C3D1P7060Q

- CREE + **C3D1P7060Q V** =        600 V 

- **Silicon Carbide Schottky Diode RRM** _Z-Rec[®]_ Rectifier **IF (TC=135˚C)** =     3.3 A **Qc** =          4 nC 

- **Features Package** ~~iL~~ • 600-Volt Schottky Rectifier • Optimized for PFC Boost Diode Application 

- Zero Reverse Recovery Current 

- High-Frequency Operation 

- Temperature-Independent Switching Behavior 

- Extremely Fast Switching 

- Positive Temperature Coefficient on VF 

PowerQFN 3.3x3.3 

## **Benefits** 

- Small compact surface mount package 

- • Essentially No Switching Losses **Part Number Package Marking** • Higher Efficiency • Reduction of Heat Sink Requirements C3D1P7060Q QFN 3.3 C3D1P7060 • Parallel Devices Without Thermal Runaway **Applications** ~~Se~~ • Switch Mode Power Supplies • LED Lighting • Medical imaging systems 

**Maximum Ratings** (TC = 25 ˚C unless otherwise specified) 

|**Maximum Ratings**|**Maximum Ratings**(TC = 25 ˚C unless otherwise specified)C = 25 ˚C unless otherwise specified)= 25 ˚C unless otherwise specified)|(TC = 25 ˚C unless otherwise specified)C = 25 ˚C unless otherwise specified)= 25 ˚C unless otherwise specified)||||
|---|---|---|---|---|---|
|**Symbol**<br>~~a~~|**Parameter**<br>~~a~~|**Value**<br>~~a~~|**Unit**<br>~~a~~|**Test Conditions**<br>~~a~~|**Note**<br>~~a~~|
|VRRM<br>~~a~~|Repetitive Peak Reverse Voltage<br>~~a~~|600<br>~~a~~<br>~~oe eo~~|V<br>~~a~~<br>~~eo~~|~~a~~<br>~~eo~~|~~a~~<br>~~eo~~|
|VRSM<br>~~es~~|Surge Peak Reverse Voltage<br>~~es~~|600<br>~~es~~<br>~~oe eo~~|V<br>~~es~~<br>~~eo~~|~~es~~<br>~~eo~~|~~es~~<br>~~eo~~|
|VDC<br>~~es~~|DC Blocking Voltage<br>~~es~~|600<br>~~es~~<br>~~oe eo~~|V<br>~~es~~<br>~~eo~~|~~es~~<br>~~eo~~|~~es~~<br>~~eo~~|
|IF<br>~~ee~~|Continuous Forward Current<br>~~ee~~|9.7<br>3.3<br>1.7<br>~~oe eo~~<br>~~ee~~|A<br>~~eo~~<br>~~ee~~|TC=25˚C<br>TC=135˚C<br>TC=150˚C<br>~~eo~~<br>~~ee~~|Fig 3<br>~~eo~~<br>~~ee~~|
|IFRM<br>~~ee~~<br>~~es~~|Repetitive Peak Forward Surge Current<br>~~ee~~<br>~~es~~|7<br>4.5<br>~~ee~~<br>~~oo~~|A<br>~~ee~~<br>~~oo~~|TC=25˚C, tP= 10 ms, Half Sine Wave<br>TC=110˚C, tP= 10 ms, Half Sine Wave<br>~~ee~~<br>~~oo~~|~~ee~~<br>~~oo~~|
|IFSM<br>~~es~~|Non-Repetitive Peak Forward Surge Current<br>~~es~~|15<br>12<br>~~oo~~|A<br>~~oo~~|TC=25˚C, tp= 10 ms, Half Sine Wave<br>TC=110˚C, tp= 10 ms, Half Sine Wave<br>~~oo~~|Fig. 8<br>~~oo~~|
|IF,Max<br>~~es~~|Non-Repetitive Peak Forward Surge Current<br>~~es~~|50<br>40<br>~~oo~~|~~oo~~|TC=25˚C, tP= 10 µs, Pulse<br>TC=110˚C, tP= 10 µs, Pulse<br>~~oo~~|Fig. 8<br>~~oo~~|
|Ptot<br>~~es~~<br>~~ee~~|Power Dissipation<br>~~es~~<br>~~ee~~|35.5<br>13<br>~~oo~~<br>~~ee~~|W<br>~~oo~~<br>~~ee~~|TC=25˚C<br>TC=110˚C<br>~~oo~~<br>~~ee~~|Fig. 4<br>~~oo~~<br>~~ee~~|
|TJ, Tstg<br>~~ee~~|Operating Junction and Storage Temperature<br>~~ee~~|-55 to<br>+160<br>~~ee~~|˚C<br>~~ee~~|~~ee~~|~~ee~~|



**1** C3D1P7060Q Rev. E 

## **Electrical Characteristics** 

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Symbol Parameter Typ. Max. Unit Test Conditions Note<br>**----- End of picture text -----**<br>


|**Symbol**|**Parameter**|**Typ.**|**Max.**|**Unit**|**Test Conditions**|**Note**|
|---|---|---|---|---|---|---|
|VF|Forward Voltage|1.5<br>1.7|1.7<br>2.4|V|IF= 1.7 A  TC=25°C<br>IF= 1.7 A  TC=150°C|Fig. 1|
|IR|Reverse Current|3<br>6|15<br>55|μA|VR= 600 V  TC=25°C<br>VR= 600 V  TC=150°C|Fig. 2|
|QC|Total Capacitive Charge|4||nC|VR= 400 V, IF= 1.7A<br>d_i_/d_t_= 500 A/μs<br>TC= 25°C|Fig. 5|
|C|Total Capacitance|82.5<br>7<br>6||pF|VR= 0 V, TC= 25°C, f = 1 MHz<br>VR= 200 V, TC= 25˚C, f = 1 MHz<br>VR= 400 V, TC= 25˚C, f = 1 MHz|Fig. 6|
|EC|Capacitance Stored Energy|0.6||μJ|VR= 400 V|Fig. 7|



Note: This is a majority carrier diode, so there is no reverse recovery charge. 

## **Thermal Characteristics** 

|**Symbol**|**Parameter**|**Typ.**|**Unit**|**Note**|
|---|---|---|---|---|
|RθJC|Thermal Resistance from Junction to Case|3.8|°C/W|Fig. 9|



## **Typical Performance** 

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14 100<br>12 TJ = -55 °C<br>80<br>TJ = 25 °C<br>10<br>TJ = 75 °C TJ = 150 °C<br>60<br>8 TJ = 125 °C TJ = 125 °C<br>6 TJ = 150 °C TJ = 75 °C<br>40<br>TJ [= ] 25 °C<br>4<br>20 TJ = -55 °C<br>2<br>0 0<br> 0        200       400       600      800      1000     1200        0.0 1.0 2.0 3.0 4.0 5.0 6.0 0 100 200 300 400 500 600 700 800 900 1000 1100<br>Foward Voltage, V VF (V) F (V) Reverse Voltage, V VR (V) R (V)<br> (uA)<br> (A)F RR<br>A)<br>m<br> (A)  (<br>F R<br>I I<br>ard Current, I age Current, I<br>Fow Reverse Leak<br>**----- End of picture text -----**<br>


Figure 1. Forward Characteristics 

Figure 2. Reverse Characteristics 

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C3D1P7060Q Rev. E 

## **Typical Performance** 

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18 40<br>10% Duty<br>16<br>20% Duty 35<br>30% Duty<br>14<br>50% Duty 30<br>70% Duty<br>12 DC<br>25<br>10<br>20<br>8<br>15<br>6<br>10<br>4<br>2 5<br>0 0<br>25 40 55 70 85 100 115 130 145 160 25 50 75 100 125 150 175<br>T TC C  (°C)  ˚C T T C C  (°C)  ˚C<br>Figure 3. Current Derating Figure 4. Power Derating<br>6 90<br>Conditions: Conditions:<br>TJ = 25 °C 80 TJ = 25 °C<br>5 Ftest = 1 MHz<br>70 Vtest = 25 mV<br>4 60<br>50<br>3<br>40<br>2 30<br>20<br>1<br>10<br>0 0<br>0 100 200 300 400 500 600 700 0 1 10 100 1000<br>Reverse Voltage, V VR (V) R (V) Reverse Voltage, V VR (V) R (V)<br> (A)<br> (A)  (W)<br>IF  (W)<br>Tot<br>F(peak) P TOT<br>I P<br> (nC)<br>C<br> (nC)<br>C<br>C (pF)<br>Q<br>tive Charge, Q<br>apacitance (pF)<br>Capaci C<br>**----- End of picture text -----**<br>


Figure 5. Total Capacitance Charge vs. Reverse Voltage 

Figure 6. Capacitance vs. Reverse Voltage 

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C3D1P7060Q Rev. E 

## **Typical Performance** 

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2<br>1.6<br>1.2<br>0.8<br>0.4<br>0<br>0 100 200 300 400 500 600 700<br>Reverse Voltage, V VR (V) R (V)<br>J)<br>µ<br> (<br>C<br>J)<br>m<br>(<br>C<br>E<br>ored Energy, E<br>Capacitance St<br>**----- End of picture text -----**<br>


Figure 7. Capacitance Stored Energy 

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100<br>10 TJ = 25 °C<br>TJ = 110 °C<br>1<br>10E-6 100E-6 1E-3 10E-3<br>Time, t tp (s) p (s)<br> (A)  (A)<br>FSM FSM<br>I I<br>**----- End of picture text -----**<br>


Figure 8. Non-repetitive peak forward surge current versus pulse duration (sinusoidal waveform) 

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0.5<br>1<br>0.3<br>0.1<br>0.05<br>0.02<br>100E-3<br>SinglePulse<br>0.01<br>10E-3<br>1E-6 10E-6 100E-6 1E-3 10E-3 100E-3 1<br>Time, t T (Sec) p (s)<br>C/W)<br>o<br>Thermal Resistance  (<br>Thermal Resistance (˚C/W)<br>**----- End of picture text -----**<br>


Figure 9. Transient Thermal Impedance 

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C3D1P7060Q Rev. E 

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## **Package Dimensions** 

Package QFN 3.3 

All Dimensions are in mm Tolerances are 0.05 mm if not specified NC = No Connect 

C3D1P7060Q Rev. E 

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## **Recommended Landing Pattern  (All Dimensions are in mm)** 

Note: The design of the land pattern and the size of the thermal pad depend mainly on the thermal characteristic and power dissipation. In general, the size of the thermal pad should be as close to the exposed pad of the package as possible, provided that there is no bridging between the thermal pad and the lead pads. 

The 0.050mm extra length and width provides space to accommodate the placement tolerance of the component during pick and place process. The 0.150mm along the perimeter present areas for solder to form fillet along the side metal edges of the package. 

**Note: Recommended soldering profiles can be found in the applications note here:** http://www.cree.com/power_app_notes/soldering 

C3D1P7060Q Rev. E 

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## **Diode Model** 

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        VfT = VT + If * RT<br>VT = 1.15 + (TJ * 1.1*10 [-3] )<br>RT = 0.13 + (TJ * 1.1*10 [-3] )<br>VT  RT  Note: Tj = Diode Junction Temperature In Degrees Celsius,  valid from 25°C to 175°C<br>**----- End of picture text -----**<br>


## **Notes** 

- **RoHS Compliance** 

   - The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/ EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree representative or from the Product Documentation sections of www.cree.com. 

- **REACh Compliance** 

   - REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. 

- This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control systems. 

## **Related Links** 

- Cree SiC Schottky diode portfolio: http://www.cree.com/diodes 

- Schottky diode Spice models: http://response.cree.com/Request_Diode_model 

- SiC MOSFET and diode reference designs: http://response.cree.com/SiC_RefDesigns 

Copyright © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. 

Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.cree.com/power 

C3D1P7060Q Rev. E 

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