CPC1998J

**CPC1998 AC Power Switch** 

> I DIXYS NTEGRATED CIRCUITS DIVISION 

## **Characteristics** 

|**Parameter**|**Rating**|**Units**|
|---|---|---|
|AC Operating Voltage|20-240|Vrms|
|Load Current<br>With 5°C/W Heat Sink<br>No Heat Sink|20|Arms|
||5||
|On-State Voltage Drop|1.1|VP(at IL=2AP)|
|Blocking Voltage|800|VP|
|Thermal Impedance,<br>Junction-to-Case,JC|0.35|°C/W|



## **Features** 

## **Description** 

CPC1998J is an AC Solid State Switch utilizing dual power SCR outputs. This device also includes zero-cross turn-on circuitry and is specified with an 800VP blocking voltage. 

Tightly controlled zero-cross circuitry ensures low noise switching of AC loads by minimizing the generation of transients. The optically coupled input and output circuits provide exceptional noise immunity and 2500Vrms of isolation between the control and the output. As a result, the CPC1998 is well suited for industrial environments where electromagnetic interference would disrupt the operation of plant facility communications and control systems. 

- Load Current up to 20Arms with 5°C/W Heat Sink 

- 800VP Blocking Voltage 

- 5mA Control Current 

- Zero-Cross Switching 

- Isolated, Low Thermal Impedance Ceramic Pad for Heat Sink Applications 

- 2500Vrms Isolation, Input to Output 

- DC Control, AC Output 

- Optically Isolated 

- Low EMI and RFI Generation 

- High Noise Immunity 

- Flammability Rating UL 94 V-0 

## **Applications** 

- Programmable Control 

- Process Control 

- Power Control Panels 

- Remote Switching 

- Gas Pump Electronics 

- Contactors 

- Large Relays 

- Solenoids 

- Motors 

- Heaters 

## **Approvals** 

- UL 508 Recognized Component: File E69938 

The unique i4-PAC package pioneered by IXYS allows Solid State Relays to achieve the highest load current and power ratings. This package features a unique IXYS process in which the silicon chips are soft soldered onto the Direct Copper Bond (DCB) substrate instead of the traditional copper leadframe. The DCB ceramic, the same substrate used in high power modules, not only provides 2500Vrms isolation but also very low junction-to-case thermal impedance (0.35 °C/W). 

## **Ordering Information** 

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Part Description<br>CPC1998J i4-PAC Package (25 per tube)<br>——E<br>Pin Configuration<br>ZC<br>1 2 3 4<br>AC Load + LED – LED<br>**----- End of picture text -----**<br>


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DS-CPC1998-R06 

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**CPC1998** 

INTEGRATED CIRCUITS DIVISION 

## **1 Specifications** 

## **1.1 Absolute Maximum Ratings @ 25°C** 

|**Symbol**|**Min**|**Max**|**Units**|
|---|---|---|---|
|BlockingVoltage|-|800|VP|
|Reverse Input Voltage|-|5|V|
|Input Control Current<br>Peak(10ms)|-|50|mA|
||-|1|A|
|Input Power Dissipation1|-|150|mW|
|Total Power Dissipation2|-|3.5|W|
|I2t for Fusing<br>(1/2 Sine Wave,60Hz)|-|200|A2s|
|Isolation Voltage, Input to Output|-|2500|Vrms|
|ESD,Human BodyModel<br>Operational Temperature|-|8|kV<br>°C|
|Operational Temperature|- 40|+85|°C|
|Storage Temperature|- 40|+125|°C|



_Absolute maximum ratings are stress ratings. Stresses in excess of these ratings can cause permanent damage to the device. Functional operation of the device at conditions beyond those indicated in the operational sections of this data sheet is not implied._ 

_Typical values are characteristic of the device at +25°C, and are the result of engineering evaluations. They are provided for information purposes only, and are not part of the manufacturing testing requirements._ 

1 Derate linearly 1.33mW / °C. 

2 Free air, no heat sink. 

## **1.2 Electrical Characteristics @ 25°C** 

|**Parameter**<br>**Output Characteristics**|**Conditions**|**Symbol**|**Minimum**|**Typical**|**Maximum**|**Units**|
|---|---|---|---|---|---|---|
|**Output Characteristics**<br>~~Po~~|||||||
|Load Current<br>Continuous<br>Continuous<br>~~Po~~|No Heat Sink, VL=20-240Vrms<br>T=25°C<br>~~Po~~|IL<br>~~Po~~|0.1<br>~~Po~~|-<br>~~Po~~|5<br>~~Po~~|Arms<br>~~Po~~|
||TC=25°C<br>~~Po~~||0.1<br>~~Po~~|-<br>~~Po~~|50<br>~~Po~~||
|Maximum Surge Current<br>~~Po~~|1/2 Sine Wave, 60Hz<br>~~Po~~|IP<br>~~Po~~|-<br>~~Po~~|-<br>~~Po~~|150<br>~~Po~~|A<br>~~Po~~|
|Off-State Leakage Current<br>~~Po~~|VL=800V<br>~~Po~~|ILEAK<br>~~Po~~|-<br>~~Po~~|-<br>~~Po~~|100<br>~~Po~~|AP<br>~~Po~~|
|On-State Voltage Drop 1<br>~~rr~~|IL=2AP<br>I=0mA<br>~~rr~~|-<br>~~rr~~|-<br>~~rr~~|0.85<br>~~rr~~|1.1<br>~~rr~~|VP<br>~~rr~~|
|Off-State dV/dt<br>~~rr~~|IF=0mA<br>~~rr~~|dV/dt<br>~~rr~~|1000<br>~~rr~~|-<br>~~rr~~|-<br>~~rr~~|V/s<br>~~rr~~|
|Switching Speeds<br>Turn-On<br>Turn-Off<br>~~rr~~|IF=5mA<br>~~rr~~|ton<br>~~rr~~|-<br>~~rr~~|-<br>~~rr~~|0.5<br>~~rr~~|cycles<br>~~rr~~|
|||toff<br>~~rr~~|-<br>~~rr~~|-<br>~~rr~~|0.5<br>~~rr~~||
|Zero-Cross Turn-On Voltage2<br>~~rr~~<br>~~——<—<—<—_—<—_———~~|1sthalf-cycle<br>~~rr~~<br>~~——<—<—<—_—<—_———~~|-<br>~~rr~~<br>~~——<—<—<—_—<—_———~~|-<br>~~rr~~<br>~~——<—<—<—_—<—_———~~|5<br>~~rr~~<br>~~——<—<—<—_—<—_———~~|20<br>~~rr~~<br>~~——<—<—<—_—<—_———~~|V<br>~~rr~~<br>~~——<—<—<—_—<—_———~~|
||subsequent half-cycle<br>~~——<—<—<—_—<—_———~~|-<br>~~——<—<—<—_—<—_———~~|-<br>~~——<—<—<—_—<—_———~~|-<br>~~——<—<—<—_—<—_———~~|5<br>~~——<—<—<—_—<—_———~~||
|HoldingCurrent<br>~~——<—<—<—_—<—_———~~|-<br>~~——<—<—<—_—<—_———~~|IH<br>~~——<—<—<—_—<—_———~~|-<br>~~——<—<—<—_—<—_———~~|44<br>~~——<—<—<—_—<—_———~~|50<br>~~——<—<—<—_—<—_———~~|mA<br>~~——<—<—<—_—<—_———~~|
|LatchingCurrent<br>~~——<—<—<—_—<—_———~~|-<br>~~——<—<—<—_—<—_———~~|IL<br>~~——<—<—<—_—<—_———~~|-<br>~~——<—<—<—_—<—_———~~|48<br>~~——<—<—<—_—<—_———~~|75<br>~~——<—<—<—_—<—_———~~|mA<br>~~——<—<—<—_—<—_———~~|
|OperatingFrequency|-|-|20|-|500|Hz|
|Load Power Factor for Guaranteed Turn-On3<br>**Input Characteristics**|f=60Hz|PF|0.25|-|-|-|
|**Input Characteristics**|||||||
|Input Control Current to Activate4|IL=1A Resistive, f=60Hz|IF|-|-|5|mA|
|Input Dropout Voltage|-|-|0.8|-|-|V|
|Input Voltage Drop|IF=5mA|VF|0.9|1.2|1.5|V|
|Reverse Input Current<br>**Input/Output Characteristics**|VR=5V|IR|-|-|10|A|
|**Input/Output Characteristics**|||||||
|Capacitance, Input-to-Output|VIO=0V, f=1MHz|CIO|-|-|3|pF|



1 Tested at a peak value equivalent. 

2 Zero-cross first half-cycle @ < 100Hz. 

3 Snubber circuits may be required at low power factors. 

4 For high-noise environments, or high-frequency operation (>60Hz), or for applications with a high inductive load, a minimum LED drive current of 10mA is recommended. 

**www.ixysic.com** 

R06 

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**CPC1998** 

INTEGRATED CIRCUITS DIVISION 

## **2 Thermal Characteristics** 

|**Parameter**|**Conditions**|**Symbol**|**Rating**|**Units**|
|---|---|---|---|---|
|Thermal Impedance (Junction to Case)|-|JC|0.35|°C/W|
|Thermal Impedance (Junction to Ambient)|Free Air|JA|33|°C/W|
|Junction Temperature (Operating)|-|TJ|-40 to +125|°C|



## **2.1 Thermal Management** 

Device high current characterization was performed using Kunze heat sink KU 1-159, phase change thermal interface material KU-ALC 5, and transistor clip KU 4-499/1. This combination provided an approximate junction-to-ambient thermal impedance of 12.5°C/W. 

## **2.2 Heat Sink Calculation** 

Higher load currents are possible by using lower thermal impedance heat sink combinations. 

## **Heat Sink Rating** 

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(TJ - TA)<br>θ = -   θ<br>CA   P JC<br>D<br>**----- End of picture text -----**<br>


- TJ = Junction Temperature (°C), TJ ≤ 125°C * 

- TA = Ambient Temperature (°C) 

- θ JC = Thermal Impedance, Junction to Case (°C/W) = 0.35°C/W 

- θ CA = Thermal Impedance of Heat Sink & Thermal Interface Material , Case to Ambient (°C/W) PD = On-State Voltage (Vrms) • Load Current (Arms) 

- Elevated junction temperature reduces semiconductor lifetime. 

**NOTE:** The exposed surface of the DCB substrate is not to be soldered. 

## **2.3 Thermal Performance Data** 

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Output Power Output Power<br>vs. Load Current vs. Ambient Temperature<br>40 40<br>Heat Sink<br>35 1ºC/W 35<br>30 2 eee ee eee 2ºC/W 30<br>5ºC/W<br>25 10ºC/W 25<br>20 15ºC/W 20<br>Free Air<br>15 15<br>10 10<br>5 5<br>0 0<br>0 5 10 15 20 25 30 35 40 0 25 50 75 100 125<br>Load Current (Arms) Temperature (ºC)<br>Output Power (W) Output Power (W)<br>**----- End of picture text -----**<br>


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**CPC1998** 

INTEGRATED CIRCUITS DIVISION 

## **3 Performance Data*** 

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Typical IF for Switch Operation<br>Typical LED Forward Voltage Drop with 1A Resistive Load Forward Voltage Drop Distribution<br>(N=50, IF=5mA) (N=50, VL=120VAC/60Hz) (N=50, IF=5mA, IL=2A)<br>35 25 25<br>30<br>pt tat ft 20 FT ey 20<br>25<br>20 Se 15 | Ty 15<br>15 10 10<br>10 et 23) =e<br>50 i= | 50 amii!m | | ae= 50<br>1.25 1.26 1.27 1.28 1.29 1.30 2.66 2.70 2.74 2.78 2.82 2.86 2.90 0.856 0.859 0.862 0.865 0.868 0.871 0.874<br>LED Forward Voltage (V) LED Forward Current (mA)  Forward Voltage Drop (V)<br>Zero-Cross Voltage Typical Blocking Voltage Distribution<br>(N=50, IF=5mA) (N=50)<br>20151050 SSna8B illiERRE|||  =e Gees | fo 20151050 e iee| illFA | oe<br>6.2 6.4 6.6 6.8 7.0 7.2 7.4 874 876 878 880 882 884 886<br>Zero-Cross Voltage (V) Blocking Voltage (VP)<br>LED Forward Current to Operate LED Forward Current to Operate<br>Typical LED Forward Voltage Drop vs. Temperature - Resistive Load vs. Temperature - Inductive Load<br>1.6 vs. Temperature 4.5 (IL=1A, fL=60Hz) 7.5 (IL=500mA, fL=60Hz, LL=400mH)<br>1.5 —LTT 1 IIFF=50mA=20mA 7.0 Ne<br>IF=10mA 4.0 6.5<br>1.4 SPSS IF=5mA 6.0 ACES<br>3.5<br>1.3 See 7 | 5.5 INCE<br>5.0<br>3.0<br>1.2 PRR 4.5 SESE<br>1.1 P LT tT TEE I 2.5 4.0 2a s0<br>-40 -20 0 20 40 60 80 100 -40 -20 0 20 40 60 80 100 -40 -20 0 20 40 60 80 100<br>Temperature (ºC) Temperature (ºC) Temperature (ºC)<br>LED Current to Operate LED Current to Operate LED Current to Operate<br>vs. Load Frequency - Resistive Load vs. Load Frequency - Inductive Load vs. Load Frequency- Inductive Load<br>5.0 (VP=71V, RL=10 Ω , IL=7A) 5.20 (VL=200V, ZL=400mH/220 Ω ) 5.20 (VL=200V, ZL=196mH/110 Ω )<br>5.15<br>4.5 Po] | [| Pe p>] Ptr 5.18<br>5.10<br>4.0 4 5.05 ee 5.16<br>3.5 Itt 5.00 5.14<br>4.95<br>3.0 ptA | | | 4.90 T+LE?++ 5.12<br>2.5 Vann 4.85 PLE 5.10<br>0 100 200 300 400 500 600 0 100 200 300 400 500 600 0 100 200 300 400 500 600<br>Load Frequency (Hz) Load Frequency (Hz) Load Frequency (Hz)<br>Device Count (N) Device Count (N) Device Count (N)<br>Device Count (N) Device Count (N)<br>LED Forward Voltage (V)<br>LED Forward Current (mA) LED Forward Current (mA)<br>LED Forward Current (mA) LED Forward Current (mA) LED Forward Current (mA)<br>**----- End of picture text -----**<br>


*Unless otherwise noted, data presented in these graphs is typical of device operation at 25ºC. For guaranteed parameters not indicated in the written specifications, please contact our application department. 

**www.ixysic.com** 

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all **CPC1998** INTEGRATED CIRCUITS DIVISION ~~a~~ 

**CPC1998** 

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Zero-Cross Voltage vs. Temperature Output Voltage vs. Output Current<br>7.4 (IF=5mA, RL=120 Ω ) 15 (IF=5mA) 1.10 VON vs. Temperature<br>7.27.0 FLL ee 10 F TTTAAA=-40=25=85 ººº CCC rT 1.051.00 CLL IILL=10A=5A<br>SEE 4 5 = Nv STS |<br>0.95<br>6.8 FPS] SH ee<br>0 0.90<br>6.6 TEESE Ae<br>-5 ba 0.85<br>6.4 a es ; Wt4tT | 0.80 SSS— IL=3A pS et<br>6.2 -10 0.75 IILL=2A=1A<br>6.0 F EELEEEENLLB -15 LETFd 0.70 §2a2ee5 =<<br>-40 -20 0 20 40 60 80 100 -1.5 -1.0 -0.5 0.0 0.5 1.0 1.5 -40 -20 0 20 40 60 80 100<br>Temperature (ºC) Voltage (V) Temperature (ºC)<br>Holding Current vs. Temperature Total Heat Sinking Required Breakdown Voltage vs. Temperature<br>80 (RL=1.9 Ω ) 30 vs. Temperature 1000 (IF=0mA)<br>70 Ne 25 ZERGREE IILL=5A=7.5Armsrms<br>60 20 IILL=10A=15Armsrms 950<br>50 aN 15 SEERNEY IL=20Arms 900<br>ZN SEESED<br>40 FeE 10 4!<br>850<br>30 Fee ET NEE 5 | SBN TT<br>TP AE ZERS27.. S58<br>20 F ett EE 0 FLEE [I 800<br>-40 -20 0 20 40 60 80 100 0 10 20 30 40 50 60 70 80 90 100 -40 -20 0 20 40 60 80 100<br>Temperature (ºC) Temperature (ºC) Temperature (ºC)<br>Leakage Current vs. Temperature Maximum Surge Current<br>Measured Across Pins 1&2 Non-Repetitive, Free Air<br>100 1000<br>10 VV L L=800V=600V<br>——— VL=400V a 100 LETTIITTTIISNETTT TTT<br>1<br>0.1<br>10<br>0.01<br>———S—SSS==SS==SSS=S=S |<br>0.001 re er 1 a a<br>-40 -20 0 20 40 60 80 100 100 μ s 1ms 10ms 100ms 1s 10s<br>Temperature (ºC) Time<br> (V)<br>ON<br>V<br>Current (A)<br>Zero-Cross Voltage (V)<br>Holding Current (mA) Breakdown Voltage (V)<br>Thermal Resistance (ºC/W)<br>A)<br>μ<br>Current (A)<br>Leakage current (<br>**----- End of picture text -----**<br>


*Unless otherwise noted, data presented in these graphs is typical of device operation at 25ºC. For guaranteed parameters not indicated in the written specifications, please contact our application department. 

**www.ixysic.com** 

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**CPC1998** 

INTEGRATED CIRCUITS DIVISION 

## **4 Manufacturing Information** 

## **4.1 Moisture Sensitivity** 

All plastic encapsulated semiconductor packages are susceptible to moisture ingression. IXYS Integrated Circuits classifies its plastic encapsulated devices for moisture sensitivity according to the latest version of the joint industry standard, **IPC/JEDEC J-STD-020** , in force at the time of product evaluation. We test all of oy our products to the maximum conditions set forth in the standard, and guarantee proper operation of our devices when handled according to the limitations and information in that standard as well as to any limitations set forth in the information or standards referenced below. 

Failure to adhere to the warnings or limitations as established by the listed specifications could result in reduced product performance, reduction of operable life, and/or reduction of overall reliability. 

This product carries a **Moisture Sensitivity Level (MSL)** classification as shown below, and should be handled according to the requirements of the latest version of the joint industry standard **IPC/JEDEC J-STD-033** . 

|**Device**<br>~~eS~~|**Moisture Sensitivity Level (MSL) Classification**<br>~~eS~~|
|---|---|
|CPC1998J<br>~~eS~~|MSL 1<br>~~eS~~|



## **4.2 ESD Sensitivity** 

This product is **ESD Sensitive** , and should be handled according to the industry standard **JESD-625** . 

## **4.3 Soldering Profile** 

Provided in the table below is the Classification Temperature (TC) of this product and the maximum dwell time the body temperature of this device may be (TC - 5)ºC or greater. The classification temperature sets the Maximum Body Temperature allowed for this device during lead-free reflow processes. For through-hole devices, and any other processes, the guidelines of **J-STD-020** must be observed. 

**Device Classification Temperature (TC) Dwell Time (tp) Max Reflow Cycles** CPC1998J 245°C 30 seconds 1 ~~————~~ 

## **NOTE:** The exposed surface of the DCB substrate is not to be soldered. 

## **4.4 Board Wash** 

IXYS Integrated Circuits recommends the use of no-clean flux formulations. Board washing to reduce or remove flux residue following the solder reflow process is acceptable provided proper precautions are taken to prevent damage to the device. These precautions include but are not limited to: using a low pressure wash and providing a follow up bake cycle sufficient to remove any moisture trapped within the device due to the washing process. Due to the variability of the wash parameters used to clean the board, determination of the bake temperature and duration necessary to remove the moisture trapped within the package is the responsibility of the user (assembler). Cleaning or drying methods that employ ultrasonic energy may damage the device and should not be used. Additionally, the device must not be exposed to flux or solvents that are Chlorine- or Fluorine-based. 

## e3 

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**CPC1998** 

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INTEGRATED CIRCUITS DIVISION<br>4.5 Mechanical Dimensions<br>5.029 ± 0.127 1.930 ± 0.381<br>19.914 ± 0.254 (0.198 ± 0.005) 1.181 ± 0.076 (0.076 ± 0.015)<br>(0.784 ± 0.010) (0.047 ± 0.003) 17.221 ± 0.254<br>(0.678 ± 0.010)<br>i [<br>20.879 ± 0.254 15.317 ± 0.254<br>(0.822 ± 0.010) (0.603 ± 0.010)<br>DCB Substrate<br>NOTE:  Not to be soldered<br>2.362 ± 0.381<br>20.396 ± 0.508<br>(0.093 ± 0.015)<br>(0.803 ± 0.020) DIMENSIONS<br>mm<br>(inches)<br>Sen<br>3.810 ± 0.254<br>(0.150 ± 0.010) 0.635 ± 0.076<br>15.240 ± 0.508 (0.025 ± 0.003)<br>(0.600 ± 0.020) 1.270 TYP<br>am | 2.794 ± 0.127 om (0.050 TYP)<br>(0.110 ± 0.005)<br>**----- End of picture text -----**<br>


**NOTE:** Metallized external surface of DCB substrate maintains 2500V isolation to device internal structure and all external pins. rms 

## **For additional information please visit our website at: www.ixysic.com** 

IXYS Integrated Circuits makes no representations or warranties with respect to the accuracy or completeness of the contents of this publication and reserves the right to make changes to specifications and product descriptions at any time without notice. Neither circuit patent licenses nor indemnity are expressed or implied. Except as set forth in IXYS Integrated Circuits’ Standard Terms and Conditions of Sale, IXYS Integrated Circuits assumes no liability whatsoever, and disclaims any express or implied warranty, relating to its products including, but not limited to, the implied warranty of merchantability, fitness for a particular purpose, or infringement of any intellectual property right. 

The products described in this document are not designed, intended, authorized or warranted for use as components in systems intended for surgical implant into the body, or in other applications intended to support or sustain life, or where malfunction of IXYS Integrated Circuits’ product may result in direct physical harm, injury, or death to a person or severe property or environmental damage. IXYS Integrated Circuits reserves the right to discontinue or make changes to its products at any time without notice. 

Specification: DS-CPC1998-R06 ©Copyright 2018, IXYS Integrated Circuits All rights reserved. Printed in USA. 6/29/2018 

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R06 

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