D5V0FS4U10LP-7

**D5V0FS4U10LP** > 

## **4 CHANNEL LOW CAPACITANCE TVS DIODE ARRAY** 

## **Product Summary** 

|**VBR(Min)**|**IPP(Max)**|C**I/O(Typ)**|
|---|---|---|
|5.5V|3.5A|0.45pF|



## **Features** 

- Clamping Voltage: 6V at 16A TLP 

- IEC 61000-4-2 (ESD): Air — ±8kV, Contact — ±8kV 

- IEC 61000-4-5 (Lightning):  3.5A (8/20µs) 

## **Description** 

The D5V0FS4U10LP is a high-performance device suitable for protecting four high speed I/Os. These devices are assembled in U- DFN2510-10 package and have high ESD surge capability, low ESD clamping voltage and ultra-low capacitance. 

## **Applications** 

Typically used at high-speed ports such as USB 3.0, USB 3.1, Serial ATA, Display port. 

- 4 Channels of ESD Protection 

- Ultra-Low Channel Input Capacitance of 0.45pF Typical 

- TLP Dynamic Resistance: 0.25Ω 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

## **Mechanical Data** 

- Case: U-DFN2510-10 

- Case Material: Molded Plastic, ―Green‖ Molding Compound. 

- UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminals:  NiPdAu over Copper Leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 © **e4** 

- Weight: 0.038 grams (Approximate) 

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U-DFN2510-10<br>Pin1  Pin2  Pin4  Pin5<br>Pin # Description  10 9 8 7 6<br>1, 2, 4, 5 I/O<br>6, 7, 9, 10 No Connection<br>3, 8 Vss<br>1 2 3 4 5<br>3,8<br>Pin Description (Top View)  Device Schematic<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 4) 

|**Part Number**|**Compliance**|**Marking**|**Reel Size(inches)**|**Tape Width(mm)**|**Quantity**|
|---|---|---|---|---|---|
|D5V0FS4U10LP-7|Standard|NZ1|7|8|3,000/Tape & Reel|



Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 

   2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

## **Marking Information** 

U-DFN2510-10 

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NZ1 = Product Type Marking Code<br>YM = Date Code Marking<br>TF2NZ1  YM<br>Y = Year (ex: E = 2017)<br>M = Month (ex: 9 = September)<br>Date Code Key<br>Year 2017 2018 2019 2020  2021  2022<br>Code E  F  G  H  I  J<br>——<br>Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec<br>————————— Code 1  2  3  4  5  6  7  8  9  O  N  D<br>D5V0FS4U10LP  1 of 5  September 2017<br>Document number: DS39520  Rev. 1 – 2 www.diodes.com   © Diodes Incorporated<br>**----- End of picture text -----**<br>


September 2017 © Diodes Incorporated 

**D5V0FS4U10LP** 

**Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)||||
|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|**Conditions**|
|Peak Pulse Current,per IEC 61000-4-5|IPP|3.5|A|I/O to VSS, 8/20µs|
|Peak Pulse Power, per IEC 61000-4-5|PPP|20|W|I/O to VSS, 8/20µs|
|ESD Protection – Contact Discharge,per IEC 61000-4-2|VESD_CONTACT|±8|kV|I/O to VSS|
|ESD Protection – Air Discharge, per IEC 61000-4-2|VESD_AIR|±8|kV|I/O to VSS|



## **Thermal Characteristics** 

|**Thermal Characteristics**||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Power Dissipation Typical (Note 5)|PD|350|mW|
|Thermal Resistance, Junction to Ambient Typical (Note 5)|RJA|360|°C/W|
|Operating and Storage Temperature Range|TJ,TSTG|-55 to +150|°C|



**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**|**Symbol**|**Min**|**Typ**<br>~~OO~~|**Max**<br>~~OO~~|**Unit**<br>~~OO~~|**Test Conditions**|
|Reverse WorkingVoltage<br>~~DO~~|**Symbol**<br>VRWM<br>~~DO~~|—<br>~~DO~~|**Typ**<br>—<br>~~DO~~<br>~~OO~~|5<br>~~DO~~<br>~~OO~~|V<br>~~DO~~<br>~~OO~~|—<br>~~DO~~|
|Reverse Current<br>~~Poe~~|IR<br>~~Poe~~|—<br>~~Poe~~|—<br>~~OO~~<br>~~Poe~~|1<br>~~OO~~<br>~~Poe~~|μA<br>~~OO~~<br>~~Poe~~|VR=5V,I/O toVSS<br>~~Poe~~|
|Reverse Breakdown Voltage<br>~~Poa~~|VBR<br>~~Poa~~|5.5<br>~~Poa~~|7.0<br>~~Poa~~<br>~~OO~~|—<br>~~Poa~~<br>~~OO~~|V<br>~~Poa~~<br>~~OO~~|IR= 1mA,I/O toVSS<br>~~Poa~~|
|Forward ClampingVoltage<br>~~DO~~|VF<br>~~DO~~|-1.0<br>~~DO~~<br>~~QD~~|-0.85<br>~~DO~~<br>~~OO~~<br>~~QOS~~|—<br>~~DO~~<br>~~OO~~<br>~~(OU~~|V<br>~~DO~~<br>~~OO~~<br>~~(~~|IF= -15mA,I/O toVSS<br>~~DO~~<br>~~(~~|
|HoldingReverse Voltage<br>~~sD~~<br>~~GOO~~|VHOLD<br>~~sD~~<br>~~GOO~~|—<br>~~sD~~<br>~~QD~~<br>~~GOO~~|1.19<br>~~OO~~<br>~~sD~~<br>~~QOS~~<br>~~GOO~~|—<br>~~OO~~<br>~~sD~~<br>~~(OU~~<br>~~GOO~~|V<br>~~OO~~<br>~~sD~~<br>~~(~~<br>~~(OO~~|I/O toVSS<br>~~sD~~<br>~~(~~<br>~~(OO~~|
|HoldingReverse Current<br>~~GOO~~<br>~~PO~~<br>~~reeaeeee~~|IHOLD<br>~~GOO~~<br>~~reeaeeee~~|—<br>~~QD~~<br>~~GOO~~|90<br>~~QOS ~~<br>~~GOO~~|—<br> ~~(OU~~<br>~~GOO~~|mA<br>~~(~~<br>~~(OO~~|I/O toVSS<br>~~(~~<br>~~(OO~~|
|Reverse ClampingVoltage(Note 6)<br>~~GOO~~<br>~~PO~~<br>~~reeaeeee~~|VC<br>~~GOO~~<br>~~reeaeeee~~|—<br>~~GOO~~|3<br>~~GOO~~|—<br>~~GOO ~~|V<br> ~~(OO~~|IPP=3A,I/O toVSS, 8/20µs<br>~~(OO~~|
|ClampingVoltage(Note 7)<br>~~PO~~<br>~~reeaeeee~~<br>~~Pe~~<br>~~PO~~<br>~~reeaeeee~~|VC<br>~~reeaeeee~~<br>~~Pe~~<br>~~reeaeeee~~|—<br>~~Pe~~|6<br>~~Pe~~|—<br>~~Pe~~|V<br>~~Pe~~|TLP,16A, tp= 100ns,I/O toVSS<br>~~Pe~~|
|ClampingVoltage(Note 7)<br>~~PO~~<br>~~reeaeeee~~|VC<br>~~reeaeeee~~|—|4.5|—|V|TLP,-16A,tp= 100ns,I/O to VSS|
|Dynamic Reverse Resistance<br>~~PO~~<br>~~reeaeeee~~<br>~~Pea~~|RDIF-R<br>~~reeaeeee~~<br>~~Pea~~|—<br>~~Pea~~|0.25<br>~~Pea~~|—<br>~~Pea~~|Ω<br>~~Pea~~|TLP,10A, tp= 100ns,I/O toVSS<br>~~Pea~~|
|Dynamic Forward Resistance<br>~~Pe~~|RDIF-F<br>~~Pe~~|—<br>~~Pe~~|0.2<br>~~Pe~~|—<br>~~Pe~~|Ω<br>~~Pe~~|TLP,10A, tp= 100ns,VSStoI/O<br>~~Pe~~|
|Channel Input Capacitance<br>~~Pe~~|CI/O<br>~~Pe~~|—<br>~~Pe~~|0.45<br>~~Pe~~|—<br>~~Pe~~|pF<br>~~Pe~~|VI/O= 0V,VSS= 0V,f = 1MHz<br>~~Pe~~|



Notes:         5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes Incorporated’s suggested pad layout, which can be found on our website at http://www.diodes.com/package-outlines.html. 

6. Clamping voltage value is based on an 8x20µs peak pulse current (IPP) waveform. 

7. Clamping voltage value is based on an TLP model. TLP conditions: Z0=50Ω, tp = 100ns, averaging window; t1=70ns to t2=90ns. 

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D5V0FS4U10LP Document number: DS39520  Rev. 1 – 2 

September 2017 © Diodes Incorporated 

**D5V0FS4U10LP** 

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100<br>E N<br>75 t tf}Nft<br>TIN| fF AL| tt|ff<br>50 | | EN | | dt<br>25<br>ERaeNeEee<br>ft tt | KL<br>0 ft ft ft } IN<br>0 25 50 75 100 125 150 175 200<br>TA, AMBIENT TEMPERATURE (°C)<br>Figure 1. Pulse Derating Curve<br>16<br>14  EEE YE<br>TELLTALE<br>12  LL<br>10  -EEEVE<br>LL<br>8  EPEAT L EE EE<br>6<br>EYEty Ty<br>4  TEAL LLL<br>2 0  YEE“TALLEE TTT<br>0  1  2  3  4  5  6  7  8  9  10 11<br>VOLTAGE FROM I/O TO VSS (V)<br>Figure 3. Current  vs. Voltage<br>PEAK POWER OR CURRENT<br>PEAK PULSE DERATING IN % OF<br> (A)<br>SS<br>CURRENT FROM  I/O TO V<br>**----- End of picture text -----**<br>


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0.8<br>I/O to VSS<br>f=1MHz<br>0.6<br>0.4<br>0.2<br>0.0<br>0.0  1.0  2.0  3.0  4.0  5.0<br>VI/0, INPUT VOLTAGE (V)<br>Figure 2. Input Capacitance vs. Input Voltage<br>,INPUT CAPACITANCE (pF)<br>I/O<br>C<br>**----- End of picture text -----**<br>


3 of 5 **www.diodes.com** 

D5V0FS4U10LP Document number: DS39520  Rev. 1 – 2 

September 2017 © Diodes Incorporated 

**D5V0FS4U10LP** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

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U-DFN2510-10<br>A3<br>A1<br>A<br>U-DFN2510-10<br>Seating Plane Dim  Min  Max  Typ<br>A  0.545 0.605 0.575<br>A1  0.00 0.05 0.03<br>D<br>A3  -  -  0.13<br>b1 b 0.15 0.25 0.20<br>b1  0.35 0.45 0.40<br>D  2.450 2.575 2.500<br>e  -  -  0.50<br>E  0.950 1.075 1.000<br>E L  0.325 0.425 0.375<br>z  -  -  0.150<br>L All Dimensions in mm<br>z b<br>e<br>a<br>Suggested Pad Layout<br>  Please see http://www.diodes.com/package-outlines.html for the latest version.<br>U-DFN2510-10<br>X2<br>X1 X<br>Value<br>Dimensions<br>(in mm)<br>Y1 Y C  0.500<br>X  0.250<br>X1  0.450<br>Y3<br>X2  2.250<br>Y  0.625<br>Y2 Y1  0.575<br>Y2  0.700<br>Y3  1.400<br>ia C<br>D5V0FS4U10LP  4 of 5<br>Document number: DS39520  Rev. 1 – 2 www.diodes.com<br>R0.075<br>R0.125<br>**----- End of picture text -----**<br>


September 2017 © Diodes Incorporated 

**D5V0FS4U10LP** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2017, Diodes Incorporated 

**www.diodes.com** 

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D5V0FS4U10LP Document number: DS39520  Rev. 1 – 2 

September 2017 © Diodes Incorporated