BYW29-200H
REC T0220 8A 200V ULTF HF
- Manufacturer: ONSEMI
- Product type: Fast & Ultrafast Recovery Rectifier Diodes
- SVHC: No SVHC (15-Jan-2018)
- Product Range: -
| Delivery and price | |
|---|---|
| Units per pack | 250 |
| Price | 0.259 € |
| Current stock | 100+ |
| Lead time | 30 days |
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## Switch-mode Power Rectifiers
## BYW29-200
## **ULTRAFAST RECTIFIERS 8.0 AMPERES 200 VOLTS**
This state−of−the−art device is designed for use in switching power supplies, inverters and as free wheeling diodes.
## **Features**
- 175 C Operating Junction Temperature
- Popular TO−220 Package
- Epoxy Meets UL 94 V−0 @ 0.125 in
- Low Forward Voltage
- Low Leakage Current
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q 4<br>TO−220B<br>CASE 221B<br>1<br>p PLASTIC<br>3<br>**----- End of picture text -----**<br>
- High Temperature Glass Passivated Junction
- Pb−Free Package is Available*
## **Mechanical Characteristics**
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- Case: Epoxy, Molded, Epoxy Meets UL 94 V−0
- Weight: 1.9 Grams (Approximately)
- Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable
## **MARKING DIAGRAM**
- Lead Temperature for Soldering Purposes: 260 C Max. for 10 Seconds
- Device Meets MSL1 Requirements
- ESD Ratings: Machine Model, C (> 400 V)
AYWWG BYW29−200 KA
Human Body Model, 3B (> 8000 V)
**MAXIMUM RATINGS Symbol Rating Value Unit** VRRM Peak Repetitive Reverse Voltage 200 V VRWM Working Peak Reverse Voltage VR DC Blocking Voltage A = Assembly Location Y = Year IF(AV) Average Rectified Forward Current 8.0 A WW = Work Week TTotal Device, (Rated VC = 150C R), GBYW29−200 = Pb−Free Package= Device Code IFM Peak Repetitive Forward Current 16 A KA = Diode Polarity (Rated VR, Square Wave, 20 kHz), TC = 150C **ORDERING INFORMATION** IFSM Nonrepetitive Peak Surge Current 100 A (Surge Applied at Rated Load Conditions **Device Package Shipping** Half−wave, Single Phase, 60 Hz) TJ, Tstg Operating Junction Temperature and −65 to +175 C BYW29−200G (Pb−Free)TO−220 50 Units/Rail Storage Temperature Range Stresses exceeding those listed in the Maximum Ratings table may damage the ~~—4 re~~ | | device. If any of these limits are exceeded, device functionality should not be **DISCONTINUED** (Note 1) assumed, damage may occur and reliability may be affected. BYW29−200 TO−220 50 Units/Rail *For additional information on our Pb−Free strategy and soldering details, please download the **onsemi** | T ~~T~~
- *For additional information on our Pb−Free strategy and soldering details, please download the **onsemi** Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
1. **DISCONTINUED:** This device is not recommended for new design. Please contact your **onsemi** representative for information. The most current information on this device may be available on www.onsemi.com.
Publication Order Number:
**1**
Semiconductor Components Industries, LLC, 2008 **November, 2024 − Rev. 3**
**BYW29/D**
**BYW29−200**
## **THERMAL CHARACTERISTICS**
|**Symbol**|**Rating**|**Value**<br>~~ee~~|**Unit**<br>~~ee~~|
|---|---|---|---|
|vF<br>~~ee~~|Maximum Instantaneous Forward Voltage (Note 1)<br>(iF= 5.0 A, TC= 100C)<br>(iF= 20 A, TC= 25C)<br>~~ee~~|0.85<br>1.3<br>~~ee~~<br>~~ee~~|V<br>~~ee~~<br>~~ee~~|
|iR<br>~~ee~~|Maximum Instantaneous Reverse Current (Note 1)<br>(Rated Dc Voltage, TJ= 100C)<br>(Rated Dc Voltage, TJ= 25C)<br>~~ee~~|600<br>5.0<br>~~ee~~<br>~~ee~~|A<br>~~ee~~<br>~~ee~~|
|trr<br>~~pe~~|Maximum Reverse Recovery Time<br>(IF= 1.0 A, di/dt = 50 A/ s)<br>(IF= 0.5 A, iR= 1.0 A, IREC= 0.25 A)<br>~~pe~~|35<br>25<br>~~pe~~|ns<br>~~pe~~|
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**2**
**BYW29−200**
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100 1000<br>70 aa 100 SSa Sa aa TJ = 175 C S<br>50<br>FEEEEEEE<br>| 10 SS S 100 C aes<br>30<br>FCCC<br>20 Z| 1.0 lt et 25 C er<br>SRGRGn//N =S==45-o=—<br>0.1<br>10 eee.<br>7.0 A | 0.01 PE<br>a ee 0 20 40 60 EE 80 100 120 ESE 140 160 180 9 200<br>5.0 Pet 2 ee ee VR, REVERSE VOLTAGE (V)<br>Pt || | huLZ JE IAfFLP Figure 2. Typical Reverse Current*<br>3.0 * The curves shown are typical for the highest voltage device in the<br>re<br>grouping. Typical reverse current for lower voltage selections can be<br>2.0 P| | | ff fl estimated from these same curves if VR is sufficiently below rated VR.<br>TJ = 175 C 100 C 25 C 10<br>1.0 nee AT a 9.0 Pr RATED VR APPLIED<br>8.0 dc<br>0.7<br>SSSA PRISE 7.0 exe t e<br>0.5 6.0<br>SQUARE WAVE<br>REG 5.0 E N<br>0.3 II 4.0 E e<br>3.0<br>0.2<br>a 2.0 eee<br>1.0<br>0.1 0 a<br>0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 140 150 160 170 180<br>vF, INSTANTANEOUS VOLTAGE (V) TC, CASE TEMPERATURE ( C)<br>Figure 1. Typical Forward Voltage Figure 3. Current Derating, Case<br>14 10<br>12 a RR JAJA = 16 = 60 C/WC/W 9.0 T J = 175 C —LELLLL<br>REE 4<br>dc (NO HEAT SINK) 8.0<br>10 Sep: 7.0 LY<br>SQUARE WAVE<br>8.0 SQUARE WAVE 6.0 dc<br>5.0<br>6.0<br>4.0<br>HSS 6 EF EEE ee<br>4.0 Ne dc 3.0 | |OT<br>Sr 2.0 a<br>2.0 SQUARE WAVE<br>1.0<br>0 esacree TEST 0 platLf | | | || | hcd|ldt ltl<br>0 20 40 60 80 100 120 140 160 180 200 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10<br>TA, AMBIENT TEMPERATURE ( C) IF(AV), AVERAGE FORWARD CURRENT (AMPS)<br>A)<br>, REVERSE CURRENT (<br>IR<br>, INSTANTANEOUS FORWARD CURRENT (AMPS)<br>iF<br>, AVERAGE FORWARD CURRENT (AMPS)<br>IF(AV)<br>, AVERAGE FORWARD CURRENT (AMPS) , AVERAGE POWER DISSIPATION (WATTS)<br>IF(AV) PF(AV)<br>**----- End of picture text -----**<br>
**Figure 4. Current Derating, Ambient**
**Figure 5. Power Dissipation**
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**BYW29−200**
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1.0<br>eeee<br>ee D = 0.5 ee ee eree<br>0.5 = eee ee<br>a A BO eee ee<br>a Mae<br>0.2 0.1<br>eae ee aa<br>| { | | [o ne a ce ee eee<br>0.1 0.05 Z JC(t) = r(t) R JC<br>0.05 eraeifSea | | 0 0.01 —iilmteeee[tT TT TTT P (pk) TYTLIL R D CURVES APPLY FOR POWER ts° JC = 1.5 C/W MAX |aHH<br>ee a ee eee t1 < PULSE TRAIN SHOWN |<br>SINGLE PULSE t 2 READ TIME AT T1<br>0.02 eeeTLeeeLt ET eee TTT TT DUTY CYCLE, D = t “Lh. nl 1 /t 2 TJ(pk) - TC = P(pk) Z 0 JC(t) iI<br>0.01 PF Tt TTT | EE TT I<br>0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000<br>t, TIME (ms)<br>Figure 6. Thermal Response<br>1000 —— ee ee ee ee ee eeee<br>a<br>aa eea eeee ee ee e<br>TT ee ee ee e<br>300 | TTT TJ = 25 C PLL<br>Ft ETT<br>a ee<br>100 |a a | BBeAtT<br>a<br>aeeeeee ee e<br>eeee<br>30 eeelleee eee .<br>ee eee<br>ee eel<br>10<br>1.0 10 100<br>VR, REVERSE VOLTAGE (V)<br>r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)<br>C, CAPACITANCE (pF)<br>**----- End of picture text -----**<br>
**Figure 7. Typical Capacitance**
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**4**
MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS**
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TO−220, 2−LEAD<br>CASE 221B−04<br>ISSUE F<br>NOTES:<br>C 1. DIMENSIONING AND TOLERANCING PER ANSI<br>Y14.5M, 1982.<br>Q B F T S 2. CONTROLLING DIMENSION: INCH.<br>INCHES MILLIMETERS<br>DIM MIN MAX MIN MAX<br>SCALE 1:1 4 A 0.595 0.620 15.11 15.75<br>B 0.380 0.405 9.65 10.29<br>A C 0.160 0.190 4.06 4.82<br>U D 0.025 0.039 0.64 1.00<br>1 3 F 0.142 0.161 3.61 4.09<br>H G 0.190 0.210 4.83 5.33<br>H 0.110 0.130 2.79 3.30<br>K J 0.014 0.025 0.36 0.64<br>K 0.500 0.562 12.70 14.27<br>L 0.045 0.060 1.14 1.52<br>Q 0.100 0.120 2.54 3.04<br>L R 0.080 0.110 2.04 2.79<br>D R S 0.045 0.055 1.14 1.39<br>T 0.235 0.255 5.97 6.48<br>G J U 0.000 0.050 0.000 1.27<br>STYLE 1: STYLE 2:<br>PIN 1. CATHODE PIN 1. ANODE<br> 2. N/A 2. N/A<br> 3. ANODE 3. CATHODE<br> 4. CATHODE 4. ANODE<br>**----- End of picture text -----**<br>
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DATE 12 APR 2013<br>**----- End of picture text -----**<br>
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Electronic versions are uncontrolled except when accessed directly from the Document Repository.<br>DOCUMENT NUMBER: 98ASB42149B Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.<br>DESCRIPTION: TO−220, 2−LEAD PAGE 1 OF 1<br>**----- End of picture text -----**<br>
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Updated at June 8, 2026
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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