CPH5902G-TL-E.
JFET Transistor, 1.5 V, SOT-25, 5 Pin, 150 °C
- Manufacturer: ONSEMI
- Product type: JFETs
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (19-Jan-2021)
- No. of Pins: 5 Pin
- Channel Type: N Channel
- Product Range: -
- Qualification: -
- Transistor Mounting: Surface Mount
- Transistor Case Style: SOT-25
- Operating Temperature Max: 150°C
- Gate Source Cutoff Voltage Max: 1.5V
- Gate Source Breakdown Voltage Max: -
- Zero Gate Voltage Drain Current Max: -
| Delivery and price | |
|---|---|
| Units per pack | 3000 |
| Price | 0.2 € |
| Current stock | 10+ |
| Lead time | 30 days |
**Ordering number : EN6962C** ## **CPH5902** ## **N-Channel JFET and NPN Bipolar Transistor 15V, 10 to 32mA, 50V, 150mA, Composite type CPH5** http://onsemi.com ## **Features** - Composite type with J-FET and NPN transistors contained in the CPH5 package, improving the mounting - effi ciency greatly - [•] The CPH5902 contains a 2SK2394-equivalent chip and a 2SC4639-equivalent chip in one package - [•] Drain and emitter are shared ## **Specifi cations** ## **Absolute Maximum Ratings** at Ta=25°C |**Absolute Maximum Ratingsgss**at Ta=25°C|at Ta=25°C|||| |---|---|---|---|---| |Parameter|Symbol|Conditions|Ratings|Unit| |[FET]||||| |Drain-to-Source Voltage|VDSX||15|V| |Gate-to-Drain Voltage|VGDS||--15|V| |Gate Current|IG||10|mA| |Drain Current|ID||50|mA| |Allowable Power Dissipation|PD|Mounted on a ceramic board (600mm<br>2×0.8mm)|350|mW| |[TR]||||| |Collector-to-Base Voltage|VCBO||55|V| |Collector-to-Emitter Voltage|VCEO||50|V| |Emitter-to-Base Voltage|VEBO||6|V| |Collector Current|IC||150|mA| |Collector Current(Pulse)<br>|ICP<br>||300<br>~~=~~|mA<br>~~=~~| |Base Current<br>~~SS~~|IB<br>~~SS~~|~~SS~~|30<br>~~SS=~~|mA<br>~~SS=~~| |Collector Dissipation<br>~~SS~~|PC<br>~~SS~~|Mounted on a ceramic board (600mm<br>2×0.8mm)<br>~~SS~~|350<br>~~SS=~~|mW<br>~~SS=~~| |[TR]<br>~~SS=~~||||| |Total Power Dissipation<br>~~SS~~|PT<br>~~SS~~|Mounted on a ceramic board(600mm<br>2×0.8mm)<br>~~SS~~|500<br>~~SS=~~|mW<br>~~SS=~~| |Junction Temperature<br>~~SS~~|Tj<br>~~SS~~|~~SS~~|150<br>~~SS=~~|°C<br>~~SS=~~| |Storage Temperature<br>~~SS~~|Tstg<br>~~SS~~|~~SS~~|--55 to +150<br>~~SS=~~|°C<br>~~SS=~~| Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. ## **Package Dimensions** unit : mm (typ) 7017A-007 ## **Product & Package Information** - Package : CPH5 - JEITA, JEDEC : SC-74A, SOT-25 **==> picture [443 x 177] intentionally omitted <==** **----- Start of picture text -----**<br> • Minimum Packing Quantity : 3,000 pcs./reel<br>CPH5902G-TL-E<br>2.9 0.15<br>5 4 3 CPH5902H-TL-E Packing Type : TL Marking<br>0.05<br>TL<br>f<br>1 2 1 : Collector<br>0.95 0.4<br>2 : Gate Electrical Connection<br>3 : Source 5 4 3<br>4 : Emitter/Drain<br>5 : Base<br>CPH5<br>_ he<br>1 2<br>0.6<br>0.2<br>2.8 1.6 RB RANK LOT No.<br>0.6<br>0.2<br>0.9<br>**----- End of picture text -----**<br> Semiconductor Components Industries, LLC, 2013 **August, 2013** 60612 TKIM/62005AC MSIM TB-00001588/22004 TSIM TA-101143/52501 TSIM TA-3247 No.6962-1/8 **CPH5902** ## **Electrical Characteristics** at Ta=25°C |**Electrical Characteristics **at Ta|=25°C|||||| |---|---|---|---|---|---|---| |Parameter|Symbol|Conditions|Ratings|||Unit| ||||min|typ|max|| |[FET]||||||| |Gate-to-Drain Breakdown Voltage|V(BR)GDS|IG=--10μA, VGS=0V|--15|||V| |Gate Cutoff Current|IGSS|VGS=--10V, VDS=0V|||--1.0|nA| |Cutoff Voltage|VGS(off)|VDS=5V, ID=100μA|--0.4|--0.7|--1.5|V| |Drain Current|IDSS|VDS=5V, VGS=0V|10.0*||32.0*|mA| |Forward Transfer Admittance||yfs||VDS=5V, VGS=0V, f=1kHz|24|38||mS| |Input Capacitance|Ciss|VDS=5V, VGS=0V, f=1kHz||10.0||pF| |Reverse Transfer Capacitance|Crss|VDS=5V, VGS=0V, f=1kHzz||2.9||pF| |Noise Figure|NF|VDS=5V, Rg=1kΩ, ID=1mA, f=1kHz||1.0||dB| |[TR]||||||| |Collector Cutoff Current|ICBO|VCB=35V, IE=0A|||0.1|μA| |Emitter Cutoff Current|IEBO|VEB=4V, IC=0A|||0.1|μA| |DC Current Gain|hFE|VCE=6V, IC=1mA|135||400|| |Gain-Bandwidth Product|fT|VCE=6V, IC=10mA||200||MHz| |Output Capacitance|Cob|VCB=6V, f=1MHz||1.7||pF| |Collector-to-Emitter Saturation Voltage|VCE(sat)|IC=50mA, IB=5mA||0.08|0.4|mV| |Base-to-Emitter Saturation Voltage|VBE(sat)|IC=50mA, IB=5mA||0.8|1.0|V| |Collector-to-Base Breakdown Voltage|V(BR)CBO|IC=10μA, IE=0A|55|||V| |Collector-to-Emitter Breakdown Voltage|V(BR)CEO|IC=1mA, RBE=∞|50|||V| |Emitter-to-Base Breakdown Voltage|V(BR)EBO|IE=10μA, IC=0A|6|||V| |Turn-On Time|ton|See specif ed Test Circuit.||0.15||ns| |Storage Time|tstg|||0.75||ns| |Fall Time|tf|||0.20||ns| * : The CPH5902 is classifi ed by IDSS as follows : (unit : mA) |Rank|G|H| |---|---|---| |IDSS|10.0 to 20.0|16.0 to 32.0| The specifi cations shown above are for each individual FET or transistor. ## **Switching Time Test Circuit** **==> picture [178 x 120] intentionally omitted <==** **----- Start of picture text -----**<br> IB1<br>PC=20 μ s OUTPUT<br>D.C. ≤ 1% IB2<br>INPUT 1k Ω RL<br>VR 2k Ω<br>50 Ω<br>+ +<br>220 μ F 470 μ F<br>VBE= --5V VCC=20V<br>10IB1= --10IB2=IC=10mA<br>**----- End of picture text -----**<br> ## **Ordering Information** |**Ordering Information**|||| |---|---|---|---| |Device|Package|Shipping|memo| |CPH5902G-TL-E|CPH5|3,000pcs./reel|Pb Free| |CPH5902H-TL-E|CPH5|3,000pcs./reel|| No.6962-2/8 **CPH5902** **==> picture [471 x 737] intentionally omitted <==** **----- Start of picture text -----**<br> ID -- VDS ID -- VDS<br>20 20<br>16 16<br>PT FET ] (LEE<br>12 12<br>Pees [cee<br>8 8<br>Zann Aa<br>4 4<br>L=—— s—-_<br>0 a 0 _x<br>0 0.4 0.8 1.2 1.6 2.0 0 2 4 6 8 10<br>Drain-to-Source Voltage, VDS -- V ITR10364 Drain-to-Source Voltage, VDS -- V ITR10365<br>ID -- VGS ID -- VGS<br>22 16<br>VDS=5V VDS=5V<br>20 ee 14 I DSS =15mA TTF<br>18<br>16 o e 12<br>14 10<br>12 eee eee<br>8<br>10<br>8 A 6 Lf<br>6 a FG n/a<br>4<br>4 /,vA a Ae<br>2<br>2 OO<br>0 sae 0 ES<br>--1.4 --1.2 --1.0 --0.8 --0.6 --0.4 --0.2 0 --1.2 --1.0 --0.8 --0.6 --0.4 --0.2 0<br>Gate-to-Source Voltage, VGS -- V IT03287 Gate-to-Source Voltage, VGS -- V ITR10367<br>| yfs | -- ID | yfs | -- IDSS<br>7 100<br>5 VDS=5V f=1kHz PF | t f p VDS=5VVGS=0V<br>7 f=1kHz<br>3<br>5<br>isn<br>2<br>| ea<br>107 RZPw? 3<br>2<br>352 PtiSECPittft ftti Ti ittyttt ttt ff tt 10<br>3 5 7 1.0 2 3 5 7 10 2 3 5 7 10 2 3 5<br>Drain Current, ID -- mA IT03288 Drain Current, IDSS -- mA IT03289<br>VGS(off) -- IDSS Ciss -- VDS<br>2 3<br>VDS=5V VGS=0V<br>ID=100μA 2 P| of | of | f=1MHz<br>--1.0<br>10 PET<br>7 7 P| | | | | ft |<br>5<br>5 ee eee<br>3<br>3 Soe<br>2<br>2 Pt of | cf dT |<br>--0.1 1.0 fof iy<br>7 10 2 3 5 7 1.0 2 3 5 7 10 2 3<br>Drain Current, IDSS -- mA IT03290 Drain-to-Source Voltage, VDS -- V ITR10371<br>[FET] [FET]<br>[FET] [FET]<br>[FET] [FET]<br>[FET] [FET]<br>--0.5V<br>--0.5V<br>--0.6V<br>--0.6V<br>VGS=0V<br>--0.1V<br>--0.3V<br>--0.3V<br>--0.4V<br>--0.4V<br>--0.7V<br>--0.7V<br>--0.2V<br>--0.2V<br>--0.1V<br>VGS=0V<br>30mA<br>IDSS=15mA<br>°C<br>25<br>10mA<br>Ta= --25°C<br>IDSS=20mA15mA 75°C<br>Drain Current, ID -- mA Drain Current, ID -- mA<br>Drain Current, ID -- mA Drain Current, ID -- mA<br>|fs -- mS |fs -- mS<br>y y<br>| |<br>Forward Transfer Admittance, Forward Transfer Admittance,<br>Cutoff Voltage, VGS(off) -- V Input Capacitance, Ciss -- pF<br>**----- End of picture text -----**<br> No.6962-3/8 **CPH5902** **==> picture [472 x 736] intentionally omitted <==** **----- Start of picture text -----**<br> Crss -- VDS NF -- f<br>10 10<br>VGS=0V VDS=5V<br>7 f=1MHz ID=1mA<br>8 Rg=1kΩ<br>5<br>3 6<br>2<br>4<br>1.0<br>2<br>7<br>5 0<br>7 1.0 2 3 5 7 10 2 3 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7100<br>Drain-to-Source Voltage, VDS -- V ITR10372 Frequency, f -- kHz ITR10373<br>NF -- Rg PD -- Ta<br>10 400<br>VDS=5V<br>ID=1mA 350<br>f=1kHz<br>8<br>300<br>250<br>6<br>200<br>4<br>150<br>100<br>2<br>50<br>0 0<br>0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 2 3 5 71000 0 20 40 60 80 100 120 140 160<br>Signal Source Resistance, Rg -- kΩ ITR10374 Ambient Temperature, Ta -- °C IT09864<br>IC -- VCE [TR] IC -- VCE [TR]<br>50 12<br>10<br>40<br>8<br>30<br>6<br>20<br>4<br>10<br>2<br>0 IB=0μA 0 IB=0μA<br>0 0.2 0.4 0.6 0.8 1.0 0 10 20 30 40 50<br>Collector-to-Emitter Voltage, VCE -- V ITR10376 Collector-to-Emitter Voltage, VCE -- V ITR10377<br>IC -- VBE [TR] hFE -- IC [TR]<br>160 2<br>VCE=6V VCE=6V<br>140<br>1000<br>120 7<br>5<br>100<br>3<br>80<br>2<br>60<br>100<br>40<br>7<br>20 5<br>0 3<br>0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.1 2 3 5 1.0 2 3 5 10 2 3 5 100 2 3<br>Base-to-Emitter Voltage, VBE -- V ITR10378 Collector Current, IC -- mA ITR10379<br>[FET] [FET]<br>[FET] [FET]<br>30μA<br>25μA<br>20μA<br>15μA<br>50μA 10μA<br>5μA<br>Ta=75°C<br>--25°C<br>25°C<br>100μA<br>45μA<br>35μA<br>40μA<br>50μA<br>150μA<br>200μA<br>250μA<br>300μA<br>350μA<br>400μA<br>A<br>450μ<br>Mounted on a ceramic board (600mm2✕<br>0.8mm)<br>A<br>500μ<br>°C<br>Ta=75 °C<br>--25<br>°C<br>25<br>Noise Figure, NF -- dB<br>Reverse Transfer Capacitance, Crss -- pF<br>Noise Figure, NF -- dB<br>Allowable Power Dissipation, PD -- mW<br>Collector Current, IC -- mA Collector Current, IC -- mA<br>DC Current Gain, hFE<br>Collector Current, IC -- mA<br>**----- End of picture text -----**<br> No.6962-4/8 **CPH5902** **==> picture [476 x 553] intentionally omitted <==** **----- Start of picture text -----**<br> fT -- IC [TR] cib -- VEB [TR]<br>7 5<br>VCE=6V f=1MHz<br>5<br>3<br>3 2<br>2<br>10<br>7<br>100<br>5<br>7<br>3<br>5<br>2<br>3<br>2 1.0<br>1.0 2 3 5 7 10 2 3 5 7 100 2 5 7 1.0 2 3 5 7 10<br>Collector Current, IC -- mA ITR10380 Emitter-to-Base Voltage, VEB -- V ITR10381<br>Cob -- VCB [TR] VCE(sat) -- IC [TR]<br>5 3<br>f=1MHz IC / IB=10<br>2<br>3<br>2 1.0<br>7<br>10 5<br>7<br>3<br>5<br>2<br>3<br>0.1<br>2<br>7<br>5<br>1.0<br>7 3<br>5 2<br>5 7 1.0 2 3 5 7 10 2 3 5 7 100 1.0 2 3 5 7 10 2 3 5 7 100 2<br>Collector-to-Base Voltage, VCB -- V ITR10382 Collector Current, IC -- mA ITR10383<br>VBE(sat) -- IC [TR] PC -- Ta [TR]<br>10 400<br>IC / IB=10<br>7<br>350<br>5<br>300<br>3<br>250<br>2<br>200<br>150<br>1.0<br>7 100<br>5 50<br>3 0<br>1.0 2 3 5 7 10 2 3 5 7 100 2 0 20 40 60 80 100 120 140 160<br>Collector Current, IC -- mA ITR10384 Ambient Temperature, Ta -- °C IT09865<br>Ta= --25°C<br>75°C<br>25°C<br>Ta=75°C<br>--25°C<br>°C<br>25<br>Mounted on a ceramic board (600mm2✕<br>0.8mm)<br>Input Capacitance, cib -- pF<br>Gain-Bandwidth Product, fT -- MHz<br>Output Capacitance, Cob -- pF Collector-to-Emitter Saturation Voltage, VCE(sat) -- V<br>Base-to-Emitter Saturation Voltage, VBE(sat) -- V<br>Collector Dissipation, PC -- mW<br>**----- End of picture text -----**<br> No.6962-5/8 **CPH5902** ## **Embossed Taping Specifi cation** CPH5902G-TL-E, CPH5902H-TL-E **==> picture [441 x 646] intentionally omitted <==** No.6962-6/8 **CPH5902** **==> picture [158 x 23] intentionally omitted <==** **----- Start of picture text -----**<br> Outline Drawing<br> CPH5902G-TL-E, CPH5902H-TL-E<br>**----- End of picture text -----**<br> ## **Land Pattern Example** **==> picture [482 x 370] intentionally omitted <==** **----- Start of picture text -----**<br> Mass (g) Unit Unit: mm<br>0.02<br>* For reference [mm]<br>0.6<br>0.95 0.95<br>1.4<br>2.4<br>**----- End of picture text -----**<br> No.6962-7/8 **CPH5902** ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PS No.6962-8/8
Updated at April 29, 2026
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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