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BYV32E-200
Fast / Ultrafast Diode, 200 V, 10 A, Dual Common Cathode, 1.15 V, 25 ns, 125 A
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- Manufacturer: WEEN SEMICONDUCTORS
- Product type: Fast & Ultrafast Recovery Rectifier Diodes
- Repetitive Reverse Voltage Vrrm Max:200V; Forward Current If(AV):10A; Diode Configuration:Dual Common Cathode; Forward Voltage VF Max:1.15V; Reverse Recovery Time trr Max:25ns; Forward Surge Curr
- SVHC: No SVHC (17-Dec-2015)
- No. of Pins: 3 Pin
- Product Range: BYV32
- Qualification: -
- Diode Case Style: TO-220AB
- Diode Configuration: Dual Common Cathode
- Forward Voltage Max: 1.15V
- Forward Surge Current: 125A
- Reverse Recovery Time: 25ns
- Average Forward Current: 10A
- Operating Temperature Max: 150°C
- Repetitive Peak Reverse Voltage: 200V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.353 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**BYV32E-200** ## **Dual rugged ultrafast rectifier diode, 20 A, 200 V** **Rev. 04 — 27 February 2009** **Product data sheet** ## **1. Product profile** ## **1.1 General description** Ultrafast dual epitaxial rectifier diode in a SOT78 (TO-220AB) plastic package. ## **1.2 Features and benefits** - High reverse voltage surge capability - High thermal cycling performance - Low thermal resistance - Soft recovery characteristic minimizes power consuming oscillations - Very low on-state loss ## **1.3 Applications** - Output rectifiers in high-frequency switched-mode power supplies ## **1.4 Quick reference data** **Table 1. Quick reference** |**Symbol**<br>**Parameter**|**Conditions**<br>**Min**<br>**Typ**<br>**Max**<br>**Unit**| |---|---| |VRRM<br>repetitive peak<br>reverse voltage|-<br>-<br>200<br>V| |IO(AV)<br>average output<br>current|square-wave pulse; δ = 0.5;<br>Tmb≤115 °C; both diodes<br>conducting; seeFigure 1<br>;<br>seeFigure 2<br>-<br>-<br>20<br>A| |IRRM<br>repetitive peak<br>reverse current|tp= 2 µs; δ = 0.001<br>-<br>-<br>0.2<br>A| |VESD<br>electrostatic<br>discharge voltage|HBM; C = 250 pF; R = 1.5<br>kΩ; all pins<br>-<br>-<br>8<br>kV| |**Dynamic characteristics**|| |trr<br>reverse recovery<br>time|IF= 1 A; VR= 30 V;<br>dIF/dt = 100 A/µs;<br>Tj= 25 °C; ramp recovery;<br>seeFigure 5<br>-<br>20<br>25<br>ns| ||IR= 1 A; IF= 0.5 A;<br>Tj= 25 °C; step recovery;<br>measured at reverse current<br>= 0.25 A; seeFigure 6<br>-<br>10<br>20<br>ns| |**Static characteristics**|| |VF<br>forward voltage|IF= 8 A; Tj= 150 °C; see<br>Figure 4<br>-<br>0.72<br>0.85<br>V| **==> picture [81 x 42] intentionally omitted <==** **BYV32E-200** **NXP Semiconductors** **Dual rugged ultrafast rectifier diode, 20 A, 200 V** ## **2. Pinning information** ## **Table 2. Pinning information** |**Pin**<br>**Symbol**<br>**Description**<br>**Simplified**|**outline**<br>**Graphic symbol**|**outline**<br>**Graphic symbol**| |---|---|---| |1<br>A1<br>anode 1<br>2<br>K<br>cathode<br>3<br>A2<br>anode 2<br>mb<br>K<br>mounting base; cathode|1<br>2<br>mb<br>3<br>A1|sym125<br>A2<br><br>K| **SOT78 (TO-220AB; SC-46)** ## **3. Ordering information** |**Table 3.**<br>**Ordering information**|**Table 3.**<br>**Ordering information**| |---|---| |**Type number**|**Package**| ||**Name**<br>**Description**<br>**Version**| |BYV32E-200|TO-220AB;<br>SC-46<br>plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead<br>TO-220AB<br>SOT78| © NXP B.V. 2009. All rights reserved. BYV32E-200_4 **Product data sheet** **Rev. 04 — 27 February 2009** **2 of 9** **BYV32E-200** **NXP Semiconductors** **Dual rugged ultrafast rectifier diode, 20 A, 200 V** ## **4. Limiting values** **Table 4. Limiting values** _In accordance with the Absolute Maximum Rating System (IEC 60134)._ |**Symbol**<br>**Parameter**|**Conditions**<br>**Min**<br>**Max**<br>**Unit**| |---|---| |VRRM<br>repetitive peak reverse<br>voltage|-<br>200<br>V| |VRWM<br>crest working reverse<br>voltage|-<br>200<br>V| |VR<br>reverse voltage|DC<br>-<br>200<br>V| |IO(AV)<br>average output current|square-wave pulse; δ = 0.5; Tmb≤115 °C; both<br>diodes conducting; seeFigure 1<br>;see Figure 2<br>-<br>20<br>A| |IFRM<br>repetitive peak forward<br>current|δ = 0.5; tp= 25 µs; Tmb≤115 °C; per diode<br>-<br>20<br>A| |IFSM<br>non-repetitive peak<br>forward current|tp= 8.3 ms; sine-wave pulse; Tj(init)= 25 °C; per<br>diode<br>-<br>137<br>A| ||tp= 10 ms; sine-wave pulse; Tj(init)= 25 °C; per<br>diode<br>-<br>125<br>A| |IRRM<br>repetitive peak reverse<br>current|δ = 0.001; tp= 2 µs<br>-<br>0.2<br>A| |IRSM<br>non-repetitive peak<br>reverse current|tp= 100 µs<br>-<br>0.2<br>A| |Tstg<br>storage temperature|-40<br>150<br>°C| |Tj<br>junction temperature|-<br>150<br>°C| |VESD<br>electrostatic discharge<br>voltage|HBM; C = 250 pF; R = 1.5 kΩ; all pins<br>-<br>8<br>kV| **==> picture [498 x 266] intentionally omitted <==** **----- Start of picture text -----**<br> 003aac978 003aac979<br>12 15<br>δ = 1<br>Ptot a = 1.57 Ptot<br>(W) (W)<br>1.9<br>0.5<br>2.2<br>8 10<br>2.8<br>4.0 0.2<br>0.1<br>4 5<br>0 0<br>0 4 8 12 0 5 10 15<br>IF(AV) (A) IF(AV) (A)<br>Fig 1. Forward power dissipation as a function of Fig 2. Forward power dissipation as a function of<br>average forward current; sinusoidal waveform; average forward current; square waveform;<br>maximum values maximum values<br>**----- End of picture text -----**<br> © NXP B.V. 2009. All rights reserved. BYV32E-200_4 **Product data sheet** **Rev. 04 — 27 February 2009** **3 of 9** **BYV32E-200** **NXP Semiconductors** **Dual rugged ultrafast rectifier diode, 20 A, 200 V** ## **5. Thermal characteristics** ## **Table 5. Thermal characteristics** |**Symbol**<br>**Parameter**|**Conditions**<br>**Min**<br>**Typ**<br>**Max**<br>**Unit**| |---|---| |Rth(j-mb)<br>thermal resistance from<br>junction to mounting<br>base|with heatsink compound; both diodes<br>conducting<br>-<br>-<br>1.6<br>K/W| ||with heatsink compound; per diode; see<br>Figure 3<br>-<br>-<br>2.4<br>K/W| |Rth(j-a)<br>thermal resistance from<br>junction to ambient|-<br>60<br>-<br>K/W| **==> picture [233 x 149] intentionally omitted <==** **----- Start of picture text -----**<br> 003aac980<br>10<br>Zth(j-mb)<br>(K/W)<br>1<br>10 [−][1] P δ = tp<br>T<br>10 [−][2]<br>tp t<br>T<br>10 [−][3]<br>10 [−][6] 10 [−][5] 10 [−][4] 10 [−][3] 10 [−][2] 10 [−][1] 1 10<br>tp (s)<br>**----- End of picture text -----**<br> **Fig 3. Transient thermal impedance from junction to mounting base as a function of pulse width** ## **6. Characteristics** ## **Table 6. Characteristics** |**Symbol**<br>**Parameter**|**Conditions**<br>**Min**<br>**Typ**<br>**Max**<br>**Unit**| |---|---| |**Static characteristics**|| |VF<br>forward voltage|IF= 20 A; Tj= 25 °C<br>-<br>1<br>1.15<br>V| ||IF= 8 A; Tj= 150 °C; seeFigure 4<br>-<br>0.72<br>0.85<br>V| |IR<br>reverse current|VR= 200 V; Tj= 100 °C<br>-<br>0.2<br>0.6<br>mA| ||VR= 200 V; Tj= 25 °C<br>-<br>6<br>30<br>µA| |**Dynamic characteristics**|| |Qr<br>recovered charge|IF= 2 A; VR= 30 V; dIF/dt = 20 A/µs;<br>Tj= 25 °C<br>-<br>8<br>12.5<br>nC| |trr<br>reverse recovery time|IF= 1 A; VR= 30 V; dIF/dt = 100 A/µs;<br>ramp recovery; Tj= 25 °C; seeFigure 5<br>-<br>20<br>25<br>ns| ||IF= 0.5 A; IR= 1 A; step recovery;<br>measured at reverse current = 0.25 A;<br>Tj= 25 °C; seeFigure 6<br>-<br>10<br>20<br>ns| |VFR<br>forward recovery<br>voltage|IF= 1 A; dIF/dt = 10 A/µs; Tj= 25 °C; see<br>Figure 7<br>-<br>-<br>1<br>V| © NXP B.V. 2009. All rights reserved. BYV32E-200_4 **Product data sheet** **Rev. 04 — 27 February 2009** **4 of 9** **BYV32E-200** **NXP Semiconductors** **Dual rugged ultrafast rectifier diode, 20 A, 200 V** **==> picture [498 x 501] intentionally omitted <==** **----- Start of picture text -----**<br> 003aac981<br>32 dlF<br>IF<br>dt<br>IF<br>(A)<br>24<br>trr<br>(1) (2) (3) time<br>16<br>25 %<br>Qr 100 %<br>8<br>IR IRM<br>003aac562<br>0<br>0 0.4 0.8 1.2 1.6<br>VF (V) Fig 5. Reverse recovery definitions; ramp recovery<br>Fig 4. Forward current as a function of forward<br>voltage<br>IF<br>IF<br>IF<br>trr<br>time time<br>0.25 x IR VF<br>Qr<br>VFRM<br>IR<br>IR 003aac563 VF<br>time<br>Fig 6. Reverse recovery definitions; step recovery 001aab912<br>Fig 7. Forward recovery definitions<br>**----- End of picture text -----**<br> © NXP B.V. 2009. All rights reserved. BYV32E-200_4 **Product data sheet** **Rev. 04 — 27 February 2009** **5 of 9** **BYV32E-200** **NXP Semiconductors** **Dual rugged ultrafast rectifier diode, 20 A, 200 V** ## **7. Package outline** ## **Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB** **==> picture [26 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> SOT78<br>**----- End of picture text -----**<br> **==> picture [482 x 565] intentionally omitted <==** **----- Start of picture text -----**<br> E A<br>p A1<br>q mounting<br>D1 base<br>D<br>L1 [(1)] L2 [(1)]<br>Q<br>b1 [(2)]<br>L (3×)<br>b2 [(2)]<br>(2×)<br>1 2 3<br>b(3×) c<br>e e<br>0 5 10 mm<br>scale<br>DIMENSIONS (mm are the original dimensions)<br>UNIT A A1 b b1 [(2)] b2 [(2)] c D D1 E e L L1 [(1)] L2 [(1)] p q Q<br>max.<br>4.7 1.40 0.9 1.6 1.3 0.7 16.0 6.6 10.3 15.0 3.30 3.8 3.0 2.6<br>mm 2.54 3.0<br>4.1 1.25 0.6 1.0 1.0 0.4 15.2 5.9 9.7 12.8 2.79 3.5 2.7 2.2<br>Notes<br>1. Lead shoulder designs may vary.<br>2. Dimension includes excess dambar.<br>OUTLINE REFERENCES EUROPEAN<br>ISSUE DATE<br>VERSION IEC JEDEC JEITA PROJECTION<br>08-04-23<br>SOT78 3-lead TO-220AB SC-46<br>08-06-13<br>**----- End of picture text -----**<br> **Fig 8. Package outline SOT78 (TO-220AB)** © NXP B.V. 2009. All rights reserved. BYV32E-200_4 **Product data sheet** **Rev. 04 — 27 February 2009** **6 of 9** **BYV32E-200** **NXP Semiconductors** **Dual rugged ultrafast rectifier diode, 20 A, 200 V** ## **8. Revision history** ## **Table 7. Revision history** |**Document ID**|**Release date**<br>**Data sheet status**|**Change notice**|**Supersedes**| |---|---|---|---| |BYV32E-200_4|20090227<br>Product data sheet|-|BYV32E_SERIES_3| |Modifications:|**•** The format of this data sheet has been|redesigned to comply with the new identity|| ||guidelines of NXP Semiconductors.||| ||**•** Legal texts have been adapted to the new company name where appropriate.||| ||**•** Package outline updated.||| ||**•** Type number BYV32E-200 separated from data sheet BYV32E_SERIES_3||| |BYV32E_SERIES_3|20010301<br>Product specification|-|BYV32E_SERIES_2| |BYV32E_SERIES_2|19980701<br>Product specification|-|BYV32EB_SERIES_1| |BYV32EB_SERIES_1|19960801<br>Product specification|-|-| © NXP B.V. 2009. All rights reserved. BYV32E-200_4 **Product data sheet** **Rev. 04 — 27 February 2009** **7 of 9** **BYV32E-200** **NXP Semiconductors** **Dual rugged ultrafast rectifier diode, 20 A, 200 V** ## **9. Legal information** ## **9.1 Data sheet status** |**Document status** **[1]**<br>**[2]**|**Product status[3]**|**Definition**| |---|---|---| |Objective [short] data sheet|Development|This document contains data from the objective specification for product development.| |Preliminary [short] data sheet|Qualification|This document contains data from the preliminary specification.| |Product [short] data sheet|Production|This document contains the product specification.| - [1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. ## **9.2 Definitions** **Draft** — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. **Short data sheet** — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. ## **9.3 Disclaimers** **General** — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. **Right to make changes** — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. **Suitability for use** — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. **Applications** — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. **Quick reference data** — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. **Limiting values** — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. **Terms and conditions of sale** — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. **No offer to sell or license** — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. ## **9.4 Trademarks** Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. ## **10. Contact information** For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com © NXP B.V. 2009. All rights reserved. BYV32E-200_4 **Product data sheet** **Rev. 04 — 27 February 2009** **8 of 9** **BYV32E-200** **NXP Semiconductors** **Dual rugged ultrafast rectifier diode, 20 A, 200 V** ## **11. Contents** |**1**|**Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1**| |---|---| |1.1|General description . . . . . . . . . . . . . . . . . . . . . .1| |1.2|Features and benefits. . . . . . . . . . . . . . . . . . . . .1| |1.3|Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1| |1.4|Quick reference data . . . . . . . . . . . . . . . . . . . . .1| |**2**|**Pinning information. . . . . . . . . . . . . . . . . . . . . . .2**| |**3**|**Ordering information. . . . . . . . . . . . . . . . . . . . . .2**| |**4**|**Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3**| |**5**|**Thermal characteristics . . . . . . . . . . . . . . . . . . .4**| |**6**|**Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .4**| |**7**|**Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .6**| |**8**|**Revision history. . . . . . . . . . . . . . . . . . . . . . . . . .7**| |**9**|**Legal information. . . . . . . . . . . . . . . . . . . . . . . . .8**| |9.1|Data sheet status . . . . . . . . . . . . . . . . . . . . . . . .8| |9.2|Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8| |9.3|Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8| |9.4|Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . .8| |**10**|**Contact information. . . . . . . . . . . . . . . . . . . . . . .8**| Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. **==> picture [84 x 52] intentionally omitted <==** **All rights reserved.** **© NXP B.V. 2009.** For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com **Date of release: 27 February 2009 Document identifier: BYV32E-200_4**
Updated at June 4, 2026
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