BYW29-200G
Fast / Ultrafast Diode, 200 V, 8 A, Single, 1.3 V, 35 ns, 100 A
- Manufacturer: ONSEMI
- Product type: Fast & Ultrafast Recovery Rectifier Diodes
- Repetitive Reverse Voltage Vrrm Max:200V; Forward Current If(AV):8A; Diode Configuration:Single; Forward Voltage VF Max:1.3V; Reverse Recovery Time trr Max:35ns; Forward Surge Current
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 2 Pin
- Product Range: BYW29
- Qualification: -
- Diode Case Style: TO-220B
- Diode Configuration: Single
- Forward Voltage Max: 1.3V
- Forward Surge Current: 100A
- Reverse Recovery Time: 35ns
- Average Forward Current: 8A
- Operating Temperature Max: 175°C
- Repetitive Peak Reverse Voltage: 200V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.387 € |
| Current stock | 10+ |
| Lead time | 30 days |
## BYW29-200 ## S witch-mode Power Rectifiers This state−of−the−art device is designed for use in switching power supplies, inverters and as free wheeling diodes. ## **Features** **http://onsemi.com** - 175°C Operating Junction Temperature - Popular TO−220 Package - Epoxy Meets UL 94 V−0 @ 0.125 in - Low Forward Voltage - Low Leakage Current - High Temperature Glass Passivated Junction **ULTRAFAST RECTIFIERS 8.0 AMPERES 200 VOLTS** - Pb−Free Package is Available* 1 **Mechanical Characteristics** 4 • Case: Epoxy, Molded, Epoxy Meets UL 94 V−0 3 ~~me~~ • Weight: 1.9 Grams (Approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable • Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds **MARKING** 4 **DIAGRAM** • Device Meets MSL1 Requirements • ESD Ratings: Machine Model, C (> 400 V) Human Body Model, 3B (> 8000 V) **MAXIMUM RATINGS Rating Symbol Value Unit CASE 221B** AY WWG Peak Repetitive Reverse Voltage VRRM 200 V **TO−220B** BYW29-200 Working Peak Reverse Voltage VRWM 1 **PLASTIC** KA DC Blocking Voltage VR 3 Average Rectified Forward Current IF(AV) 8.0 A Total Device, (Rated VR), TC = 150 ° C Peak Repetitive Forward Current IFM 16 A (Rated VR, Square Wave, 20 kHz), A = Assembly Location TC = 150 ° C Y = Year Nonrepetitive Peak Surge Current IFSM 100 A WW = Work Week (Surge Applied at Rated Load Conditions BYW80−200 = Device Code Half−wave, Single Phase, 60 Hz) G = Pb−Free Package Operating Junction Temperature and TJ, Tstg −65 to +175 ° C KA = Diode Polarity Storage Temperature Range ~~Sah~~ **THERMAL CHARACTERISTICS ORDERING INFORMATION** Maximum Thermal Resistance, R JC 3.0 ° C/W **Device Package Shipping** Junction−to−Case BYW29−200 TO−220 50 Units/Rail Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended BYW29−200G TO−220 50 Units/Rail Operating Conditions is not implied. Extended exposure to stresses above the (Pb−Free) Recommended Operating Conditions may affect device reliability. ~~FT Fe~~ - *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Publication Order Number: **1** © Semiconductor Components Industries, LLC, 2008 **June, 2008 − Rev. 2** **BYW29/D** **BYW29−200** ## **ELECTRICAL CHARACTERISTICS** |**ELECTRICAL CHARACTERISTICS**|||| |---|---|---|---| |**Rating**|**Symbol**|**Value**|**Unit**| |Maximum Instantaneous Forward Voltage (Note 1)<br>(iF= 5.0 A, TC= 100°C)<br>(iF= 20 A, TC= 25°C)|vF|0.85<br>1.3|V| |Maximum Instantaneous Reverse Current (Note 1)<br>(Rated Dc Voltage, TJ= 100°C)<br>(Rated Dc Voltage, TJ= 25°C)|iR|600<br>5.0|�A| |Maximum Reverse Recovery Time<br>(IF= 1.0 A, di/dt = 50 A/�s)<br>(IF= 0.5 A, iR= 1.0 A, IREC= 0.25 A)|trr|35<br>25|ns| 1. Pulse Test: Pulse Width = 300 � s, Duty Cycle ≤ 2.0%. **==> picture [491 x 401] intentionally omitted <==** **----- Start of picture text -----**<br> 100 1000<br>70<br>100 TJ = 175°C<br>50<br>10<br>100°C<br>30<br>20 1.0 25°C<br>0.1<br>10<br>7.0 0.01<br>0 20 40 60 80 100 120 140 160 180 200<br>5.0 VR, REVERSE VOLTAGE (V)<br>Figure 2. Typical Reverse Current*<br>3.0 * The curves shown are typical for the highest voltage device in the<br>grouping. Typical reverse current for lower voltage selections can be<br>2.0 estimated from these same curves if VR is sufficiently below rated VR.<br>TJ = 175°C 100°C 25°C 10<br>1.0 9.0 RATED VR APPLIED<br>8.0 dc<br>0.7<br>7.0<br>0.5 6.0<br>SQUARE WAVE<br>5.0<br>0.3 4.0<br>3.0<br>0.2<br>2.0<br>1.0<br>0.1 0<br>0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 140 150 160 170 180<br>vF, INSTANTANEOUS VOLTAGE (V) TC, CASE TEMPERATURE (°C)<br>�<br>, REVERSE CURRENT ( A)<br>IR<br>, INSTANTANEOUS FORWARD CURRENT (AMPS)<br>iF<br>, AVERAGE FORWARD CURRENT (AMPS)<br>IF(AV)<br>**----- End of picture text -----**<br> **Figure 1. Typical Forward Voltage** **Figure 3. Current Derating, Case** **http://onsemi.com** **2** **BYW29−200** **==> picture [492 x 402] intentionally omitted <==** **----- Start of picture text -----**<br> 14 10<br>12 RR � � JAJA = 16 = 60°°C/WC/W 9.0 T J = 175°C<br>dc (NO HEAT SINK) 8.0<br>10 7.0<br>SQUARE WAVE<br>8.0 SQUARE WAVE 6.0 dc<br>5.0<br>6.0<br>4.0<br>4.0 dc 3.0<br>2.0<br>2.0 SQUARE WAVE<br>1.0<br>0 0<br>0 20 40 60 80 100 120 140 160 180 200 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10<br>TA, AMBIENT TEMPERATURE (°C) IF(AV), AVERAGE FORWARD CURRENT (AMPS)<br>Figure 4. Current Derating, Ambient Figure 5. Power Dissipation<br>1.0<br>D = 0.5<br>0.5<br>0.2 0.1<br>0.1 0.05 Z � JC(t) = r(t) R � JC<br>0.01 P (pk) R � JC = 1.5 ° C/W MAX<br>D CURVES APPLY FOR POWER<br>0.05<br>t 1 PULSE TRAIN SHOWN<br>SINGLE PULSE t 2 READ TIME AT T1<br>0.02 DUTY CYCLE, D = t 1 /t 2 TJ(pk) - TC = P(pk) Z�JC(t)<br>0.01<br>0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000<br>t, TIME (ms)<br>, AVERAGE FORWARD CURRENT (AMPS) , AVERAGE POWER DISSIPATION (WATTS)<br>IF(AV) PF(AV)<br>r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)<br>**----- End of picture text -----**<br> **Figure 6. Thermal Response** **==> picture [246 x 171] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>300 TJ = 25°C<br>100<br>30<br>10<br>1.0 10 100<br>VR, REVERSE VOLTAGE (V)<br>C, CAPACITANCE (pF)<br>**----- End of picture text -----**<br> **Figure 7. Typical Capacitance** **http://onsemi.com** **3** MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **==> picture [470 x 282] intentionally omitted <==** **----- Start of picture text -----**<br> TO−220, 2−LEAD<br>CASE 221B−04<br>ISSUE F<br>DATE 12 APR 2013<br>o<br>NOTES:<br>C 1. DIMENSIONING AND TOLERANCING PER ANSI<br>Y14.5M, 1982.<br>Q B F T S 2. CONTROLLING DIMENSION: INCH.<br>INCHES MILLIMETERS<br>DIM MIN MAX MIN MAX<br>SCALE 1:1 4 A 0.595 0.620 15.11 15.75<br>B 0.380 0.405 9.65 10.29<br>ae A Lt Bobs, C 0.160 0.190 4.06 4.82<br>U D 0.025 0.039 0.64 1.00<br>1 3 F 0.142 0.161 3.61 4.09<br>H G 0.190 0.210 4.83 5.33<br>H 0.110 0.130 2.79 3.30<br>K J 0.014 0.025 0.36 0.64<br>K 0.500 0.562 12.70 14.27<br>L 0.045 0.060 1.14 1.52<br>Q 0.100 0.120 2.54 3.04<br>L R 0.080 0.110 2.04 2.79<br>D R S 0.045 0.055 1.14 1.39<br>T 0.235 0.255 5.97 6.48<br>G J U 0.000 0.050 0.000 1.27<br>STYLE 1: STYLE 2:<br>PIN 1. CATHODE PIN 1. ANODE<br> 2. N/A 2. N/A<br> 3. ANODE 3. CATHODE<br> 4. CATHODE 4. ANODE<br>**----- End of picture text -----**<br> **DOCUMENT NUMBER: 98ASB42149B DESCRIPTION: TO−220, 2−LEAD** ~~_~~ Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **PAGE 1 OF 1** ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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This literature is subject to all applicable copyright laws and is not for resale in any manner. ## **PUBLICATION ORDERING INFORMATION** **LITERATURE FULFILLMENT** : **TECHNICAL SUPPORT Email Requests to:** orderlit@onsemi.com **North American Technical Support: Europe, Middle East and Africa Technical Support:** Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 00421 33 790 2910 **onsemi Website:** www.onsemi.com Phone: 011 421 33 790 2910 For additional information, please contact your local Sales Representative ◊ **==> picture [232 x 43] intentionally omitted <==**
Updated at June 8, 2026
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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