BYV29-500

## _**DISCRETE SEMICONDUCTORS**_ 

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DATA SHEET<br>**----- End of picture text -----**<br>


**BYV29 series** Rectifier diodes ultrafast 

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Product specification September 1998 

**NXP Semiconductors** 

**Product specification** 

## **Rectifier diodes ultrafast** 

**BYV29 series** 

|**FEATURES**|||**SYMBOL**|**SYMBOL**|**SYMBOL**|**SYMBOL**|**SYMBOL**|**SYMBOL**|||||||||||**QUICK REFERENCE DATA**|**QUICK REFERENCE DATA**|**QUICK REFERENCE DATA**|**QUICK REFERENCE DATA**|**QUICK REFERENCE DATA**|**QUICK REFERENCE DATA**|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
||||||||||||||||||||||||||
|• Low forward volt drop||||||||||||||||||||VR= 300 V/|||400|V/ 500 V|
|• Fast switching|||||||||||||||||||||||||
|• Soft recovery characteristic<br>• High thermal cycling performance|||||k<br>1||||||||||a<br>2|||||VF ≤|||1.03|V|
|• Low thermal resistance|||||||||||||||||||||IF(AV)= 9 A||||
||||||||||||||||||||||trr ≤||60 ns||
|**GENERAL DESCRIPTION**|||**PINNING**|||||||||||||||||**SOD59 (TO220AC)**|||||
|Ultra-fast, epitaxial rectifier diodes<br>intended for use as output rectifiers<br>in high frequency switched mode||||**PIN**<br>1|||**DESCRIPTION**<br>cathode|||||||||||||||tab|||
|power supplies.<br>The BYV29 series is supplied in the<br>conventional<br>leaded<br>SOD59<br>(TO220AC) package.||||2<br>tab|||anode<br>cathode||||||||||||||||1<br>2||



**LIMITING VALUES** Limiting values in accordance with the Absolute Maximum System (IEC 134). 

|||**SYMBOL**<br>**PARAMETER**|**SYMBOL**<br>**PARAMETER**||||**CONDITIONS**|**CONDITIONS**|**CONDITIONS**|**CONDITIONS**||||||**MIN.**||||**MAX.**|**MAX.**|||||**UNIT**||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|||||||||||||||**BYV29**||||**-300**||**-400**||||**-500**||||||
|||VRRM<br>Peak repetitive reverse voltage||||||||||||||-||300||400||||500||V||||
|||VRWM<br>Crest working reverse voltage||||||||||||||-||300||400||||500||V||||
|||VR<br>Continuous reverse voltage||||||||||||||-||300||400||||500||V||||
|||IF(AV)<br>Average forward current1|||||square wave;δ= 0.5;<br>Tmb ≤123 ˚C|||||||||-||||9||||||A||||
|||IFRM<br>Repetitive peak|||forward current<br>t = 25µs;δ= 0.5;|||||||||||-||||18||||||A||||
||||||||Tmb ≤123||˚C|||||||||||||||||||||
|||IFSM<br>Non-repetitive peak forward<br>t = 10 ms||||||||||||||-||||100||||||A||||
|||current.|||||t = 8.3 ms|||||||||-||||110||||||A||||
||||||||sinusoidal; with||||reapplied|||||||||||||||||||
|||VRRM(max)<br>Tstg<br>Storage temperature<br>Tj<br>Operating junctiontemperature||||||||||||||-40<br>-||||150<br>150||||||˚C<br>˚C||||
|||**THERMAL RESISTANCES**||||||||||||||||||||||||||||
|||**SYMBOL**<br>**PARAMETER**|||||**CONDITIONS**|||||||||||**MIN.**||**TYP.**||||**MAX.**||**UNIT**||||
|||Rth j-mb<br>Thermal resistance<br>mounting base||||junction to||||||||||||-||-||||2.5||K/W||||
|||Rth j-a<br>Thermal resistance<br>ambient||||junction to<br>in||free air.||||||||||-||60||||-||K/W||||
|||||||||||||||||||||||||||||||



**1** Neglecting switching and reverse current losses. 

September 1998 

Rev 1.300 

1 

NXP Semiconductors 

Product specification 

## Rectifier diodes ultrafast 

## BYV29 series 

|||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|ultrafast||||||||||||||||
|||||||||||||||||
|**ELECTRICAL CHARACTERISTICS**||||||||||||||||
|Tj= 25 ˚C unless otherwise stated<br>**SYMBOL**<br>**PARAMETER**|||**CONDITIONS**||||**MIN.**|**TYP.**||**MAX.**|**UNIT**|||||
|VF|Forward voltage||IF= 8 A; Tj= 150˚C<br>IF= 8 A||||-<br>-|0.90<br>1.05||1.03<br>1.25|V<br>V|||||
||||IF= 20 A||||-|1.20||1.40|V|||||
|IR|Reverse current||VR= VRRM||||-|2.0||50|µA|||||
|Qs|Reverse recovery charge||VR= VRRM; Tj= 100 ˚C<br>IF= 2 A to VR ≥30 V;||||-<br>-|0.1<br>40||0.35<br>60|mA<br>nC|||||
||||dIF/dt = 20 A/µs|||||||||||||
|trr|Reverse recovery time||IF= 1 A to VR ≥30 V;||||-|50||60|ns|||||
||||dIF/dt = 100 A/µs|||||||||||||
|Irrm|Peak reverse recovery current||IF= 10 A to VR ≥30 V;||||-|4.0||5.5|A|||||
|Vfr|Forward recoveryvoltage||dIF/dt = 50 A/µs; Tj= 100˚C<br>IF= 10 A; dIF/dt = 10 A/µs||||-|2.5||-|V|||||



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dI 15 PF / W BYV29 Tmb(max) / C112.5<br>I F dt F Vo = 0.8900 VRs = 0.0190 Ohms D = 1.0<br>0.5<br>trr 10 125<br>time 0.2<br>0.1<br>Q s 10% 100% 5 I tp D = Ttp 137.5<br>I<br>R I T t<br>rrm 0 150<br>0 5 10 15<br>IF(AV) / A<br>Fig.1.   Definition of trr, Qs and Irrm Fig.3.   Maximum forward dissipation PF = f(IF(AV));<br>square wave where IF(AV) =IF(RMS) x √D.<br>PF / W BYV29 Tmb(max) / C<br>I F 12 120<br>Vo = 0.89V<br>Rs = 0.019 Ohms a = 1.57<br>10 125<br>1.9<br>2.2<br>8 130<br>2.8<br>time 4<br>6 135<br>V<br>F<br>4 140<br>V fr 2 145<br>V F 0 150<br>0 2 4 6 8 10<br>time IF(AV) / A<br>Fig.2.   Definition of Vfr Fig.4.   Maximum forward dissipation PF = f(IF(AV));F = f(IF(AV)); = f(IF(AV));F(AV)););<br>**----- End of picture text -----**<br>


Fig.4.   Maximum forward dissipation PF = f(IF(AV));F = f(IF(AV)); = f(IF(AV));F(AV));); sinusoidal current waveform where a = form factor = IF(RMS) / IF(AV). 

September 1998 

Rev 1.300 

2 

NXP Semiconductors 

Product specification 

## Rectifier diodes ultrafast 

## BYV29 series 

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IF / A BYW29<br>30<br>Tj=150  C<br>Tj=25  C<br>20<br>typ max<br>10<br>0<br>0 0.5 1 1.5 2<br>VF / V<br>**----- End of picture text -----**<br>


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trr / ns<br>1000<br>IF=10 A<br>100<br>1A<br>10<br>Tj = 25 C<br>Tj = 100C<br>1<br>1 10 100<br>dIF/dt (A/us)<br>**----- End of picture text -----**<br>


Fig.5.   Maximum trr at Tj = 25˚C and 100˚C 

Fig.7.   Typical and maximum forward characteristic IF = f(VF); parameter Tj 

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Irrm / A<br>10<br>IF=10A<br>1<br>IF=1A<br>0.1<br>Tj = 25 C<br>Tj = 100C<br>0.01<br>1 10 100<br>-dIF/dt (A/us)<br>**----- End of picture text -----**<br>


Fig.6.   Maximum Irrm at Tj = 25˚C and 100˚C. 

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Qs / nC<br>1000<br>IF = 10 A<br>100<br>2 A<br>10<br>1<br>1.0 10 100<br>-dIF/dt (A/us)<br>**----- End of picture text -----**<br>


Fig.8.   Maximum Qs at Tj = 25˚C 

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Transient thermal impedance, Zth j-mb (K/W)<br>10<br>1<br>0.1<br>0.01 PD tp D = tp<br>T<br>T t<br>0.001<br>1us 10us 100us 1ms 10ms 100ms 1s 10s<br>pulse width, tp (s) BYV29<br>Fig.9.   Transient thermal impedance Zth j-mb= f(tp)<br>**----- End of picture text -----**<br>


September 1998 

Rev 1.300 

3 

NXP Semiconductors 

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NXP  Semiconductors Product specification<br>**----- End of picture text -----**<br>


Rectifier diodes ultrafast 

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Rectifier diodes BYV29 series<br> ultrafast<br>MECHANICAL DATA<br>Dimensions in mm<br>4,5<br>Net Mass: 2 g max<br>10,3<br>max<br>1,3<br>3,7<br>2,8<br>5,9<br>min<br>15,8<br>max<br>3,0 max<br>not tinned<br>3,0<br>13,5<br>min<br>1,3<br>max 1 2<br>(2x) 0,9 max (2x)<br>0,6<br>5,08 2,4<br>Fig.10.  SOD59 (TO220AC). pin 1 connected to mounting base.<br>**----- End of picture text -----**<br>


**Notes** 

1. Refer to mounting instructions for TO220 envelopes. 2. Epoxy meets UL94 V0 at 1/8". 

September 1998 

Rev 1.300 

4 

NXP Semiconductors 

## Legal information 

## **DATA SHEET STATUS** 

|**DATA SHEET STATUS**|||
|---|---|---|
|**DOCUMENT**<br>**STATUS**(1)|**PRODUCT**<br>**STATUS**(2)|**DEFINITION**|
|Objective data sheet|Development|This document contains data from the objective specification for product<br>development.|
|Preliminarydata sheet|Qualification|This document contains data from thepreliminaryspecification.|
|Product data sheet|Production|This document contains theproduct specification.|



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