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C4D20120D
Silicon Carbide Schottky Diode, Z-Rec 1200V Series, Dual Common Cathode, 1.2 kV, 68 A, 104 nC
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- Manufacturer: WOLFSPEED
- Product type: Silicon Carbide Schottky Diodes
- Product Range:Z-Rec 1200V Series; Diode Configuration:Dual Common Cathode; Repetitive Reverse Voltage Vrrm Max:1.2kV; Continuous Forward Current If:68A; Total Capacitive Charge Q
- SVHC: No SVHC (17-Dec-2014)
- No. of Pins: 3 Pin
- Product Range: Z-Rec 1200V
- Qualification: -
- Diode Mounting: Through Hole
- Diode Case Style: TO-247
- Diode Configuration: Dual Common Cathode
- Average Forward Current: 68A
- Total Capacitive Charge: 104nC
- Operating Temperature Max: 175°C
- Repetitive Peak Reverse Voltage: 1.2kV
| Delivery and price | |
|---|---|
| Units per pack | 250 |
| Price | 7.4 € |
| Current stock | 500+ |
| Lead time | 30 days |
Datasheet
## **C4D20120D Silicon Carbide Schottky Diode** _Z-Rec[®]_ Rectifier ## **Features** ## **Package** **V** = 1200 V **RRM IF (TC=135˚C)** = 33 A[**] **Qc** = 104 nC[**] - 1.2-KVolt Schottky Rectifier - Zero Reverse Recovery Current - High-Frequency Operation - Temperature-Independent Switching Behavior - • Positive Temperature Coefficient on VF ## **Benefits** TO-247-3 - Replace Bipolar with Unipolar Rectifiers - Essentially No Switching Losses - Higher Efficiency - Reduction of Heat Sink Requirements - Parallel Devices Without Thermal Runaway ## **Applications** - Switch Mode Power Supplies (SMPS) - Boost diodes in PFC or DC/DC stages - Free Wheeling Diodes in Inverter stages |PIN 1<br>PIN 2<br>PINoo|CASE<br>oo|| |---|---|---| |**Part Number**|**Package**|**Marking**| |C4D20120D|TO-247-3|C4D20120| - AC/DC converters ## **Maximum Ratings** (TC=25°C unless otherwise specified) |**Maximum Ratings**<br>~~a~~|**Maximum Ratingsgs**(TC=25°C unless otherwise specified)TC=25°C unless otherwise specified)C=25°C unless otherwise specified)=25°C unless otherwise specified)<br>~~ns~~|(TC=25°C unless otherwise specified)TC=25°C unless otherwise specified)C=25°C unless otherwise specified)=25°C unless otherwise specified)pecified)ecified))<br>~~Od~~|(TC=25°C unless otherwise specified)TC=25°C unless otherwise specified)C=25°C unless otherwise specified)=25°C unless otherwise specified)pecified)ecified))<br>~~nn~~||| |---|---|---|---|---|---| |**Symbol**<br>~~a~~<br>~~a~~|**Parameter**<br>~~ns~~<br>|**Value**<br>~~Od~~<br>~~ee~~<br>|**Unit**<br>~~nn~~<br>~~es~~<br>|**Test Conditions**<br>|**Note**<br>| |VRRM<br>~~a~~<br>~~a ee~~<br>~~a~~|Repetitive Peak Reverse Voltage<br>~~ns ~~<br>~~ee~~<br>|1200<br> ~~Od ~~<br>~~ee~~<br>~~ee~~<br><br>~~ee~~|V<br> ~~nn~~<br>~~ee~~<br>~~es~~<br><br>~~es~~|~~ee~~<br><br>~~ee~~|~~ee~~<br>| |VRSM<br>~~a ee~~|Surge Peak Reverse Voltage<br>~~ee~~|1300<br>~~ee ~~<br>~~ee~~<br>~~ee~~|V<br> ~~es~~<br>~~ee~~<br>~~es~~|~~ee~~<br>~~ee~~|~~ee~~| |VDC|DC Blocking Voltage|1200<br>~~ee~~|V<br>~~es~~|~~ee~~|| |IF<br>~~a~~|Continuous Forward Current<br>(Per Leg/Device)<br>|34/68<br>16.5/33<br>10/20<br>~~ee~~<br>|A<br>~~es~~<br>|TC=25˚C<br>TC=135˚C<br>TC=157˚C<br>|Fig. 3<br>| |IFRM<br>~~a ee~~<br>~~a~~<br>~~a~~|Repetitive Peak Forward Surge Current<br>~~ee~~<br><br>|47*<br>31.5*<br>~~ee~~<br>~~ee~~<br><br>~~ee~~<br>|A<br>~~ee~~<br>~~es~~<br><br>~~es~~<br>|TC=25˚C, tP=10 ms, Half Sine Pulse<br>TC-110˚C, tP=10 ms, Half Sine Pulse<br>~~ee~~<br><br>|~~ee~~<br><br>| |IFSM<br>~~a ee~~<br>~~a~~<br>~~a~~|Non-Repetitive Peak Forward Surge Current<br>~~ee~~<br>|71*<br>59.5*<br>~~ee ~~<br>~~ee~~<br>~~ee~~<br><br>~~ee~~|A<br> ~~es~~<br>~~ee~~<br>~~es~~<br><br>~~es~~|TC=25˚C, tP=10 ms, Half Sine Pulse<br>TC=110˚C, tP=10 ms, Half Sine Pulse<br>~~ee~~<br>|Fig. 8<br>~~ee~~<br>| |IF,Max<br>~~a ee~~<br>~~a~~<br>~~a~~|Non-Repetitive Peak Forward Current<br>~~ee~~<br>~~es~~<br>|750*<br>620*<br>~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>|A<br> ~~es~~<br>~~ee~~<br>~~es~~<br>~~**e**s~~<br>|TC=25˚C, tP=10ms, Pulse<br>TC=110˚C, tP=10ms, Pulse<br>~~ee~~|Fig. 8<br>~~ee~~| |Ptot<br>~~a~~<br>~~a~~|Power Dissipation(Per Leg/Device)<br>~~es~~<br>|176/352<br>76/152<br>~~ee ~~<br>~~ee~~<br>|W<br> ~~es~~<br>~~**e**s~~<br>|TC=25˚C<br>TC=110˚C|Fig. 4| |dV/dt<br>~~a~~<br>~~a~~|Diode dV/dt ruggedness<br>~~es~~ <br>~~e~~<br>|200<br> ~~ee~~ <br>~~e~~<br>~~ee~~<br>|V/ns<br> ~~**e**s~~<br>~~e~~<br>~~**e**e~~<br>|VR=0-960V|| |∫i2dt<br>~~a ee~~<br>~~a~~<br>~~a~~|i2t value<br>~~ee~~<br><br>|25*<br>17.5*<br>~~ee~~<br>~~ee~~<br><br>~~ee~~<br>|A2s<br>~~ee~~<br>~~**e**e~~<br><br>~~**e**e~~<br>|TC=25˚C, tP=10 ms<br>TC=110˚C, tP=10 ms<br>~~ee~~|~~ee~~| |TJ<br>~~a e~~<br>~~a~~<br>~~a~~|Operating Junction Range<br>~~e~~<br><br>|-55 to<br>+175<br>~~ee ~~<br>~~e~~<br>~~ee~~<br><br>~~ee~~<br>|˚C<br> ~~**e**e~~<br>~~e~~<br>~~**e**e~~<br><br>~~**e**e~~<br>||| |Tstg<br>~~a e~~<br>~~a~~|Storage Temperature Range<br>~~e~~<br>|-55 to<br>+135<br>~~ee ~~<br>~~e~~<br>~~ee~~<br><br>~~ee~~|˚C<br> ~~**e**e~~<br>~~e~~<br>~~**e**e~~<br><br>~~en~~||| |~~a e~~|TO-247 Mounting Torque<br>~~e~~|1<br>8.8<br>~~ee ~~<br>~~e~~<br>~~ee~~|Nm<br>lbf-in<br> ~~**e**e~~<br>~~e~~<br>~~en~~|M3 Screw<br>6-32 Screw|| * Per Leg, ** Per Device C4D20120D Rev. F, 09-2016 **1** ## **Electrical Characteristics (Per Leg)** **==> picture [542 x 26] intentionally omitted <==** **----- Start of picture text -----**<br> Symbol Parameter Typ. Max. Unit Test Conditions Note<br>**----- End of picture text -----**<br> |**Symbol**|**Parameter**|**Typ.**|**Max.**|**Unit**|**Test Conditions**|**Note**| |---|---|---|---|---|---|---| |VF|Forward Voltage|1.5<br>2.2|1.8<br>3|V|IF= 10 A TJ=25°C<br>IF= 10 A TJ=175°C|Fig. 1| |IR|Reverse Current|30<br>55|250<br>350|μA|VR= 1200 V TJ=25°C<br>VR= 1200 V TJ=175°C|Fig. 2| ||||||VR= 800 V, IF= 10A|| |QC|Total Capacitive Charge|52||nC|d_i_/d_t_= 200 A/μs|Fig. 5| ||||||TJ= 25°C|| |C|Total Capacitance|754<br>45<br>38||pF|VR= 0 V, TJ= 25°C, f = 1 MHz<br>VR= 400 V, TJ= 25˚C, f = 1 MHz<br>VR= 800 V, TJ= 25˚C, f = 1 MHz|Fig. 6| |EC|Capacitance Stored Energy|14.5||μJ|VR= 800 V|Fig. 7| Note: This is a majority carrier diode, so there is no reverse recovery charge. ## **Thermal Characteristics** |**Symbol**|**Parameter**|**Typ.**|**Unit**|**Note**| |---|---|---|---|---| |RθJC|Thermal Resistance from Junction to Case|0.85*<br>0.43**|°C/W|Fig. 9| * Per Leg, ** Per Device ## **Typical Performance (Per Leg)** **==> picture [541 x 289] intentionally omitted <==** **----- Start of picture text -----**<br> 20 20 0.0007 700<br>18 18 [T] J [=-55°C]<br>[T] J [= 25°C] 0.0006 600<br> TJ= 75°C<br>16 16 TJ =125°C<br>TJ =175°C<br>0.0005 500<br>14 14<br>12 12<br>0.0004 400<br>10 10<br>0.0003 300<br>8 8<br>[T] J [=-55°C]<br>6 6 0.0002 200 [T] J [= 25°C]<br> TJ= 75°C<br>4 4 TTJJ =125°C =175°C<br>0.0001 100<br>2 2<br>0 0 0 0<br> 0 0 0.5 1 1.5 2 2.5 3 3.5 0.5 1 1.5 2 2.5 3 3.5 0 500 1000 1500 2000 0 500 1000 1500 2000<br>VF Forward Voltage VF (V) VR Reverse Voltage VR (V)<br>VF Forward Voltage (V ) VR Reverse Voltage (V )<br> (A)<br>F (μA)<br>I R<br>I<br> Forward Current<br>F<br>I R<br>Reverse Current (μA)<br>R<br> I<br> Forward Current (A) IF<br>**----- End of picture text -----**<br> Figure 1. Forward Characteristics Figure 2. Reverse Characteristics **==> picture [176 x 44] intentionally omitted <==** C4D20120D Rev. F, 09-2016 **2** ## **Typical Performance (Per Leg)** **==> picture [541 x 606] intentionally omitted <==** **----- Start of picture text -----**<br> 120 200.0<br>180.0<br>100<br>160.0<br>140.0<br>80 [10% Duty]<br> 20% Duty<br> 30% Duty 120.0<br> 50% Duty<br>60 70% Duty 100.0<br> DC<br>80.0<br>40<br>60.0<br>40.0<br>20<br>20.0<br>0 0.0<br>25 50 75 100 125 150 175 25 50 75 100 125 150 175<br>Tc Case Temperature ( T ˚C ° C) T ˚C<br>C C<br>Figure 3. Current Derating Figure 4. Power Derating<br>70 800<br>700<br>60<br>600<br>50<br>500<br>40<br>400<br>30<br>300<br>20<br>200<br>10<br>100<br>0 0<br>0 200 400 600 800 1000 0.1 1 10 100 1000<br>VR (V) VR (V)<br> (A)<br> (W)<br>Tot<br>F(peak) k Forward Current (A) P<br>I Pea<br>IF(PEAK)<br> (nC)<br>c<br>Q C (pF)<br>**----- End of picture text -----**<br> Figure 5. Recovery Charge vs. Reverse Voltage Figure 6. Capacitance vs. Reverse Voltage **==> picture [176 x 44] intentionally omitted <==** **3** C4D20120D Rev. F, 09-2016 ## **Typical Performance** **==> picture [261 x 288] intentionally omitted <==** **----- Start of picture text -----**<br> 25.025<br>20.020<br>15.015<br>10.010<br>5.05<br>0.00<br> 0 200 400 600 800 10000 200 400 600 800 1000<br>VR Reverse Voltage (V)<br>VR (V)<br>J)<br>m<br>(<br>C<br>E<br>apacitive Energy (uJ)<br>C<br>C<br>E<br>**----- End of picture text -----**<br> Figure 7. Typical Capacitance Stored Energy, per leg **==> picture [263 x 288] intentionally omitted <==** **----- Start of picture text -----**<br> 1000 1000<br>100 100<br>[T] J_initial [= 25°C]<br> TJ_initial = 110°C<br>10 10<br> 1E-05 1E-04 1E-03 1E-02 1.E-05 1.E-04 1.E-03 1.E-02<br>tp (s) tp(s)<br>(A)<br> (A) FSM<br>I FSM<br>I<br>**----- End of picture text -----**<br> Figure 8. Non-Repetitive Peak Forward Surge Current versus Pulse Duration (sinusoidal waveform), per leg **==> picture [392 x 270] intentionally omitted <==** **----- Start of picture text -----**<br> 0.5<br>100E-3 0.3<br>0.1<br>0.05<br>10E-3 SinglePulse<br>0.02<br>0.01<br>1E-3<br>1E-6 10E-6 100E-6 1E-3 10E-3 100E-3 1<br>Time, t T (Sec) p (s)<br>C/W)<br>o<br> (<br>thJC<br>Case Impedance, Z<br>Thermal Resistance (˚C/W)<br>Junction To<br>**----- End of picture text -----**<br> Figure 9. Device Transient Thermal Impedance **==> picture [176 x 44] intentionally omitted <==** C4D20120D Rev. F, 09-2016 **4** ## **Package Dimensions** Package TO-247-3 **==> picture [400 x 359] intentionally omitted <==** **----- Start of picture text -----**<br> ||||||||| |---|---|---|---|---|---|---|---| |Inches|Millimeters| |POS| |Min|Max|Min|Max| |oo——| |A|.190|.205|4.83|5.21| |—| |A1|.090|.100|2.29|2.54| |A2|.075|.085|1.91|2.16| |b|.042|.052|1.07|1.33| |b1|.075|.095|1.91|2.41| |b3|.113|.133|2.87|3.38| |©)|P||Geer|c|.022|.027|0.55|0.68| |D|.819|.831|20.80|21.10| |D1|.640|.695|16.25|17.65| |D2|.037|.049|0.95|1.25| |a|a| |E|.620|.635|15.75|16.13| |—| |E1|.516|.557|13.10|14.15| |—| |E2|.145|.201|3.68|5.10| |—| |E3|.039|.075|1.00|1.90| |—| |E4|.487|.529|12.38|13.43| |rr| |e|e|.214 BSC|5.44 BSC| |—| |L|.780|.800|19.81|20.32| |L1|.161|.173|4.10|4.40| |N|3| |ØP|.138|.144|3.51|3.65| |>| |>|Q|.216|.236|5.49|6.00| |S|.238|.248|6.04|6.30| |FF| |T|17.5° REF| |W|3.5° REF| |—| |X|4° REF| **----- End of picture text -----**<br> ## **Recommended Solder Pad Layout** **==> picture [231 x 32] intentionally omitted <==** **----- Start of picture text -----**<br> |||| |---|---|---| |Part Number|Package|Marking| |C4D20120D|TO-247-3|C4D20120| **----- End of picture text -----**<br> O- _all units are in inches_ TO-247-3 **Note: Recommended soldering profiles can be found in the applications note here:** http://www.wolfspeed.com/power_app_notes/soldering C4D20120D Rev. F, 09-2016 **5** ## **Diode Model** VfT = VT+If*RT VT = 0.98+(TJ* -1.71*10[-3] ) RT = 0.040+(TJ* 5.32*10[-4] ) **Note: Tj = Diode Junction Temperature In Degrees Celsius, valid from 25°C to 175°C** **==> picture [85 x 21] intentionally omitted <==** **----- Start of picture text -----**<br> VT RT<br>**----- End of picture text -----**<br> ## **Notes** - **RoHS Compliance** - The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Wolfspeed representative or from the Product Ecology section of our website at http:// www.wolfspeed.com/power/tools-and-support/product-ecology. - **REACh Compliance** REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. - This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control systems. ## **Related Links** - Cree SiC Schottky diode portfolio: http://www.wolfspeed.com/Power/Products#SiCSchottkyDiodes - Schottky diode Spice models: http://www.wolfspeed.com/power/tools-and-support/DIODE-model-request2 - SiC MOSFET and diode reference designs: http://go.pardot.com/l/101562/2015-07-31/349i Copyright © 2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.cree.com/power C4D20120D Rev. F, 09-2016 **6**
Updated at April 29, 2026
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