BZB784-C9V1,115

Zener Array Diode, 9.1 V, Dual Common Anode, 350 mW, 150 °C, SC-70, 3 Pin

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Manufacturer: NEXPERIA
Product type: Zener Array Diodes
MSL: MSL 1 - Unlimited
SVHC: No SVHC (25-Jun-2025)
No. of Pins: 3 Pin
Product Range: BZB784 series
Qualification: AEC-Q101
Diode Mounting: Surface Mount
Diode Case Style: SC-70
Power Dissipation: 350mW
Zener Voltage Nom: 9.1V
Diode Configuration: Dual Common Anode
Operating Temperature Max: 150°C

Delivery and price
Units per pack	5000
Price	0.055 €
Current stock	10+
Lead time	30 days

Datasheet

## **DISCRETE SEMICONDUCTORS** 

**==> picture [276 x 280] intentionally omitted <==**

**----- Start of picture text -----**<br>
DATA SHEET<br>book, halfpage<br>M3D102<br>**----- End of picture text -----**<br>


## **BZB784 series** Voltage regulator double diodes 

Supersedes data of 2000 May 24 

2001 Feb 27 

**Philips Semiconductors** 

**BZB784 series** 

## **Voltage regulator double diodes** 

## **FEATURES** 

- Total power dissipation: max. 350 mW 

- Approx. 5% VZ tolerance 

- Working voltage range: nom. 2.4 to 15 V (E24 range). 

## **PINNING SOT323 (SC-70)** 

|**PINNING SOT323 (SC-70)**||
|---|---|
|**PIN**|**DESCRIPTION**|
|1|cathode|
|2|cathode|
|3|common anode|



## **APPLICATIONS** 

- General regulation functions 

- ESD and surge protection. 

## **DESCRIPTION** 

Low-power voltage regulator diodes in a small SOT323 (SC-70) package. 

**==> picture [242 x 102] intentionally omitted <==**

**----- Start of picture text -----**<br>
handbook, halfpage<br>3<br>3<br>1 2<br>1 2<br>MAM407<br>Top view<br>**----- End of picture text -----**<br>


Fig.1  Simplified outline and symbol. 

## **MARKING** 

|**MARKING**||||||||
|---|---|---|---|---|---|---|---|
|**TYPE**<br>**NUMBER**|**MARKING**<br>**CODE**|**TYPE**<br>**NUMBER**|**MARKING**<br>**CODE**|**TYPE**<br>**NUMBER**|**MARKING**<br>**CODE**|**TYPE**<br>**NUMBER**|**MARKING**<br>**CODE**|
|BZB784-C2V4|91|BZB784-C3V9|96|BZB784-C6V2|9B|BZB784-C10|9G|
|BZB784-C2V7|92|BZB784-C4V3|97|BZB784-C6V8|9C|BZB784-C11|9H|
|BZB784-C3V0|93|BZB784-C4V7|98|BZB784-C7V5|9D|BZB784-C12|9J|
|BZB784-C3V3|94|BZB784-C5V1|99|BZB784-C8V2|9E|BZB784-C13|9K|
|BZB784-C3V6|95|BZB784-C5V6|9A|BZB784-C9V1|9F|BZB784-C15|9L|



## **LIMITING VALUES** 

In accordance with the Absolute Maximum Rating System (IEC 60134). 

|**SYMBOL**|**PARAMETER**|**CONDITIONS**|**MIN.**|**MAX.**|**UNIT**|
|---|---|---|---|---|---|
|IF|continuous forward current||−|200|mA|
|IZSM|non-repetitive peak reverse current|tp= 100µs; square wave;<br>Tamb= 25°C; prior to surge|see Table 1|||
|Ptot|total power dissipation; note 1|Tamb= 25°C; 2 diodes loaded|−|350|mW|
|||Tamb= 25°C; 1 diode loaded|−|180|mW|
|PZSM|non-repetitive peak reverse<br>dissipation|tp= 100µs; square wave;<br>Tamb= 25°C; prior to surge|−|40|W|
|Tstg|storage temperature||−65|+150|°C|
|Tj|junction temperature||−|150|°C|



## **Note** 

1. Device mounted on an FR4 printed-circuit board. 

2001 Feb 27 

2 

Philips Semiconductors 

## Voltage regulator double diodes 

## BZB784 series 

## **THERMAL CHARACTERISTICS** 

|**SYMBOL**|**PARAMETER**|**CONDITIONS**|**VALUE**|**UNIT**|
|---|---|---|---|---|
|Rth j-s|thermal resistance from junction to soldering point|2 diodes loaded; note 1|140|K/W|
|||1 diode loaded; note 1|265|K/W|
|Rth j-a|thermal resistance from junction to ambient|2 diodes loaded; note 2|355|K/W|
|||1 diode loaded; note 2|680|K/W|



## **Notes** 

1. Solder points on cathode tabs. 

2. Device mounted on a FR4 printed-circuit board. 

## **ELECTRICAL CHARACTERISTICS** 

## **Total BZB784-C series** 

Tj = 25 °C; unless otherwise specified. 

|Tj= 25°C;|unless otherwise specified.||||
|---|---|---|---|---|
|**SYMBOL**|**PARAMETER**|**CONDITIONS**|**MAX.**|**UNIT**|
|VF|forward voltage|IF= 10 mA; see Fig.2|0.9|V|
|IR|reverse current<br>BZB784-C2V4<br>BZB784-C2V7<br>BZB784-C3V0<br>BZB784-C3V3<br>BZB784-C3V6<br>BZB784-C3V9<br>BZB784-C4V3<br>BZB784-C4V7<br>BZB784-C5V1<br>BZB784-C5V6<br>BZB784-C6V2<br>BZB784-C6V8<br>BZB784-C7V5<br>BZB784-C8V2<br>BZB784-C9V1<br>BZB784-C10<br>BZB784-C11<br>BZB784-C12<br>BZB784-C13<br>BZB784-C15|VR= 1 V<br>VR= 1 V<br>VR= 1 V<br>VR= 1 V<br>VR= 1 V<br>VR= 1 V<br>VR= 1 V|50<br>20<br>10<br>5<br>5<br>3<br>3|µA<br>µA<br>µA<br>µA<br>µA<br>µA<br>µA|
|||VR= 2 V<br>VR= 2 V<br>VR= 2 V|3<br>2<br>1|µA<br>µA<br>µA|
|||VR= 4 V<br>VR= 4 V|3<br>2|µA<br>µA|
|||VR= 5 V<br>VR= 5 V|1<br>700|µA<br>nA|
|||VR= 6 V|500|nA|
|||VR= 7 V|200|nA|
|||VR= 8 V<br>VR= 8 V<br>VR= 8 V|100<br>100<br>100|nA<br>nA<br>nA|
|||VR= 10.5V|50|nA|



2001 Feb 27 

3 

_white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here inThis text is here in 

## 

**Table 1** Per type BZB784-C2V4 to C15 

Tj = 25 °C; unless otherwise specified. 

|**BZB784-C**<br>**XXX**|**WORKING VOLTAGE**<br>**VZ (V)**<br>**at IZ = 5 mA**|**WORKING VOLTAGE**<br>**VZ (V)**<br>**at IZ = 5 mA**|**DIFFERENTIAL RESISTANCE**<br>**rdif (**Ω**)**|**DIFFERENTIAL RESISTANCE**<br>**rdif (**Ω**)**|**DIFFERENTIAL RESISTANCE**<br>**rdif (**Ω**)**|**DIFFERENTIAL RESISTANCE**<br>**rdif (**Ω**)**|**TEMP.**<br>**COEFFICIENT**<br>**SZ (mV/K)**<br>**at IZtest = 5 mA**<br>(see Figs 3 and 4)|**DIODE CAP.**<br>**Cd (pF)**<br>**at f = 1 MHz;**<br>**VR = 0 V**|**NON-REPETITIVE PEAK**<br>**REVERSE CURRENT**<br>**IZSM (A) at tp = 100**µ**s;**<br>**Tamb = 25**°**C**|
|---|---|---|---|---|---|---|---|---|---|
||**Tol.**≈**5%**||**at IZ = 1 mA**||**at IZ = 5 mA**|||||
||**MIN.**|**MAX.**|**TYP.**|**MAX.**|**TYP.**|**MAX.**|**TYP.**|**MAX.**|**MAX.**|
|2V4|2.2|2.6|275|600|70|100|−1.3|450|6.0|
|2V7|2.5|2.9|300|600|75|100|−1.4|450|6.0|
|3V0|2.8|3.2|325|600|80|95|−1.6|450|6.0|
|3V3|3.1|3.5|350|600|85|95|−1.8|450|6.0|
|3V6|3.4|3.8|375|600|85|90|−1.9|450|6.0|
|3V9|3.7|4.1|400|600|85|90|−1.9|450|6.0|
|4V3|4.0|4.6|410|600|80|90|−1.7|450|6.0|
|4V7|4.4|5.0|425|500|50|80|−1.2|300|6.0|
|5V1|4.8|5.4|400|480|40|60|−0.5|300|6.0|
|5V6|5.2|6.0|80|400|15|40|1.0|300|6.0|
|6V2|5.8|6.6|40|150|6|10|2.2|200|6.0|
|6V8|6.4|7.2|30|80|6|15|3.0|200|6.0|
|7V5|7.0|7.9|30|80|6|15|3.6|150|4.0|
|8V2|7.7|8.7|40|80|6|15|4.3|150|4.0|
|9V1|8.5|9.6|40|100|6|15|5.2|150|3.0|
|10|9.4|10.6|50|150|8|20|6.0|90|3.0|
|11|10.4|11.6|50|150|10|20|6.9|90|2.5|
|12|11.4|12.7|50|150|10|25|7.9|85|2.5|
|13|12.4|14.1|50|170|10|30|8.8|80|2.5|
|15|13.8|15.6|50|200|10|30|10.7|75|2.0|



Philips Semiconductors 

## Voltage regulator double diodes 

## BZB784 series 

## **GRAPHICAL DATA** 

**==> picture [242 x 219] intentionally omitted <==**

**----- Start of picture text -----**<br>
MLD362<br>300<br>handbook, halfpage<br>IF<br>(mA)<br>200<br>100<br>0<br>0.6 0.7 0.8 0.9 1<br>VF (V)<br>Tj = 25 °C.<br>**----- End of picture text -----**<br>


**==> picture [213 x 35] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig.2 Forward current as a function of forward<br>voltage; typical values.<br>**----- End of picture text -----**<br>


**==> picture [241 x 221] intentionally omitted <==**

**----- Start of picture text -----**<br>
MLD363<br>0.5<br>handbook, halfpage<br>SZ<br>(mV/K) 4V7<br>0<br>4V3<br>−0.5<br>2V4<br>2V7<br>3V9<br>−1<br>3V6<br>−1.5<br>3V3<br>3V0<br>−2<br>10 [−][1] 1 10 10 [2]<br>IZ (mA)<br>BZB784-C2V4 to C4V7.<br>Tj = 25 to 150 °C.<br>**----- End of picture text -----**<br>


**==> picture [214 x 35] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig.3 Temperature coefficient as a function of<br>working current; typical values.<br>**----- End of picture text -----**<br>


**==> picture [241 x 227] intentionally omitted <==**

**----- Start of picture text -----**<br>
MLD364<br>12<br>handbook, halfpage<br>15<br>SZ<br>(mV/K)<br>13<br>8 12<br>11<br>10<br>9V1<br>8V2<br>4 7V5<br>6V8<br>6V2<br>5V6<br>5V1<br>0<br>−4<br>10 [−][1] 1 10 10 [2]<br>IZ (mA)<br>BZB784-C5V1 to C15.<br>Tj = 25 to 150 °C.<br>**----- End of picture text -----**<br>


**==> picture [213 x 34] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig.4 Temperature coefficient as a function of<br>working current; typical values.<br>**----- End of picture text -----**<br>


2001 Feb 27 

5 

Philips Semiconductors 

## Voltage regulator double diodes 

## BZB784 series 

## **PACKAGE OUTLINE** 

## **Plastic surface mounted package; 3 leads** 

**==> picture [37 x 8] intentionally omitted <==**

**----- Start of picture text -----**<br>
SOT323<br>**----- End of picture text -----**<br>


**==> picture [495 x 590] intentionally omitted <==**

**----- Start of picture text -----**<br>
D B E A<br>X<br>y HE v M A<br>3<br>Q<br>A<br>A1<br>c<br>1 2<br>e1 bp w M B Lp<br>e detail X<br>0 1 2 mm<br>scale<br>DIMENSIONS (mm are the original dimensions)<br>UNIT A maxA1 bp c D E e e1 HE Lp Q v w<br>1.1 0.4 0.25 2.2 1.35 2.2 0.45 0.23<br>mm 0.1 1.3 0.65 0.2 0.2<br>0.8 0.3 0.10 1.8 1.15 2.0 0.15 0.13<br>OUTLINE  REFERENCES EUROPEAN<br>ISSUE DATE<br>VERSION  IEC  JEDEC  EIAJ PROJECTION<br> SOT323 SC-70 97-02-28<br>**----- End of picture text -----**<br>


2001 Feb 27 

6 

Philips Semiconductors 

## Voltage regulator double diodes 

## BZB784 series 

## **DATA SHEET STATUS** 

|**DATA SHEET STATUS**|||
|---|---|---|
|**DATA SHEET STATUS**|**PRODUCT**<br>**STATUS**|**DEFINITIONS** (1)|
|Objective specifcation|Development|This data sheet contains the design target or goal specifcations for<br>product development. Specifcation may change in any manner without<br>notice.|
|Preliminary specifcation|Qualifcation|This data sheet contains preliminary data, and supplementary data will be<br>published at a later date. Philips Semiconductors reserves the right to<br>make changes at any time without notice in order to improve design and<br>supply the best possible product.|
|Product specifcation|Production|This data sheet contains fnal specifcations. Philips Semiconductors<br>reserves the right to make changes at any time without notice in order to<br>improve design and supply the best possible product.|



## **Note** 

1. Please consult the most recently issued data sheet before initiating or completing a design. 

## **DEFINITIONS** 

**Short-form specification**  The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. 

**Limiting values definition**  Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. 

**Application information**  Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 

## **DISCLAIMERS** 

**Life support applications**  These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. 

**Right to make changes**  Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 

2001 Feb 27 

7 

## **Philips Semiconductors – a worldwide company** 

**Argentina:** see South America 

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**Mexico:** 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel. +9-5 800 234 7381, Fax +9-5 800 943 0087 **Middle East:** see Italy 

**For all other countries apply to:** Philips Semiconductors, Marketing Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 

**Internet:** http://www.semiconductors.philips.com 

© Philips Electronics N.V. 2001 

SCA 71 

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. 

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. 

Printed in The Netherlands 

**==> picture [214 x 95] intentionally omitted <==**

Date of release: 2001 Feb 27 Document order number: 9397 750 08112 

613514/02/pp8

Updated at March 30, 2026

Nexperia is a dedicated global leader in discretes, logic, and MOSFET devices. Built on over half a century of semiconductor expertise and operating independently since 2017, the company produces consistently reliable components at an exceptional volume of 85 billion units annually. With its own manufacturing facilities, Nexperia delivers industry-leading small packages that combine power and thermal efficiency with best-in-class quality, meeting the rigorous standards of the automotive sector. Our extensive Nexperia portfolio is heavily focused on discrete semiconductors, providing engineers with a robust selection of core building blocks. This includes a comprehensive range of diodes and rectifiers, featuring a vast selection of Zener single diodes and Schottky diodes designed for precise voltage regulation and efficient power routing. Additionally, we offer an expansive array of bipolar transistors and single MOSFETs tailored for reliable switching and amplification in demanding applications. Beyond these primary offerings, the lineup extends into specialized circuit protection and passive components. This includes transient voltage suppressor (TVS) diodes, Zener array diodes, and small signal diodes, alongside dual MOSFETs and fast recovery rectifiers. For comprehensive design needs, the selection also encompasses integrated passive filters, common mode chokes, and precision timers and oscillators, ensuring a complete solution for high-performance electronic systems.

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