D45H11G

**DATA SHEET www.onsemi.com** 

## Complementary Silicon Power Transistors 

## D44H Series (NPN), D45H�Series (PNP) 

These series of plastic, silicon NPN and PNP power transistors can be used as general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers. 

## **Features** 

## **10 AMP COMPLEMENTARY SILICON POWER TRANSISTORS 60, 80 VOLTS** 

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PNP NPN<br>COLLECTOR 2, 4 COLLECTOR 2, 4<br>1 1<br>BASE BASE<br>EMITTER 3 EMITTER 3<br>**----- End of picture text -----**<br>


- Low Collector−Emitter Saturation Voltage 

- Fast Switching Speeds 

- Complementary Pairs Simplifies Designs 

- These Devices are Pb−Free and are RoHS Compliant* 

## **MAXIMUM RATINGS** 

|**MAXIMUM RATINGS**||||
|---|---|---|---|
|**Rating**|**Symbol**|**Value**|**Unit**|
|Collector−Emitter Voltage<br>D44H8, D45H8<br>D44H11, D45H11|VCEO|60<br>80|Vdc|
|Emitter Base Voltage|VEB|5.0|Vdc|
|Collector Current − Continuous|IC|10|Adc|
|Collector Current − Peak (Note 1)|ICM|20|Adc|
|Total Power Dissipation<br>@ TC= 25°C<br>@ TA= 25°C|PD|70<br>2.0|W|
|Operating and Storage Junction<br>Temperature Range|TJ, Tstg|−55 to +150|°C|



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Pulse Width ≤ 6.0 ms, Duty Cycle ≤ 50%. 

## **THERMAL CHARACTERISTICS** 

|**THERMAL CHARACTERISTICS**||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Max**|**Unit**|
|Thermal Resistance, Junction−to−Case|R�JC|1.8|°C/W|
|Thermal Resistance, Junction−to−Ambient|R�JA|62.5|°C/W|
|Maximum Lead Temperature for Soldering<br>Purposes: 1/8″from Case for 5 Seconds|TL|275|°C|



## **MARKING DIAGRAM** 

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4<br>DIAGRAM<br>TO−220 D4xHyyG<br>CASE 221A AYWW<br>STYLE 1<br>1<br>2<br>3<br>D4xHyy = Device Code<br>x = 4 or 5<br>yy = 8 or 11<br>A = Assembly Location<br>Y = Year<br>WW = Work Week<br>G = Pb−Free Package<br>**----- End of picture text -----**<br>


## **ORDERING INFORMATION** 

|**Device**|**Package**|**Shipping**|
|---|---|---|
|D44H8G|TO−220<br>(Pb−Free)|50 Units/Rail|
|D44H11G|TO−220<br>(Pb−Free)|50 Units/Rail|
|D45H8G|TO−220<br>(Pb−Free)|50 Units/Rail|
|D45H11G|TO−220<br>(Pb−Free)|50 Units/Rail|



> *For additional information on our Pb−Free strategy and soldering details, please download the **onsemi** Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

Publication Order Number: 

**1** 

© Semiconductor Components Industries, LLC, 2014 **August, 2021 − Rev. 14** 

**D44H/D** 

## **D44H Series (NPN), D45H Series (PNP)** 

## **ELECTRICAL CHARACTERISTICS** (TC = 25 ° C unless otherwise noted) 

|**ELECTRICAL CHARACTERISTICS**(TC= 25°C unless otherwise not|ed)|||||
|---|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**||||||
|Collector−Emitter Sustaining Voltage<br>D44H8, D45H8<br>(IC= 30 mAdc, IB= 0 Adc)<br>D44H11, D45H11|VCEO(sus)|60<br>80|−<br>−|−<br>−|Vdc|
|Collector Cutoff Current (VCE= Rated VCEO, VBE= 0)|ICES|−|−|10|�A|
|Emitter Cutoff Current (VEB= 5.0 Vdc)|IEBO|−|−|10|�A|
|**ON CHARACTERISTICS**||||||
|DC Current Gain<br>(VCE= 1.0 Vdc, IC= 2.0 Adc)<br>(VCE= 1.0 Vdc, IC= 4.0 Adc)|hFE|60<br>40|−<br>−|−<br>−|−|
|Collector−Emitter Saturation Voltage<br>(IC= 8.0 Adc, IB= 0.4 Adc)|VCE(sat)|−|−|1.0|Vdc|
|Base−Emitter Saturation Voltage<br>(IC= 8.0 Adc, IB= 0.8 Adc)|VBE(sat)|−|−|1.5|Vdc|
|**DYNAMIC CHARACTERISTICS**||||||
|Collector Capacitance<br>(VCB= 10 Vdc, ftest= 1.0 MHz)<br>D44H Series<br>D45H Series|Ccb|−<br>−|90<br>160|−<br>−|pF|
|Gain Bandwidth Product<br>(IC= 0.5 Adc, VCE= 10 Vdc, f = 20 MHz)<br>D44H Series<br>D45H Series|fT|−<br>−|50<br>40|−<br>−|MHz|
|**SWITCHING TIMES**||||||
|Delay and Rise Times<br>(IC= 5.0 Adc, IB1= 0.5 Adc)<br>D44H Series<br>D45H Series|td+ tr|−<br>−|300<br>135|−<br>−|ns|
|Storage Time<br>(IC= 5.0 Adc, IB1= IB2= 0.5 Adc)<br>D44H Series<br>D45H Series|ts|−<br>−|500<br>500|−<br>−|ns|
|Fall Time<br>(IC= 5.0 Adc, IB1= 102 = 0.5 Adc)<br>D44H Series<br>D45H Series|tf|−<br>−|140<br>100|−<br>−|ns|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

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**2** 

**D44H Series (NPN), D45H Series (PNP)** 

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1000<br>VCE = 1 V<br>25 ° C<br>125 ° C<br>−40 ° C<br>100<br>10<br>0.01 0.1 1 10<br>IC, COLLECTOR CURRENT (AMPS)<br>, DC CURRENT GAIN<br>FE<br>h<br>**----- End of picture text -----**<br>


**Figure 1. D44H11 DC Current Gain** 

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1000<br>VCE = 1 V<br>125 ° C<br>25 ° C<br>100 −40 ° C<br>10<br>0.01 0.1 1 10<br>IC, COLLECTOR CURRENT (AMPS)<br>, DC CURRENT GAIN<br>FE<br>h<br>**----- End of picture text -----**<br>


**Figure 2. D45H11 DC Current Gain** 

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1000 1000<br>VCE = 5 V VCE = 5 V<br>25 ° C<br>125 ° C 125 ° C<br>25 ° C<br>100 −40 ° C 100 −40 ° C<br>10 10<br>0.01 0.1 1 10 0.01 0.1 1 10<br>IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)<br>Figure 3. D44H11 DC Current Gain Figure 4. D45H11 DC Current Gain<br>0.40 0.6<br>VCE(sat) @ IC/IB = 10 VCE(sat) @ IC/IB = 10<br>0.35<br>0.5<br>0.30<br>−40 ° C 0.4<br>0.25 −40 ° C<br>0.20 0.3<br>25 ° C<br>0.15 25 ° C 125 ° C<br>0.2<br>0.10 125 ° C<br>0.1<br>0.05<br>0 0<br>0.1 1 10 0.1 1 10<br>IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)<br>, DC CURRENT GAIN , DC CURRENT GAIN<br>FE FE<br>h h<br>SATURATION VOLTAGE (VOLTS) SATURATION VOLTAGE (VOLTS)<br>**----- End of picture text -----**<br>


**Figure 5. D44H11 ON−Voltage** 

**Figure 6. D45H11 ON−Voltage** 

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**3** 

**D44H Series (NPN), D45H Series (PNP)** 

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1.2 1.4<br>VBE(sat) @ IC/IB = 10 −40 ° C 1.2 VBE(sat) @ IC/IB = 10<br>1.0<br>−40 ° C<br>1.0<br>0.8 125 ° C<br>0.8<br>125 ° C<br>0.6<br>25 ° C 0.6<br>25 ° C<br>0.4<br>0.4<br>0.2<br>0.2<br>0 0<br>0.1 1 10 0.1 1 10<br>IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)<br>Figure 7. D44H11 ON−Voltage Figure 8. D45H11 ON−Voltage<br>100 TA TC<br>50<br>30<br>20 1.0 ms 100  � s 3.0 60<br>10<br>10  � s<br>5.0<br>3.0 2.0 40<br>2.0 °<br>1.0 TDUTY CYCLE C ≤  70  C ≤  50% dc 1.0  � s T C<br>0.5 1.0 20 TA<br>0.3 D44H/45H8<br>0.2<br>D44H/45H10,11<br>0.1 0 0<br>1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 0 20 40 60 80 100 120 140 160<br>VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) T, TEMPERATURE ( ° C)<br>Figure 9. Maximum Rated Forward Bias Figure 10. Power Derating<br>Safe Operating Area<br>1.0<br>0.7<br>D = 0.5<br>0.5<br>0.3<br>0.2<br>0.2<br>0.1<br>0.1 Z�JC(t) = r(t) R�JC P(pk)<br>0.07 0.05 R�JC = 1.56°C/W MAX<br>0.05 D CURVES APPLY FOR POWER<br>0.02<br>0.03 PULSE TRAIN SHOWN t 1<br>READ TIME AT t1 t2<br>0.02 0.01 SINGLE PULSE TJ(pk) - TC = P(pk) Z�JC(t) DUTY CYCLE, D = t 1 /t 2<br>0.01<br>0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k<br>t, TIME (ms)<br>SATURATION VOLTAGE (VOLTS) SATURATION VOLTAGE (VOLTS)<br>, COLLECTOR CURRENT (AMPS) , POWER DISSIPATION (WATTS)<br>IC PD<br>r(t), TRANSIENT THERMAL<br>RESISTANCE (NORMALIZED)<br>**----- End of picture text -----**<br>


**Figure 11. Thermal Response** 

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**4** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

**TO−220** CASE 221A ISSUE AK 

DATE 13 JAN 2022 

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SCALE 1:1<br>**----- End of picture text -----**<br>


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STYLE 1: STYLE 2: STYLE 3: STYLE 4:<br>PIN 1. BASE PIN 1. BASE PIN 1. CATHODE PIN 1. MAIN TERMINAL 1<br>2. COLLECTOR 2. EMITTER 2. ANODE 2. MAIN TERMINAL 2<br>3. EMITTER 3. COLLECTOR 3. GATE 3. GATE<br>4. COLLECTOR 4. EMITTER 4. ANODE 4. MAIN TERMINAL 2<br>STYLE 5: STYLE 6: STYLE 7: STYLE 8:<br>PIN 1. GATE PIN 1. ANODE PIN 1. CATHODE PIN 1. CATHODE<br>2. DRAIN 2. CATHODE 2. ANODE 2. ANODE<br>3. SOURCE 3. ANODE 3. CATHODE 3. EXTERNAL TRIP/DELAY<br>4. DRAIN 4. CATHODE 4. ANODE 4. ANODE<br>STYLE 9: STYLE 10: STYLE 11: STYLE 12:<br>PIN 1. GATE PIN 1. GATE PIN 1. DRAIN PIN 1. MAIN TERMINAL 1<br>2. COLLECTOR 2. SOURCE 2. SOURCE 2. MAIN TERMINAL 2<br>3. EMITTER 3. DRAIN 3. GATE 3. GATE<br>4. COLLECTOR 4. SOURCE 4. SOURCE 4. NOT CONNECTED<br>**----- End of picture text -----**<br>


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Electronic versions are uncontrolled except when accessed directly from the Document Repository.<br>DOCUMENT NUMBER: 98ASB42148B Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red.<br>DESCRIPTION: TO−220 PAGE 1 OF 1<br>**----- End of picture text -----**<br>


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