BZD27C11P-GS08

Zener Single Diode, 11 V, 800 mW, SMD, 2 Pins, 150 °C, Surface Mount

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Manufacturer: VISHAY
Product type: Zener Single Diodes
Zener Voltage Vz Typ:11V; Power Dissipation Pd:800mW; Diode Case Style:SMD; Zener Tolerance ±:-; No. of Pins:2Pins; Operating Temperature Max:150°C; Product Range:BZD27 Series; Automotive Qualifi
No. of Pins: 2Pins
Product Range: BZD27
Qualification: -
Diode Mounting: Surface Mount
Diode Case Style: SMD
Power Dissipation: 800mW
Zener Voltage Nom: 11V
Operating Temperature Max: 150°C

Delivery and price
Units per pack	20000
Price	0.065 €
Current stock	10+
Lead time	30 days

Datasheet

**BZD27C3V6P to BZD27C200P** 

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## **Vishay Semiconductors** 

## **Zener Diodes with Surge Current Specification** 

## **Features** 

- Sillicon Planar Zener Diodes 

- Low profile surface-mount package 

e3 

- Zener and surge current specification 

- Low leakage current 

- Excellent stability 

- High temperature soldering: 260 °C/10 sec. at terminals 

- Lead (Pb)-free component 

- Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 

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17249<br>**----- End of picture text -----**<br>


## **Mechanical Data** 

**Case:** JEDEC DO-219AB (SMF[®] ) Plastic case **Weight:** approx. 15 mg 

## **Packaging codes/options:** 

GS18 / 10 k per 13 " reel, (8 mm tape), 50 k/box GS08 / 3 k per 7 " reel, (8 mm tape), 30 k/box 

## **Absolute Maximum Ratings** 

Tamb = 25 °C, unless otherwise specified 

|Parameter|Test condition|Symbol|Value|Unit|
|---|---|---|---|---|
|Power dissipation|TL= 80 °C|Ptot|2.3|W|
||TA= 25 °C|Ptot|0.81)|W|
|Non-repetitive peak pulse power<br>dissipation|100µs square pulse2)|PZSM|300|W|
||10/1000µs waveform (BZD27-<br>C7V5P to BZD27-C100P)2)|PRSM|150|W|
||10/1000µs waveform (BZD27-<br>C110P to BZD27-C200P)2)|PRSM|100|W|



> 1) Mounted on epoxy-glass PCB with 3 x 3 mm Cu pads ( ≥ 40 µ m thick) 

- 2) TJ = 25 °C prior to surge 

## **Thermal Characteristics** 

Tamb = 25 °C, unless otherwise specified 

|Parameter|Test condition|Symbol|Value|Unit|
|---|---|---|---|---|
|Thermal resistance junction to ambient air1)||RthJA|180|K/W|
|Thermal resistance junction to lead||RthJL|30|K/W|
|Maximum junction temperature||Tj|150|°C|
|Storage temperature range||TS|- 55 to + 150|°C|



- 1) Mounted on epoxy-glass PCB with 3 x 3 mm Cu pads ( ≥ 40 µ m thick) 

## **Electrical Characteristics** 

Tamb = 25 °C, unless otherwise specified 

|Parameter|Test condition|Symbol|Min|Typ.|Max|Unit|
|---|---|---|---|---|---|---|
|Forward voltage|IF= 0.2 A|VF|||1.2|V|



Document Number 85810 Rev. 1.8, 13-Apr-05 

www.vishay.com 

1 

**BZD27C3V6P to BZD27C200P** 

## **Vishay Semiconductors** 

**==> picture [60 x 50] intentionally omitted <==**

## **Electrical Characteristics** 

When used as voltage regulator diodes (TJ = 25 °C unless otherwise noted) 

|Partnumber|Marking<br>Code|Working Voltage1)|Working Voltage1)|Differential<br>Resistance|Differential<br>Resistance|Temperature<br>Coefficient|Temperature<br>Coefficient|Test<br>Current|Reverse Current at<br>Reverse Voltage|Reverse Current at<br>Reverse Voltage|
|---|---|---|---|---|---|---|---|---|---|---|
|||VZ@ IZT||rdif@ IZ||αZ@ IZ||IZT|IR|VR|
|||V||Ω||%/°C||mA|µA|V|
|||min|max|typ|max|min|max||max||
|BZD27C3V6P|D0|3.4|3.8|4|8|-0.14|-0.04|100|100|1|
|BZD27C3V9P|D1|3.7|4.1|4|8|-0.14|-0.04|100|50|1|
|BZD27C4V3P|D2|4|4.6|4|7|-0.12|-0.02|100|25|1|
|BZD27C4V7P|D3|4.4|5|3|7|-0.1|0|100|10|1|
|BZD27C5V1P|D4|4.8|5.4|3|6|-0.08|0.02|100|5|1|
|BZD27C5V6P|D5|5.2|6|2|4|-0.04|0.04|100|10|2|
|BZD27C6V2P|D6|5.8|6.6|2|3|-0.01|0.06|100|5|2|
|BZD27C6V8P|D7|6.4|7.2|1|3|0|0.07|100|10|3|
|BZD27C7V5P|D8|7|7.9|1|2|0|0.07|100|50|3|
|BZD27C8V2P|D9|7.7|8.7|1|2|0.03|0.08|100|10|3|
|BZD27C9V1P|E0|8.5|9.6|2|4|0.03|0.08|50|10|5|
|BZD27C10P|E1|9.4|10.6|2|4|0.05|0.09|50|7|7.5|
|BZD27C11P|E2|10.4|11.6|4|7|0.05|0.1|50|4|8.2|
|BZD27C12P|E3|11.4|12.7|4|7|0.05|0.1|50|3|9.1|
|BZD27C13P|E4|12.4|14.1|5|10|0.05|0.1|50|2|10|
|BZD27C15P|E5|13.8|15.6|5|10|0.05|0.1|50|1|11|
|BZD27C16P|E6|15.3|17.1|6|15|0.06|0.11|25|1|12|
|BZD27C18P|E7|16.8|19.1|6|15|0.06|0.11|25|1|13|
|BZD27C20P|E8|18.8|21.2|6|15|0.06|0.11|25|1|15|
|BZD27C22P|E9|20.8|23.3|6|15|0.06|0.11|25|1|16|
|BZD27C24P|F0|22.8|25.6|7|15|0.06|0.11|25|1|18|
|BZD27C27P|F1|25.1|28.9|7|15|0.06|0.11|25|1|20|
|BZD27C30P|F2|28|32|8|15|0.06|0.11|25|1|22|
|BZD27C33P|F3|31|35|8|15|0.06|0.11|25|1|24|
|BZD27C36P|F4|34|38|21|40|0.06|0.11|10|1|27|
|BZD27C39P|F5|37|41|21|40|0.06|0.11|10|1|30|
|BZD27C43P|F6|40|46|24|45|0.07|0.12|10|1|33|
|BZD27C47P|F7|44|50|24|45|0.07|0.12|10|1|36|
|BZD27C51P|F8|48|54|25|60|0.07|0.12|10|1|39|
|BZD27C56P|F9|52|60|25|60|0.07|0.12|10|1|43|
|BZD27C62P|G0|58|66|25|80|0.08|0.13|10|1|47|
|BZD27C68P|G1|64|72|25|80|0.08|0.13|10|1|51|
|BZD27C75P|G2|70|79|30|100|0.08|0.13|10|1|56|
|BZD27C82P|G3|77|87|30|100|0.08|0.13|10|1|62|
|BZD27C91P|G4|85|96|60|200|0.08|0.13|5|1|68|
|BZD27C100P|G5|94|106|60|200|0.09|0.13|5|1|75|
|BZD27C110P|G6|104|116|80|250|0.09|0.13|5|1|82|
|BZD27C120P|G7|114|127|80|250|0.09|0.13|5|1|91|
|BZD27C130P|G8|124|141|110|300|0.09|0.13|5|1|100|
|BZD27C150P|G9|138|156|130|300|0.09|0.13|5|1|110|
|BZD27C160P|H0|153|171|150|350|0.09|0.13|5|1|120|
|BZD27C180P|H1|168|191|180|400|0.09|0.13|5|1|130|
|BZD27C200P|H2|188|212|200|500|0.09|0.13|5|1|150|



> 1) Pulse test: tp ≤ 5 ms. 

www.vishay.com 2 

Document Number 85810 Rev. 1.8, 13-Apr-05 

**BZD27C3V6P to BZD27C200P** 

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## **Vishay Semiconductors** 

## **Electrical Characteristics** 

When used as protection diodes (TJ = 25 °C unless otherwise noted) 

|Partnumber|Rev.<br>Breakdown<br>Voltage|Test<br>Current|Temperature Coefficient|Temperature Coefficient|Clamping Voltage|Clamping Voltage|Reverse Current at<br>Stand-Off Voltage|Reverse Current at<br>Stand-Off Voltage|
|---|---|---|---|---|---|---|---|---|
||V(BR)Rat<br>Itest|Itest|αZ@ Itest||VC|at IRSM<br>1)|IR|at VWM|
||V|mA|%/°C||V|A|µA|V|
||min||min|max|max||max||
|BZD27C7V5P|7|100|0|0.07|11.3|13.3|1500|6.2|
|BZD27C8V2P|7.7|100|0.03|0.08|12.3|12.2|1200|6.8|
|BZD27C9V1P|8.5|50|0.03|0.08|13.3|11.3|100|7.5|
|BZD27C10P|9.4|50|0.05|0.09|14.8|10.1|20|8.2|
|BZD27C11P|10.4|50|0.05|0.1|15.7|9.6|5|9.1|
|BZD27C12P|11.4|50|0.05|0.1|17|8.8|5|10|
|BZD27C13P|12.4|50|0.05|0.1|18.9|7.9|5|11|
|BZD27C15P|13.8|50|0.05|0.1|20.9|7.2|5|12|
|BZD27C16P|15.3|25|0.06|0.11|22.9|6.6|5|13|
|BZD27C18P|16.8|25|0.06|0.11|25.6|5.9|5|15|
|BZD27C20P|18.8|25|0.06|0.11|28.4|5.3|5|16|
|BZD27C22P|20.8|25|0.06|0.11|31|4.8|5|18|
|BZD27C24P|22.8|25|0.06|0.11|33.8|4.4|5|20|
|BZD27C27P|25.1|25|0.06|0.11|38.1|3.9|5|22|
|BZD27C30P|28|25|0.06|0.11|42.2|3.6|5|24|
|BZD27C33P|31|25|0.06|0.11|46.2|3.2|5|27|
|BZD27C36P|34|10|0.06|0.11|50.1|3|5|30|
|BZD27C39P|37|10|0.06|0.11|54.1|2.8|5|33|
|BZD27C43P|40|10|0.07|0.12|60.7|2.5|5|36|
|BZD27C47P|44|10|0.07|0.12|65.5|2.3|5|39|
|BZD27C51P|48|10|0.07|0.12|70.8|2.1|5|43|
|BZD27C56P|52|10|0.07|0.12|78.6|1.9|5|47|
|BZD27C62P|58|10|0.08|0.13|86.5|1.7|5|51|
|BZD27C68P|64|10|0.08|0.13|94.4|1.6|5|56|
|BZD27C75P|70|10|0.08|0.13|103.5|1.5|5|62|
|BZD27C82P|77|10|0.08|0.13|114|1.3|5|68|
|BZD27C91P|85|5|0.09|0.13|126|1.2|5|75|
|BZD27C100P|94|5|0.09|0.13|139|1.1|5|82|
|BZD27C110P|104|5|0.09|0.13|139|0.72|5|91|
|BZD27C120P|114|5|0.09|0.13|152|0.65|5|100|
|BZD27C130P|124|5|0.09|0.13|169|0.59|5|110|
|BZD27C150P|138|5|0.09|0.13|187|0.53|5|120|
|BZD27C160P|153|5|0.09|0.13|205|0.48|5|130|
|BZD27C180P|168|5|0.09|0.13|229|0.43|5|150|
|BZD27C200P|188|5|0.09|0.13|254|0.39|5|160|



> 1) Non-repetitive peak reverse current in accordance with "IEC 60-1, Section 8" (10/1000 µ s pulse); see Fig. 5. 

Document Number 85810 Rev. 1.8, 13-Apr-05 

www.vishay.com 

3 

**BZD27C3V6P to BZD27C200P** 

## **Vishay Semiconductors** 

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## **Typical Characteristics (Tamb = 25** ° **C unless otherwise specified)** 

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**----- Start of picture text -----**<br>
10.00<br>Typ. VF Max. VF<br>1.00<br>0.10<br>0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6<br>17411 VF – Forward Voltage ( V )<br>I    – Forward Current ( A )F<br>**----- End of picture text -----**<br>


Figure 1. Forward Current vs. Forward Voltage 

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160<br>140<br>120<br>100<br>80<br>60<br>40<br>20<br>0<br>0 25 50 75 100 125 150 175 200<br>17414 VZnom – Zener Voltage ( V )<br>RSM<br>P      –Max. Pulse Power Dissipation ( W )<br>**----- End of picture text -----**<br>


Figure 4. Maximum Pulse Power Dissipation vs. Zener Voltage 

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**----- Start of picture text -----**<br>
10000<br>C5V1P C6V8P C12P C18P<br>1000<br>100<br>C27P<br>C51P<br>C200P<br>10<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0<br>17412 VR – Reverse Voltage (V)<br>D<br>C   – Typ. Junction Capacitance ( pF )<br>**----- End of picture text -----**<br>


Figure 2. Typ. Diode Capacitance vs. Reverse Voltage 

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**----- Start of picture text -----**<br>
IRSM<br>(%)<br>100 t1 = 10 µs<br>90 t2 = 1000 µ s<br>50<br>10<br>t<br>t1<br>17415 t2<br>**----- End of picture text -----**<br>


Figure 5. Non-Repetitive Peak Reverse Current Pulse Definition 

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**----- Start of picture text -----**<br>
3.0<br>tie point temperature<br>2.5<br>2.0<br>1.5<br>1.0 ambient temperature<br>0.5<br>0.0<br>0 25 50 75 100 125 150<br>17413 Tamb – Ambient Temperature ( �C )<br>P  –Power Dissipation ( W )tot<br>**----- End of picture text -----**<br>


Figure 3. Power Dissipation  vs. Ambient Temperature 

www.vishay.com 4 

Document Number 85810 Rev. 1.8, 13-Apr-05 

**BZD27C3V6P to BZD27C200P** 

**==> picture [60 x 50] intentionally omitted <==**

## **Vishay Semiconductors** 

## **Package Dimensions in mm (Inches)** 

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**----- Start of picture text -----**<br>
0.85 (0.033)<br>0.35 (0.014)<br>3.9 (0.152)<br>3.5 (0.137)<br>5<br>0.16 (0.006)<br>0.99 (0.039)<br>0.97 (0.038)<br>5 Z<br>Cathode Band<br>Detail Z<br>enlarged Top View<br>1.9 (0.074) 1.2 (0.047)<br>1.7 (0.066) 0.8 (0.031)<br>0.10 max<br>2.9 (0.113)<br>2.7 (0.105)<br>ISO Method E<br>Mounting Pad Layout<br>1.6 (0.062) 1.3 (0.051)<br>1.4 (0.055)<br>17247<br>**----- End of picture text -----**<br>


Document Number 85810 Rev. 1.8, 13-Apr-05 

www.vishay.com 

5 

**BZD27C3V6P to BZD27C200P** 

## **Vishay Semiconductors** 

**==> picture [60 x 50] intentionally omitted <==**

## **Blistertape for SMF** 

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**----- Start of picture text -----**<br>
PS<br>18513<br>**----- End of picture text -----**<br>


www.vishay.com 6 

Document Number 85810 Rev. 1.8, 13-Apr-05 

**BZD27C3V6P to BZD27C200P** 

**Vishay Semiconductors** 

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## **Ozone Depleting Substances Policy Statement** 

It is the policy of Vishay Semiconductor GmbH to 

1. Meet all present and future national and international statutory requirements. 

2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. 

It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). 

The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. 

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 

2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. 

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. 

We reserve the right to make changes to improve technical design and may do so without further notice. 

Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. 

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany 

Document Number 85810 Rev. 1.8, 13-Apr-05 

www.vishay.com 

7 

**Legal Disclaimer Notice** 

Vishay 

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## **Notice** 

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. 

Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. 

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. 

Document Number: 91000 Revision: 08-Apr-05 

www.vishay.com 1

Updated at April 11, 2026

Vishay is a global leader in the manufacturing of discrete semiconductors and passive electronic components. Renowned for its exceptional quality and engineering expertise, the company produces highly reliable solutions that drive innovation across the industrial, automotive, telecommunications, and consumer electronics markets. From advanced factory automation to vehicle electrification, Vishay components provide the foundational building blocks for modern electronic design. The company's expansive portfolio is heavily focused on efficient power management, signal routing, and energy storage. Within its passive component lineup, Vishay is recognized for its extensive array of high-performance capacitors, including robust aluminium electrolytic, film, and polymer variants, alongside highly efficient power inductors. In the realm of discrete semiconductors, Vishay is a premier manufacturer of single and dual MOSFETs, as well as a vast selection of Schottky, Zener, and fast-recovery rectifier diodes designed for demanding power applications. Furthermore, Vishay delivers industry-leading circuit protection and thermal management solutions. With a broad offering of transient voltage suppressors (TVS diodes) and temperature-sensing NTC thermistors, these components are engineered to safeguard sensitive circuitry against both electrical and thermal overstress. By combining this vital mix of advanced discretes and passives, Vishay enables engineers to develop robust, space-saving, and highly resilient electronic systems.

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