>−55 to +150<br>°C<br>N9<br>= Specific Device Code<br>M<br>= Date Code*<br>= Pb−Free Package<br>1<br>(Note: Microdot may be in either location)<br>*Date Code orientation may vary depending<br>~~|~~||||||||||
|Stresses exceeding Maximum Ratings may damage the device. Maximum||upon manufacturing location.||upon manufacturing location.||||||
|Ratings are stress ratings only. Functional operation above the Recommended||||||||||
|Operating Conditions is not implied. Extended exposure to stresses above the||||||||||
|Recommended Operating Conditions may affect device reliability.||||||||||
|1. t = 1 S||**ORDERING INFORMATION**||||||||



**Device Package Shipping**[†] DAN222G SC−75 3000 / Tape & Reel (Pb−Free) DAN222T1G SC−75 3000 / Tape & Reel (Pb−Free) NSVDAN222T1G SC−75 3000 / Tape & Reel (Pb−Free) ~~===~~ †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

Publication Order Number: 

**1** 

© Semiconductor Components Industries, LLC, 2013 **September, 2013 − Rev. 7** 

**DAN222/D** 

**DAN222, NSVDAN222** 

**ELECTRICAL CHARACTERISTICS** (TA = 25 ° C) 

|**ELECTRICAL CHARACTERISTIC**|**S**(TA= 25°C)|||||
|---|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Condition**|**Min**|**Max**|**Unit**|
|Reverse Voltage Leakage Current|IR|VR= 70 V|−|0.1|�Adc|
|Forward Voltage|VF|IF= 100 mA|−|1.2|Vdc|
|Reverse Breakdown Voltage|VR|IR= 100�A|80|−|Vdc|
|Diode Capacitance|CD|VR= 6.0 V, f = 1.0 MHz|−|3.5|pF|
|Reverse Recovery Time|trr(Note 2)|IF= 5.0 mA, VR= 6.0 V, RL= 100�, Irr= 0.1 IR|−|4.0|ns|



2. trr Test Circuit on following page. 

## **TYPICAL ELECTRICAL CHARACTERISTICS** 

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100 10<br>TA = 150°C<br>TA = 85°C TA = 125°C<br>1.0<br>10<br>TA = -�40°C<br>TA = 85°C<br>0.1<br>1.0 TA = 25°C TA = 55°C<br>0.01<br>TA = 25°C<br>0.1 0.001<br>0.2 0.4 0.6 0.8 1.0 1.2 0 10 20 30 40 50<br>VF, FORWARD VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)<br>Figure 1. Forward Voltage Figure 2. Reverse Current<br>1.0<br>0.9<br>0.8<br>0.7<br>0.6<br>0 2 4 6 8<br>VR, REVERSE VOLTAGE (VOLTS)<br>A)<br>μ<br>IR, REVERSE CURRENT (<br>IF, FORWARD CURRENT (mA)<br>CD, DIODE CAPACITANCE (pF)<br>**----- End of picture text -----**<br>


**Figure 3. Diode Capacitance** 

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**2** 

**DAN222, NSVDAN222** 

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tr tp trr<br>IF t<br>t<br>10%<br>RL Irr = 0.1 IR<br>A<br>90% IF = 5.0 mA<br>VR tp = 2  � s RVRL = 100  = 6 V �<br>tr = 0.35 ns<br>RECOVERY TIME EQUIVALENT TEST CIRCUIT INPUT PULSE OUTPUT PULSE<br>**----- End of picture text -----**<br>


**RECOVERY TIME EQUIVALENT TEST CIRCUIT** 

**Figure 4. Reverse Recovery Time Test Circuit for the DAN222** 

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**3** 

**DAN222, NSVDAN222** 

## **PACKAGE DIMENSIONS** 

**SC−75/SOT−416** CASE 463 ISSUE F 

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−E− NOTES:<br>1. DIMENSIONING AND TOLERANCING PER ANSI<br>T o T Y14.5M, 1982.<br>2. CONTROLLING DIMENSION: MILLIMETER.<br>2<br>MILLIMETERS INCHES<br>3<br>e −D− DIM MIN NOM MAX MIN NOM MAX<br>A 0.70 0.80 0.90 0.027 0.031 0.035<br>1<br>A1 0.00 0.05 0.10 0.000 0.002 0.004<br>b 3 PL<br>b 0.15 0.20 0.30 0.006 0.008 0.012<br>0.20 (0.008) M D C 0.10 0.15 0.25 0.004 0.006 0.010<br>Hs HE 0.20 (0.008) E D 1.55 1.60 1.65 0.059 0.063 0.067<br>a S=SS=== E 0.70 0.80 0.90 0.027 0.031 0.035<br>e 1.00 BSC 0.04 BSC<br>L 0.10 0.15 0.20 0.004 0.006 0.008<br>HE 1.50 1.60 1.70 0.061 0.063 0.065<br>C A STYLE 3:<br>PIN 1. ANODE<br> 2. ANODE<br> 3. CATHODE<br>Jo L A1<br>SOLDERING FOOTPRINT*<br>0.356<br>0.014<br>aT<br>1.803 0.787<br>0.071 0.031<br>7 Mm _<br>_ 0.508 Le<br>0.020 1.000<br>a 0.039<br>SCALE 10:1 mm<br>(— inches<br>**----- End of picture text -----**<br>


*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

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## **LITERATURE FULFILLMENT** : 

**DAN222/D** 

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