BZG03C15G
Zener Single Diode, TVS, 15 V, 1.5 W, DO-214AC (SMA), 2 Pins, 150 °C
- Manufacturer: ONSEMI
- Product type: Zener Single Diodes
- Zener Voltage Vz Typ:15V; Power Dissipation Pd:1.5W; Diode Case Style:DO-214AC; Zener Tolerance ±:-; No. of Pins:2Pins; Operating Temperature Max:150°C; Product Range:BZG03 Series; Automotive
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 2Pins
- Product Range: BZG03
- Qualification: -
- Diode Case Style: DO-214AC (SMA)
- Power Dissipation: 1.5W
- Zener Voltage Nom: 15V
- Operating Temperature Max: 150°C
| Delivery and price | |
|---|---|
| Units per pack | 3000 |
| Price | 0.124 € |
| Current stock | 1000+ |
| Lead time | 30 days |
## Voltage Regulators, Peak Power Zener Surge Rated, 600 Watt ## BZG03C15 Series The SMA series is supplied in ON Semiconductor’s exclusive, cost-effective, highly reliable SURMETIC package and is ideally suited for use in communication systems, automotive, numerical controls, process controls, medical equipment, business machines, power supplies and many other industrial/consumer applications. This new line of 1.5 watt Zener diodes offers the following advantages: ## **Specification Features** ## **www.onsemi.com** **PLASTIC SURFACE MOUNT ZENER VOLTAGE REGULATORS 600 WATTS PEAK POWER** - Standard Zener Breakdown Voltage − 15 V to 150 V - Peak Power 600 Watts @ 100 s - • " - ESD Rating of Class 3 (> 16 KV) per Human Body Model - Response Time is Typically < 1.0 ns - Flat Handling Surface for Accurate Placement - Package Design for Top Slide or Bottom Circuit Board Mounting - Low Profile Package - These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ## **Mechanical Characteristics** > **CASE:** Void-free, transfer-molded plastic **FINISH:** All external surfaces are corrosion resistant and leads are readily solderable ## **MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:** 260°C for 10 Seconds **POLARITY:** Cathode indicated by molded polarity notch or polarity band **MOUNTING POSITION:** Any **==> picture [135 x 225] intentionally omitted <==** **----- Start of picture text -----**<br> CATHODE ANODE<br>SMA<br>CASE 403D<br>+S<br>MARKING DIAGRAM<br>XXX<br>AYWW<br>XXX = Specific Device Code<br>= (See Table on Page 2)<br>A = Assembly Location<br>Y = Year<br>WW = Work Week<br>= Pb−Free Package<br>**----- End of picture text -----**<br> ## **ORDERING INFORMATION** |**Device**|**Package**|**Shipping**†| |---|---|---| |BZG03C15G|SMA<br>(Pb−Free)|5000/Tape & Reel| |BZG03C150G|SMA<br>(Pb−Free)|5000/Tape & Reel| - †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: **1** © Semiconductor Components Industries, LLC, 2005 **September, 2019 − Rev. 5** **BZG03C15/D** **BZG03C15 Series** ## **MAXIMUM RATINGS** |**MAXIMUM RATINGS**|||| |---|---|---|---| |**Rating**|**Symbol**|**Value**|**Unit**| |Peak Power Dissipation (Note 1) @ TL= 25°C, tP= 100�s|PZSM|600|W| |DC Power Dissipation @ TL= 75°C<br>Measured Zero Lead Length (Note 2)<br>Derate Above 75°C<br>Thermal Resistance, Junction−to−Lead|PD<br>R�JL|1.5<br>20<br>50|W<br>mW/°C<br>°C/W| |Forward Surge Current (Note 3) @ TA= 25°C|IFSM|40|A| |Operating and Storage Temperature Range|TJ, Tstg|−65 to +150|°C| Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. 100 � s, non−repetitive square pulse 2. 1 in. square copper pad, FR−4 board 3. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum **==> picture [195 x 181] intentionally omitted <==** **----- Start of picture text -----**<br> I<br>IF<br>VC VBR VRWM<br>V<br>IR VF<br>IT<br>IPP<br>Uni−Directional Diode<br>**----- End of picture text -----**<br> |**SYMBOLS DEFINITIONS**|**SYMBOLS DEFINITIONS**| |---|---| |**Symbol**|**Parameter**| |IPP|Maximum Reverse Peak Pulse Current| |VC|Clamping Voltage @ IPP| |VRWM|Working Peak Reverse Voltage| |IR|Maximum Reverse Leakage Current @ VRWM| |VBR|Breakdown Voltage @ IT| |IT|Test Current| |IF|Forward Current| |VF|Forward Voltage @ IF| ## **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted, VF = 1.2 V Max. @ IF = 0.5 A for all types) |**Device***|**Device**<br>**Marking**|**VRWM**<br>(Note 4)|**IR @ VRWM**|**Breakdown Voltage**|**Breakdown Voltage**|**Breakdown Voltage**|**Breakdown Voltage**|**Zzt **|**@ IT**| |---|---|---|---|---|---|---|---|---|---| |||||**VBR(V)**(Note 5)|||**@ IT**|**Typ**|**Max**| |||**Volts**|**�A**|**Min**|**Nom**|**Max**|**mA**|**�**|**�**| |BZG03C15, G|G15|11|1|13.8|15.0|15.6|50|5.0|10.0| |BZG03C150, G|G150|110|1|138|150|156|5|130|300| 4. A transient suppressor is normally selected according to the working peak reverse voltage (VRWM), which should be equal to or greater than the DC or continuous peak operating voltage level 5. VBR measured at pulse test current IT at an ambient temperature of 25 ° C - *The “G’’ suffix indicates Pb−Free package available. **www.onsemi.com** **2** **BZG03C15 Series** ## **RATING AND TYPICAL CHARACTERISTIC CURVES** **==> picture [244 x 384] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>NONREPETITIVE<br>PULSE WAVEFORM<br>SHOWN IN FIGURE 2.<br>10 T A = 25°C<br>1<br>0.1<br>10 [-4] 0.001 0.01 0.1 1 10<br>tP, PULSE WIDTH (ms)<br>Figure 1. Pulse Rating Curve<br>120<br>10 x 1000 WAVEFORM<br>100 AS DEFINED BY R.E.A.<br>80<br>60<br>40<br>20<br>0<br>0 40 80 120 160 200<br>TA, AMBIENT TEMPERATURE (°C)<br>, PEAK POWER (kW)<br>Ppk<br>PEAK POWER OR CURRENT<br>PEAK PULSE DERATING IN % OF<br>**----- End of picture text -----**<br> **Figure 2. Pulse Derating Curve** **==> picture [241 x 381] intentionally omitted <==** **----- Start of picture text -----**<br> 10,000<br>T J = 25°C<br>f = 1 MHz<br>MEASURED AT Vsig = 50 mVp-p<br>ZERO BIAS<br>1,000<br>MEASURED AT<br>100<br>STAND-OFF<br>VOLTAGE, VWM<br>10<br>1 2 5 10 20 50 100 200<br>V(BR), BREAKDOWN VOLTAGE (VOLTS)<br>Figure 3. Typical Junction Capacitance<br>6<br>5<br>4<br>3 @ TL = 75 ° C<br>PD = 1.5 W<br>2<br>@ TA = 25 ° C<br>1 PD = 0.5 W<br>0<br>0 25 50 75 100 125 150<br>T, TEMPERATURE (°C)<br>C, CAPACITANCE (pF)<br>PD, MAXIMUM POWER DISSIPATION (WATTS)<br>**----- End of picture text -----**<br> **Figure 4. Steady State Power Derating** SURMETIC is a trademark of Semiconductor Components Industries, LLC. **www.onsemi.com** **3** MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** DATE 22 OCT 2021 ## **SMA** **==> picture [81 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> STYLE 1 STYLE 2<br>**----- End of picture text -----**<br> CASE 403D ISSUE J ## **SCALE 1:1** **==> picture [161 x 18] intentionally omitted <==** **----- Start of picture text -----**<br> STYLE 1: STYLE 2:<br>PIN 1. CATHODE (POLARITY BAND) NO POLARITY<br>2. ANODE<br>**----- End of picture text -----**<br> ## **GENERIC** ## **MARKING DIAGRAM*** **==> picture [128 x 58] intentionally omitted <==** **----- Start of picture text -----**<br> xxxx xxxx<br>AYWW � AYWW �<br>STYLE 1 STYLE 2<br>**----- End of picture text -----**<br> xxxx = Specific Device Code A = Assembly Location Y = Year WW = Work Week � = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ � ”, may or may not be present. Some products may not follow the Generic Marking. ## **DOCUMENT NUMBER: 98AON04079D** **DESCRIPTION: SMA** Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **PAGE 1 OF 1** **onsemi** and are trademarks of Semiconductor Components Industries, LLC dba **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others. www.onsemi.com © Semiconductor Components Industries, LLC, 2019 **onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** ’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. ## **PUBLICATION ORDERING INFORMATION** **LITERATURE FULFILLMENT** : **TECHNICAL SUPPORT Email Requests to:** orderlit@onsemi.com **North American Technical Support: Europe, Middle East and Africa Technical Support:** Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 00421 33 790 2910 **onsemi Website:** www.onsemi.com Phone: 011 421 33 790 2910 For additional information, please contact your local Sales Representative ◊ **==> picture [232 x 43] intentionally omitted <==**
Updated at April 28, 2026
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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