C3D08065I

## **C3D08065I Silicon Carbide Schottky Diode** _Z-Rec[®]_ Rectifier 

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V             =         650 V<br>RRM<br>IF (TC=130˚C)       =             8 A<br>Qc            =          21 nC<br>**----- End of picture text -----**<br>


## **Features** 

## **Package** 

- 650-Volt Schottky Rectifier 

- Ceramic Package Provides 2.5kV Isolation 

- Zero Reverse Recovery Current 

- High-Frequency Operation 

- Temperature-Independent Switching Behavior 

- Positive Temperature Coefficient on VF 

## **Benefits** 

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[TO-220 Isolated]<br>**----- End of picture text -----**<br>


- Electrically Isolated Package 

- Essentially No Switching Losses 

- Higher Efficiency 

- Reduction of Heat Sink Requirements 

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PIN 1<br>CASE<br>**----- End of picture text -----**<br>


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PIN 2<br>**----- End of picture text -----**<br>


- Parallel Devices Without Thermal Runaway 

## **Applications** 

- HVAC 

- Switch Mode Power Supplies (SMPS) 

- Boost diodes in PFC or DC/DC stages 

- Free Wheeling Diodes in Inverter Stages 

**Part Number Package Marking** C3D08065I Isolated TO-220-2 C3D08065I ~~-—_}—_}+—~~ 

- AC/DC converters 

**Maximum Ratings** (TC = 25˚C unless otherwise specified) 

**Symbol Parameter Value Unit Test Conditions Note** VRRM Repetitive Peak Reverse Voltage 650 V ~~ee~~ VRSM Surge Peak Reverse Voltage 650 V ~~eeee eee~~ VDC DC Blocking Voltage 650 V ~~eeee eee~~ 16.5 TC=25˚C IF Continuous Forward Current 8 A TC=130˚C Fig. 3 ~~eeee~~ 7.5 TC=135˚C ~~ee ee~~ IFRM Repetitive Peak Forward Surge Current ~~ee~~ 2919 ~~ee~~ A TTCC=25˚C, t=110˚C, tP=10 ms, Half Sine Wave P=10 ms, Half Sine Wave ~~ee ee~~ IFSM Non-Repetitive Peak Forward Surge Current ~~ee~~ 6955 ~~ee~~ A TTCC=25˚C, t=110˚C, tP=10 ms, Half Sine WaveP=10 ms, Half Sine Wave ~~ee~~ Fig. 8 ~~ee~~ IF,Max Non-Repetitive Peak Forward Surge Current ~~ee~~ 650530 ~~ee~~ A TTCC=25˚C, t=110˚C, tP = 10 P = 10 µs, Pulseµs, Pulse ~~ee~~ Fig. 8 Ptot Power Dissipation 53.623.2 W TTCC=25˚C=110˚C Fig. 4 ~~ee eee~~ dV/dt Diode dV/dt ruggedness 200 V/ns VR=0-650V ~~eeee ee ee ee~~ ∫i[2] dt i[2] t value ~~ee~~ 23.815 A ~~ee~~[2] s TTCC=25˚C, t=110˚C, tP=10 msP=10 ms ~~ee~~ -55 to TJ , Tstg Operating Junction and Storage Temperature +175 ˚C ~~e~~ ~~**e** e ee~~ 1 Nm M3 Screw TO-220 Mounting Torque 8.8 lbf-in 6-32 Screw ~~[[ee]][[ee]] ee ee ee~~ 

1 TO-220 Mounting Torque 8.8 ~~[[ee]]~~ **1** C3D08065I Rev. D, 01-2019 - ~~[[ee]]~~ 

## **Electrical Characteristics** 

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Symbol Parameter Typ. Max. Unit Test Conditions Note<br>**----- End of picture text -----**<br>


|**Symbol**|**Parameter**|**Typ.**|**Max.**|**Unit**|**Test Conditions**|**Note**|
|---|---|---|---|---|---|---|
|VF|Forward Voltage|1.5<br>2.1|1.8<br>2.4|V|IF= 8 A  TJ=25°C<br>IF= 8 A  TJ=175°C|Fig. 1|
|IR|Reverse Current|10<br>12|51<br>204|μA|VR= 650 V  TJ=25°C<br>VR= 650 V  TJ=175°C|Fig. 2|
|QC|Total Capacitive Charge|20||nC|VR= 400 V, IF= 8A<br>d_i_/d_t_= 500 A/μs<br>TJ= 25°C|Fig. 5|
|C|Total Capacitance|395<br>37<br>32||pF|VR= 0 V, TJ= 25°C, f = 1 MHz<br>VR= 200 V, TJ= 25˚C, f = 1 MHz<br>VR= 400 V, TJ= 25˚C, f = 1 MHz|Fig. 6|
|EC|Capacitance Stored Energy|3.0||μJ|VR= 400 V|Fig. 7|



Note:This is a majority carrier diode, so there is no reverse recovery charge. 

## **Thermal Characteristics** 

|**Symbol**|**Parameter**|**Typ.**|**Unit**|**Note**|
|---|---|---|---|---|
|RθJC|Package Thermal Resistance from Junction to Case|2.8|°C/W|Fig. 9|



## **Typical Performance** 

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20 30<br>18<br>TJ = -55 °C<br>25<br>16<br>TJ = 25 °C<br>14<br>TJ = 75 °C 20<br>TJ = 175 °C<br>12<br>TJ = 125 °C TJ = 125 °C<br>10 15<br>TJ = 175 °C TJ = 75 °C<br>8<br>10 TJ [= ] 25 °C<br>6<br>TJ = -55 °C<br>4<br>5<br>2<br>0 0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 100 200 300 400 500 600 700 800 900 1000<br>Foward Voltage, V VF (V) F (V) Reverse Voltage, V VR (V) R (V)<br> (A)  (mA)<br>F RR<br>A)<br>m<br> (A)<br>F  (<br>I R<br>I<br>ward Current, I age Current, I<br>Fo Reverse Leak<br>**----- End of picture text -----**<br>


Figure 1. Forward Characteristics 

Figure 2. Reverse Characteristics 

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## **Typical Performance** 

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60 60<br>10% Duty<br>20% Duty<br>50 50<br>30% Duty<br>50% Duty<br>70% Duty<br>40 DC 40<br>30 30<br>20 20<br>10 10<br>0 0<br>25 50 75 100 125 150 175 25 50 75 100 125 150 175<br>T  ˚C T  ˚C<br>C C<br>Figure 3. Current Derating Figure 4. Power Derating<br>30 450<br>Conditions: Conditions:<br>TJ = 25 °C 400 TJ = 25 °C<br>25 Ftest = 1 MHz<br>350 Vtest = 25 mV<br>20 300<br>250<br>15<br>200<br>10 150<br>100<br>5<br>50<br>0 0<br>0 100 200 300 400 500 600 700 0 1 10 100 1000<br>Reverse Voltage, V VR (V) R (V) Reverse Voltage, V VR (V) R (V)<br> (A)<br> (W)<br>Tot<br>F(peak) P<br>I<br> (nC)<br>C<br> (nC)<br>C<br>C (pF)<br>Q<br>tive Charge, Q<br>apacitance (pF)<br>Capaci C<br>**----- End of picture text -----**<br>


Figure 5. Total Capacitance Charge vs. Reverse Voltage 

Figure 6. Capacitance vs. Reverse Voltage 

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## **Typical Performance** 

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8<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 100 200 300 400 500 600 700<br>Reverse Voltage, V VR (V) R (V)<br>J)<br>µ<br> (<br>C<br>J)<br>m<br>(<br>C<br>E<br>ored Energy, E<br>Capacitance St<br>**----- End of picture text -----**<br>


Figure 7. Capacitance Stored Energy 

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1,000<br>100 TJ = 25 °C<br>TJ = 110 °C<br>10<br>10E-6 100E-6 1E-3 10E-3<br>Time, t tp (s) p (s)<br> (A)  (A)<br>IFSM<br>FSM<br>I<br>**----- End of picture text -----**<br>


Figure 8. Non-repetitive peak forward surge current versus pulse duration (sinusoidal waveform) 

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0.5<br>1<br>0.3<br>0.1<br>0.05<br>100E-3<br>0.02<br>SinglePulse<br>0.01<br>10E-3<br>1E-3<br>1E-6 10E-6 100E-6 1E-3 10E-3 100E-3 1 10<br>T (Sec)<br>Thermal Resistance (˚C/W)<br>**----- End of picture text -----**<br>


Figure 9. Transient Thermal Impedance 

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## **Package Dimensions** 

Package TO-220-2 

|**SYMBOL**<br>**MIN(mm)**<br>**MAX(mm)**|**SYMBOL**<br>**MIN(mm)**<br>**MAX(mm)**|**SYMBOL**<br>**MIN(mm)**<br>**MAX(mm)**|
|---|---|---|
|A<br>4.42<br>4.72<br>~~es~~<br>~~ee~~|||
|A1<br>2.52<br>2.82<br>~~ee~~<br>~~es~~<br>~~ee~~|||
|b<br>0.71<br>0.91<br>~~ee~~<br>~~es~~<br>~~ee~~|||
|b1<br>1.17<br>1.37<br>~~ee~~<br>~~es~~<br>~~ee~~|||
|b2<br>1.17<br>1.67<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~|||
|c<br>0.36<br>0.46<br>~~ee~~<br>~~es~~<br>~~ee~~|||
|c1<br>1.17<br>1.37<br>~~ee~~<br>~~es~~<br>~~ee~~|||
|D<br>9.96<br>10.25<br>~~ee~~<br>~~ee~~<br>~~ee~~|||
|D1<br>13.25<br>13.65<br>~~ee~~<br>~~es~~<br>~~ee~~|||
|E<br>8.99<br>9.29<br>~~ee~~<br>~~es~~<br>~~ee~~|||
|E1<br>12.55<br>12.85<br>~~ee~~<br>~~es~~<br>~~ee~~|||
|E2<br>7.50<br>7.90<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~|||
|e1<br>4.98<br>5.18<br>~~ee~~<br>~~ee~~<br>~~ee~~|||
|F<br>2.59<br>2.89<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|||
|G<br>-<br>0.20<br>~~ee~~<br>~~ee~~<br>~~es~~<br>~~ee~~|||
|L<br>13.08<br>13.48<br>~~ee~~<br>~~es~~<br>~~ee~~|||
|L1<br>2.47<br>2.87<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~|||
|L2<br>3.20<br>3.60<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~|||
|Ø<br>~~es~~|3.79<br>~~ee~~<br>~~es~~<br>~~ee~~|3.89<br>~~es~~|



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**Recommended Solder Pad Layout** 

## TO-220-2 

**Note: Recommended soldering profiles can be found in the applications note here:** http://www.wolfspeed.com/power_app_notes/soldering 

## **Diode Model** 

VfT = VT + If * RT 

VT = 0.96 + (TJ * -1.1*10[-3] ) RT = 0.07 + (TJ * 7.4*10[-4] ) 

**Note: Tj = Diode Junction Temperature In Degrees Celsius, valid from 25°C to 175°C** 

VT RT 

## **Notes** 

- **RoHS Compliance** 

The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Wolfspeed representative or from the Product Ecology section of our website at http:// www.wolfspeed.com/power/tools-and-support/product-ecology. 

- **REACh Compliance** 

   - REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. 

- This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control systems. 

## **Related Links** 

- Cree SiC Schottky diode portfolio: http://www.wolfspeed.com/Power/Products#SiCSchottkyDiodes 

- Schottky diode Spice models: http://www.wolfspeed.com/power/tools-and-support/DIODE-model-request2 

- SiC MOSFET and diode reference designs: http://go.pardot.com/l/101562/2015-07-31/349i 

Copyright © 2019 Cree, Inc. All rights reserved. 

The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. 

Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.cree.com/power 

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