CS20-14IO1

## **CS20-14io1** 

## **Thyristor** 

**VRRM** _**=**_ **1400 V I TAV** _**=**_ **20 A VT** _**=**_ **1.23 V** 

## Single Thyristor 

## **Part number** 

**CS20-14io1** 

Backside: anode 

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## **Features / Advantages:** 

- Thyristor for line frequency 

- Planar passivated chip 

- Long-term stability 

## TO-247 

## **Applications:** 

## **Package:** 

- Line rectifying 50/60 Hz ● Industry standard outline 

- Softstart AC motor control 

   - RoHS compliant 

- DC Motor control 

   - Epoxy meets UL 94V-0 

- Power converter 

- AC power control 

- Lighting and temperature control 

## **Disclaimer Notice** 

Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. 

IXYS reserves the right to change limits, conditions and dimensions. 

Data according to IEC 60747and per semiconductor unless otherwise specified 

20191129c 

© 2019 IXYS all rights reserved 

**CS20-14io1** 

|**Thyristor**|**Thyristor**|**Ratings**|**Ratings**|**Ratings**|**Ratings**|**Ratings**|
|---|---|---|---|---|---|---|
|**Symbol**<br>**Definition**<br>**Conditions**|||**min.**|**typ.**|**max.**|**Unit**|
|**V**<br>**RSM/DSM**<br>_max. non-repetitive reverse/forward blocking voltage_||T    =   25°C<br>VJ|||1500|V|
|**V**<br>**RRM/DRM**<br>_max. repetitive reverse/forward blocking voltage_||T    =   25°C<br>VJ|||1400|V|
|**I**<br>**R/D**<br>_reverse current, drain current_|V    =          V<br>V    =          V<br>1400<br>1400<br>R/D<br>R/D|T    =   25°C<br>VJ<br>T    =       °C<br>VJ<br>125|||20<br>2|mA<br>µA|
|**VT**<br>_forward voltage drop_|I   =         A<br>T<br>20<br>I   =         A<br>40<br>T|T    =   25°C<br>VJ|||1.27<br>1.53|V<br>V|
||I   =         A<br>T<br>20<br>I   =         A<br>40<br>T|T    =       °C<br>VJ<br>125|||1.23<br>1.57|V<br>V|
|**I**<br>**I**<br>_RMS forward current_<br>**T(RMS)**<br>**TAV**<br>_average forward current_|T  =       °C<br>C<br>130<br>180° sine|T    =       °C<br>VJ<br>150|||20<br>31|A<br>A|
|**VT0**<br>**rT**<br>_threshold voltage_<br>_slope resistance_<br>_for power loss calculation only_||T    =       °C<br>VJ<br>150|||0.87<br>17.3|V<br>mΩ|
|**R**<br>**thJC**<br>_thermal resistance junction to case_|||||0.6|K/W|
|**RthCH**<br>_thermal resistance case to heatsink_||||0.3||K/W|
|**Ptot**<br>_total power dissipation_||T    =   25°C<br>C|||200|W|
|**ITSM**<br>_max. forward surge current_|t =  10 ms; (50 Hz), sine<br>t = 8,3 ms; (60 Hz), sine|T    =   45°C<br>VJ<br>V    = 0 V<br>R|||260<br>280|A<br>A|
||t =  10 ms; (50 Hz), sine|T    =       °C<br>VJ<br>150|||220<br>240|A<br>A|
||<br>t = 8,3 ms; (60 Hz), sine|V    = 0 V<br>R|||||
|**I²t**<br>_value for fusing_|t =  10 ms; (50 Hz), sine<br>t = 8,3 ms; (60 Hz), sine|T    =   45°C<br>V    = 0 V<br>VJ<br>R|||340<br>325|A²s<br>A²s|
||t =  10 ms; (50 Hz), sine<br>t = 8,3 ms; (60 Hz), sine|T    =       °C<br>150<br>V    = 0 V<br>VJ<br>R|||240<br>240|A²s<br>A²s|
|**CJ**<br>_junction capacitance_|V  =         V<br>400<br>f = 1 MHz<br>R|T    =   25°C<br>VJ||16||pF|
|**PGM**<br>_max. gate power dissipation_<br>**PGAV**<br>_average gate power dissipation_|t  =   30 µs<br>P<br>t  =<br>P<br>300 µs|T    =       °C<br>C<br>150|||10<br>5<br>0.5|W<br>W<br>W|
|**(di/dt)cr**<br>_critical rate of rise of current_|repetitive,   I   =<br>TVJ = 125°C; f = 50 Hz<br>t  =        µs;<br>I<br>A; V  =⅔V<br>60 A<br>T<br>P<br>G =<br>0.3<br>di  /dt<br>A/µs;<br>G<br>= 0.3<br>DRM<br>non-repet., I   =<br>20 A<br>T<br>200|repetitive,   I   =<br>60 A<br>T|||150|A/µs|
||||||500|A/µs|
|**(dv/dt)**<br>_critical rate of rise of voltage_<br>**cr**|T<br>= 125°C<br>R     =∞; method 1 (linear voltage rise)<br>VJ<br>V  =⅔VDRM<br>GK||||1000|V/µs|
|**VGT**<br>_gate trigger voltage_<br>**IGT**<br>_gate trigger current_|V = 6 V<br>T<br>=<br>°C<br>25<br>D<br>VJ<br>T<br>=<br>°C<br>-40<br>VJ<br>V = 6 V<br>T<br>=<br>°C<br>25<br>D<br>VJ<br>T<br>=<br>°C<br>-40<br>VJ||||1.3<br>50<br>1.6<br>80|V<br>mA<br>V<br>mA|
|**VGD**<br>_gate non-trigger voltage_<br>**IGD**<br>_gate non-trigger current_|T<br>=<br>°C<br>VJ<br>V  =⅔V<br>D<br>DRM<br>125||||0.2<br>5|V<br>mA|
|_latching current_<br>**IL**|T<br>=<br>°C<br>VJ<br>25<br>t<br>µs<br>p =<br>10<br>I<br>A;<br>=<br>03<br>di  /dt<br>A/s<br><br>=<br>03||||150|mA|
||G <br>.<br> <br>µ<br>G<br><br>.||||||
|_holding current_<br>**IH**|T<br>=<br>°C<br>VJ<br>25<br>V = 6 V<br>D<br>R    =∞<br>GK||||100|mA|
|_gate controlled delay time_<br>**tgd**|T<br>=<br>°C<br>VJ<br>25<br>I<br>A;<br>G =<br>0.3<br>di  /dt<br>A/µs<br>G<br>=<br>0.3<br>V   = ½ V<br>D<br>DRM||||2|µs|
|_turn-off time_<br>**tq**|T<br>=<br>°C<br>VJ<br>di/dt =<br>A/µs<br>15<br>dv/dt =<br>V/µs<br>20<br>V   =<br>R<br>100 V; I<br>A;<br>T =<br>20<br>V  =⅔VDRM<br>t<br>µs<br>p = 200<br>125|||150||µs|



IXYS reserves the right to change limits, conditions and dimensions. 

Data according to IEC 60747and per semiconductor unless otherwise specified 

20191129c 

© 2019 IXYS all rights reserved 

**CS20-14io1** 

|**Ratings**<br>**Package**<br>**TO-247**|**Ratings**<br>**Package**<br>**TO-247**|**Ratings**<br>**Package**<br>**TO-247**|**Ratings**<br>**Package**<br>**TO-247**|**Ratings**<br>**Package**<br>**TO-247**|
|---|---|---|---|---|
|**Symbol**<br>**Definition**<br>**Conditions**|**min.**|**typ.**|**max.**|**Unit**|
|**I RMS**<br>_RMS current_<br>per terminal|||70|A|
|**TVJ**<br>_virtual junction temperature_|-40||150|°C|
|**Top**<br>_operation temperature_|-40||125|°C|
|**Tstg**<br>_storage temperature_|-40||150|°C|
|**Weight**||6||g|
|**M D**<br>_mounting torque_<br>**FC**<br>_mounting force with clip_|0.8||1.2||
||20||||



## Product Marking 

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Logo IXYS<br>Part Number XXXXXXXXX<br>Date Code yywwZ<br>1234<br>Lot#<br>Location<br>**----- End of picture text -----**<br>


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|**Ordering**||**Ordering Number**|**Marking on Product**|**Marking on Product**|**Delivery Mode**|**Quantity**|**Code No.**|
|---|---|---|---|---|---|---|---|
|Standard||CS20-14io1|CS20-14io1||Tube|30|466522|
|||||||||
|||**Similar Part**|**Package**|**Voltage class**||||
|||CS20-12io1|TO-247AD(3)|1200||||
|||CS20-16io1|TO-247AD(3)|1600||||



|**Equivalent Circuits for Simulation**<br>T    =<br>VJ<br>°C<br>_* on die level_<br>150|**Equivalent Circuits for Simulation**<br>T    =<br>VJ<br>°C<br>_* on die level_<br>150|
|---|---|
|I|V0<br>~~R~~0|



IXYS reserves the right to change limits, conditions and dimensions. 

Data according to IEC 60747and per semiconductor unless otherwise specified 

20191129c 

© 2019 IXYS all rights reserved 

**CS20-14io1** 

## **Outlines TO-247** 

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|||||||||
|---|---|---|---|---|---|---|---|
|A|D2|
|E|A2|Ø P|Ø P1|
|Q|S|Sym.|Inches|Millimeter|
|min.|max.|min.|max.|
|A|0.185|0.209|4.70|5.30|
|D1|A1|0.087|0.102|2.21|2.59|
|D|A2|0.059|0.098|1.50|2.49|
|D|0.819|0.845|20.79|21.45|
|2x E2|
|E|0.610|0.640|15.48|16.24|
|4|E2|0.170|0.216|4.31|5.48|
|e|0.215 BSC|5.46 BSC|
|1|2|3|L|0.780|0.800|19.80|20.30|
|L1|-|0.177|-|4.49|
|L1|E1|Ø P|0.140|0.144|3.55|3.65|
|Q|0.212|0.244|5.38|6.19|
|S|0.242 BSC|6.14 BSC|
|L|b|0.039|0.055|0.99|1.40|
|b2|0.065|0.094|1.65|2.39|
|b4|0.102|0.135|2.59|3.43|
|c|0.015|0.035|0.38|0.89|
|2x b2|
|C|D1|0.515|-|13.07|-|
|3x b|
|D2|0.020|0.053|0.51|1.35|
|b4|A1|
|E1|0.530|-|13.45|-|
|2x e|Ø P1|-|0.29|-|7.39|

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IXYS reserves the right to change limits, conditions and dimensions. 

Data according to IEC 60747and per semiconductor unless otherwise specified 

20191129c 

© 2019 IXYS all rights reserved 

**CS20-14io1** 

## **Thyristor** 

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60 250 1000<br>50 Hz, 80% VRRM V R  = 0 V<br>200<br>40 TVJ = 45°C TVJ = 45°C<br>IT ITSM 150 I [2] t 100 TVJ = 125°C<br>[A]<br>[A] [A [2] s]<br>20 TVJ = 125°C<br>100<br>125°C<br>150°C<br>TVJ = 25°C<br>0 50 10<br>0,5 1,0 1,5 2,0 0,01 0,1 1 1 2 3 4 5 6 7 8 910<br>VT [V] t  [s] t  [ms]<br>Fig. 1 Forward characteristics Fig. 2 Surge overload current Fig. 3 I [2] t versus time (1-10 ms)<br>10 1: IGD, TVJ = 150 ° C 1000 80<br>2: I GT , T VJ = 25°C<br>3: IGT, TVJ = -40°C dc =<br>1<br>6 60 0.5<br>100 0.4<br>VG 2 3 tgd typ. Limit IT(AV)M 0.330.17<br>1 40 0.08<br>5<br>[V] 1 [µs] [A]<br>4 10<br>TVJ = 125°C 20<br>4: P GAV = 0.5 W<br>5: PGM = 5 W<br>6: PGM = 10 W<br>0,1 1 0<br>1 10 100 1000 10000 10 100 1000 0 25 50 75 100 125 150<br>IG [mA] IG [mA] TC [°C]<br>Fig. 4 Gate trigger characteristics Fig. 5 Gate controlled delay time Fig. 6 Max. forward current<br>at case temperature<br>dc = RthHA<br>30 1 0.6 0,6<br>0.5 0.8<br>0.4 1.0<br>0.33 2.0<br>0.17 4.0 ZthJC<br>20 0.08 8.0 0,4<br>P<br>(AV) [K/W]<br>R thi [K/W] t i [s]<br>[W] 0.08 0.01<br>10 0,2 0.06 0.0001<br>0.20 0.03<br>0.10 0.30<br>0.16 0.11<br>0 0,0<br>0 10 20 0 50 100 150 10 [0] 10 [1] 10 [2] 10 [3] 10 [4]<br>IT(AV) [A] Tamb [°C] t  [ms]<br>Fig. 7a Power dissipation versus direct output current Fig. 8 Transient thermal impedance junction to case<br>Fig. 7b and ambient temperature<br>**----- End of picture text -----**<br>


IXYS reserves the right to change limits, conditions and dimensions. 

Data according to IEC 60747and per semiconductor unless otherwise specified 

20191129c 

© 2019 IXYS all rights reserved 

**CS20-14io1** 

IXYS reserves the right to change limits, conditions and dimensions. 

Data according to IEC 60747and per semiconductor unless otherwise specified 

20191129c 

© 2019 IXYS all rights reserved