D58V0M4U8MR-13

**D58V0M4U8MR** 

**58V UNIDIRECTIONAL TVS DIODE ARRAY** 

## **Features** 

## **Mechanical Data** 

- 2.7kW Peak Pulse Power (tp = 8x20µs) 

- Provides ESD Protection per IEC 61000-4-2 Standard: Air ± 30kV, Contact ± 30kV 

- 4 Channels of ESD Protection and 4 Decoupling Capacitances 

- Typically Used in Power Over Ethernet PSE Equipment against Line Overvoltages 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

   - Case: SO-8 

   - Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

   - Moisture Sensitivity: Level 1 per J-STD-020 

   - Terminals: Matte Tin Finish annealed over Copper leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 

   - Weight: 0.08 grams (approximate) 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

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SO-8<br>; Gnd PSs1 Ps2 PS3<br>~~ PS1 [1 | 8 | PS4 2367 1 4 8<br>GND GND<br>b GND 5 GND<br>4 PS2 PS3 Lee eee eee eee eee eee<br>Top View  Top View  Device Schematic<br>Pin Configuration<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 4) 

## **D58V0 M X B X XXX- XX** 

Voltage Capacitance # of Channels Polarity # of Pins Package Packing 5V0: 5.0 Volts X: Extremely Low (<0.5pF) 1: 1 Channel B: Bidirectional 2: 2 Pins LP3: X3-DFN0603-2 7: 7” reel 58V0: 58.0 Volts F: Ultra Low (0.5 ~ 1.0pF) 2: 2 Channels (Symmetrical) 3: 3 Pins LP: X1-DFN1006-2 7B: 7” reel (DFN1006 P: Very Low (1.1 ~ 10pF) 4: 4 Channels U: Unidirectional 5: 5 Pins LP4: X2-DFN1006-2 Package Only) L: Low (10.1 ~ 20pF) 6: 6 Channels A: Bidirectional 6: 6 Pins WS: SOD323 13: 13” reel M: Medium (>20pF) (Asymmetrical) 8: 8 Pins T: SOD523/SOT523 10: 10 Pins SO: SOT23/SOT25 W: SOD123/SOT323 TS: TSOT25/TSOT26 S: SOT353/SOT363 V:SOT553/SOT563 

|**Product**|**Compliance**|**Marking**|**Reel size(inches)**|**Tape width(mm)**|**Quantity per reel**|
|---|---|---|---|---|---|
|D58V0M4U8MR-13|Standard|TV58|13|12|2500/Tape & Reel|



- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 

   2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. 

## **Marking Information** 

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Top View<br>ae 8 5<br>Logo<br>TV58 Part Marking<br>YY WW Xth week: 01 ~ 53<br>Year: “13” = 2013<br>PP 1 LJ LU 4<br>**----- End of picture text -----**<br>


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D58V0M4U8MR Document number: DS36183  Rev. 2 - 2 

April 2014 © Diodes Incorporated 

**D58V0M4U8MR** 

**Maximum Ratings** (@TA = +25°C, unless otherwise specified.), Per Element 

|**Maximum Ratingsgss**(@TA = +25°C, unless otherwise specified.), Per ElementA = +25°C, unless otherwise specified.), Per Element= +25°C, unless otherwise specified.), Per Element|**Maximum Ratingsgss**(@TA = +25°C, unless otherwise specified.), Per ElementA = +25°C, unless otherwise specified.), Per Element= +25°C, unless otherwise specified.), Per Element|**Maximum Ratingsgss**(@TA = +25°C, unless otherwise specified.), Per ElementA = +25°C, unless otherwise specified.), Per Element= +25°C, unless otherwise specified.), Per Element|**Maximum Ratingsgss**(@TA = +25°C, unless otherwise specified.), Per ElementA = +25°C, unless otherwise specified.), Per Element= +25°C, unless otherwise specified.), Per Element|**Maximum Ratingsgss**(@TA = +25°C, unless otherwise specified.), Per ElementA = +25°C, unless otherwise specified.), Per Element= +25°C, unless otherwise specified.), Per Element|
|---|---|---|---|---|
||||||
|**Characteristic**|**Symbol**|**Value**|**Unit**|**Conditions**|
|Peak Pulse Power Dissipation|PPP|2700|W|8/20µs, Per Figure 1|
|Peak Pulse Current|IPP|24|A|8/20µs, Per Figure 1|
|ESD Protection – Contact Discharge|VESD_Contact|±30|kV|IEC 61000-4-2 Standard|
|ESD Protection – Air Discharge|VESD_Air|±30|kV|IEC 61000-4-2 Standard|



## **Thermal Characteristics** 

|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|
|---|---|---|---|
|||||
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Package Power Dissipation (Note 5)|PD|1.0|W|
|Thermal Resistance, Junction to Ambient (Note 5)|RθJA|125|°C/W|
|Operating and Storage Temperature Range|TJ, TSTG|-65 to +150|°C|



**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Conditions**|
|Reverse Standoff Voltage|VRWM|—|—|58|V|—|
|Channel Leakage Current (Note 6)|IRM|—|—|0.2|μA|VRWM= 58V|
|Breakdown Voltage|VBR|64.4|—|71.2|V|IR= 1mA|
|Clamping Voltage|VCL|—|—|100|V|IPP= 24A, tp= 8/20μS|
|Channel Input Capacitance|CT|—|55|—|pF|VR= 50V, f = 1MHz|



Notes: 5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at http://www.diodes.com. 

6. Short duration pulse test used to minimize self-heating effect. 

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110<br>100<br>9080 Pot INE<br>Et) 70 SeGe RSeEEEL<br>60<br>50<br>40<br>| P P ES<br>30<br>20 See<br>10<br>0 ee<br>60 0 25 50 75 100 125 150 175<br>TJ (°C)<br>Figure 2 Peak Power Dissipation vs.<br>Initial Junction Temperature<br>°C)<br> INITIAL = 25<br>(TJ<br>PP<br>P<br> INITIAL)/ J<br>(T<br>PP<br>P<br>**----- End of picture text -----**<br>


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100 Peak Value Ipp<br>\<br>PAE sa e Et)<br>Half Value Ipp/2<br>50 HN<br>| P<br>PEN<br>8x20 Waveform<br>as defined by R.E.A.<br>0 2<br>0 20 40 60<br>t, TIME (s)<br>Figure 1 Pulse Waveform<br>)pp<br>, PEAK PULSE CURRENT (%I<br>P<br>IP<br>**----- End of picture text -----**<br>


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D58V0M4U8MR Document number: DS36183  Rev. 2 - 2 

April 2014 © Diodes Incorporated 

**D58V0M4U8MR** ~~a~~ 

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'n CO R PORATED<br>DaCDES<br>**----- End of picture text -----**<br>


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100.0<br>T J  Initial = 25°C<br>ee i a<br>| HT<br>a a |<br>10.0<br>AIIM“NFUT E T I<br>PENSE<br>PTa  TING EE EE<br>PTNO TINE < EE<br>NIORTAI<br>1.0 IIIOnnEEETINn<br>CCITT<br>PL<br>0.1 TIE PEI EERIE TTI ye TT SN<br>1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01<br>tp (mS)<br> (kW)<br>PP<br>P<br>**----- End of picture text -----**<br>


Figure 3 Peak Pulse Power vs. Exponential Pulse Duration (TJ Initial = 25°C) 

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1000 ne<br>f = 1MHz Po<br>VOSC = 30mVRMS DL<br>T J  = 25°C LT<br>2<br>><br>100 ee<br>a a<br>———O—————sees<br>Po<br>es<br>ee ee eee<br>10<br>40 45 50 55<br>VR (V)<br> (pF)<br>T<br>C<br>**----- End of picture text -----**<br>


Figure 5 Capacitance vs. Voltage (typical values) 

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1 Twn oro<br>LEE HT FHT et<br>Cen Cr eC<br>Loo Co Co ee<br>IE ATT<br>a ah a An<br>EMMETT TT<br>WI<br>0.1<br>SS TT et<br>LEHI ETT CEC<br>CMC<br>a |<br>EEA EMU EAI TI ET | TI<br>ee a A<br>0.01 /|<br>1.0E-03 1.0E-01 1.0E+01 1.0E+03<br>tP (s)<br>Figure 7 Relative Variation of Thermal Impedance<br>Junction Ambient vs. Pulse Duration<br>Zth(j-a)/ Rth(j-a)<br>**----- End of picture text -----**<br>


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100.0<br>e ee ee<br>e ee<br>EE ee<br>10.0 ery<br>tt |<br>| A SS SS OO SSSS<br>PotFEA Pt<br>f(| | f_fF [|[| [|| [|| J| fT[| ft| fTft ftft fttyft ft yf<br>Li[7AE tT | | te ET tT  Tt | tT<br>1.0 iESSSSS EE EE<br>eee(it | | yy yy TJ Initial = 25°C |_|<br>8/20µs<br>0.1 yet HELtT eeTETye ey EET |_||<br>70 80 90 100<br>VCL (V)<br> (A)<br>IPP<br>**----- End of picture text -----**<br>


Figure 4 Clamping Voltage vs. Peak Pulse Current (Exponential Waveform, Maximum Values) 

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1.0E+01 _————<br>ee Coo|<br>a<br>eG > AD<br>a es A |<br>1.0E+00 a Ae<br>ee ee<br>aa CGaGSGC<br>es<br>a ee eeee<br>1.0E-01 || {fi tT lh<br>—— a<br>QC<br>-—-——a DG|<br>T J  = 25°C<br>TJ = 125°C<br>1.0E-02<br>0 0.5 1 1.5<br>VFM (V)<br>Figure 6 Peak Forward Voltage Drop vs.<br>Peak Forward Current (typical values)<br> (A)<br>IFM<br>**----- End of picture text -----**<br>


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1.E+04 eee<br>——— VR = VRWM<br>=_- ><br>= S=SSSSSS<br>1.E+03 _———<br>= SS<br>1.E+02 a<br>—————————————<br>1.E+01<br>Sees<br>———_——_—_——_—<br>1.E+00 _LO<br>——————————<br>1.E-01 a a a<br>1.E-02 L a [| | GG [| {| [T GG {| JT | T |<br>25 50 75 100 125 150<br>TJ (°C)<br> (nA)<br>IR<br>**----- End of picture text -----**<br>


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Figure 8 Leakage Current vs. Junction Temperature<br>(typical values)<br>**----- End of picture text -----**<br>


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D58V0M4U8MR 

April 2014 © Diodes Incorporated 

Document number: DS36183  Rev. 2 - 2 

**D58V0M4U8MR** 

## **Package Outline Dimensions** 

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. 

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SO-8<br>Dim  Min  Max<br>A  -  1.75<br>E1 E A1  0.10  0.20<br>A1 Gauge PlaneSeating Plane A2  1.30  1.50<br>L A3  0.15  0.25<br>b  0.3  0.5<br>Detail ‘A’ D  4.85  4.95<br>E  5.90  6.10<br>h 7°~9° E1  3.85  3.95<br>45° e  1.27 Typ<br>Detail ‘A’ h  -  0.35<br>A2 A A3 L  0.62  0.82<br> 0 8<br>e b All Dimensions in mm<br>D<br>yout out<br>Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.<br>X<br>Dimensions Value (in mm)<br>X  0.60<br>"Tao ‘i Y  1.55<br>C1<br>C1  5.4<br>C2  1.27<br>C2<br>Y<br>2 OG<br>tf ! + |<br>0.254<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout out** 

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. 

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D58V0M4U8MR Document number: DS36183  Rev. 2 - 2 

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**D58V0M4U8MR** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others.  Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending.  Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference.  Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2014, Diodes Incorporated 

**www.diodes.com** 

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D58V0M4U8MR Document number: DS36183  Rev. 2 - 2 

April 2014 © Diodes Incorporated