BZT55C15-GS08

Zener Single Diode, 15 V, 500 mW, SOD-80 (MiniMELF), 2 Pins, 175 °C, Surface Mount

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Manufacturer: VISHAY
Product type: Zener Single Diodes
Zener Voltage Vz Typ:15V; Power Dissipation Pd:500mW; Diode Case Style:SOD-80 (MiniMELF); Zener Tolerance ±:5%; No. of Pins:2Pins; Operating Temperature Max:175°C; Product Range:
No. of Pins: 2Pins
Product Range: BZT55
Qualification: AEC-Q101
Diode Mounting: Surface Mount
Diode Case Style: SOD-80 (MiniMELF)
Power Dissipation: 500mW
Zener Voltage Nom: 15V
Operating Temperature Max: 175°C

Delivery and price
Units per pack	7500
Price	0.02 €
Current stock	10+
Lead time	30 days

Datasheet

**BZT55-Series** ~~a~~ Vishay Semiconductors 

www.vishay.com 

## **Small Signal Zener Diodes** 

## **FEATURES** 

- Very sharp reverse characteristic 

- Low reverse current level 

- Very high stability 

- Low noise 

- AEC-Q101 qualified 

- Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC 

## **APPLICATIONS** 

## **PRIMARY CHARACTERISTICS** 

- Voltage stabilization 

|**PRIMARY CHARACTERISTICS**|**PRIMARY CHARACTERISTICS**|**PRIMARY CHARACTERISTICS**|
|---|---|---|
|**PARAMETER**|**VALUE**|**UNIT**|
|VZrange nom.|2.4 to 75|V|
|Test current IZT|2.5 to 5|mA|
|VZspecification|Pulse current||
|Int. construction|Single||



## **ORDERING INFORMATION** 

|**ORDERING INFORMATION**|**ORDERING INFORMATION**|**ORDERING INFORMATION**|**ORDERING INFORMATION**|
|---|---|---|---|
|**DEVICE NAME**|**ORDERING CODE**|**TAPED UNITS PER REEL**|**MINIMUM ORDER QUANTITY**|
|BZT55-series|BZT55-series-GS18|10 000 per 13" reel|10 000/box|
|BZT55-series|BZT55-series-GS08|2500 per 7" reel|12 500/box|



## **PACKAGE** 

|**PACKAGE**|**PACKAGE**|**PACKAGE**|**PACKAGE**|**PACKAGE**|
|---|---|---|---|---|
|**PACKAGE NAME**|**WEIGHT**|**MOLDING COMPOUND**<br>**FLAMMABILITY RATING**|**MOISTURE SENSITIVITY**<br>**LEVEL**|**SOLDERING**<br>**CONDITIONS**|
|QuadroMELF SOD-80|34 mg|UL 94 V-0|MSL level 1<br>(accordingJ-STD-020)|260 °C/10 s at terminals|



|**ABSOLUTE MAXIMUM RATINGS**(Tamb= 25 °C,unless otherwise specified)|**ABSOLUTE MAXIMUM RATINGS**(Tamb= 25 °C,unless otherwise specified)|**ABSOLUTE MAXIMUM RATINGS**(Tamb= 25 °C,unless otherwise specified)|**ABSOLUTE MAXIMUM RATINGS**(Tamb= 25 °C,unless otherwise specified)|**ABSOLUTE MAXIMUM RATINGS**(Tamb= 25 °C,unless otherwise specified)|
|---|---|---|---|---|
|**PARAMETER**|**TEST CONDITION**|**SYMBOL**|**VALUE**|**UNIT**|
|Power dissipation|RthJA 300 K/W|Ptot|500|mW|
|Zener current||IZ|PV/VZ|mA|
|Junction to ambient air|On PC board<br>50 mm x 50 mm x 1.6 mm|RthJA|500|K/W|
|Junction temperature||Tj|175|°C|
|Storage temperature range||Tstg|- 65 to + 175|°C|
|Forward voltage (max.)|IF= 200 mA|VF|1.5|V|



Document Number: 85637 

Rev. 1.7, 22-Nov-11 

**1** 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**BZT55-Series** 

www.vishay.com 

Vishay Semiconductors 

**==> picture [59 x 48] intentionally omitted <==**

|**ELECTRICAL CHARACTERISTICS**(Tamb= 25 °C,unless otherwise specified)|**ELECTRICAL CHARACTERISTICS**(Tamb= 25 °C,unless otherwise specified)|**ELECTRICAL CHARACTERISTICS**(Tamb= 25 °C,unless otherwise specified)|**ELECTRICAL CHARACTERISTICS**(Tamb= 25 °C,unless otherwise specified)|**ELECTRICAL CHARACTERISTICS**(Tamb= 25 °C,unless otherwise specified)|**ELECTRICAL CHARACTERISTICS**(Tamb= 25 °C,unless otherwise specified)|**ELECTRICAL CHARACTERISTICS**(Tamb= 25 °C,unless otherwise specified)|**ELECTRICAL CHARACTERISTICS**(Tamb= 25 °C,unless otherwise specified)|**ELECTRICAL CHARACTERISTICS**(Tamb= 25 °C,unless otherwise specified)|**ELECTRICAL CHARACTERISTICS**(Tamb= 25 °C,unless otherwise specified)|**ELECTRICAL CHARACTERISTICS**(Tamb= 25 °C,unless otherwise specified)|**ELECTRICAL CHARACTERISTICS**(Tamb= 25 °C,unless otherwise specified)|**ELECTRICAL CHARACTERISTICS**(Tamb= 25 °C,unless otherwise specified)|
|---|---|---|---|---|---|---|---|---|---|---|---|---|
|**PART NUMBER**|**ZENER VOLTAGE**<br>**RANGE(1)**|||**TEST**<br>**CURRENT**||**REVERSE LEAKAGE**<br>**CURRENT**|||**DYNAMIC**<br>**RESISTANCE**||**TEMPERATURE**<br>**COEFFICIENT**||
||**VZ at IZT1**|||**IZT1**|**IZT2**|**IR at VR**|||**ZZ at IZT1**|**ZZK at IZT2**|**TKVZ**||
|||||||**Tamb =**<br>**25 °C**|**Tamb =**<br>**150 °C**||**f = 1 kHz**||||
||**V**|||**mA**||**μA**||**V**|||**%/K**||
||**MIN.**|**NOM.**|**MAX.**||||||**MAX.**|**MAX.**|**MIN.**|**MAX.**|
|BZT55C2V4|2.28|2.4|2.56|5|1|< 50|< 100|1|< 85|< 600|- 0.09|- 0.06|
|BZT55C2V7|2.5|2.7|2.9|5|1|< 10|< 50|1|< 85|< 600|- 0.09|- 0.06|
|BZT55C3V0|2.8|3.0|3.2|5|1|< 4|< 40|1|< 90|< 600|- 0.08|- 0.05|
|BZT55C3V3|3.1|3.3|3.5|5|1|< 2|< 40|1|< 90|< 600|- 0.08|- 0.05|
|BZT55C3V6|3.4|3.6|3.8|5|1|< 2|< 40|1|< 90|< 600|- 0.08|- 0.05|
|BZT55C3V9|3.7|3.9|4.1|5|1|< 2|< 40|1|< 90|< 600|- 0.08|- 0.05|
|BZT55C4V3|4|4.3|4.6|5|1|< 1|< 20|1|< 90|< 600|- 0.06|- 0.03|
|BZT55C4V7|4.4|4.7|5|5|1|< 0.5|< 10|1|< 80|< 600|- 0.05|0.02|
|BZT55C5V1|4.8|5.1|5.4|5|1|< 0.1|< 2|1|< 60|< 550|- 0.02|0.02|
|BZT55C5V6|5.2|5.6|6|5|1|< 0.1|< 2|1|< 40|< 450|- 0.05|0.05|
|BZT55C6V2|5.8|6.2|6.6|5|1|< 0.1|< 2|2|< 10|< 200|0.03|0.06|
|BZT55C6V8|6.4|6.8|7.2|5|1|< 0.1|< 2|3|< 8|< 150|0.03|0.07|
|BZT55C7V5|7|7.5|7.9|5|1|< 0.1|< 2|5|< 7|< 50|0.03|0.07|
|BZT55C8V2|7.7|8.2|8.7|5|1|< 0.1|< 2|6.2|< 7|< 50|0.03|0.08|
|BZT55C9V1|8.5|9.1|9.6|5|1|< 0.1|< 2|6.8|< 10|< 50|0.03|0.09|
|BZT55C10|9.4|10|10.6|5|1|< 0.1|< 2|7.5|< 15|< 70|0.03|0.1|
|BZT55C11|10.4|11|11.6|5|1|< 0.1|< 2|8.2|< 20|< 70|0.03|0.11|
|BZT55C12|11.4|12|12.7|5|1|< 0.1|< 2|9.1|< 20|< 90|0.03|0.11|
|BZT55C13|12.4|13|14.1|5|1|< 0.1|< 2|10|< 26|< 110|0.03|0.11|
|BZT55C15|13.8|15|15.6|5|1|< 0.1|< 2|11|< 30|< 110|0.03|0.11|
|BZT55C16|15.3|16|17.1|5|1|< 0.1|< 2|12|< 40|< 170|0.03|0.11|
|BZT55C18|16.8|18|19.1|5|1|< 0.1|< 2|13|< 50|< 170|0.03|0.11|
|BZT55C20|18.8|20|21.2|5|1|< 0.1|< 2|15|< 55|< 220|0.03|0.11|
|BZT55C22|20.8|22|23.3|5|1|< 0.1|< 2|16|< 55|< 220|0.04|0.12|
|BZT55C24|22.8|24|25.6|5|1|< 0.1|< 2|18|< 80|< 220|0.04|0.12|
|BZT55C27|25.1|27|28.9|5|1|< 0.1|< 2|20|< 80|< 220|0.04|0.12|
|BZT55C30|28|30|32|5|1|< 0.1|< 2|22|< 80|< 220|0.04|0.12|
|BZT55C33|31|33|35|5|1|< 0.1|< 2|24|< 80|< 220|0.04|0.12|
|BZT55C36|34|36|38|5|1|< 0.1|< 2|27|< 80|< 220|0.04|0.12|
|BZT55C39|37|39|41|2.5|0.5|< 0.1|< 5|30|< 90|< 500|0.04|0.12|
|BZT55C43|40|43|46|2.5|0.5|< 0.1|< 5|33|< 90|< 600|0.04|0.12|
|BZT55C47|44|47|50|2.5|0.5|< 0.1|< 5|36|< 110|< 700|0.04|0.12|
|BZT55C51|48|51|54|2.5|0.5|< 0.1|< 10|39|< 125|< 700|0.04|0.12|
|BZT55C56|52|56|60|2.5|0.5|< 0.1|< 10|43|< 135|< 1000|0.04|0.12|
|BZT55C62|58|62|66|2.5|0.5|< 0.1|< 10|47|< 150|< 1000|0.04|0.12|
|BZT55C68|64|68|72|2.5|0.5|< 0.1|< 10|51|< 200|< 1000|0.04|0.12|
|BZT55C75|70|75|79|2.5|0.5|< 0.1|< 10|56|< 250|< 1500|0.04|0.12|



## **Notes** 

• Additional measurement of voltage group 9V1 to 75 at 95 % Vzmin.  35 nA at Tj 25 °C (1) tp  10 ms, T/tp > 1000 

Rev. 1.7, 22-Nov-11 

Document Number: 85637 

**2** 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**BZT55-Series** 

www.vishay.com 

Vishay Semiconductors 

**==> picture [59 x 48] intentionally omitted <==**

|**ELECTRICAL CHARACTERISTICS**(Tamb= 25 °C,unless otherwise specified)|**ELECTRICAL CHARACTERISTICS**(Tamb= 25 °C,unless otherwise specified)|**ELECTRICAL CHARACTERISTICS**(Tamb= 25 °C,unless otherwise specified)|**ELECTRICAL CHARACTERISTICS**(Tamb= 25 °C,unless otherwise specified)|**ELECTRICAL CHARACTERISTICS**(Tamb= 25 °C,unless otherwise specified)|**ELECTRICAL CHARACTERISTICS**(Tamb= 25 °C,unless otherwise specified)|**ELECTRICAL CHARACTERISTICS**(Tamb= 25 °C,unless otherwise specified)|**ELECTRICAL CHARACTERISTICS**(Tamb= 25 °C,unless otherwise specified)|**ELECTRICAL CHARACTERISTICS**(Tamb= 25 °C,unless otherwise specified)|**ELECTRICAL CHARACTERISTICS**(Tamb= 25 °C,unless otherwise specified)|**ELECTRICAL CHARACTERISTICS**(Tamb= 25 °C,unless otherwise specified)|**ELECTRICAL CHARACTERISTICS**(Tamb= 25 °C,unless otherwise specified)|**ELECTRICAL CHARACTERISTICS**(Tamb= 25 °C,unless otherwise specified)|
|---|---|---|---|---|---|---|---|---|---|---|---|---|
|**PART NUMBER**|**ZENER VOLTAGE**<br>**RANGE(1)**|||**TEST**<br>**CURRENT**||**REVERSE LEAKAGE**<br>**CURRENT**|||**DYNAMIC**<br>**RESISTANCE**||**TEMPERATURE**<br>**COEFFICIENT**||
||**VZ at IZT1**|||**IZT1**|**IZT2**|**IR at VR**|||**ZZ at IZT1**|**ZZK at IZT2**|**TKVZ**||
|||||||**Tamb =**<br>**25 °C**|**Tamb =**<br>**150 °C**||**f = 1 kHz**||||
||**V**|||**mA**||**μA**||**V**|||**%/K**||
||**MIN.**|**NOM.**|**MAX.**||||||**MAX.**|**MAX.**|**MIN.**|**MAX.**|
|BZT55B2V4|2.35|2.4|2.45|5|1|< 50|< 100|1|< 85|< 600|- 0.09|- 0.06|
|BZT55B2V7|2.64|2.7|2.76|5|1|< 10|< 50|1|< 85|< 600|- 0.09|- 0.06|
|BZT55B3V0|2.94|3.0|3.06|5|1|< 4|< 40|1|< 90|< 600|- 0.08|- 0.05|
|BZT55B3V3|3.24|3.3|3.36|5|1|< 2|< 40|1|< 90|< 600|- 0.08|- 0.05|
|BZT55B3V6|3.52|3.6|3.68|5|1|< 2|< 40|1|< 90|< 600|- 0.08|- 0.05|
|BZT55B3V9|3.82|3.9|3.98|5|1|< 2|< 40|1|< 90|< 600|- 0.08|- 0.05|
|BZT55B4V3|4.22|4.3|4.38|5|1|< 1|< 20|1|< 90|< 600|- 0.06|- 0.03|
|BZT55B4V7|4.6|4.7|4.8|5|1|< 0.5|< 10|1|< 80|< 600|- 0.05|0.02|
|BZT55B5V1|5|5.1|5.2|5|1|< 0.1|< 2|1|< 60|< 550|- 0.02|0.02|
|BZT55B5V6|5.48|5.6|5.72|5|1|< 0.1|< 2|1|< 40|< 450|- 0.05|0.05|
|BZT55B6V2|6.08|6.2|6.32|5|1|< 0.1|< 2|2|< 10|< 200|0.03|0.06|
|BZT55B6V8|6.66|6.8|6.94|5|1|< 0.1|< 2|3|< 8|< 150|0.03|0.07|
|BZT55B7V5|7.35|7.5|7.65|5|1|< 0.1|< 2|5|< 7|< 50|0.03|0.07|
|BZT55B8V2|8.04|8.2|8.36|5|1|< 0.1|< 2|6.2|< 7|< 50|0.03|0.08|
|BZT55B9V1|8.92|9.1|9.28|5|1|< 0.1|< 2|6.8|< 10|< 50|0.03|0.09|
|BZT55B10|9.8|10|10.2|5|1|< 0.1|< 2|7.5|< 15|< 70|0.03|0.1|
|BZT55B11|10.78|11|11.22|5|1|< 0.1|< 2|8.2|< 20|< 70|0.03|0.11|
|BZT55B12|11.76|12|12.24|5|1|< 0.1|< 2|9.1|< 20|< 90|0.03|0.11|
|BZT55B13|12.74|13|13.26|5|1|< 0.1|< 2|10|< 26|< 110|0.03|0.11|
|BZT55B15|14.7|15|15.3|5|1|< 0.1|< 2|11|< 30|< 110|0.03|0.11|
|BZT55B16|15.7|16|16.3|5|1|< 0.1|< 2|12|< 40|< 170|0.03|0.11|
|BZT55B18|17.64|18|18.36|5|1|< 0.1|< 2|13|< 50|< 170|0.03|0.11|
|BZT55B20|19.6|20|20.4|5|1|< 0.1|< 2|15|< 55|< 220|0.03|0.11|
|BZT55B22|21.55|22|22.45|5|1|< 0.1|< 2|16|< 55|< 220|0.04|0.12|
|BZT55B24|23.5|24|24.5|5|1|< 0.1|< 2|18|< 80|< 220|0.04|0.12|
|BZT55B27|26.4|27|27.6|5|1|< 0.1|< 2|20|< 80|< 220|0.04|0.12|
|BZT55B30|29.4|30|30.6|5|1|< 0.1|< 2|22|< 80|< 220|0.04|0.12|
|BZT55B33|32.4|33|33.6|5|1|< 0.1|< 2|24|< 80|< 220|0.04|0.12|
|BZT55B36|35.3|36|36.7|5|1|< 0.1|< 2|27|< 80|< 220|0.04|0.12|
|BZT55B39|38.2|39|39.8|2.5|1|< 0.1|< 5|30|< 90|< 500|0.04|0.12|
|BZT55B43|42.1|43|43.9|2.5|0.5|< 0.1|< 5|33|< 90|< 600|0.04|0.12|
|BZT55B47|46.1|47|47.9|2.5|0.5|< 0.1|< 5|36|< 110|< 700|0.04|0.12|
|BZT55B51|50|51|52|2.5|0.5|< 0.1|< 10|39|< 125|< 700|0.04|0.12|
|BZT55B56|54.9|56|57.1|2.5|0.5|< 0.1|< 10|43|< 135|< 1000|0.04|0.12|
|BZT55B62|60.8|62|63.2|2.5|0.5|< 0.1|< 10|47|< 150|< 1000|0.04|0.12|
|BZT55B68|66.6|68|69.4|2.5|0.5|< 0.1|< 10|51|< 200|< 1000|0.04|0.12|
|BZT55B75|73.5|75|76.5|2.5|0.5|< 0.1|< 10|56|< 250|< 1500|0.04|0.12|



## **Notes** 

• Additional measurement of voltage group 9V1 to 75 at 95 % Vzmin.  35 nA at Tj 25 °C (1) tp  10 ms, T/tp > 1000 

Rev. 1.7, 22-Nov-11 

Document Number: 85637 

**3** 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**BZT55-Series** 

Vishay Semiconductors 

**==> picture [59 x 48] intentionally omitted <==**

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www.vishay.com<br>**----- End of picture text -----**<br>


## **BASIC CHARACTERISTICS** (Tamb = 25 °C, unless otherwise specified) 

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**----- Start of picture text -----**<br>
600<br>500<br>400<br>300<br>200<br>100<br>0<br>0 40 80 120 160 200<br>95 9602 Tamb - Ambient Temperature (°C)<br>Total Power Dissipation vs. Ambient Temperature<br>1000<br>T j  = 25 °C<br>100<br>I Z  = 5 mA<br>10<br>1<br>0 5 10 15 20 25<br>95 9598 VZ - Z-Voltage (V)<br> - Total Power Dissipation (mW)<br>tot<br>P<br> - Voltage Change (mV)<br>Z<br>V<br>**----- End of picture text -----**<br>


Fig. 1 - Total Power Dissipation vs. Ambient Temperature 

Fig. 2 - Typical Change of Working Voltage under Operating Conditions at Tamb=25°C 

**==> picture [163 x 157] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.3<br>VZtn = VZt/VZ (25 °C)<br>1.2<br>TKVZ = 10 x 10 [-4] /K<br>8 x 10 [-4] /K<br>6 x 10 [-4] /K<br>1.1<br>4 x 10 [-4] /K<br>2 x 10 [-4] /K<br>1.0 0<br>- 2 x 10 [-4] /K<br>0.9 - 4 x 10 [-4] /K<br>0.8<br>- 60 0 60 120 180 240<br>95 9599 Tj - Junction Temperature (°C)<br> - Relative Voltage Change<br>Ztn<br>V<br>**----- End of picture text -----**<br>


Fig. 3 - Typical Change of Working Voltage vs. Junction Temperature 

**==> picture [168 x 557] intentionally omitted <==**

**----- Start of picture text -----**<br>
15<br>10<br>5<br> IZ = 5 mA<br>0<br>- 5<br>0 10 20 30 40 50<br>95 9600 VZ - Z-Voltage (V)<br>Temperature Coefficient of VZ vs. Z-VoltageZ vs. Z-Voltage vs. Z-Voltage<br>200<br>150<br>VR = 2 V<br>Tj = 25 °C<br>100<br>50<br>0<br>0 5 10 15 20 25<br>95 9601 VZ - Z-Voltage (V)<br> Fig. 5 - Diode Capacitance vs. Z-Voltage<br>100<br>10<br>T j  = 25 °C<br>1<br>0.1<br>0.01<br>0.001<br>0 0.2 0.4 0.6 0.8 1.0<br>95 9605 VF - Forward Voltage (V)<br>/K)<br>-4<br> (10<br>Z<br>of V<br> - Temperature Coefficient<br>VZ<br>TK<br> - Diode Capacitance (pF)<br>D<br>C<br> - Forward Current (mA)<br>IF<br>**----- End of picture text -----**<br>


Fig. 4 - Temperature Coefficient of VZ vs. Z-VoltageZ vs. Z-Voltage vs. Z-Voltage 

Fig. 6 - Forward Current vs. Forward Voltage 

Rev. 1.7, 22-Nov-11 

Document Number: 85637 

**4** 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**BZT55-Series** 

www.vishay.com 

Vishay Semiconductors 

**==> picture [59 x 48] intentionally omitted <==**

**==> picture [164 x 350] intentionally omitted <==**

**----- Start of picture text -----**<br>
100<br>80<br>Ptot = 500 mW<br>Tamb = 25 °C<br>60<br>40<br>20<br>0<br>0 4 6 8 12 20<br>95 9604 VZ - Z-Voltage (V)<br> Fig. 7 - Z-Current vs. Z-Voltage<br>50<br>40 P tot  = 500 mW<br>Tamb = 25 °C<br>30<br>20<br>10<br>0<br>15 20 25 30 35<br>95 9607 VZ - Z-Voltage (V)<br> - Z-Current (mA)<br>IZ<br> - Z-Current (mA)<br>IZ<br>**----- End of picture text -----**<br>


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1000<br>IZ = 1 mA<br>100<br>5 mA<br>10 10 mA<br>1 Tj = 25 °C<br>0 5 10 15 20 25<br>95 9606 VZ - Z-Voltage (V)<br>)Ω<br> - Differential Z-Resistance (<br>rZ<br>**----- End of picture text -----**<br>


Fig. 9 - Differential Z-Resistance vs. Z-Voltage 

Fig. 8 - Z-Current vs. Z-Voltage 

**==> picture [339 x 177] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000<br>t p /T = 0.5<br>100<br>t p /T = 0.2<br>Single Pulse RthJA = 300 K/W<br>T = Tjmax - Tamb<br>10 tp/T = 0.01<br>t p /T = 0.1 t p /T = 0.02<br>tp/T = 0.05 i ZM  = (- V Z  + (V Z2  + 4r zj  x T/Z thp )  1/2 )/(2r zj )<br>1<br>10 [-1] 10 [0] 10 [1] 10 [2]<br>tp - Pulse Length (ms) 95 9603<br> Fig. 10 - Thermal Response<br> - Thermal Resistance for Pulse Cond. (KW)<br>thp<br>Z<br>**----- End of picture text -----**<br>


Rev. 1.7, 22-Nov-11 

Document Number: 85637 

**5** 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**BZT55-Series** 

**==> picture [59 x 48] intentionally omitted <==**

www.vishay.com 

## Vishay Semiconductors 

## **PACKAGE DIMENSIONS** in millimeters (inches): **QuadroMELF SOD-80** 

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Cathode identification<br>> R3 (R0.118)<br>glass<br>0.47 (0.019) max.<br>3.7 (0.146)<br>3.3 (0.130)<br>The gap between plug and glass can<br>be either on cathode or anode side<br>Foot print recommendation: 2.5 (0.098) max.<br>1.25 (0.049) min.<br>5 (0.197) ref.<br>96 12071<br>1.7 (0.067)glass<br>1.6 (0.063) 1.4 (0.055)<br>2 (0.079) min.<br>**----- End of picture text -----**<br>


Rev. 1.7, 22-Nov-11 

Document Number: 85637 

**6** 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**Legal Disclaimer Notice** Vishay 

www.vishay.com 

**==> picture [59 x 48] intentionally omitted <==**

## **Disclaimer** 

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product.  To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. 

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications.  Such statements are not binding statements about the suitability of products for a particular application.  It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time.  All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts.  Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. 

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. 

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay.  Product names and markings noted herein may be trademarks of their respective owners. 

Revision: 13-Jun-16 

Document Number: 91000 

**1**

Updated at April 11, 2026

Vishay is a global leader in the manufacturing of discrete semiconductors and passive electronic components. Renowned for its exceptional quality and engineering expertise, the company produces highly reliable solutions that drive innovation across the industrial, automotive, telecommunications, and consumer electronics markets. From advanced factory automation to vehicle electrification, Vishay components provide the foundational building blocks for modern electronic design. The company's expansive portfolio is heavily focused on efficient power management, signal routing, and energy storage. Within its passive component lineup, Vishay is recognized for its extensive array of high-performance capacitors, including robust aluminium electrolytic, film, and polymer variants, alongside highly efficient power inductors. In the realm of discrete semiconductors, Vishay is a premier manufacturer of single and dual MOSFETs, as well as a vast selection of Schottky, Zener, and fast-recovery rectifier diodes designed for demanding power applications. Furthermore, Vishay delivers industry-leading circuit protection and thermal management solutions. With a broad offering of transient voltage suppressors (TVS diodes) and temperature-sensing NTC thermistors, these components are engineered to safeguard sensitive circuitry against both electrical and thermal overstress. By combining this vital mix of advanced discretes and passives, Vishay enables engineers to develop robust, space-saving, and highly resilient electronic systems.

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