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C3D10065A
Silicon Carbide Schottky Diode, Z-Rec 650V, Single, 650 V, 14.5 A, 24 nC, TO-220
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: WOLFSPEED
- Product type: Silicon Carbide Schottky Diodes
- Product Range:Z-Rec 650V Series; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:650V; Continuous Forward Current If:14.5A; Total Capacitive Charge Qc:24nC; Diode Case
- No. of Pins: 2 Pin
- Product Range: Z-Rec 650V
- Qualification: -
- Diode Mounting: Through Hole
- Diode Case Style: TO-220
- Diode Configuration: Single
- Average Forward Current: 14.5A
- Total Capacitive Charge: 24nC
- Operating Temperature Max: 175°C
- Repetitive Peak Reverse Voltage: 650V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 2.14 € |
| Current stock | 100+ |
| Lead time | 30 days |
## **C3D10065A Silicon Carbide Schottky Diode**
## _Z-Rec[®]_ Rectifier
## **Features**
## **Package**
**V** = 650 V **RRM IF (TC=135˚C)** = 14.5 A **Qc** = 24 nC
- 650-Volt Schottky Rectifier
- Zero Reverse Recovery Current
- Zero Forward Recovery Voltage
- High-Frequency Operation
- Temperature-Independent Switching Behavior
- Extremely Fast Switching
- Positive Temperature Coefficient on VF
TO-220-2
## **Benefits**
- Replace Bipolar with Unipolar Rectifiers
- Essentially No Switching Losses
- Higher Efficiency
PIN 1 CASE PIN 2 ~~5~~ »
- Reduction of Heat Sink Requirements
- Parallel Devices Without Thermal Runaway
## **Applications**
- Switch Mode Power Supplies
- Power Factor Correction
- Motor Drives
**Part Number Package Marking** C3D10065A TO-220-2 C3D10065 ~~——~~
**Maximum Ratings** (TC = 25 ˚C unless otherwise specified)
|**Maximum Ratings**|**Maximum Ratings**(TC = 25 ˚C unless otherwise specified)C = 25 ˚C unless otherwise specified)= 25 ˚C unless otherwise specified)|(TC = 25 ˚C unless otherwise specified)C = 25 ˚C unless otherwise specified)= 25 ˚C unless otherwise specified)||||
|---|---|---|---|---|---|
|**Symbol**<br>~~a~~<br>~~a~~|**Parameter**<br>~~ee~~<br>~~ee~~|**Value**<br>~~ee~~<br>~~ee~~|**Unit**<br>~~ee~~<br>~~ee~~|**Test Conditions**<br>~~ee~~<br>~~ee~~|**Note**<br>~~ee~~<br>~~ee~~|
|VRRM<br>~~a~~<br>~~a~~<br>~~a~~|Repetitive Peak Reverse Voltage<br>~~ee~~<br>~~ee~~|650<br>~~ee~~<br>~~ee~~|V<br>~~ee~~<br>~~ee~~|~~ee~~<br>~~ee~~|~~ee~~<br>~~eeee~~|
|VRSM<br>~~a~~<br>~~a~~<br>~~a~~|Surge Peak Reverse Voltage<br>~~ee ~~<br>~~ee~~<br>~~ee~~|650<br> ~~ee~~<br>~~ee~~<br>~~ee~~|V<br>~~ee~~<br>~~ee~~<br>~~ee~~|~~ee~~<br>~~ee~~<br>~~ee~~|~~ee~~<br>~~eeee~~<br>~~ee~~<br>~~ee~~|
|VDC<br>~~a~~<br>~~a~~|DC Blocking Voltage<br>~~ee ~~<br>~~ee~~|650<br> ~~ee~~<br>~~ee~~|V<br>~~ee~~<br>~~ee~~|~~ee~~<br>~~ee~~|~~eeee~~<br>~~ee~~<br>~~ee~~|
|IF<br>~~PoP~~<br>~~a~~|Continuous Forward Current<br>~~ee ~~<br>~~PoP~~<br>~~ee~~|30<br>14.5<br>10<br> ~~ee~~<br>~~PoP~~<br>~~ee~~|A<br>~~ee~~<br>~~PoP~~<br>~~ee~~|TC=25˚C<br>TC=135˚C<br>TC=153˚C<br>~~ee~~<br>~~PoP~~|Fig. 3<br>~~ee~~<br>~~ee~~<br>~~PoP~~|
|IFRM<br>~~a~~<br>~~a~~|Repetitive Peak Forward Surge Current<br>~~ee~~<br>~~ee~~|46<br>31<br>~~ee~~<br>~~ee~~|A<br>~~ee~~<br>~~ee~~|TC=25˚C, tP= 10 ms, Half Sine Wave<br>TC=110˚C, tP=10 ms, Half Sine Wave||
|IFSM<br>~~a~~<br>~~a~~<br>~~a~~|Non-Repetitive Peak Forward Surge Current<br>~~ee ~~<br>~~ee~~<br>~~ee~~|90<br>71<br> ~~ee~~<br>~~ee~~<br>~~ee~~|A<br>~~ee~~<br>~~ee~~<br>~~ee~~|TC=25˚C, tp= 10 ms, Half Sine Wave<br>TC=110˚C, tp= 10 ms, Half Sine Wave|Fig. 8|
|IF,Max<br>~~a~~<br>~~a~~<br>~~a~~|Non-Repetitive Peak Forward Surge Current<br>~~ee ~~<br>~~ee~~<br>~~ee~~|860<br>680<br> ~~ee~~<br>~~ee~~<br>~~ee~~|A<br>~~ee~~<br>~~ee~~<br>~~ee~~|TC=25˚C, tP= 10 µs, Pulse<br>TC=110˚C, tP= 10 µs, Pulse|Fig. 8|
|Ptot<br>~~a~~<br>~~a~~<br>~~a~~|Power Dissipation<br>~~ee ~~<br>~~ee~~<br>~~ee~~|136.5<br>59<br> ~~ee~~<br>~~ee~~<br>~~ee~~|W<br>~~ee~~<br>~~ee~~<br>~~ee~~|TC=25˚C<br>TC=110˚C|Fig. 4|
|TJ, Tstg<br>~~a~~<br>~~a~~<br>~~ee E~~|Operating Junction and Storage Temperature<br>~~ee ~~<br>~~ee~~<br>~~E~~|-55 to<br>+175<br> ~~ee~~<br>~~ee~~|˚C<br>~~ee~~<br>~~ee~~|||
|~~a~~<br>~~ee E~~|TO-220 Mounting Torque<br>~~ee ~~<br>~~E~~|1<br>8.8<br> ~~ee~~|Nm<br>lbf-in<br>~~ee~~|M3 Screw<br>6-32 Screw||
C3D10065A Rev. 4, 10-2020
**1**
## **Electrical Characteristics**
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Symbol Parameter Typ. Max. Unit Test Conditions Note<br>**----- End of picture text -----**<br>
|**Symbol**|**Parameter**|**Typ.**|**Max.**|**Unit**|**Test Conditions**|**Note**|
|---|---|---|---|---|---|---|
|VF|Forward Voltage|1.5<br>2.0|1.8<br>2.4|V|IF= 10 A TJ=25°C<br>IF= 10 A TJ=175°C|Fig. 1|
|IR|Reverse Current|12<br>24|60<br>220|μA|VR= 650 V TJ=25°C<br>VR= 650 V TJ=175°C|Fig. 2|
|QC|Total Capacitive Charge|24||nC|VR= 400 V, IF= 10 A<br>d_i_/d_t_= 500 A/μs<br>TJ= 25°C|Fig. 5|
|C|Total Capacitance|460.5<br>44<br>40||pF|VR= 0 V, TJ= 25°C, f = 1 MHz<br>VR= 200 V, TJ= 25˚C, f = 1 MHz<br>VR= 400 V, TJ= 25˚C, f = 1 MHz|Fig. 6|
|EC|Capacitance Stored Energy|3.6||μJ|VR= 400 V|Fig. 7|
Note: This is a majority carrier diode, so there is no reverse recovery charge.
## **Thermal Characteristics**
|**Symbol**|**Parameter**|**Typ.**|**Unit**|**Note**|
|---|---|---|---|---|
|RθJC|Thermal Resistance from Junction to Case|1.1|°C/W|Fig. 9|
## **Typical Performance**
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30 100<br>90<br>TJ = -55 °C<br>25<br>80<br>TJ = 25 °C<br>70<br>20 TJ = 75 °C TJ = 175 °C<br>60<br>TJ = 125 °C TJ = 125 °C<br>15 50<br>TJ = 175 °C TJ = 75 °C<br>40<br>10 TJ = 25 °C<br>30<br>20 TJ = -55 °C<br>5<br>10<br>0 0<br> 0 200 400 600 800 1000 1200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 100 200 300 400 500 600 700 800 900 1000<br>Foward Voltage, V VF (V) F (V) Reverse Voltage, V VR (V) R (V)<br> (mA)<br> (A)<br>F RR<br>A)<br>m<br> (A)<br>F (<br>I R<br>I<br>ard Current, I age Current, I<br>Fow Reverse Leak<br>**----- End of picture text -----**<br>
Figure 1. Forward Characteristics
Figure 2. Reverse Characteristics
**2**
C3D10065A Rev. 4, 10-2020
## **Typical Performance**
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100 160<br>10% Duty<br>20% Duty 140<br>30% Duty<br>80<br>50% Duty<br>120<br>70% Duty<br>DC<br>100<br>60<br>80<br>40<br>60<br>40<br>20<br>20<br>0 0<br>25 50 75 100 125 150 175 25 50 75 100 125 150 175<br>T T C C (°C) ˚C T T C C (°C) ˚C<br>Figure 3. Current Derating Figure 4. Power Derating<br>40 500<br>Conditions: Conditions:<br>35 TJ = 25 °C 450 TJ = 25 °C<br>Ftest = 1 MHz<br>30 400 Vtest = 25 mV<br>350<br>25<br>300<br>20 250<br>200<br>15<br>150<br>10<br>100<br>5<br>50<br>0 0<br>0 100 200 300 400 500 600 700 0 1 10 100 1000<br>Reverse Voltage, V VR (V) R (V) Reverse Voltage, V VR (V) R (V)<br> (A)<br> (A)IF (W) (W)<br>Tot<br>F(peak) P TOT<br>I P<br> (nC)<br>C<br> (nC)<br>C<br>C (pF)<br>Q<br>ive Charge, Q<br>apacitance (pF)<br>C<br>Capacit<br>**----- End of picture text -----**<br>
Figure 5. Total Capacitance Charge vs. Reverse Voltage
Figure 6. Capacitance vs. Reverse Voltage
**3** C3D10065A Rev. 4, 10-2020
## **Typical Performance**
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10<br>9<br>8<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 100 200 300 400 500 600 700<br>Reverse Voltage, V VR (V) R (V)<br>J)<br>µ<br> (<br>C<br>J)<br>m<br>(<br>C<br>E<br>ored Energy, E<br>Capacitance St<br>**----- End of picture text -----**<br>
Figure 7. Capacitance Stored Energy
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1,000<br>100 TJ_initial = 25 °C<br>TJ_initial = 110 °C<br>10<br>10E-6 100E-6 1E-3 10E-3<br>Time, t tp (s) p (s)<br> (A) (A)<br>I I FSM FSM<br>**----- End of picture text -----**<br>
Figure 8. Non-repetitive peak forward surge current versus pulse duration (sinusoidal waveform)
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1<br>0.5<br>0.3<br>0.1<br>100E-3<br>0.05<br>0.02<br>SinglePulse<br>10E-3 0.01<br>1E-3<br>1E-6 10E-6 100E-6 1E-3 10E-3 100E-3 1<br>Time, t T (Sec) p (s)<br>C/W)<br>o<br>Thermal Resistance (<br>Thermal Resistance (˚C/W)<br>**----- End of picture text -----**<br>
Figure 9. Transient Thermal Impedance
C3D10065A Rev. 4, 10-2020
**4**
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» 4<br>Package Dimensionsge Dimensionse Dimensions<br>Package TO-220-2<br>| ;<br>-<br>**----- End of picture text -----**<br>
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|||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
|»|4|
|Package Dimensionsge Dimensionse Dimensions|
|Package TO-220-2|||;|||POS|Min|Inches|Max|MinMillimetersMax|
|A|.381|.410|9.677|10.414|
|-|fr|eeesee|ee|ee|ee|
|TD|B|.235|.255|5.969|6.477|
|||a|es|
|C|.100|.120|2.540|3.048|
|:|
|fe|D|.223|.337|5.664|8.560|
|||||ee|ee|||
|D1|.457-.490|11.60-12.45 typ|
|||||ee|D2|.277-.303 typ|ee||7.04-7.70 typ|
|D3|.244-.252 typ|6.22-6.4 typ|
|Ion|—-||.__|||||||||es|E1E|.590.302|.615.326|14.9867.68|15.6218.28|
|ee|ee|ee|ee|ee|
|E2|.227|251|5.77|6.37|
|es|ee|ee|ee|ee|
|||.|F|.143|.153|3.632|3.886|
|||W|||G|1.105|1.147|28.067|29.134|
|7|H|.500|.550|12.700|13.970|
|a|ee|ee|ee|
|L|.025|.036|.635|.914|
|es|ee|ee|ee|ee|
|M|.045|.055|1.143|1.550|
|ee|ee|ee|ee|
|N|.195|.205|4.953|5.207|
|pee|o¥|ee|ee|ee|ee|
|P|.165|.185|4.191|4.699|
|iia|;|1H||Q|.048|.054|1.219|1.372|
|ee|ee|ee|es|
|S|3°|6°|3°|6°|
|inne|ee|ee|ee|ee|
|T|3°|6°|3°|6°|
|L|||i|U|3°|6°|3°|6°|
|V|.094|.110|2.388|2.794|
|PIN 1|W|.014|.025|.356|.635|
|CASE|X|3°|5.5°|3°|5.5°|
|ee|ee|ee|
|PIN 2|Y|.385|.410|9.779|10.414|
|||Lo|
|z|.130|.150|3.302|3.810|
|ee|es|es|
|View|A-A|NOTE:|
|1.|Dimension L, M, W apply for Solder Dip Finish|
**----- End of picture text -----**<br>
## **Recommended Solder Pad Layout**
TO-220-2
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||||
|---|---|---|
|Part Number|Package|Marking|
|C3D10065A|TO-220-2|C3D10065|
**----- End of picture text -----**<br>
**Note: Recommended soldering profiles can be found in the applications note here:** http://www.wolfspeed.com/power_app_notes/soldering
C3D10065A Rev. 4, 10-2020
**5**
## **Diode Model**
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**----- Start of picture text -----**<br>
VfT = VT + If * RT<br>VT = 0.94 + (TJ * -1.3*10 [-3] )<br>RT = 0.044 + (TJ * 4.4*10 [-4] )<br>VT RT Note: Tj = Diode Junction Temperature In Degrees Celsius, valid from 25°C to 175°C<br>**----- End of picture text -----**<br>
## **Notes**
- **RoHS Compliance**
- The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. R oHS Declarations for this product can be obtained from your Wolfspeed representative or from the Product Ecology section of our website at http://www.wolfspeed.com/power/tools-and-support/product-ecology.
## **• REACh Compliance**
REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request.
- This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control systems.
## **Related Links**
- Cree SiC Schottky diode portfolio: http://www.wolfspeed.com/Power/Products#SiCSchottkyDiodes
- Schottky diode Spice models: http://www.wolfspeed.com/power/tools-and-support/DIODE-model-request2
- SiC MOSFET and diode reference designs: http://go.pardot.com/l/101562/2015-07-31/349i
Copyright © 2020 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc.
Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.cree.com/power
C3D10065A Rev. 4, 10-2020
**6**
Updated at April 29, 2026
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