BYV34X-600,127

**10 December 2015** 

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## **IMPORTANT NOTICE** 

## **1.  Global joint venture starts operations as WeEn Semiconductors** 

Dear customer, 

As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset Management Co. Ltd established Bipolar Power joint venture (JV), **WeEn Semiconductors** , which will be used in future Bipolar Power documents together with new contact details. 

In this document where the previous NXP references remain, please use the new links as shown below. 

**WWW** - For www.nxp.com use www.ween-semi.com **Email** - For salesaddresses@nxp.com use salesaddresses@ween-semi.com 

For the copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) “[©] **NXP Semiconductors N.V.** _**{year}**_ **. All rights reserved** ” becomes “[©] **WeEn Semiconductors Co., Ltd.** _**{year}**_ **. All rights reserved** ” 

If you have any questions related to this document, please contact our nearest sales office via e- mail or phone (details via salesaddresses@ween-semi.com). 

Thank you for your cooperation and understanding, 

WeEn Semiconductors 

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## **BYV34X-600** 

## 

**Rev. 01 — 13 September 2007** 

## **Product data sheet** 

## **1.** 

## **1.1 General description** 

package. 

## **1.2 Features** 

I Fast switching 

I Soft recovery characteristics I Low forward voltage drop 

- I Low thermal resistance 

- I Isolated package 

- I High thermal cycling performance 

## **1.3 Applications** 

- I switched-mode power supplies 

- I Discontinuous Current Mode (DCM) Power Factor Correction (PFC) 

## **1.4 Quick reference data** 

- I VRRM ≤ 600 V I VF ≤ 1.16 V 

I IO(AV) ≤ 20 A 

- I trr ≤ 60 ns 

## **2. Pinning information** 

|**2.**<br>**Pinning information**|**2.**<br>**Pinning information**|**2.**<br>**Pinning information**|
|---|---|---|
|**Table 1.**<br>**Pinning**|||
|**Pin**<br>**Description**<br>**Simplifed outline**<br>**Symbol**|||
|1<br>anode 1<br>2<br>cathode<br>3<br>anode 2<br>mb<br>mounting base; isolated|3<br>2<br>1<br>mb<br>1|sym084<br>3<br><br>2|



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**SOT186A (3-lead TO-220F)** 

**BYV34X-600** 

**NXP Semiconductors** 

## **3. Ordering information** 

## **Table 2. Ordering information** 

|**Type number**|**Package**|**Package**|**Package**|
|---|---|---|---|
||**Name**|**Description**|**Version**|
|BYV34X-600|TO-220F<br>plastic single-ended package; isolated heatsink mounted; 1 mounting hole;<br>3-lead TO-220 ‘full pack’<br>SOT186A|||



## **4. Limiting values** 

## **Table 3. Limiting values** 

In accordance with the Absolute Maximum Rating System (IEC 60134). 

|**Symbol**<br>**Parameter**|**Conditions**<br>**Min**<br>**Max**<br>**Unit**|
|---|---|
|VRRM<br>repetitive peak reverse voltage|-<br>600<br>V|
|VRWM<br>crest working reverse voltage|-<br>600<br>V|
|VR<br>reverse voltage|square waveform;δ= 1.0; Th≤100°C<br>-<br>600<br>V|
|IO(AV)<br>average output current|square waveform;δ= 0.5; Th≤44°C; both<br>diodes conducting<br>-<br>20<br>A|
|IFRM<br>repetitive peak forward current|t = 25µs; square waveform;δ= 0.5;<br>Th≤44°C; per diode<br>-<br>20<br>A|
|IFSM<br>non-repetitive peak forward<br>current|t = 10 ms; sinusoidal waveform; per diode<br>-<br>120<br>A|
||t = 8.3 ms; sinusoidal waveform; per diode<br>-<br>132<br>A|
|Tstg<br>storage temperature|−40<br>+150<br>°C|
|Tj<br>junction temperature|-<br>150<br>°C|



© NXP B.V. 2007. All rights reserved. 

BYV34X-600_1 

**Rev. 01 — 13 September 2007** 

**Product data sheet** 

**2 of 9** 

**BYV34X-600** 

**NXP Semiconductors** 

## **5. Thermal characteristics** 

|**5.**<br>**Thermal characteristics**||
|---|---|
|**Table 4.**<br>**Thermal characteristics**||
|**Symbol**<br>**Parameter**|**Conditions**<br>**Min**<br>**Typ**<br>**Max**<br>**Unit**|
|Rth(j-h)<br>thermal resistance from junction to<br>heatsink|with heatsink compound;<br>per diode; see<br>Figure<br>1<br>-<br>-<br>5.0<br>K/W|
||with heatsink compound;<br>both diodes conducting<br>-<br>-<br>4.0<br>K/W|
||without heatsink compound;<br>per diode<br>-<br>-<br>7.0<br>K/W|
|Rth(j-a)<br>thermal resistance from junction to<br>ambient|in free air<br>-<br>55<br>-<br>K/W|



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001aaf033<br>10<br>Zth(j-h)<br>(K/W)<br>1<br>10 [−][1] P δ = tp<br>T<br>10 [−][2]<br>tp t<br>T<br>10 [−][3]<br>10 [−][6] 10 [−][5] 10 [−][4] 10 [−][3] 10 [−][2] 10 [−][1] 1 10<br>tp (s)<br>**----- End of picture text -----**<br>


**Fig 1. Transient thermal impedance from junction to heatsink as a function of pulse width** 

## **6. Isolation characteristics** 

|**Table 5.**<br>Th= 25°C|**Isolation limiting values**<br>unless otherwise specified.|**and characteristics**|||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Conditions**|**Min**|**Typ**|**Max**|**Unit**|
|Visol(RMS)|RMS isolation voltage|from all terminals to external heatsink;|-|-|2500|V|
|||f = 50 Hz to 60 Hz; sinusoidal waveform;|||||
|||relative humidity≤65 %; clean and dust free|||||
|Cisol|isolation capacitance|from cathode to external heatsink; f = 1 MHz|-|10|-|pF|



© NXP B.V. 2007. All rights reserved. 

BYV34X-600_1 **Product data sheet** 

**Rev. 01 — 13 September 2007** 

**3 of 9** 

**BYV34X-600** 

**NXP Semiconductors** 

## **7. Characteristics** 

## **Table 6. Characteristics** 

Tj = 25 ° 

|**Symbol**<br>**Parameter**|**Conditions**<br>**Min**<br>**Typ**<br>**Max**<br>**Unit**|
|---|---|
|**Static characteristics**||
|VF<br>forward voltage|IF= 10 A; Tj= 150°C; see<br>Figure<br>2<br>-<br>0.92<br>1.16<br>V|
||IF= 10 A; see<br>Figure<br>2<br>-<br>1.07<br>1.36<br>V|
|IR<br>reverse current|VR= 600 V<br>-<br>10<br>50<br>µA|
||VR= 600 V; Tj= 100°C<br>-<br>0.2<br>0.6<br>mA|
|**Dynamic characteristics**||
|Qr<br>recovered charge|IF= 2 A to VR≥30 V; dIF/dt = 20 A/µs;<br>see<br>Figure<br>3<br>-<br>40<br>70<br>nC|
|trr<br>reverse recovery time|IF= 1 A to VR≥30 V; dIF/dt = 100 A/µs;<br>see<br>Figure<br>3<br>-<br>50<br>60<br>ns|
|IRM<br>peak reverse recovery<br>current|IF= 10 A to VR≥30 V; dIF/dt = 50 A/µs;<br>Tj= 100°C; see<br>Figure<br>3<br>-<br>3<br>5<br>A|
|VFR<br>forward recovery<br>voltage|IF= 10 A; dIF/dt = 10 A/µs; see<br>Figure<br>4<br>-<br>3.2<br>-<br>V|



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003aab485<br>30<br>IF<br>(A)<br>25<br>20<br>15<br>10<br>(1) (2) (3)<br>5<br>0<br>0 0.4 0.8 1.2 1.6<br>VF (V)<br>**----- End of picture text -----**<br>


- (1) Tj = 150 °C; typical values 

- (2) Tj = 150 °C; maximum values 

- (3) Tj = 25 °C; maximum values 

**Fig 2. Forward current as a function of forward voltage** 

© NXP B.V. 2007. All rights reserved. 

BYV34X-600_1 

**Rev. 01 — 13 September 2007** 

**Product data sheet** 

**4 of 9** 

**BYV34X-600** 

**NXP Semiconductors** 

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**----- Start of picture text -----**<br>
IF<br>−dlF<br>IF<br>dt<br>trr<br>time<br>time<br>VF<br>10 %<br>Qr 100 % VFR<br>VF<br>IR IRM<br>001aab911 time<br>001aab912<br>Fig 3. Reverse recovery definitions Fig 4. Forward recovery definitions<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
003aab483<br>18<br>Ptot δ = 1<br> (W)<br>15<br>0.5<br>12<br>0.2<br>9<br>0.1<br>6<br>3<br>0<br>0 5 10 15<br>IF(AV) (A)<br>**----- End of picture text -----**<br>


IF(AV) = IF(RMS) × √δ 

**Fig 5. Forward power dissipation as a function of average forward current; square waveform; maximum values** 

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**----- Start of picture text -----**<br>
003aab484<br>12<br>Ptot a = 1.57<br>(W)  1.9<br>10<br>2.2<br>8 2.8<br>4.0<br>6<br>4<br>2<br>0<br>0 3 6 9<br>IF(AV) (A)<br>**----- End of picture text -----**<br>


a = form factor = IF(RMS) / IF(AV) 

**Fig 6. Forward power dissipation as a function of average forward current; sinusoidal waveform; maximum values** 

© NXP B.V. 2007. All rights reserved. 

BYV34X-600_1 

**Rev. 01 — 13 September 2007** 

**Product data sheet** 

**5 of 9** 

**BYV34X-600** 

**NXP Semiconductors** 

## **8. Package outline** 

**Plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3-lead TO-220 'full pack'** 

## **SOT186A** 

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**----- Start of picture text -----**<br>
E A<br>P A1<br>q<br>D1 mounting<br>T base<br>D<br>j<br>L2 L1 K<br>Q<br>b1<br>L b2<br>1 2 3<br>b w M c<br>e<br>e1<br>0 5 10 mm<br>scale<br>DIMENSIONS (mm are the original dimensions)<br>(1)<br>UNIT A A1 b b1 b2 c D D1 E e e1 j K L L1 L2 P Q q T [(2)] w<br>max.<br>mm 4.6 2.9 0.9 1.1 1.4 0.7 15.8 6.5 10.3 2.54 5.08 2.7 0.6 14.4 3.30 3 3.2 2.6 3.0 2.5 0.4<br>4.0 2.5 0.7 0.9 1.0 0.4 15.2 6.3 9.7 1.7 0.4 13.5 2.79 3.0 2.3 2.6<br>Notes<br>1. Terminal dimensions within this zone are uncontrolled.<br>2. Both recesses are ∅ 2.5 × 0.8 max. depth<br>OUTLINE  REFERENCES EUROPEAN<br>ISSUE DATE<br>VERSION  IEC  JEDEC  JEITA PROJECTION<br>02-04-09<br> SOT186A 3-lead TO-220F<br>06-02-14<br>**----- End of picture text -----**<br>


**Fig 7. Package outline SOT186A (3-lead TO-220F)** 

© NXP B.V. 2007. All rights reserved. 

BYV34X-600_1 

**Rev. 01 — 13 September 2007** 

**Product data sheet** 

**6 of 9** 

**BYV34X-600** 

**NXP Semiconductors** 

## **9. Revision history** 

|**Table 7.**|**Revision**|**history**||||
|---|---|---|---|---|---|
|**Document**|**ID**|**Release date**|**Data sheet status**|**Change notice**|**Supersedes**|
|BYV34X-600_1||20070913|Product data sheet|-|-|



© NXP B.V. 2007. All rights reserved. 

BYV34X-600_1 

**Rev. 01 — 13 September 2007** 

**Product data sheet** 

**7 of 9** 

**BYV34X-600** 

**NXP Semiconductors** 

## **10. Legal information** 

## **10.1 Data sheet status** 

|**Document statu**|**s**<br>**[1]**<br>**[2]**<br>**Product status**<br>**[3]**<br>**Defnition**|
|---|---|
|Objective [short] data sheet<br>Development<br>This document contains data from the objective specifcation for product development.||
|Preliminary [short] data sheet<br>Qualifcation<br>This document contains data from the preliminary specifcation.||
|Product [short] data sheet<br>Production<br>This document contains the product specifcation.||



[1] Please consult the most recently issued document before initiating or completing a design. 

[2] 

[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 

## **10.2** 

**Draft —** The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. 

**Short data sheet —** A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 

## **10.3 Disclaimers** 

**General —** Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. 

**Right to make changes —** NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. 

**Suitability for use —** NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or 

malfunction of a NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. 

**Applications —** Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 

**Limiting values —** the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. 

**Terms and conditions of sale —** NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. 

**No offer to sell or license —** Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 

## **10.4 Trademarks** 

Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 

## **11. Contact information** 

For additional information, please visit: **http://www.nxp.com** 

**salesaddresses@nxp.com** 

© NXP B.V. 2007. All rights reserved. 

BYV34X-600_1 

**Rev. 01 — 13 September 2007** 

**Product data sheet** 

**8 of 9** 

**BYV34X-600** 

**NXP Semiconductors** 

## **12. Contents** 

|**1**|**Product profle . . . . . . . . . . . . . . . . . . . . . . . . . .  1**|
|---|---|
|1.1|General description. . . . . . . . . . . . . . . . . . . . . . 1|
|1.2|Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1|
|1.3|Applications  . . . . . . . . . . . . . . . . . . . . . . . . . . . 1|
|1.4|Quick reference data. . . . . . . . . . . . . . . . . . . . . 1|
|**2**|**Pinning information. . . . . . . . . . . . . . . . . . . . . .  1**|
|**3**|**Ordering information . . . . . . . . . . . . . . . . . . . . .  2**|
|**4**|**Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . .  2**|
|**5**|**Thermal characteristics. . . . . . . . . . . . . . . . . . .  3**|
|**6**|**Isolation characteristics . . . . . . . . . . . . . . . . . .  3**|
|**7**|**Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . .  4**|
|**8**|**Package outline . . . . . . . . . . . . . . . . . . . . . . . . .  6**|
|**9**|**Revision history. . . . . . . . . . . . . . . . . . . . . . . . .  7**|
|**10**|**Legal information. . . . . . . . . . . . . . . . . . . . . . . .  8**|
|10.1|Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 8|
|10.2|Defnitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8|
|10.3|Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8|
|10.4|Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 8|
|**11**|**Contact information. . . . . . . . . . . . . . . . . . . . . .  8**|
|**12**|**Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  9**|



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Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. 

**© NXP B.V. 2007.** 

**All rights reserved.** 

For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com **Date of release: 13 September 2007 Document identifier: BYV34X-600_1**