CPH6354-TL-W

## **CPH6354** 

## **Power MOSFET –60V, 100m** Ω **, –4A, Single P-Channel** 

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## **Features** 

- ON-resistance  RDS(on)1=77mΩ(typ.) 

- 4V Drive 

- ESD Diode - Protected Gate 

- Pb-Free, Halogen Free and RoHS Compliance 

## **Specifications** 

## **Absolute Maximum Ratings** at Ta=25°C 

|**Absolute Maximum Ratings**at Ta=25°C|at Ta=25°C||||
|---|---|---|---|---|
|Parameter|Symbol|Conditions|Value|Unit|
|Drain-to-Source Voltage|VDSS||--60|V|
|Gate-to-Source Voltage|VGSS||±20|V|
|Drain Current (DC)|ID||--4|A|
|Drain Current (Pulse)|IDP|PW≤10ms, dutycycle≤1%|--16|A|
|Power Dissipation|PD|When mounted on ceramic substrate (1500mm<br>2×0.8mm)|1.6|W|
|Junction Temperature|Tj||150|°C|
|Storage Temperature|Tstg||--55 to +150|°C|



## **Thermal Resistance Ratings** 

Parameter Symbol Value Unit ~~ooo~~ When mounted on ceramic substrate (1500mmJunction to Ambient 2×0.8mm) RθJA 78.1 °C/W **Package Dimensions Product & Package Information** unit : mm (typ) • Package : CPH6 7018A-003 • JEITA, JEDEC : SC-74, SOT-26, SOT-457 • Minimum Packing Quantity : 3,000 pcs./reel CPH6354-TL-H 2.9 0.15 CPH6354-TL-W **Packing Type: TL Marking** _6 5 4_ 0.05 TL 

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CPH6354-TL-H<br>2.9 0.15 CPH6354-TL-W Packing Type: TL<br>6 5 4<br>0.05<br>TL<br>1 2 3<br>0.95 0.4 1 : Drain<br>2 : Drain Electrical Connection<br>3 : Gate<br>4 : Source 1, 2, 5, 6<br>5 : Drain<br>6 : Drain<br>CPH6<br>3<br>ORDERING INFORMATION ae<br>4<br>0.6<br>0.2<br>2.8 1.6<br>0.6<br>0.2<br>0.9<br>**----- End of picture text -----**<br>


## **ORDERING INFORMATION** 

See detailed ordering and shipping information on page 2 of this data sheet. 

© Semiconductor Components Industries, LLC, 2014 **November 2014 - Rev. 2** 

Publication Order Number : **CPH6354/D** 

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**CPH6354** 

## **Electrical Characteristics** at Ta=25°C 

|**Electrical Characteristics **at Ta|=25°C||||||
|---|---|---|---|---|---|---|
|Parameter|Symbol|Conditions|Value|||Unit|
||||min|typ|max||
|Drain-to-Source Breakdown Voltage|V(BR)DSS|ID=--1mA, VGS=0V|--60|||V|
|Zero-Gate Voltage Drain Current|IDSS|VDS=--60V, VGS=0V|||--1|mA|
|Gate-to-Source Leakage Current|IGSS|VGS=±16V, VDS=0V|||±10|mA|
|Gate Threshold Voltage|VGS(th)|VDS=--10V, ID=--1mA|--1.2||--2.6|V|
|Forward Transconductance|gFS|VDS=--10V, ID=--2A||4.8||S|
|Static Drain-to-Source On-State Resistance|RDS(on)1|ID=--2A, VGS=--10V||77|100|mΩ|
||RDS(on)2|ID=--1A, VGS=--4.5V||96|135|mΩ|
||RDS(on)3|ID=--1A, VGS=--4V||103|145|mΩ|
|Input Capacitance|Ciss|VDS=--20V, f=1MHz||600||pF|
|Output Capacitance|Coss|||60||pF|
|Reverse Transfer Capacitance|Crss|||50||pF|
|Turn-ON Delay Time|td(on)|See specifed Test Circuit.||5.8||ns|
|Rise Time|tr|||12||ns|
|Turn-OFF Delay Time|td(off)|||78||ns|
|Fall Time|tf|||40||ns|
|Total Gate Charge|Qg|VDS=--30V, VGS=--10V, ID=--4A||14||nC|
|Gate-to-Source Charge|Qgs|||1.6||nC|
|Gate-to-Drain “Miller” Charge|Qgd|||3.4||nC|
|Forward Diode Voltage|VSD|IS=--4A, VGS=0V||--0.84|--1.2|V|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

## **Switching Time Test Circuit** 

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VIN VDD= --30V<br>0V<br>--10V<br>ID= --2A<br>VIN RL=15Ω<br>D VOUT<br>PW=10ms<br>D.C.≤1%<br>G<br>CPH6354<br>P.G 50Ω S<br>**----- End of picture text -----**<br>


## **ORDERING INFORMATION** 

|Device|Package|Shipping|memo|
|---|---|---|---|
|CPH6354-TL-H|CPH6|3,000pcs./reel|Pb-Free and Halogen Free|
|CPH6354-TL-W||||



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**CPH6354** 

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ID  --  VDS ID  --  VGS<br>--4.0 --8<br>VDS= --10V<br>--3.5 --7<br>--3.0 --6<br>--2.5 --5<br>--2.0 --4<br>--1.5 --3<br>--1.0 --2<br>--0.5 --1<br>0 0<br>0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 0 --1 --2 --3 --4 --5 --6<br>Drain-to-Source Voltage, VDS  --  V IT16614 Gate-to-Source Voltage, VGS  --  V IT16615<br>RDS(on)  --  VGS RDS(on)  --  Ta<br>220 300<br>Ta=25°C<br>200<br>180 ID= --1A 250<br>160 --2A<br>200<br>140<br>120<br>150<br>100<br>80<br>100<br>60<br>40 50<br>20<br>0 0<br>0 --2 --4 --6 --8 --10 --12 --14 --16 --60 --40 --20 0 20 40 60 80 100 120 140 160<br>Gate-to-Source Voltage, VGS  --  V IT16616 Ambient Temperature, Ta  --  °C IT16617<br>gFS --  ID IS  --  VSD<br>10 --10<br>7 VDS= --10V 7 VGS=0V<br>5<br>5<br>3<br>2<br>3<br>2 --1.0<br>7<br>5<br>1.0 3<br>7 2<br>5 --0.1<br>7<br>3 5<br>2 3<br>2<br>0.1 --0.01<br>--0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2<br>Drain Current, ID  --  A HD16618 Forward Diode Voltage, VSD  --  V IT16619<br>SW Time  --  ID Ciss,  Coss,  Crss  --  VDS<br>100 1000<br>f=1MHz<br>7 7<br>5 5<br>3 3<br>2 2<br>10 100<br>7 7<br>5 5<br>3 3<br>2 2<br>VDD= --30V<br>1.0 VGS= --10V 10<br>--0.1 2 3 5 7 --1.0 2 3 5 7 --10 0 --10 --20 --30 --40 --50 --60<br>Drain Current, ID  --  A IT16620 Drain-to-Source Voltage, VDS  --  V IT16621<br>td(on)<br>tf<br>Ciss<br>VGS= --2.5V<br>td(off)<br>Crss<br>Coss<br>VGS= --10.0V, ID= --2A<br>VGS= --4.0V, ID= --1A<br>VGS= --4.5V, ID= --1A<br>tr<br>°C<br>75<br>--3.0V<br>°C<br>Ta= --25<br>25°C<br>--4.0V<br>--4.5V<br>25°C<br>--16.0V<br>--10.0V<br>--6.0V<br>°C<br>Ta=75<br>°C<br>25<br>°C<br>Ta=75<br>°C<br>--25<br>°C<br>--25<br>Drain Current, ID  --  A Drain Current, ID  --  A<br>Ω Ω<br>Static Drain-to-Source On-State Resistance, RDS(on)  --  m Static Drain-to-Source On-State Resistance, RDS(on)  --  m<br>  --  S<br>gFS<br>Source Current, IS  --  A<br>Forward Transconductance,<br>Ciss, Coss, Crss  --  pF<br>Switching Time, SW Time  --  ns<br>**----- End of picture text -----**<br>


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**CPH6354** 

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S O A<br>--100<br>75<br>5<br>3<br>2<br>--10<br>7<br>5<br>3<br>2<br>--1.0<br>7<br>5<br>3<br>2 Operation in this area<br>--0.177 is limited by RDS(on).<br>53 Ta=25°C°CC<br>2 Single pulse<br>--0.01 When mounted on ceramic substrate (1500mm [[2]] ×0.8mm)0.8mm)<br>--0.01 2 3 5 7--0.1--0.1 2 3 5 7--1.0--1.0 2 3 5 7--10--10 2 3 5 7--100<br>Drain-to-Source Voltage, VDS  --  V HD16623<br>IDP= --16A (PW≤10ms)≤10ms)10ms)ms)s)<br>ID= --4A<br>10ms<br>100ms<br>DC operation (<br>Ta=25°°<br>C))<br>100<br>mss<br>1ms<br>Drain Current, ID  --  A<br>**----- End of picture text -----**<br>


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VGS  --  Qg S O A<br>--10 --100<br>VDS= --30V 75<br>--9 ID= --4A 3<br>2<br>--8<br>--10<br>--7 7<br>5<br>--6 3<br>2<br>--5 --1.0<br>7<br>5<br>--4<br>3<br>2<br>--3 Operation in this area<br>--2 --0.177 is limited by RDS(on).<br>353 Ta=25°C°CC<br>--1<br>2 Single pulse<br>0 --0.01 When mounted on ceramic substrate (1500mm [[2]] ×0.8mm)0.8mm)<br>0 2 4 6 8 10 12 14 16 --0.01 2 3 5 7--0.1--0.1 2 3 5 7--1.0--1.0 2 3 5 7--10--10 2 3 5 7--100<br>Total Gate Charge, Qg  --  nC IT16622 Drain-to-Source Voltage, VDS  --  V HD16623<br>PD  --  Ta<br>1.8<br>When mounted on ceramic substrate<br>1.6 (1500mm [2] ×0.8mm)<br>1.4<br>1.2<br>1.0<br>0.8<br>0.6<br>0.4<br>0.2<br>0<br>0 25 50 75 100 125 150 175<br>Ambient Temperature, Ta  --  °C HD16624<br>RθJA  --  Pulse Time<br>100<br>7<br>5<br>3<br>2<br>10<br>7<br>5<br>3<br>2<br>1.0<br>7<br>5<br>3<br>2<br>0.1<br>7<br>5<br>3 When mounted on ceramic substrate<br>2 (1500mm [2] ×0.8mm)<br>0.01<br>0.000001 2 3 5 70.00001 2 3 5 7 0.0001 2 3 5 7 0.001 2 3 5 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10<br>Pulse Time, PT  --  s HD141028<br>IDP= --16A (PW≤10ms)≤10ms)10ms)ms)s)<br>0.2<br>0.01<br>ID= --4A<br>Duty Cycle=0.5<br>0.05<br>0.02<br>0.1<br>Single Pulse<br>10ms<br>100ms<br>DC operation (<br>Ta=25°°<br>C))<br>100<br>mss<br>1ms<br>Drain Current, ID  --  A<br>Gate-to-Source Voltage, VGS  --  V<br>Power Dissipation, PD  --  W<br>JA  --  ºC/W<br>θ<br>Thermal Resistance, R<br>**----- End of picture text -----**<br>


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**CPH6354** 

## **Outline Drawing** 

## **Land Pattern Example** 

CPH6354-TL-H, CPH6354-TL-W 

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Mass (g) Unit Unit: mm<br>0.015<br>* For reference [mm]<br>0.6<br>0.95 0.95<br>1.4<br>2.4<br>**----- End of picture text -----**<br>


Note on usage : Since the CPH6354 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 

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