D44H11TU

|**D44H11TU**<br>**NPN Epitaxial Silicon Transistor**<br>• Low Collector-Emitter Saturation Voltage : VCE(sat) = 1V (Max.) @ 8A<br>• Fast Switching Speeds<br>• Complement to KSE45H<br>**Absolute Maximum Ratings**TC=25°C unless otherwise noted<br>**Symbol**<br>**Parameter**||March 2009<br>**Value**<br>**Units**<br>1.Base    2.Collector    3.Emitter<br>1<br>TO-220<br>+|March 2009<br>**Value**<br>**Units**<br>1.Base    2.Collector    3.Emitter<br>1<br>TO-220<br>+|March 2009<br>**Value**<br>**Units**<br>1.Base    2.Collector    3.Emitter<br>1<br>TO-220<br>+|
|---|---|---|---|---|
|VCEO<br>Collector-Emitter Voltage||80||V|
|VEBO<br>Emitter-Base Voltage||5||V|
|IC<br>Collector Current (DC)||10||A|
|ICP<br>Collector-Current (Pulse)||20||A|
|PC<br>Collector Dissipation (TC=25°C)||50||W|
|Collector Dissipation (Ta=25°C)||1.67||W|
|TJ<br>Junction Temperature||150||°C|
|TSTG<br>Storage Temperature||- 55 ~ 150||°C|
|**Electrical Characteristics**TC=25°C unless otherwise noted|||||
|**Symbol**<br>**Parameter**<br>**Test Condition**<br>BVCEO<br>Collector-Emitter Breakdown Voltage IC= 10mA, IB= 0<br>BVEBO<br>Emitter-Base Breakdown Voltage<br>IE= 500μA, IC= 0<br>ICES<br>Collector Cut-off Current<br>VCE= Rated VCEO,VEB= 0<br>IEBO<br>Emitter Cut-off Current<br>VEB= 5V, IC= 0<br>hFE<br>DC Current Gain<br>VCE= 1V, IC= 2A<br>VCE(sat)<br>Collector-Emitter Saturation Voltage<br>IC= 8A, IB= 0.4A<br>VBE(sat)<br>Base-Emitter Saturation Voltage<br>IC= 8A, IB= 0.8A<br>fT<br>Current Gain Bandwidth Product<br>VCE= 10V, IC= 0.5A<br>Cob<br>Output Capacitance<br>VCB= 10V, f = 1MHz<br>tON<br>Turn On Time<br>VCC= 20V, IC= 5A<br>IB1= - IB2= 0.5A<br>tSTG<br>Storage Time<br>tF<br>Fall Time<br>~~a~~<br>~~rs eee~~<br>~~a~~<br>~~rn Ps Ss~~<br>~~a~~<br>~~ee Ps ~~<br>~~ae~~<br>~~es~~<br>~~rs~~<br>~~ae~~<br>~~ee es Gn Gs~~<br>~~a~~<br>~~es~~<br>~~es~~<br>~~ae~~<br>~~ee~~<br>~~es ee~~<br>~~a~~<br>~~rn Ps Ss~~<br>~~a~~<br>~~ee Ps ~~<br>~~ae~~<br>~~es~~<br>~~rs~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~a~~<br>~~ee~~|**Min.**<br>80<br>5<br>60<br>~~rs~~<br>~~Ss~~<br> ~~ts~~<br>~~Gn Gs~~<br>~~ee~~<br>~~ee~~<br>~~Ss~~<br> ~~ts~~<br>~~ee~~<br>~~re ~~<br>~~a~~|**Typ.**<br>**Max.**<br>**Units**<br>V<br>V<br>10<br>μA<br>100<br>μA<br>1<br>V<br>1.5<br>V<br>50<br>MHz<br>130<br>pF<br>300<br>ns<br>500<br>ns<br>140<br>ns<br>~~Gn Gs~~<br>~~ee~~<br>~~es~~<br>~~ee ee~~<br>~~ee~~<br> ~~ee ee ee~~<br>~~eeee~~|||



## **D44H11TU** 

## **NPN Epitaxial Silicon Transistor** 

- Low Collector-Emitter Saturation Voltage : VCE(sat) = 1V (Max.) @ 8A 

- Fast Switching Speeds 

- Complement to KSE45H 

## **Absolute Maximum Ratings** TC=25°C unless otherwise noted 

**Electrical Characteristics** TC=25°C unless otherwise noted 

## **NOTES:** 

- 1)  These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. 

- 2)  These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3)  These ratings are based on a maximum junction temperature of 150degrees C. 

© 2009 Fairchild Semiconductor Corporation D44H11TU Rev. B1 

www.fairchildsemi.com 

1 

## **Typical Performance Characteristics** 

**==> picture [445 x 585] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000<br>VCE = 1V IC = 10 IB<br>1<br>100 VBE(sat)<br>0.1<br>10<br>VCE(sat)<br>10.01 0.1 1 10 0.010.01 0.1 1 10<br>IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT<br>Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage<br>                 Collector-Emitter Saturation Voltage<br>1000<br>f=100MHZ<br>10<br>100<br>1<br>44H 1,244H 4,5 10010μμss<br>44H 7,8<br>44H 10,11<br>0.1<br>10 1 10 100<br>1 10 100<br>VCB[V], COLLECTOR-BASE VOLTAGE VCE[V], COLLECTOR-EMITTER VOLTAGE<br>Figure 3. Collector Output Capacitance Figure 4. Safe Operating Area<br>60<br>50<br>40<br>30<br>20<br>10<br>0<br>0 25 50 75 100 125 150 175<br>Tc[oC], CASE TEMPERATURE<br>DC1ms<br>1μs<br>(sat)[V], SATURATION VOLTAGE<br>, DC CURRENT GAIN CE<br>FE<br>h<br>(sat), V<br>BE<br>V<br>[pF], CAPACITANCE<br>ob<br>C [A], COLLECTOR CURRENTIC<br>[W], POWER DISSIPATIONPC<br>**----- End of picture text -----**<br>


**Figure 5. Power Derating** 

© 2009 Fairchild Semiconductor Corporation D44H11TU Rev. B1 

www.fairchildsemi.com 

2 

## **Mechanical Dimensions** 

**==> picture [61 x 15] intentionally omitted <==**

**----- Start of picture text -----**<br>
TO-220<br>**----- End of picture text -----**<br>


**==> picture [411 x 462] intentionally omitted <==**

Dimensions in Millimeters 

© 2009 Fairchild Semiconductor Corporation D44H11TU Rev. B1 

www.fairchildsemi.com 

3 

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## **DISCLAIMER** 

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. 

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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. 

## As used herein: 

1. Life support devices or systems are devices or systems which, (a) are 2. A critical component in any component of a life support, device, or intended for surgical implant into the body or (b) support or sustain life, system whose failure to perform can be reasonably expected to and (c) whose failure to perform when properly used in accordance cause the failure of the life support device or system, or to affect its with instructions for use provided in the labeling, can be reasonably safety or effectiveness. expected to result in a significant injury of the user. 

## **ANTI-COUNTERFEITING POLICY** 

Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com, under Sales Support. 

Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. 

## **PRODUCT STATUS DEFINITIONS** 

## **Definition of Terms** 

|**Definition of Terms**|||
|---|---|---|
|**Datasheet Identification**|**Product Status**|**Definition**|
|Advance Information|Formative / In Design|Datasheet contains the design specifications for product development. Specifications may change in<br>anymanner without notice.|
|Preliminary|First Production|Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild<br>Semiconductor reserves the right to make changes at anytime without notice to improve design.|
|No Identification Needed|Full Production|Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes<br>at anytime without notice to improve the design.|
|Obsolete|Not In Production|Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.<br>The datasheet is for reference information only.|



Rev. I39 

© 2008 Fairchild Semiconductor Corporation 

www.fairchildsemi.com