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C4D30120D
Silicon Carbide Schottky Diode, Z-Rec 1200V Series, Dual Common Cathode, 1.2 kV, 88 A, 155 nC
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- Manufacturer: WOLFSPEED
- Product type: Silicon Carbide Schottky Diodes
- Product Range:Z-Rec 1200V Series; Diode Configuration:Dual Common Cathode; Repetitive Reverse Voltage Vrrm Max:1.2kV; Continuous Forward Current If:88A; Total Capacitive Charge Qc
- SVHC: No SVHC (17-Dec-2014)
- No. of Pins: 3 Pin
- Product Range: Z-Rec 1200V
- Qualification: -
- Diode Mounting: Through Hole
- Diode Case Style: TO-247
- Diode Configuration: Dual Common Cathode
- Average Forward Current: 88A
- Total Capacitive Charge: 155nC
- Operating Temperature Max: 175°C
- Repetitive Peak Reverse Voltage: 1.2kV
| Delivery and price | |
|---|---|
| Units per pack | 250 |
| Price | 11.24 € |
| Current stock | 200+ |
| Lead time | 30 days |
Datasheet
## **C4D30120D Silicon Carbide Schottky Diode** _Z-Rec[®]_ Rectifier ## **Features** ## **Package** **V** = 1200 V **RRM IF (TC=135˚C)** = 43A[**] **Qc** = 155nC[**] - 1.2kV Schottky Rectifier - Zero Reverse Recovery Current - High-Frequency Operation - Temperature-Independent Switching - Extremely Fast Switching ## **Benefits** TO-247-3 - Replace Bipolar with Unipolar Rectifiers - Essentially No Switching Losses - Higher Efficiency - Reduction of Heat Sink Requirements - Parallel Devices Without Thermal Runaway ## **Applications** - Switch Mode Power Supplies (SMPS) - Boost diodes in PFC or DC/DC stages - Free Wheeling Diodes in Inverter stages **Part Number Package Marking** C4D30120D TO-247-3 C4D30120 - AC/DC converters **Maximum Ratings** (TC=25°C unless otherwise specified) |**Symbol**<br>~~ee~~<br>~~a~~<br>~~a~~|**Parameter**<br>~~ee~~<br>|**Value**<br>~~ee~~<br>~~ee~~<br><br>~~ee~~|**Unit**<br>~~ee~~<br><br>~~ee~~|**Test Conditions**<br>~~ee~~<br>~~ee~~<br><br>~~ee~~|**Note**<br>~~ee~~<br>~~ee~~<br><br>~~ee~~| |---|---|---|---|---|---| |VRRM<br>~~a ee~~<br>~~a~~<br>~~a~~|Repetitive Peak Reverse Voltage<br>~~ee~~<br>~~ee~~<br>|1200<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>|V<br>~~ee~~<br>~~ee~~<br>ee<br>|~~ee~~<br>~~ee~~<br>~~ee~~<br>~~es ee~~<br>|~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>| |VRSM<br>~~a~~<br>~~a~~|Surge Peak Reverse Voltage<br>~~ee~~<br>|1300<br>~~ee ~~<br>~~ee~~<br>|V<br> ~~ee~~<br>ee<br>|~~ee ~~<br>~~es ee~~<br>|~~ee~~<br>~~ee~~<br>| |VR<br>~~a~~|DC Peak Reverse Voltage<br>~~ee~~<br>|1200<br>~~ee~~<br>|V<br>ee<br>|~~es ee~~<br>|~~ee~~<br>| |IF<br>~~a~~<br>~~a~~|Continuous Forward Current<br>(Per Leg/Device)<br>~~ee ~~<br><br>|44/88<br>21.5/43<br>15/30<br> ~~ee~~ <br><br>~~ee~~<br>|A<br> ee<br><br>~~**e**e~~<br>|TC=25˚C<br>TC=135˚C<br>TC=152˚C<br>~~es ee~~<br><br>~~ee~~|Fig. 3<br>~~ee~~<br><br>~~ee~~| |IFRM<br>~~a~~<br>~~a~~<br>~~a~~|Repetitive Peak Forward Surge Current<br>~~ee~~<br><br>|68*<br>44*<br>~~ee~~<br>~~ee~~<br><br>~~ee~~<br>|A<br>~~ee~~<br>~~**e**e~~<br><br>~~**e**e~~<br>|TC=25˚C, tP=10 ms, Half Sine Pulse<br>TC=110˚C, tP=10 ms, Half Sine Pulse<br>~~ee~~<br>~~ee~~<br>~~ee~~|~~ee~~<br>~~ee~~<br>~~ee~~| |IFSM<br>~~a~~<br>~~a~~<br>~~a~~|Non-Repetitive Forward Surge Current<br>~~e~~<br><br>|100*<br>85*<br>~~ee~~ <br>~~e~~<br>~~ee~~<br><br>~~ee~~<br>|A<br> ~~**e**e~~<br>~~e~~<br>~~**e**e~~<br><br>~~**e**e~~<br>|TC=25˚C, tP=10 ms, Half Sine Pulse<br>TC=110˚C, tP=10 ms, Half Sine Pulse<br>~~ee ~~<br>~~ee~~<br>~~ee~~|Fig. 8<br> ~~ee~~<br>~~ee~~<br>~~ee~~| |IF,Max<br>~~a~~<br>~~a~~<br>~~a~~|Non-Repetitive Peak Forward Current<br>~~e~~<br><br>|900*<br>750*<br>~~ee~~ <br>~~e~~<br>~~ee~~<br><br>~~ee~~<br>|A<br> ~~**e**e~~<br>~~e~~<br>~~**e**e~~<br><br>~~**e**e~~<br>|TC=25˚C, tP=10ms, Pulse<br>TC=110˚C, tP=10ms, Pulse<br>~~ee ~~<br>~~ee~~<br>~~ee~~|Fig. 8<br> ~~ee~~<br>~~ee~~<br>~~ee~~| |Ptot<br>~~a~~<br>~~a~~<br>~~a~~|Power Dissipation (Per Leg/Device)<br>~~e~~<br><br>|220/440<br>95/190<br>~~ee~~ <br>~~e~~<br>~~ee~~<br><br>~~ee~~<br>|W<br> ~~**e**e~~<br>~~e~~<br>~~**e**e~~<br><br>~~**e**e~~<br>|TC=25˚C<br>TC=110˚C<br>~~ee ~~<br>~~ee~~<br>~~ee~~|Fig. 4<br> ~~ee~~<br>~~ee~~<br>~~ee~~| |dV/dt<br>~~a~~<br>~~a~~<br>~~a~~|Diode dV/dt ruggedness<br>~~e~~<br><br>|200<br>~~ee~~ <br>~~e~~<br>~~ee~~<br><br>~~ee~~<br>|V/ns<br> ~~**e**e~~<br>~~e~~<br>~~**e**e~~<br><br>~~**e**e~~<br>|VR=0-960V<br>~~ee ~~<br>~~ee~~<br>~~ee~~|~~ee~~<br>~~ee~~<br>~~ee~~| |∫i2dt<br>~~a~~<br>~~a~~<br>~~a~~|i2t value<br>~~e~~<br><br>|50*<br>36*<br>~~ee~~ <br>~~e~~<br>~~ee~~<br><br>~~ee~~<br>|A2s<br> ~~**e**e~~<br>~~e~~<br>~~**e**e~~<br><br>~~**e**e~~<br>|TC=25˚C, tP=10 ms<br>TC=110˚C, tP=10 ms<br>~~ee ~~<br>~~ee~~<br>~~ee~~|~~ee~~<br>~~ee~~<br>~~ee~~| |TJ<br>~~a e~~<br>~~a~~<br>~~a~~|Operating Junction Range<br>~~e~~<br><br>|-55 to<br>+175<br>~~ee~~ <br>~~e~~<br>~~ee~~<br><br>~~ee~~<br>|˚C<br> ~~**e**e~~<br>~~e~~<br>~~**e**e~~<br><br>~~**e**e~~<br>|~~ee ~~<br>~~ee~~<br>~~**ee**~~|~~ee~~<br>~~ee~~<br>~~**ee**~~| |Tstg<br>~~a e~~<br>~~a~~|Storage Temperature Range<br>~~e~~<br>|-55 to<br>+135<br>~~ee ~~<br>~~e~~<br>~~ee~~<br><br>~~ee~~|˚C<br> ~~**e**e~~<br>~~e~~<br>~~**e**e~~<br><br>~~ee~~|~~ee ~~<br>~~**ee**~~|~~ee~~<br>~~**ee**~~| |~~a e~~|TO-247 Mounting Torque<br>~~e~~|1<br>8.8<br>~~ee~~ <br>~~e~~<br>~~ee~~|Nm<br>lbf-in<br> ~~**e**e~~<br>~~e~~<br>~~ee~~|M3 Screw<br>6-32 Screw<br>~~**ee** ~~|~~**ee**~~| C4D30120D Rev. E, 09-2016 **1** ## **Electrical Characteristics (Per Leg)** **==> picture [542 x 25] intentionally omitted <==** **----- Start of picture text -----**<br> Symbol Parameter Typ. Max. Unit Test Conditions Note<br>**----- End of picture text -----**<br> |**Symbol**|**Parameter**|**Typ.**|**Max.**|**Unit**|**Test Conditions**|**Note**| |---|---|---|---|---|---|---| |VF|Forward Voltage|1.6<br>2.3|1.8<br>3|V|IF= 15 A TJ=25°C<br>IF= 15 A TJ=175°C|Fig. 1| |IR|Reverse Current|35<br>120|200<br>300|μA|VR= 1200 V TJ=25°C<br>VR= 1200 V TJ=175°C|Fig. 2| |QC|Total Capacitive Charge|77.5||nC|VR= 800 V, IF= 15A<br>d_i_/d_t_= 200 A/μs<br>TJ= 25°C|Fig. 5| |C|Total Capacitance|1200<br>70<br>50||pF|VR= 0 V, TJ= 25°C, f = 1 MHz<br>VR= 400 V, TJ= 25˚C, f = 1 MHz<br>VR= 800 V, TJ= 25˚C, f = 1 MHz|Fig. 6| |EC|Capacitance Stored Energy|22.1||μJ|VR= 800 V|Fig. 7| Note:This is a majority carrier diode, so there is no reverse recovery charge. ## **Thermal Characteristics** |**Symbol**|**Parameter**|**Typ.**|**Unit**|**Note**| |---|---|---|---|---| |RθJC|Thermal Resistance from Junction to Case|0.34**<br>0.68*|°C/W|Fig. 9| ** ** Per Device, * Per Leg ## **Typical Performance (Per Leg)** **==> picture [541 x 289] intentionally omitted <==** **----- Start of picture text -----**<br> 30 2<br>[T] J [=-55°C] 1.8<br>[T] J [= 25°C]<br>25 T TJJ= 75°C =125°C 1.6<br>TJ =175°C<br>1.4<br>20<br>1.2<br>15 1<br>0.8<br>[T] J [=-55°C]<br>10 [T] J [= 25°C]<br>0.6 TJ= 75°C<br> TJ =125°C<br>0.4 TJ =175°C<br>5<br>0.2<br>0 0<br>0 0.5 1 1.5 2 2.5 3 3.5 4 200 400 600 800 1000 1200 1400 1600 1800<br>VF (V) VR (V)<br> (A)<br>F (mA)<br>I R<br>I<br>**----- End of picture text -----**<br> Figure 1. Forward Characteristics Figure 2. Reverse Characteristics **==> picture [176 x 44] intentionally omitted <==** C4D30120D Rev. E, 09-2016 **2** ## **Typical Performance (Per Leg)** **==> picture [261 x 288] intentionally omitted <==** **----- Start of picture text -----**<br> 160<br>140<br>120 [10% Duty]<br> 20% Duty<br> 30% Duty<br> 50% Duty<br>100 70% Duty<br> DC<br>80<br>60<br>40<br>20<br>0<br>25 50 75 100 125 150 175<br>T ˚C<br>C<br> (A)<br>F(peak)<br>I<br>**----- End of picture text -----**<br> **==> picture [262 x 288] intentionally omitted <==** **----- Start of picture text -----**<br> 240<br>220<br>200<br>180<br>160<br>140<br>120<br>100<br>80<br>60<br>40<br>20<br>0<br>25 50 75 100 125 150 175<br>T ˚C<br>C<br> (W)<br>Tot<br>P<br>**----- End of picture text -----**<br> Figure 3. Current Derating Figure 4. Power Derating **==> picture [540 x 288] intentionally omitted <==** **----- Start of picture text -----**<br> 90 1400<br>80<br>1200<br>70<br>1000<br>60<br>50 800<br>40<br>600<br>30<br>400<br>20<br>200<br>10<br>0 0<br>0 200 400 600 800 1000 0.1 1 10 100 1000<br>VR (V) VR (V)<br> (nC)<br>c<br>Q C (pF)<br>**----- End of picture text -----**<br> Figure 5. Recovery Charge vs. Reverse Voltage Figure 6. Capacitance vs. Reverse Voltage **==> picture [176 x 44] intentionally omitted <==** **3** C4D30120D Rev. E, 09-2016 ## **Typical Performance** **==> picture [541 x 288] intentionally omitted <==** **----- Start of picture text -----**<br> 40.040 1000 1000<br>35.035<br>30.030<br>25.025<br>[T] J [= 25°C]<br>20.020 100 100 TJ = 110°C<br>15.015<br>10.010<br>5.05<br>0.00 10 10<br> 0 200 400 600 800 10000 200 400 600 800 1000 1E-05 1E-04 1E-03 1E-02 1.E-05 1.E-04 1.E-03 1.E-02<br>VR Reverse Voltage (V)<br>VR (V) tp (s) tp(s)<br>J) (A)<br>m<br>(<br>EC I (A) FSM FSM<br>apacitive Energy (uJ) I<br>C<br>C<br>E<br>**----- End of picture text -----**<br> Figure 7. Typical Capacitance Stored Energy, per leg Figure 8. Non-Repetitive Peak Forward Surge Current versus Pulse Duration (sinusoidal waveform), per leg **==> picture [392 x 270] intentionally omitted <==** **----- Start of picture text -----**<br> 0.5<br>100E-3<br>0.3<br>0.1<br>0.05<br>10E-3<br>0.02<br>0.01 SinglePulse<br>1E-3<br>100E-6<br>1E-6 10E-6 100E-6 1E-3 10E-3 100E-3 1<br>Time, t T (Sec) p (s)<br>C/W)<br>o<br> (<br>thJC<br>Case Impedance, Z<br>Thermal Resistance (˚C/W)<br>Junction To<br>**----- End of picture text -----**<br> Figure 9. Device Transient Thermal Impedance **==> picture [176 x 44] intentionally omitted <==** C4D30120D Rev. E, 09-2016 **4** ## **Package Dimensions** **==> picture [85 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> Package TO-247-3<br>**----- End of picture text -----**<br> **==> picture [400 x 359] intentionally omitted <==** **----- Start of picture text -----**<br> |||||||||| |---|---|---|---|---|---|---|---|---| |Inches|Millimeters| |POS| |Min|Max|Min|Max| |Pp—| |A|.190|.205|4.83|5.21| |—| |A1|.090|.100|2.29|2.54| |A2|.075|.085|1.91|2.16| |oeSS| |b|.042|.052|1.07|1.33| |b1|.075|.095|1.91|2.41| |b3|.113|.133|2.87|3.38| |©)|P||Coe|c|.022|=p|.027|0.55|0.68| |D|.819|.831|20.80|21.10| |D1|.640|.695|16.25|17.65| |D2|.037|.049|0.95|1.25| |E|.620|.635|15.75|16.13| |i|—| |E1|.516|.557|13.10|14.15| |>| |E2|.145|.201|3.68|5.10| |—| |E3|.039|.075|1.00|1.90| |—| |E4|.487|.529|12.38|13.43| |FF| |e|e|.214 BSC|5.44 BSC| |——| |a|L|.780|.800|19.81|20.32| |L1|.161|.173|4.10|4.40| |N|3| |ØP|.138|.144|3.51|3.65| |—| |—|Q|.216|.236|5.49|6.00| |S|.238|.248|6.04|6.30| |rr| |T|17.5° REF| |W|3.5° REF| |—| |X|4° REF| **----- End of picture text -----**<br> ## **Recommended Solder Pad Layout** **==> picture [231 x 32] intentionally omitted <==** **----- Start of picture text -----**<br> |||| |---|---|---| |Part Number|Package|Marking| |C4D30120D|TO-247-3|C4D30120| **----- End of picture text -----**<br> **==> picture [57 x 5] intentionally omitted <==** **----- Start of picture text -----**<br> all units are in inches<br>**----- End of picture text -----**<br> TO-247-3 **Note: Recommended soldering profiles can be found in the applications note here:** http://www.wolfspeed.com/power_app_notes/soldering C4D30120D Rev. E, 09-2016 **5** ## **Diode Model** **==> picture [386 x 152] intentionally omitted <==** **----- Start of picture text -----**<br> VfT = VT + If * RT<br>VT = 0.97 + (Tj * -2.12*10 [-3] )<br>RT = 0.031 + (Tj * 3.92*10 [-4] )<br>Note: Tj = Diode Junction Temperature In Degrees Celsius,<br>VT RT valid from 25°C to 175°C<br>**----- End of picture text -----**<br> ## **Notes** - **RoHS Compliance** - The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Wolfspeed representative or from the Product Ecology section of our website at http:// www.wolfspeed.com/power/tools-and-support/product-ecology. - **REACh Compliance** REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. - This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control systems. ## **Related Links** - Cree SiC Schottky diode portfolio: http://www.wolfspeed.com/Power/Products#SiCSchottkyDiodes - Schottky diode Spice models: http://www.wolfspeed.com/power/tools-and-support/DIODE-model-request2 - SiC MOSFET and diode reference designs: http://go.pardot.com/l/101562/2015-07-31/349i Copyright © 2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.cree.com/power C4D30120D Rev. E, 09-2016 **6**
Updated at April 29, 2026
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