D5V0F3B6LP20-7

**D5V0F3B6LP20** 

**USB2.0 and VBUS TVS DIODE ARRAY** 

## **Product Summary** 

|**VBR(min)**|**IPP(max)**|**IR (max)**|
|---|---|---|
|28V& 6V|9.5A& 3.5A|50nA|



## **Description** 

This new generation TVS is designed to protect sensitive electronics from the damage due to ESD. The combination of small size and high ESD surge capability makes it ideal for use in portable applications such as cellular phones, digital cameras, and MP3 players. 

## **Applications** 

## **Features** 

- Low Profile Package (0.605mm max) and Ultra-small PCB Footprint Area (2.05 * 2.05mm max) Suitable for Compact Portable Electronics 

- 3 Bi-directional Channels and 1 VBUS of ESD protection 

- Typically Used at High Speed Ports such as USB 2.0 OTG 

- Low Channel Input Capacitance of 0.4pF Typical for I/Os 

- High Surge Ipp up to 9.5A(10x1000 μs) for VBUS 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

## **Mechanical Data** 

- Cellular Handsets 

- Portable Electronics 

- Computers and Peripheral 

- Case: U-DFN2020-6 

- Case Material: Molded Plastic, “Green” Molding Compound; UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminals: NiPdAu over Copper Leadframe; Solderable per MILSTD-202, Method 208 oO **e4** 

- Weight: 0.0065 grams (Approximate) 

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DFN2020-6<br>Pin # Description  Pin 1 Mark USBID D+ _ D- VBUS<br>41, ,5, 2 6 VBI/OsUS VBUS te---— {6 D+ i Aa sae<br>3 Ground VBUS D-<br>Center Tab Ground i i<br>GND USBID<br>GND<br>Pin Description<br>Top View   Schematic<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 4) 

|**Product**|**Compliance**|**Marking**|**Reel Size(inches)**|**Tape Width(mm)**|**Quantity per Reel**|
|---|---|---|---|---|---|
|D5V0F3B6LP20-7|Standard|UV5|7|12|3,000/Tape & Reel|



Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html. 

## **Marking Information** 

## DFN2020-6 

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UV5<br>**----- End of picture text -----**<br>


UV5 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: B = 2014) M = Month (ex: 9 = September) 

1 of 5 **www.diodes.com** 

D5V0F3B6LP20 Document number: DS37603 Rev. 1 - 2 

April 2015 © Diodes Incorporated 

**D5V0F3B6LP20** 

**Maximum Ratings - VBUS** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratings - VBUSgs - VBUSs - VBUS** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratings - VBUSgs - VBUSs - VBUS** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratings - VBUSgs - VBUSs - VBUS** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratings - VBUSgs - VBUSs - VBUS** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratings - VBUSgs - VBUSs - VBUS** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|
||||||
|**Characteristic**|**Symbol**|**Value**|**Unit**|**Conditions**|
|Peak Pulse Current, VBUS Pin|IPP1|9.5|A|10/1000µs|
|ESD Protection – Contact Discharge, VBUS Pin|VESD_Contact|±30|kV|Standard IEC 61000-4-2|
|ESD Protection – Air Discharge, VBUS Pin|VESD_Air|±30|kV|Standard IEC 61000-4-2|



**Maximum Ratings – I/Os** (@TA = +25°C, unless otherwise specified.) 

|**Maximum Ratings – I/Osgs – I/Oss – I/Os** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratings – I/Osgs – I/Oss – I/Os** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratings – I/Osgs – I/Oss – I/Os** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratings – I/Osgs – I/Oss – I/Os** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratings – I/Osgs – I/Oss – I/Os** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|
||||||
|**Characteristic**|**Symbol**|**Value**|**Unit**|**Conditions**|
|Peak Pulse Current, I/O Pins|IPP|3.5|A|8/20µs|
|ESD Protection – Contact Discharge, I/O Pins|VESD_Contact|±8|kV|Standard IEC 61000-4-2|
|ESD Protection – Air Discharge, I/O Pins|VESD_Air|±15|kV|Standard IEC 61000-4-2|



## **Thermal Characteristics** 

|**Characteristic**|**Symbol**|**Value**|**Unit**|
|---|---|---|---|
|Power Dissipation (Note 5)|PD|500|mW|
|Thermal Resistance, Junction to Ambient (Note 5)|RJA|250|°C/W|
|Operating and Storage Temperature Range|TJ, TSTG|-65 to +150|°C|



**Electrical Characteristics - VBUS** (@TA = +25°C, unless otherwise specified.) 

|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Conditions**|
|---|---|---|---|---|---|---|
|Reverse Standoff Voltage|VRWM|—|—|26|V|—|
|Channel Leakage Current(Note 6)|IRM|—|—|50|nA|VRWM= 26V|
|Forward Voltage|VF|0.6|0.8|1.2|V|IR= 10mA|
|ClampingVoltage|VCL|—|—|40|V|IPP= 9.5A,tp= 10/1000μS|
|Breakdown Voltage|VBR|28|—|31.9|V|IR= 1mA|
|Channel Input Capacitance|CT|—|630|—|pF|VR= 0V,f = 1MHz|



**Electrical Characteristics – I/Os** (@TA = +25°C unless otherwise specified) 

|~~|}_}__}__|-_}#_____J~~|~~|}_}__}__|-_}#_____J~~|~~|}_}__}__|-_}#_____J~~|~~|}_}__}__|-_}#_____J~~|~~|}_}__}__|-_}#_____J~~|~~|}_}__}__|-_}#_____J~~|~~|}_}__}__|-_}#_____J~~|
|---|---|---|---|---|---|---|
|**Characteristic**<br>~~[-____}~~|**Symbol**<br>~~[-____}~~<br>~~|}~~|**Min**<br>~~[-____}~~<br>~~|}_}__}__|-_}#_____J~~|**Typ**<br>~~[-____}~~<br>~~_}__}__|-_}#_____J~~|**Max**<br>~~[-____}~~<br>~~_}__}__|-_}#_____J~~|**Unit**<br>~~[-____}~~<br>~~_}__}__|-_}#_____J~~|**Test Conditions**<br>~~[-____}~~<br>~~_}__}__|-_}#_____J~~|
|Reverse WorkingVoltage<br>~~[-____}~~|VRWM<br>~~[-____}~~<br>~~|}~~<br>~~|}~~|—<br>~~[-____}~~<br>~~|}_}__}__|-_}#_____J~~<br>~~|}+}~~|—<br>~~[-____}~~<br>~~_}__}__|-_}#_____J~~<br>~~+}~~|5.5<br>~~[-____}~~<br>~~_}__}__|-_}#_____J~~<br>~~+}~~<br>~~|}~~|V<br>~~[-____}~~<br>~~_}__}__|-_}#_____J~~<br>~~|}_}#_____J~~|—<br>~~[-____}~~<br>~~_}__}__|-_}#_____J~~<br>~~_}#_____J~~|
|Reverse Current (Note 6)<br>~~[$+~~|IR<br>~~|}~~<br>~~[$+~~<br>~~|}~~|—<br>~~|} _}__}__|-_}#_____J~~<br>~~[$+~~<br>~~|}+}~~|—<br>~~_}__}__|-_}#_____J~~<br>~~[$+~~<br>~~+}~~|50<br>~~_}__}__|-_}#_____J~~<br>~~[$+~~<br>~~+}~~<br>~~|}~~|nA<br>~~_}__}__|-_}#_____J~~<br>~~[$+~~<br>~~|}_}#_____J~~|VR= 5.5V<br>~~_}__}__|-_}#_____J~~<br>~~[$+~~<br>~~_}#_____J~~|
|Reverse Breakdown Voltage<br>~~[$+~~|VBR<br>~~[$+~~<br>~~|}~~<br>~~ee~~|6.0<br>~~[$+~~<br>~~|}+}~~<br>~~es es~~|—<br>~~[$+~~<br>~~+}~~<br>~~es~~|9.95<br>~~[$+~~<br>~~+}~~<br>~~|}~~<br>~~es~~|V<br>~~[$+~~<br>~~|}_}#_____J~~<br>~~es~~|IR= 1mA<br>~~[$+~~<br>~~_}#_____J~~|
|Reverse Clamping Voltage, Positive Transients<br>(Note 7)<br>~~ee~~|VCL<br>~~|}~~<br>~~ee~~<br>~~ee~~<br>~~_}-~~|—<br>~~|} +}~~<br>~~ee~~<br>~~es es~~<br>~~_}-+}~~|12<br>~~+}~~<br>~~ee~~<br>~~es~~<br>~~+}~~|14<br>~~+}~~<br>~~|}~~<br>~~ee~~<br>~~es~~<br>~~+}_}}~~|V<br>~~|} _}#_____J~~<br>~~ee~~<br>~~es~~<br>~~_}}—_}+#__________]~~|IPP= 1A, tp= 8/20μs<br>~~_}#_____J~~<br>~~ee~~<br>~~—_}+#__________]~~|
|Dynamic Resistance<br>~~-___}-~~|RDYN<br>~~ee ~~<br>~~-___}-~~<br>~~_}-~~|—<br> ~~es es~~<br>~~-___}-~~<br>~~_}-+}~~|1.0<br>~~es~~<br>~~-___}-~~<br>~~+}~~|—<br>~~es ~~<br>~~-___}-~~<br>~~+}_}}~~|Ω<br> ~~es~~<br>~~-___}-~~<br>~~_}}—_}+#__________]~~|IR= 1A, tp= 8/20μs<br>~~-___}-~~<br>~~—_}+#__________]~~|
|Capacitance (Note 8)<br>~~-___}-~~|CT<br>~~-___}-~~<br>~~_}-~~|—<br>~~-___}-~~<br>~~_}-+}~~|0.4<br>~~-___}-~~<br>~~+}~~|0.5<br>~~-___}-~~<br>~~+}_}}~~|pF<br>~~-___}-~~<br>~~_}}—_}+#__________]~~|VR= 0V, f = 1MHz, VBUS = 26V<br>~~-___}-~~<br>~~—_}+#__________]~~|



6. Short duration pulse test used to minimize self-heating effect. 

7. Clamping voltage value is based on an 8x20µs peak pulse current (Ipp) waveform. 

8. Measured from any I/O to GND. 

9. For information on the impact of Diodes' USB 2.0 compatible ESD protectors on signal integrity including eye diagram plots, please refer to AN77 at the following URL: http://www.diodes.com/destools/appnote_dnote.html. 

2 of 5 **www.diodes.com** 

D5V0F3B6LP20 Document number: DS37603 Rev. 1 - 2 

April 2015 © Diodes Incorporated 

**D5V0F3B6LP20** 

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700<br>Note 5<br>600<br>. Peak Value Ipp ye SeReeeeeee<br>500<br>" IN EERE<br>Half Value Ipp/2 400 SINGLE<br>300<br>HPN<br>+N 200 ET TL<br>100<br>t p 10 X 1000 Waveform<br>as defined by R.E.A.<br>passe 0 [HES] \<br>0 1 2 3 0 LETTE 40 80 120 INET 160 200<br>t, TIME (ms) TA, AMBIENT TEMPERATURE (°C)<br>Figure 1 Pulse Waveform Figure 2  Power Derating Curve<br>100 700<br>“ALLELLLEI] 650 fp<br>600<br>75<br>550<br>CAS Ee<br>SENG 500 ee<br>450<br>50 PORTE) ee eee<br>400 FEE<br>SIN t<br>350<br>25 300<br>SENS epee<br>250<br>coo eee eee<br>200<br>0<br>150<br>0 ELE 25 50 75 100 EIN 125 150 175 |) 200 SEEPepe pp<br>0 5 10 15 20 25<br>Figure 3 Power Dissipation vs. Ambient TemperatureTA, AMBIENT TEMPERATURE (°C) VR, DC REVERSE VOLTAGE (V)<br>Figure 4 Typical Total Capacitance, VBUS Figure 4 Typical Total Capacitance<br>10000 1<br>1000<br>0.8<br>100 TA = 150°C<br>10 T A  = 125°C 0.6<br>TA = 85°C<br>1<br>0.4<br>TA = 25°C<br>0.1<br>TA = -55°C<br>0.2<br>0.01<br>0.001 0<br>100 200 300 400 500 600 700 800 900 1000 0 HH 1 2 3 4 5 6<br>VF, INSTANTANEOUS FORWARD VOLTAGE (V) VR, DC REVERSE VOLTAGE (V)<br>Figure 5 Typical Forward Characteris ics, VBUS Figure 5 Typical Forward Charac t eristics<br>Figure 6 Typical Total Capacitance, I/Os<br>, TOTAL CAPACITANCE (pF)<br>T<br>C<br>)<br>, PEAK PULSE CURRENT (%I<br>I<br>pp<br>P<br>P<br>, INSTANTANEOUS FORWARD CURRENT (mA)<br>IF<br>PEAK PULSE DERATING % OF PEAK POWER OR CURRENT<br>, POWER DISSIPATION (mW)<br>P<br>D<br>, TOTAL CAPACITANCE (pF)<br>T<br>C<br>**----- End of picture text -----**<br>


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D5V0F3B6LP20 Document number: DS37603 Rev. 1 - 2 

April 2015 © Diodes Incorporated 

**D5V0F3B6LP20** 

## **Package Outline Dimensions** 

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. 

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U-DFN2020-6<br>(TYPE C)<br>Dim  Min  Max  Typ<br>A  0.57  0.63 0.60<br>A1  0.00 0.05 0.02<br>A3 ––  ––  0.15<br>b  0.25 0.35 0.30<br>D  1.95  2.075  2.00<br>D2  1.55 1.75 1.65<br>E  1.95 2.075 2.00<br>==i E2  0.86 1.06 0.96<br>e ––  ––  0.65<br>L  0.25  0.35  0.30<br>Z  ––  ––  0.20<br>All Dimensions in mm<br>——<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. 

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X2<br>X1 Dimensions  Value<br>(in mm)<br>C  0.650<br>Y X  0.350<br>X1  1.650<br>X2  1.700<br>Y  0.525<br>fC oO Y1  1.010<br>Y2 Y1 Y2  2.400<br>i |<br>fod<br>X C<br>tf Le Eo<br>**----- End of picture text -----**<br>


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D5V0F3B6LP20 Document number: DS37603 Rev. 1 - 2 

April 2015 © Diodes Incorporated 

**D5V0F3B6LP20** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others.  Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending.  Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference.  Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

- B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2015, Diodes Incorporated 

**www.diodes.com** 

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D5V0F3B6LP20 Document number: DS37603 Rev. 1 - 2 

April 2015 © Diodes Incorporated