C4D02120E

**V** =    1200 V **Silicon Carbide Schottky Diode RRM IF (TC=135˚C) F (TC=135˚C) (TC=135˚C) TC=135˚C) C=135˚C) =135˚C)** = 4.5 A _Z-Recec[[®]]_ RectifieRectifieR **Qcc** = 11 nC **Features Packagegee** ~~OLL~~ • 1.2kV Schottky Rectifier • Optimized for PFC Boost Diode Application • Zero Reverse Recovery Current • High-Frequency Operation • Temperature-Independent Switching Behavior • Positive Temperature Coefficient on VF **Benefits** TO-252-2 • Replace Bipolar with Unipolar Rectifiers • Essentially No Switching Losses PIN 1 • Higher Efficiency CASE PIN 2 ~~>~~ » 

- CREE} **C4D02120E V** =    1200 V 

- **Silicon Carbide Schottky Diode RRM IF (TC=135˚C) F (TC=135˚C) (TC=135˚C) TC=135˚C) C=135˚C) =135˚C)** = 4.5 A 

- _Z-Recec[[®]]_ RectifieRectifieR **Qcc** = 11 nC 

- **Features Packagegee** ~~OLL~~ • 1.2kV Schottky Rectifier • Optimized for PFC Boost Diode Application 

- Reduction of Heat Sink Requirements 

- Parallel Devices Without Thermal Runaway 

## **Applications** 

**Part Number Package Marking** • Solar Inverters • Power Factor Correction C4D02120E TO-252-2 C4D02120 ~~er~~ • LED Lighting Power Supplies • X-Ray Tube Power Drivers • EV Charging and Power Conversion 

**Maximum Ratings** (TC=25°C unless otherwise specified) 

**Symbol Parameter Value Unit Test Conditions Note** VRRM Repetitive Peak Reverse Voltage 1200 V ~~ae~~ VRSM Surge Peak Reverse Voltage 1300 V VDC DC Blocking Voltage 1200 V ~~————~~ 9 TC=25˚C IF Maximum DC Current 4.5 A TC=135˚C ~~ee~~ 2 TC=162˚C ~~a~~ IFRM ~~e~~ Repetitive Peak Forward Surge Current ~~ee~~ 14.410 ~~eee~~ ~~**e**~~ A TTCC=25˚C, t=110˚C, t ~~ee~~ P=10 ms, Half Sine pulseP=10 ms, Half Sine pulse ~~ee ee~~ IFSM Non-Repetitive Peak Forward Surge Current 16.519 A TTCC=25˚C, t=110˚C, tP=10 ms, Half Sine pulseP=10 ms, Half Sine pulse IF,Max Non-Repetitive Peak Forward Current 200160 A TTCC=25˚C, t=110˚C, tP=10 P=10 ms, Pulsems, Pulse ~~——~~ Ptot Power Dissipation 51.722.4 W TTCC=25˚C=110˚C -55 to TJ Operating Junction Range +175 ˚C -55 to Tstg Storage Temperature Range +135 ˚C ~~———~~ 

**1** C4D02120E Rev. G 

## **Electrical Characteristics** 

**==> picture [543 x 25] intentionally omitted <==**

**----- Start of picture text -----**<br>
Symbol Parameter Typ. Max. Unit Test Conditions Note<br>**----- End of picture text -----**<br>


|**Symbol**|**Parameter**|**Typ.**|**Max.**|**Unit**|**Test Conditions**|**Note**|
|---|---|---|---|---|---|---|
|VF|Forward Voltage|1.4<br>1.9|1.8<br>3|V|IF= 2 A  TJ=25°C<br>IF= 2 A  TJ=175°C||
|IR|Reverse Current|10<br>40|50<br>150|μA|VR= 1200 V  TJ=25°C<br>VR= 1200 V  TJ=175°C||
||||||VR= 800 V, IF= 2A||
|QC|Total Capacitive Charge|11||nC|d_i_/d_t_= 200 A/μs||
||||||TJ= 25°C||
|C|Total Capacitance|167<br>11<br>8||pF|VR= 0 V, TJ= 25°C, f = 1 MHz<br>VR= 400 V, TJ= 25˚C, f = 1 MHz<br>VR= 800 V, TJ= 25˚C, f = 1 MHz||
|EC|Capacitance Stored Energy|3.2||μJ|VR= 800 V|Fig. 7|



Note: 

1. This is a majority carrier diode, so there is no reverse recovery charge. 

## **Thermal Characteristics** 

|**Symbol**|**Parameter**|**Typ.**|**Unit**|
|---|---|---|---|
|RθJC|TO-252 Package Thermal Resistance from Junction to Case|2.9|°C/W|



## **Typical Performance** 

**==> picture [541 x 289] intentionally omitted <==**

**----- Start of picture text -----**<br>
4 600<br>[T] J [=-55°C]<br>3.5 [T] J [= 25°C]<br>  TJ= 75°C   500<br>  TJ =125°C<br>3 TJ =175°C<br>400<br>2.5<br>2 300<br>[T] J [=-55°C]<br>[T] J [= 25°C]<br>1.5 200   T  TJJ= 75°C   =125°C<br>TJ =175°C<br>1<br>100<br>0.5<br>0 0<br>0 0.5 1 1.5 2 2.5 3 3.5 0 500 1000 1500 2000<br>VF (V) VR (V)<br> (A)IF  (μA)IR<br>**----- End of picture text -----**<br>


Figure 1. Forward Characteristics 

Figure 2. Reverse Characteristics 

**==> picture [176 x 44] intentionally omitted <==**

C4D02120E Rev. G 

**2** 

## **Typical Performance** 

**==> picture [261 x 621] intentionally omitted <==**

**----- Start of picture text -----**<br>
35<br>30<br>[10% Duty]<br>  20% Duty<br>25   30% Duty<br>  50% Duty<br>  70% Duty<br>  DC<br>20<br>15<br>10<br>5<br>0<br>25 50 75 100 125 150 175<br>T  ˚C<br>C<br>Figure 3. Current Derating<br>16<br>14<br>12<br>10<br>8<br>6<br>4<br>2<br>0<br>0 200 400 600 800 1000<br>VR (V)<br> (A)<br>F(peak)<br>I<br>Qrr (nC)<br>**----- End of picture text -----**<br>


Figure 5. Recovery Charge vs. Reverse Voltage 

**==> picture [262 x 621] intentionally omitted <==**

**----- Start of picture text -----**<br>
60<br>50<br>40<br>30<br>20<br>10<br>0<br>25 50 75 100 125 150 175<br>T  ˚C<br>C<br>Figure 4. Power Derating<br>180<br>160<br>140<br>120<br>100<br>80<br>60<br>40<br>20<br>0<br>0.1 1 10 100 1000<br>VR (V)<br> (W)<br>Tot<br>P<br>C (pF)<br>**----- End of picture text -----**<br>


Figure 6. Capacitance vs. Reverse Voltage 

**==> picture [176 x 44] intentionally omitted <==**

**3** 

C4D02120E Rev. G 

## **Typical Performance** 

**==> picture [549 x 288] intentionally omitted <==**

**----- Start of picture text -----**<br>
6.0 6 1000 1000<br>5.0 5<br>4.0 4<br>3.0 3 100 100<br>2.0 2<br>[T] J  [= 25°C]<br>  TJ = 110°C<br>1.0 1<br>0.0 0 10 10<br>   0            200          400           600          800         1000 0 200 400 600 800 1000    1E-05                  1E-04                   1E-03                   1E-02 1.E-05 1.E-04 1.E-03 1.E-02<br>VR Reverse Voltage (V) VR (V) tp (s) tp(s)<br>J) (A)<br>m<br>(<br>C  (A) FSM<br>E I FSM<br>I<br>Capacitive Energy (uJ)<br>C<br>E<br>**----- End of picture text -----**<br>


Figure 7. Typical Capacitance Stored Energy 

Figure 8. Non-repetitive peak forward surge current versus pulse duration (sinusoidal waveform) 

**==> picture [392 x 270] intentionally omitted <==**

**----- Start of picture text -----**<br>
0.5<br>1<br>0.3<br>0.1<br>0.05<br>100E-3 0.02<br>SinglePulse<br>0.01<br>10E-3<br>1E-3<br>1E-6 10E-6 100E-6 1E-3 10E-3 100E-3 1<br>T (Sec)<br>Thermal Resistance (˚C/W)<br>**----- End of picture text -----**<br>


Figure 9. Transient Thermal Impedance 

**==> picture [176 x 44] intentionally omitted <==**

C4D02120E Rev. G 

**4** 

## **Package Dimensions** 

Package TO-252-2 

**==> picture [189 x 14] intentionally omitted <==**

**----- Start of picture text -----**<br>
es θ<br>**----- End of picture text -----**<br>


## **Recommended Solder Pad Layout** 

|**Part Number**|**Package**|**Marking**|
|---|---|---|
|C4D02120E|TO-252-2|C4D02120|



**==> picture [44 x 8] intentionally omitted <==**

**----- Start of picture text -----**<br>
TO-252-2<br>**----- End of picture text -----**<br>


**Note: Recommended soldering profiles can be found in the applications note here:** http://www.cree.com/power_app_notes/soldering 

C4D02120E Rev. G 

**5** 

## **Diode Model** 

**==> picture [408 x 152] intentionally omitted <==**

**----- Start of picture text -----**<br>
         VfT = VT+If*RT<br>VT = 0.9592+(TJ* -1.20*10 [-3] )<br>RT = 0.1673+(TJ* 2.10*10 [-3] )<br>Note: TJ = Diode Junction Temperature in Degrees Celsius,<br>valid from 25°C to 175°C<br>VT  RT<br>**----- End of picture text -----**<br>


## **Notes** 

- **RoHS Compliance** 

   - The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree representative or from the Product Documentation sections of www.cree.com. 

## **• REACh Compliance** 

REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. 

- This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control systems. 

## **Related Links** 

- Cree SiC Schottky diode portfolio: http://www.cree.com/diodes 

- C3D Spice models: http://response.cree.com/Request_Diode_model 

- SiC MOSFET and diode reference designs: http://response.cree.com/SiC_RefDesigns 

Copyright © 2015 Cree, Inc. All rights reserved. 

The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. 

Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.cree.com/power 

C4D02120E Rev. G 

**6**