CD214B-B340R

Schottky Rectifier, 40 V, 3 A, Single, DO-214AA (SMB), 2 Pins, 500 mV

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Manufacturer: BOURNS
Product type: Schottky Rectifier Diodes
Repetitive Reverse Voltage Vrrm Max:40V; Forward Current If(AV):3A; Diode Configuration:Single; Diode Case Style:DO-214AA; No. of Pins:2Pins; Forward Voltage VF Max:500mV; Forward Su
SVHC: Lead (04-Feb-2026)
No. of Pins: 2Pins
Product Range: CD214B-B3xR
Qualification: -
Diode Mounting: Surface Mount
Diode Case Style: DO-214AA (SMB)
Diode Configuration: Single
Forward Voltage Max: 500mV
Forward Surge Current: 80A
Average Forward Current: 3A
Operating Temperature Max: 125°C
Repetitive Peak Reverse Voltage: 40V

Delivery and price
Units per pack	5000
Price	0.12 €
Current stock	1000+
Lead time	30 days

Datasheet

## **Features** 

## **Applications** 

## n RoHS compliant* n Switch Mode Power Supplies n Low profile n Portable equipment batteries n Low power loss, high efficiency n High frequency rectification n UL 94V-0 classification n DC/DC Converters n Telecommunications POURNS ~~AA~~ **CD214B-B3xR Series Schottky Barrier Rectifier Chip Diode** 

## ~~**General Information**~~ 

Portable communications, computing and video equipment manufacturers are challenging the semiconductor industry to develop increasingly smaller electronic components. 

Bourns offers Schottky Rectifier Diodes for rectification applications, in a compact chip package compatible with DO-214AA (SMB) size format. The Schottky Rectifier Diodes offer a forward current of 3 A with a choice of repetitive peak reverse voltage of 20 V up to 100 V. 

## ~~**Absolute Maximum Ratings (@ TA = 25 °C Unless Otherwise Noted)**~~ 

|**Parameter**|**Symbol**|**CD214B-**|**CD214B-**|**CD214B-**|**CD214B-**|**Unit**|
|---|---|---|---|---|---|---|
|||**B320R**|**B340R**|**B360R**|**B3100R**||
|Maximum Repetitive Peak Reverse Voltage|VRRM|20|40|60|100|V|
|Maximum Average Forward Current|IF(AV)|3||||A|
|Maximum Peak Forward Surge Current<br>(8.3 ms Single Half Sine-Wave)|IFSM|80||||A|
|Operating Junction Temperature Range|TOPR|-55 to +125||-55 to +150||°C|
|Storage Temperature Range|TSTG|-55 to +150||||°C|



## ~~**Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted)**~~ 

|**Parameter**<br>~~OG~~|**Parameter**<br>~~OG~~|**Symbol**<br>~~OG~~|**Condition or Model**<br>~~OG~~|**Condition or Model**<br>~~OG~~|**Min.**<br>~~OG~~|**Typ.**<br>~~OG~~|**Max.**<br>~~OG~~|**Unit**<br>~~OG~~|
|---|---|---|---|---|---|---|---|---|
|Maximum Instantaneous<br>Forward Voltage<br> (NOTE 1)||VF|IF = 1 A<br>~~7~~|CD214B-B320R<br>CD214B-B340R<br>~~a~~|~~a~~|0.40<br>~~a~~|~~a~~|V<br>~~a~~|
|||||CD214B-B360R<br>~~a~~|~~a~~|0.48<br>~~a~~|~~a~~||
|||||CD214B-B3100R<br>~~a~~<br>~~ee~~|~~a~~<br>~~ee~~|0.58<br>~~a~~<br>~~ee~~|~~a~~<br>~~ee~~||
||||IF = 3 A<br>~~7~~<br>7|CD214B-B320R<br>CD214B-B340R<br>~~a~~<br>~~ee~~<br>~~ee~~|~~a~~<br>~~ee~~<br>~~ee~~|0.48<br>~~a~~<br>~~ee~~<br>~~ee~~|0.50<br>~~a~~<br>~~ee~~<br>~~ee~~||
|||||CD214B-B360R<br>~~ee~~|~~ee~~|0.65<br>~~ee~~|0.70<br>~~ee~~||
|||||CD214B-B3100R<br>~~ee~~<br>~~a~~|~~ee~~<br>~~a~~|0.78<br>~~ee~~<br>~~a~~|0.85<br>~~ee~~<br>~~a~~||
|DC Reverse Current<br>~~Ge~~||IR<br>~~Ge ~~|VR = VRRM<br> ~~GO~~||~~GO~~|0.04<br>~~GO~~|0.50<br>~~GO~~|mA|
|Typical Junction Capacitance<br>~~GG~~||CJ<br>~~GG~~|VR = 4 V, f = 1.0 MHz<br>~~GG~~||~~GG~~|180<br>~~GG~~|~~GG~~|pF<br>~~GG~~|
|Typical<br>Thermal<br>Resistance<br>(NOTE 2)<br>~~ee~~|Junction to<br>Ambient<br>~~ee~~|RθJA|~~**e**~~||~~**e**~~|55<br>~~**e**e~~|~~e~~|°C/W<br>~~e~~|
||Junction to<br>Lead<br>~~ee~~<br>~~a~~|RθJL<br>~~e~~|~~**e**~~<br>~~e~~||~~**e**~~|17<br>~~**e**e~~|~~e~~||



## NOTES: 

(1) Pulse width 300 microsecond, 1 % duty cycle. 

(2) Mounted on PCB with 5.0 x 5.0 mm (0.2 x 0.2 inch) copper pad areas. 

*RoHS Directive 2015/863, Mar 31, 2015 and Annex. Specifications are subject to change without notice. 

The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications. 

## **CD214B-B3xR Series Schottky Barrier Rec ifier Chip Diode3312 - 2 mm SMD Trimming Potentiometer** 

## ~~**Performance Graphs**~~ 

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**----- Start of picture text -----**<br>
Forward Current Derating Curve<br>3.0<br>CD214B-B360R<br>CD214B-B3100R<br>2.0<br>CD214B-B320R<br>CD214B-B340R<br>Resistive or<br>1.0 Inductive Load<br>PCB Mounted on<br>5.0 x 5.0 mm<br>(0.2 x 0.2 inch)<br>Copper Pad Areas<br>0<br>0 50 70 90 110 130 150 170<br>Lead Temperature (°C)<br>(Amps)<br>Average Forward Rectified Current<br>**----- End of picture text -----**<br>


## ~~**Typical Instantaneous Forward Characteristics**~~ 

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**----- Start of picture text -----**<br>
10<br>CD214B-B360R<br>CD214B-B320R<br>CD214B-B340R<br>1 CD214B-B3100R<br>0.1<br>Ta = 25 °C<br>0.01<br>0 0.2 0.4 0.6 0.8 1.0 1.2<br>Instantaneous Forward Voltage (Volts)<br>Typical Junction Capacitance<br>400<br>100<br>TJ = 25 °C<br>f = 1.0 MHz<br>Vsig = 50 mVP-P<br>10<br>0.1 1.0 10 100<br>Reverse Voltage (Volts)<br>Instantaneous Forward Current (A)<br>Junction Capacitance (pF)<br>**----- End of picture text -----**<br>


## ~~**Typical Junction Capacitance**~~ 

## ~~**Max. Peak Forward Surge Current**~~ 

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**----- Start of picture text -----**<br>
100<br>80 8.3 ms<br>Single Half<br>60 Sine-Wave<br>(JEDEC Method)<br>40<br>20<br>0<br>0 10 100<br>Number of Cycles @ 60 Hz<br>(Amps)<br>Peak Forward Surge Current<br>**----- End of picture text -----**<br>


## ~~**Typical Reverse Characteristics**~~ 

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**----- Start of picture text -----**<br>
100<br>10 TJ = 100 °C<br>1<br>0.1<br>0.01<br>TJ = 25 °C<br>0.001<br>0 20 40 60 80 100<br>Percent of Rated Peak Reverse Voltage (%)<br>Instantaneous Reverse Current (mA)<br>**----- End of picture text -----**<br>


Specifications are subject to change without notice. 

The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications. 

## **CD214B-B3xR Series Schottky Barrier R3312 - 2 mm SMD Trimming Potentiometerctifier Chip Diode** 

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Product Dimensions<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
A<br>B C D<br>DIA.<br>E E<br>F<br>Dimension CD214B-B3 Series<br>5.20 ± 0.10<br>A<br>(0.205 ± 0.004)<br>3.60 ± 0.10<br>B<br>(0.142 ± 0.004)<br>3.01 TYP.<br>C<br>(0.119)  [TYP.]<br>0.695 ± 0.015<br>D (Dia.)<br>(0.027 ± 0.001)<br>1.15 ± 0.1<br>E<br>(0.045 ± 0.004)<br>1.10 ± 0.15<br>F<br>(0.043 ± 0.006)<br>MM<br>DIMENSIONS:<br>(INCHES)<br>**----- End of picture text -----**<br>


## ~~**Typical Part Marking**~~ 

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**----- Start of picture text -----**<br>
DATE CODE: DEVICE CODE:<br>    Y = LAST  302   = CD214B-B320R<br>          DIGIT OF  304   = CD214B-B340R<br>          YEAR 306   = CD214B-B360R<br>WW = WEEK  302 310   = CD214B-B3100R<br>          NUMBER YWW<br>**----- End of picture text -----**<br>


**==> picture [255 x 140] intentionally omitted <==**

**----- Start of picture text -----**<br>
Recommended Pad Layout<br>G<br>H<br>I<br>**----- End of picture text -----**<br>


|**Dimension**|**CD214B-B3 Series**|**CD214B-B3 Series**|
|---|---|---|
|G||2.65<br>(0104)MAX.|
|H||.<br>3.00<br>(0.118)MIN.|
|I||6.65<br>(0.262)REF.|
|DIMENSIONS:||MM<br>(INCHES)|



## ~~**Environmental Specifcations**~~ 

Moisture Sensitivity Level ................................................................1 ESD Classification (HBM)............................................................. 3B 

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**----- Start of picture text -----**<br>
How to Order<br>CD 214B - B  3  20  R<br>Common Code<br>CD = Chip Diode<br>Package<br>     214B = SMB/DO-214AA Compatible<br>Model<br>B = Schottky Barrier Series<br>Maximum Average Forward Rectified Current<br>3 = 3 A<br>Maximum Repetitive Peak Reverse Voltage<br>  20 =   20 V<br>  40 =   40 V<br>  60 = 60 V<br>100 = 100 V<br>**----- End of picture text -----**<br>


Specifications are subject to change without notice. 

The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications. 

## **CD214B-B3xR Series Schottky Barrier R3312 - 2 mm SMD Trimming Potentiometerctifier Chip Diode** 

## ~~**Packaging Information**~~ 

The product is dispensed in tape and reel format (see diagram below). 

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**----- Start of picture text -----**<br>
P0<br>P1 E T<br>d Index Hole<br>120 °<br>F D2<br>W<br>B<br>D1 D<br>P A C<br>Trailer Device Leader<br>....... ....... ....... ....... W1<br>End ....... ....... ....... ....... Start MM<br>DIMENSIONS:<br>(INCHES)<br>30 pitches 30 pitches<br>**----- End of picture text -----**<br>


|Direction of Feed|Direction of Feed|Direction of Feed|Direction of Feed|Direction of Feed|
|---|---|---|---|---|
|**Item**|**Symbol**|**CD214B-B3 Series**|||
|Carrier Width|A||3.70 ± 0.10<br>(0.146 ± 0.004)||
|Carrier Length|B||5.40±0.10<br>(0.213 ± 0.004)||
|Carrier Depth|C||1.65±0.10<br>(0.065 ± 0.004)||
|Sprocket Hole|d||1.50 ± 0.10<br>(0.059 ± 0.004)||
|Reel Outside Diameter|D||330 ± 2.0<br>(12.992 ± 0.079)||
|Reel Inner Diameter|D1||<br>|50.0<br>(1.969)MIN.|
|Feed Hole Diameter|D2||13.0±0.50<br>(0.512 ± 0.020)||
|Sprocket Hole Position|E||1.75 ± 0.10<br>(0.069 ± 0.004)||
|Punch Hole Position|F||5.50 ± 0.05<br>(0.217 ± 0.002)||
|Punch Hole Pitch|P||8.00 ± 0.10<br>(0.157 ± 0.004)||
|Sprocket Hole Pitch|P0||4.00 ± 0.10<br>(0.157 ± 0.004)||
|Embossment Center|P1||2.00 ± 0.10<br>(0.079 ± 0.004)||
|Overall Tape Thickness|T||(|0.40<br>0.016)MAX.|
|Tape Width|W||12.00 ± 0.30<br>(0.472 ± 0.012)||
|Reel Width|W1||(|18.7<br>0.736)MAX.|
|Quantity per Reel|--|||5,000|



## **Asia-Pacific:** 

Tel: +886-2 2562-4117 Email: asiacus@bourns.com **Europe:** 

Tel: +36 88 520 390 Email: eurocus@bourns.com 

**The Americas:** Tel: +1-951 781-5500 Email: americus@bourns.com **www.bourns.com** 

Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications. 

01/18

Updated at April 29, 2026

Bourns, Inc. is a globally recognized manufacturer of high-reliability electronic components, headquartered in Riverside, California. Renowned for its engineering excellence, the company delivers critical solutions across a diverse range of demanding markets, including automotive, industrial, consumer electronics, telecommunications, and medical equipment. The Bourns product portfolio is anchored by an industry-leading selection of passive components and circuit protection devices. The brand is particularly dominant in magnetic components, offering thousands of high-performance power inductors, alongside specialized RF and toroidal inductors engineered for optimized power management and signal integrity. Equally prominent is their comprehensive suite of circuit protection solutions. This robust lineup features a vast array of standard and resettable fuses, transient voltage suppressors (including TVS varistors and diodes), and gas discharge tubes (GDTs) designed to rigorously safeguard sensitive electronics against overvoltage and overcurrent faults. Beyond its core passives and protection technologies, Bourns manufactures highly effective EMC and RFI suppression components, such as common mode chokes and power line filters. The company's offering also extends into discrete semiconductors and power management, including Schottky diodes, fast recovery rectifiers, bridge rectifiers, and board-level transformers. This expansive breadth of quality components provides design engineers with a trusted foundation for developing resilient, efficient, and long-lasting electronic systems.

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