C6D04065A

## **C6D04065A** 

## **Silicon Carbide Schottky Diode** 

## _Z-Rec[®]_ Rectifier 

## **Features** 

## **Package** 

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V =       650 V<br>RRM<br>IF (TC=160˚C) =          4 A<br>Qc                 =      16 nC<br>**----- End of picture text -----**<br>


- New 6[th] Generation Technology 

- Low Forward Voltage Drop (VF) 

- Zero Reverse Recovery Current 

- Zero Forward Recovery Voltage 

- Low Leakage Current (Ir) 

- Temperature-Independent Switching Behavior 

- Positive Temperature Coefficient on VF 

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          TO-220-2<br>**----- End of picture text -----**<br>


## **Benefits** 

- Higher System Level Efficiency 

- Increase System Power Density 

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PIN 1<br>CASE<br>PIN 2<br>**----- End of picture text -----**<br>


- Reduction of Heat Sink Requirements 

- Parallel Devices Without Thermal Runaway 

## **Applicationspplicationslications** 

**Applicationspplicationslications Part Number Package Marking** Switch Mode Power Supplies (SMPS) C6D04065A TO-220-2 C6D04065 Server/Telecom Power Supplies ~~Ea~~ Industrial Power Supplies Solar UPS **Maximum Ratings** (TC = 25 ˚C unless otherwise specified)C = 25 ˚C unless otherwise specified) = 25 ˚C unless otherwise specified) **Symbol Parameter Value Unit Test Conditions Note** ~~ee~~ VRRM Repetitive Peak Reverse Voltage 650 V ~~a ee ee ee~~ VDC DC Blocking Voltage 650 V ~~a~~ ~~**ee ee** eeee~~ ~~**ee ee**~~ 18 TC=25˚C IF Continuous Forward Current 9 A TC=125˚C Fig. 3 ~~Pf~~ 4 TC=160˚C ~~e~~ IFRM Repetitive Peak Forward Surge Current ~~e~~ 1912 ~~**e** ee~~ A TTCC=25˚C, t=110˚C, tP = 10 ms, Half Sine Wave P=10 ms, Half Sine Wave ~~eee e~~ IFSM Non-Repetitive Peak Forward Surge Current ~~e~~ 3228 ~~**e** ee~~ A TTCC=25˚C, t=110˚C, tp = 10 ms, Half Sine Wave p = 10 ms, Half Sine Wave ~~eee~~ Fig. 8 ~~e~~ IF,Max Non-Repetitive Peak Forward Surge Current ~~e~~ 290200 ~~**e** ee~~ A TTCC=25˚C, t=110˚C, tP = 10 µs, PulseP = 10 µs, Pulse ~~eee~~ Fig. 8 ~~e~~ Ptot Power Dissipation ~~e~~ 6026 ~~**e** ee~~ W TTCC=25˚C=110˚C ~~eee~~ Fig. 4 -55 to TJ , Tstg Operating Junction and Storage Temperature +175 ˚C ~~ee~~ ~~**e** ee eee~~ 1 Nm M3 Screw TO-220 Mounting Torque 8.8 lbf-in 6-32 Screw ~~ee~~ ~~**e** ee ee~~ 

- Switch Mode Power Supplies (SMPS) 

- Server/Telecom Power Supplies 

- Industrial Power Supplies 

- Solar 

- UPS 

**Maximum Ratings** (TC = 25 ˚C unless otherwise specified)C = 25 ˚C unless otherwise specified) = 25 ˚C unless otherwise specified) 

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## **Electrical Characteristics** 

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Symbol Parameter Typ. Max. Unit Test Conditions Note<br>**----- End of picture text -----**<br>


|**Symbol**|**Parameter**|**Typ.**|**Max.**|**Unit**|**Test Conditions**|**Note**|
|---|---|---|---|---|---|---|
||||||||
|VF|Forward Voltage|1.27<br>1.37|1.50<br>1.60|V|IF= 4 A  TJ=25°C<br>IF= 4 A  TJ=175°C|Fig. 1|
|IR|Reverse Current|2<br>12|20<br>80|μA|VR= 650 V  TJ=25°C<br>VR= 650 V  TJ=175°C|Fig. 2|
|QC|Total Capacitive Charge|16||nC|VR= 400 V, IF= 4 A<br>TJ= 25°C|Fig. 5|
|C|Total Capacitance|256<br>32<br>27||pF|VR= 0 V, TJ= 25°C, f = 1 MHz<br>VR= 200 V, TJ= 25˚C, f = 1 MHz<br>VR= 400 V, TJ= 25˚C, f = 1 MHz|Fig. 6|
|EC|Capacitance Stored Energy|2.6||μJ|VR= 400 V|Fig. 7|



Note: This is a majority carrier diode, so there is no reverse recovery charge. 

## **Thermal Characteristics** 

|**Symbol**|**Parameter**|**Typ.**|**Unit**|**Note**|
|---|---|---|---|---|
|RθJC|Thermal Resistance from Junction to Case|2.5|°C/W|Fig. 9|



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Typical Performance<br>12 100<br>TJ = -55°C<br>10 TJ = 25°C 80<br>TJ = 75°C<br>TJ = 125°C<br>8 TJ = 175°C<br>60 TJ = 175 °C<br>6<br>TJ = 125 °C<br>40<br>TJ = 75 °C<br>4<br>TJ = 25 °C<br>20<br>2 TJ = -55 °C<br>0<br>0<br>0.5 1.0 1.5 2.0 2.5<br>0 100 200 300 400 500 600 700 800<br>Foward Voltage, V VVVFFVF (V) (V) (V)F (V) F (V) Reverse Voltage, V VVRRR (V) (V) R (V)<br> (uA)<br> (A)F RR<br>A)<br>A) m A)<br> (A) (A) (A) (A)IIIIFFFFF  ( (II m  (I m RRR<br>Foward Current, I Reverse Leakage Current, I<br>**----- End of picture text -----**<br>


Figure 1. Forward Characteristics 

Figure 2. Reverse Characteristics 

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Typical Performance<br>60 70<br>10% Duty<br>20% Duty 60<br>50 30% Duty<br>50% Duty<br>70% Duty 50<br>40 DC<br>40<br>30<br>30<br>20<br>20<br>10<br>10<br>0 0<br>25 50 75 100 125 150 175 25 50 75 100 125 150 175<br>T T TTTC C CCC ˚C  (°C)  ˚C ˚C ˚C TTT T CCCC C  ˚C ˚C  (°C)  ˚C<br>Figure 3. Current Derating Figure 4. Power Derating<br>25 300<br>Conditions: Conditions:<br>TJ = 25 °C TJ = 25 °C<br>250 Ftest = 1 MHz<br>20<br>Vtest = 25 mV<br>200<br>15<br>150<br>10<br>100<br>5<br>50<br>0 0<br>0 100 200 300 400 500 600 700 0 1 10 100 1000<br>Reverse Voltage, V VVVVVRRRR (V) (V) (V)R (V) (V) R (V) Reverse Voltage, V VVVVRR (V)RR (V) (V) (V) R (V)<br> (A) (A)<br> (A)  (A)IF  (W) (W)  (W) TotTotTotTot<br>IIIF(peak)F(peak)F(peak)F(peak) PP PTOT<br> (W)<br>Tot<br>P<br> (nC)<br>C<br> (nC) (nC)Q (nC)Q (nC)Q (nC)QC (pF)CCCCC C (pF)C (pF)C (pF)<br>Q<br>Capacitance (pF)<br>Capacitive Charge, Q<br>**----- End of picture text -----**<br>


Figure 5. Total Capacitance Charge vs. Reverse Voltage 

Figure 6. Capacitance vs. Reverse Voltage 

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Typical Performance<br>712 1,00012<br>6<br>10 10<br>TJ_initial = 25 °C<br>5 TJ_initial = 110 °C<br>8 8<br>4<br>100<br>6 6<br>3<br>4 4<br>2<br>2 2<br>1<br>10<br>00 0<br>10E-6 100E-6 1E-3 10E-3<br>00 10100 20200 300300 400400 500500 6000 700 0 100 200 300 400 500 600 700<br>Reverse Voltage, VReverse Voltage, V VR (V) RR (V) (V) Reverse Voltage, VTime, t tp (s) p (s) R (V)<br>Figure 7. Capacitance Stored Energy Figure 8. Non-repetitive peak forward surge current<br>versus pulse duration (sinusoidal waveform)<br>0.5<br> 1<br>0.3<br>0.1<br>0.05<br>100E-3 0.02<br>0.01<br>SinglePulse<br>10E-3<br>1E-6 10E-6 100E-6 1E-3 10E-3 100E-3  1<br>Time, t T (Sec)T (Sec)T (Sec)T (Sec)T (Sec) p (s)<br>Figure 9. Transient Thermal Impedance<br>J) J)<br>m m<br> (  (<br>C C<br>J) m  (A)  (A)<br>( J)<br>d  EC ( m C I I FSM FSM<br>E<br>Capacitance Stored Energy, E Capacitance Stored Energy, E<br>C/W)<br>o<br> (<br>thJC<br>Thermal Resistance (˚C/W)<br>Thermal Resistance (˚C/W)Thermal Resistance (˚C/W)Thermal Resistance (˚C/W)Thermal Resistance (˚C/W)<br>Junction To Case Impedance, Z<br>**----- End of picture text -----**<br>


C6D04065A, Rev. -, 10-2019 

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» [[4]]<br>Package Dimensionsge Dimensionse Dimensions<br>Package TO-220-2<br>| ;<br>_<br>**----- End of picture text -----**<br>


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||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|»|[[4]]|
|Package Dimensionsge Dimensionse Dimensions|
|Package TO-220-2|
|||;|||POS|Min|Inches|Max|MinMillimetersMax|
|A|.381|.410|9.677|10.414|
|_|fr|eeesee|ee|ee|ee|
|TD|B|.235|.255|5.969|6.477|
|||ee|ee|ee|ee|
|C|.100|.120|2.540|3.048|
|:|
|fe|D|.223|.337|5.664|8.560|
|||||ee|ee|||
|D1|.457-.490|11.60-12.45 typ|
|||||es|D2|.277-.303 typ|ee||7.04-7.70 typ|ee|
|D3|.244-.252 typ|6.22-6.4 typ|
|Ion|—-})|._—_|||||||||es|E1E|.590.302|ee|.615.326|ee|14.9867.68|ee|15.6218.28|
|ee|ee|ee|ee|ee|
|E2|.227|251|5.77|6.37|
|rs|ee|ee|ee|ee|
|||F|.143|.153|3.632|3.886|
|||W|||G|1.105|1.147|28.067|29.134|
|7|H|.500|.550|12.700|13.970|
|es|es|ee|ee|ee|
|L|.025|.036|.635|.914|
|es|ee|ee|ee|ee|
|.|M|.045|.055|1.143|1.550|
|ee|ee|ee|ee|
|N|.195|.205|4.953|5.207|
|A|pee|o¥|es|es|ee|ee|ee|
|||hy|4Hh|i;|QP|.048.165|.054.185|1.2194.191|1.3724.699|
|ee|ee|ee|es|
|S|3°|6°|3°|6°|
|Po|ana|an|es|ee|ee|ee|ee|
|T|3°|6°|3°|6°|
|L—|__|i|U|3°|6°|3°|6°|
|V|.094|.110|2.388|2.794|
|PIN 1|W|.014|.025|.356|.635|
|CASE|X|3°|5.5°|3°|5.5°|
|ee|ee|ee|
|PIN 2|Y|.385|.410|9.779|10.414|
|||Lo|
|z|.130|.150|3.302|3.810|
|ee|ee|ee|ee|ee|
|View A-A|NOTE:|
|1.|Dimension L, M, W apply for Solder Dip Finish|

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## **Recommended Solder Pad Layout** 

## TO-220-2 

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||||
|---|---|---|
|Part Number|Package|Marking|
|C6D04065A|TO-220-2|C6D04065|

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**Note: Recommended soldering profiles can be found in the applications note here:** http://www.wolfspeed.com/power_app_notes/soldering 

C6D04065A, Rev. -, 10-2019 

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## **Notes** 

- **RoHS Compliance** 

   - The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Wolfpseed representative or from the Product Ecology section of our website at http://www.wolfspeed.com/Power/Tools-and-Support/Product-Ecology. 

## **• REACh Compliance** 

REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. 

- This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control systems. 

## **Related Links** 

- Cree SiC Schottky diode portfolio: http://www.wolfspeed.com/Power/Products#SiCSchottkyDiodes 

- Schottky diode Spice models: http://www.wolfspeed.com/power/tools-and-support/DIODE-model-request2 

- SiC MOSFET and diode reference designs: http://go.pardot.com/l/101562/2015-07-31/349i 

Copyright © 2019 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. 

Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.cree.com/power 

C6D04065A, Rev. -, 10-2019 

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