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C3D10065I
Silicon Carbide Schottky Diode, Z-Rec, Single, 650 V, 10 A, 25 nC, TO-220
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- Manufacturer: WOLFSPEED
- Product type: Silicon Carbide Schottky Diodes
- Product Range:Z-Rec Series; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:650V; Continuous Forward Current If:10A; Total Capacitive Charge Qc:25nC; Diode Case Sty
- No. of Pins: 2 Pin
- Product Range: Z-Rec
- Qualification: -
- Diode Mounting: Through Hole
- Diode Case Style: TO-220
- Diode Configuration: Single
- Average Forward Current: 10A
- Total Capacitive Charge: 25nC
- Operating Temperature Max: 175°C
- Repetitive Peak Reverse Voltage: 650V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 1.87 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
**C3D10065I Silicon Carbide Schottky Diode** ## _Z-Rec[®]_ Rectifier ## **Features** ## **Package** **V** = 650 V **RRM IF (TC=125˚C)** = 10 A **Qc** = 24 nC - 650-Volt Schottky Rectifier - Ceramic Package Provides 2.5kV Isolation - Zero Reverse Recovery Current - High-Frequency Operation - Temperature-Independent Switching Behavior - Positive Temperature Coefficient on VF ## **Benefits** > [TO-220 Isolated] - Electrically Isolated Package - Essentially No Switching Losses - Higher Efficiency - Reduction of Heat Sink Requirements - Parallel Devices Without Thermal Runaway PIN 1 CASE PIN 2 ## **Applications** - HVAC - Switch Mode Power Supplies (SMPS) - Boost diodes in PFC or DC/DC stages - Free Wheeling Diodes in Inverter Stages **Part Number Package Marking** C3D10065I Isolated TO-220-2 C3D10065I ~~+}—~~ - AC/DC converters ## **Maximum Ratings** (TC = 25˚C unless otherwise specified) |**Maximum Ratings**|**Maximum Ratings**(TC = 25˚C unless otherwise specified)C = 25˚C unless otherwise specified)= 25˚C unless otherwise specified)|(TC = 25˚C unless otherwise specified)C = 25˚C unless otherwise specified)= 25˚C unless otherwise specified)|(TC = 25˚C unless otherwise specified)C = 25˚C unless otherwise specified)= 25˚C unless otherwise specified)||| |---|---|---|---|---|---| |**Symbol**|**Parameter**|**Value**|**Unit**|**Test Conditions**|**Note**| |VRRM|Repetitive Peak Reverse Voltage|650<br>~~ee~~|V<br>~~ee~~|~~ee~~|~~ee~~| |VRSM<br>~~ee~~|Surge Peak Reverse Voltage<br>~~ee~~|650<br>~~ee~~<br>~~ee~~<br>~~ee~~|V<br>~~ee~~<br>~~ee~~<br>~~ee~~|~~ee~~<br>~~ee~~<br>~~ee~~|~~ee~~<br>~~ee~~<br>~~ee~~| |VDC<br>~~ee~~<br>~~a~~|DC Blocking Voltage<br>~~ee~~<br>|650<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|V<br>~~ee~~<br>~~ee~~<br>~~ee~~|~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~| |IF<br>~~ee~~<br>~~a a~~<br>~~a~~|Continuous Forward Current<br>~~ee~~<br>~~a~~<br>|19<br>10<br>9<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|A<br>~~ee~~<br>~~ee~~<br>~~ee~~|TC=25˚C<br>TC=125˚C<br>TC=135˚C<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|Fig. 3<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~| |IFRM<br>~~a a~~<br>~~a a~~<br>~~a~~|Repetitive Peak Forward Surge Current<br>~~a~~<br>~~a~~<br>|39<br>26.5<br>~~ee~~<br>~~ee~~<br>~~ee~~|A<br>~~ee~~<br>~~ee~~|TC=25˚C, tP=10 ms, Half Sine Pulse<br>TC-110˚C, tP=10 ms, Half Sine Pulse<br>~~ee~~<br>~~ee~~<br>~~ee~~|~~ee~~<br>~~ee~~<br>~~ee~~| |IFSM<br>~~a~~<br>~~a a~~<br>~~a a~~<br>~~a~~|Non-Repetitive Peak Forward Surge Current<br>~~a~~<br>~~a~~<br>~~a~~<br>|90<br>70<br>~~ee ~~<br>~~ee~~<br>~~ee~~|A<br> ~~ee~~<br>~~ee~~<br>~~ee~~|TC=25˚C, tP=10 ms, Half Sine Pulse<br>TC=110˚C, tP=10 ms, Half Sine Pulse<br>~~ee ~~<br>~~ee~~<br>~~ee~~|Fig. 8<br> ~~ee~~<br>~~ee~~<br>~~ee~~| |IF,Max<br>~~a~~<br>~~a a~~<br>~~a a~~<br>~~a~~|Non-Repetitive Peak Forward Surge Current<br>~~a~~<br>~~a~~<br>~~a~~<br>|860<br>680<br>~~ee ~~<br>~~ee~~<br>~~ee~~|A<br> ~~ee~~<br>~~ee~~<br>~~ee~~|TC=25˚C, tP=10 ms, Pulse<br>TC=110˚C, tP=10 ms, Pulse<br>~~ee ~~<br>~~ee~~<br>~~ee~~|Fig. 8<br> ~~ee~~<br>~~ee~~<br>~~ee~~| |Ptot<br>~~a~~<br>~~a a~~<br>~~a a~~<br>~~a~~|Power Dissipation<br>~~a~~<br>~~a~~<br>~~a~~<br>|60<br>26<br>~~ee ~~<br>~~ee~~<br>~~ee~~|W<br> ~~ee~~<br>~~ee~~<br>~~ee~~|TC=25˚C<br>TC=110˚C<br>~~ee ~~<br>~~ee~~<br>~~ee~~|Fig. 4<br> ~~ee~~<br>~~ee~~<br>~~ee~~| |dV/dt<br>~~a~~<br>~~a a~~<br>~~a~~<br>~~a~~|Diode dV/dt ruggedness<br>~~a~~<br>~~a~~<br>~~**a**~~|200<br>~~ee ~~<br>~~ee~~<br>~~**ee**~~|V/ns<br> ~~ee~~<br>~~ee~~<br>~~**ee**~~|VR=0-650V<br>~~ee ~~<br>~~ee~~<br>~~**ee**~~|~~ee~~<br>~~ee~~<br>~~**ee**~~| |∫i2dt<br>~~a~~<br>~~a ~~<br>~~a~~|i2t value<br>~~a~~<br> ~~**a**~~|40.5<br>24.5<br>~~ee ~~<br>~~**ee**~~|A2s<br> ~~ee~~<br>~~**ee**~~|TC=25˚C, tP=10 ms<br>TC=110˚C, tP=10 ms<br>~~ee ~~<br>~~**ee**~~|~~ee~~<br>~~**ee**~~| |TJ, Tstg<br> <br>~~a~~<br>~~a~~|Operating Junction and Storage Temperature<br> ~~**a**~~<br>~~ee~~|-55 to<br>+175<br>~~**ee** ~~<br>~~ee~~|˚C<br> ~~**ee**~~<br>~~ee~~|~~**ee** ~~<br>~~ee~~|~~**ee**~~<br>~~ee~~| |~~a~~|TO-220 Mounting Torque<br>~~ee~~|1<br>8.8<br>~~ee~~|Nm<br>lbf-in<br>~~ee~~|M3 Screw<br>6-32 Screw<br>~~ee~~|~~ee~~| **1** C3D10065I Rev. F, 01-2019 ## **Electrical Characteristics** **==> picture [543 x 25] intentionally omitted <==** **----- Start of picture text -----**<br> Symbol Parameter Typ. Max. Unit Test Conditions Note<br>**----- End of picture text -----**<br> |**Symbol**|**Parameter**|**Typ.**|**Max.**|**Unit**|**Test Conditions**|**Note**| |---|---|---|---|---|---|---| |VF|Forward Voltage|1.5<br>2.0|1.8<br>2.4|V|IF= 10 A TJ=25°C<br>IF= 10 A TJ=175°C|Fig. 1| |IR|Reverse Current|12<br>24|60<br>220|μA|VR= 650 V TJ=25°C<br>VR= 650 V TJ=175°C|Fig. 2| |QC|Total Capacitive Charge|24||nC|VR= 400 V, IF= 10 A<br>d_i_/d_t_= 500 A/μs<br>TJ= 25°C|Fig. 5| |C|Total Capacitance|460.5<br>44<br>40||pF|VR= 0 V, TJ= 25°C, f = 1 MHz<br>VR= 200 V, TJ= 25˚C, f = 1 MHz<br>VR= 400 V, TJ= 25˚C, f = 1 MHz|Fig. 6| |EC|Capacitance Stored Energy|3.6||μJ|VR= 400 V|Fig. 7| Note: This is a majority carrier diode, so there is no reverse recovery charge. ## **Thermal Characteristics** |**Symbol**|**Parameter**|**Typ.**|**Unit**|**Note**| |---|---|---|---|---| |RθJC|Thermal Resistance from Junction to Case|2.5|°C/W|Fig. 9| ## **Typical Performance** **==> picture [541 x 289] intentionally omitted <==** **----- Start of picture text -----**<br> 30 100<br>90<br>TJ = -55 °C<br>25<br>80<br>TJ = 25 °C<br>70<br>20 TJ = 75 °C TJ = 175 °C<br>60<br>TJ = 125 °C TJ = 125 °C<br>15 50<br>TJ = 175 °C TJ = 75 °C<br>40<br>10 TJ = 25 °C<br>30<br>20 TJ = -55 °C<br>5<br>10<br>0 0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 100 200 300 400 500 600 700 800 900 1000<br>Foward Voltage, V VF (V) F (V) Reverse Voltage, V VR (V) R (V)<br> (mA)<br> (A)<br>F RR<br>A)<br>m<br> (A)<br>F (<br>I R<br>I<br>ard Current, I age Current, I<br>Fow Reverse Leak<br>**----- End of picture text -----**<br> Figure 1. Forward Characteristics Figure 2. Reverse Characteristics C3D10065I Rev. F, 01-2019 **2** ## **Typical Performance** **==> picture [261 x 288] intentionally omitted <==** **----- Start of picture text -----**<br> 70<br>10% Duty<br>60 20% Duty<br>30% Duty<br>50% Duty<br>50 70% Duty<br>DC<br>40<br>30<br>20<br>10<br>0<br>25 50 75 100 125 150 175<br>T ˚C<br>C<br> (A)<br>F(peak)<br>I<br>**----- End of picture text -----**<br> Figure 3. Current Derating **==> picture [261 x 288] intentionally omitted <==** **----- Start of picture text -----**<br> 40<br>Conditions:<br>35 TJ = 25 °C<br>30<br>25<br>20<br>15<br>10<br>5<br>0<br>0 100 200 300 400 500 600 700<br>Reverse Voltage, V VR (V) R (V)<br> (nC)<br>C<br> (nC)<br>C<br>Q<br>ive Charge, Q<br>Capacit<br>**----- End of picture text -----**<br> Figure 5. Total Capacitance Charge vs. Reverse Voltage **==> picture [262 x 607] intentionally omitted <==** **----- Start of picture text -----**<br> 70<br>60<br>50<br>40<br>30<br>20<br>10<br>0<br>25 50 75 100 125 150 175<br>T ˚C<br>C<br>Figure 4. Power Derating<br>500<br>Conditions:<br>450 TJ = 25 °C<br>Ftest = 1 MHz<br>400 Vtest = 25 mV<br>350<br>300<br>250<br>200<br>150<br>100<br>50<br>0<br>0 1 10 100 1000<br>Reverse Voltage, V VR (V) R (V)<br> (W)<br>Tot<br>P<br>C (pF)<br>apacitance (pF)<br>C<br>**----- End of picture text -----**<br> Figure 6. Capacitance vs. Reverse Voltage **3** C3D10065I Rev. F, 01-2019 ## **Typical Performance** **==> picture [261 x 288] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>9<br>8<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 100 200 300 400 500 600 700<br>Reverse Voltage, V VR (V) R (V)<br>J)<br>µ<br> (<br>C<br>J)<br>m<br>(<br>C<br>E<br>ored Energy, E<br>Capacitance St<br>**----- End of picture text -----**<br> Figure 7. Capacitance Stored Energy **==> picture [262 x 288] intentionally omitted <==** **----- Start of picture text -----**<br> 1,000<br>100 TJ = 25 °C<br>TJ = 110 °C<br>10<br>10E-6 100E-6 1E-3 10E-3<br>Time, t tp (s) p (s)<br> (A) (A)<br>IFSM<br>FSM<br>I<br>**----- End of picture text -----**<br> Figure 8. Non-repetitive peak forward surge current versus pulse duration (sinusoidal waveform) **==> picture [392 x 270] intentionally omitted <==** **----- Start of picture text -----**<br> 0.5<br>1<br>0.3<br>0.1<br>100E-3 0.05<br>0.02<br>0.01 SinglePulse<br>10E-3<br>1E-3<br>1E-6 10E-6 100E-6 1E-3 10E-3 100E-3 1<br>T (Sec)<br>Thermal Resistance (˚C/W)<br>**----- End of picture text -----**<br> Figure 9. Transient Thermal Impedance C3D10065I Rev. F, 01-2019 **4** ## **Package Dimensions** Package TO-220-2 |**SYMBOL**<br>**MIN(mm)**<br>**MAX(mm)**|**SYMBOL**<br>**MIN(mm)**<br>**MAX(mm)**|**SYMBOL**<br>**MIN(mm)**<br>**MAX(mm)**| |---|---|---| |A<br>4.42<br>4.72<br>~~es~~<br>~~ee~~||| |A1<br>2.52<br>2.82<br>~~ee~~<br>~~es~~<br>~~ee~~||| |b<br>0.71<br>0.91<br>~~ee~~<br>~~es~~<br>~~ee~~||| |b1<br>1.17<br>1.37<br>~~ee~~<br>~~es~~<br>~~ee~~||| |b2<br>1.17<br>1.67<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~||| |c<br>0.36<br>0.46<br>~~ee~~<br>~~es~~<br>~~ee~~||| |c1<br>1.17<br>1.37<br>~~ee~~<br>~~es~~<br>~~ee~~||| |D<br>9.96<br>10.25<br>~~ee~~<br>~~ee~~<br>~~ee~~||| |D1<br>13.25<br>13.65<br>~~ee~~<br>~~es~~<br>~~ee~~||| |E<br>8.99<br>9.29<br>~~ee~~<br>~~es~~<br>~~ee~~||| |E1<br>12.55<br>12.85<br>~~ee~~<br>~~es~~<br>~~ee~~||| |E2<br>7.50<br>7.90<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~||| |e1<br>4.98<br>5.18<br>~~ee~~<br>~~ee~~<br>~~ee~~||| |F<br>2.59<br>2.89<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~||| |G<br>-<br>0.20<br>~~ee~~<br>~~ee~~<br>~~es~~<br>~~ee~~||| |L<br>13.08<br>13.48<br>~~ee~~<br>~~es~~<br>~~ee~~||| |L1<br>2.47<br>2.87<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~||| |L2<br>3.20<br>3.60<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~||| |Ø<br>~~es~~|3.79<br>~~ee~~<br>~~es~~<br>~~ee~~|3.89<br>~~es~~| C3D10065I Rev. F, 01-2019 **5** **Recommended Solder Pad Layout** TO-220-2 **Note: Recommended soldering profiles can be found in the applications note here:** http://www.wolfspeed.com/power_app_notes/soldering ## **Diode Model** VfT = VT + If * RT VT = 0.96 + (TJ * -1.1*10[-3] ) RT = 0.07 + (TJ * 7.4*10[-4] ) **Note: Tj = Diode Junction Temperature In Degrees Celsius, valid from 25°C to 175°C** VT RT ## **Notes** - **RoHS Compliance** - The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Wolfspeed representative or from the Product Ecology section of our website at http:// www.wolfspeed.com/power/tools-and-support/product-ecology. - **REACh Compliance** - REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. - This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control systems. ## **Related Links** - Cree SiC Schottky diode portfolio: http://www.wolfspeed.com/Power/Products#SiCSchottkyDiodes - Schottky diode Spice models: http://www.wolfspeed.com/power/tools-and-support/DIODE-model-request2 - SiC MOSFET and diode reference designs: http://go.pardot.com/l/101562/2015-07-31/349i Copyright © 2019 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.cree.com/power C3D10065I Rev. F, 01-2019 **6**
Updated at April 29, 2026
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