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BYV26E-TAP
Fast / Ultrafast Diode, 1 kV, 1 A, Single, 2.5 V, 75 ns, 30 A
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: VISHAY
- Product type: Fast & Ultrafast Recovery Rectifier Diodes
- Repetitive Reverse Voltage Vrrm Max:1kV; Forward Current If(AV):1A; Diode Configuration:Single; Forward Voltage VF Max:2.5V; Reverse Recovery Time trr Max:75ns; Forward Surge Current
- SVHC: No SVHC (04-Feb-2026)
- No. of Pins: 2 Pin
- Product Range: BYV26
- Qualification: AEC-Q101
- Diode Case Style: SOD-57
- Diode Configuration: Single
- Forward Voltage Max: 2.5V
- Forward Surge Current: 30A
- Reverse Recovery Time: 75ns
- Average Forward Current: 1A
- Operating Temperature Max: 175°C
- Repetitive Peak Reverse Voltage: 1kV
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.275 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
**==> picture [59 x 48] intentionally omitted <==** www.vishay.com ## **BYV26A, BYV26B, BYV26C, BYV26D, BYV26E** ## Vishay Semiconductors ## **Ultra-Fast Avalanche Sinterglass Diode** ## **FEATURES** **==> picture [157 x 101] intentionally omitted <==** **----- Start of picture text -----**<br> 949539<br>**----- End of picture text -----**<br> ## **MECHANICAL DATA** ## **Case:** SOD-57 **Terminals:** plated axial leads, solderable per MIL-STD-750, method 2026 - Glass passivated junction - Hermetically sealed package - Very low switching losses - Low reverse current - High reverse voltage • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 ## **APPLICATIONS** - Switched mode power supplies - High-frequency inverter circuits **Polarity:** color band denotes cathode end **Mounting position:** any **Weight:** approx. 369 mg ## **ORDERING INFORMATION** (Example) |**ORDERING INFORMATION**(Example)|**ORDERING INFORMATION**(Example)|**ORDERING INFORMATION**(Example)|**ORDERING INFORMATION**(Example)| |---|---|---|---| |**DEVICE NAME**|**ORDERING CODE**|**TAPED UNITS**|**MINIMUM ORDER QUANTITY**| |BYV26E|BYV26E-TR|5000 per 10" tape and reel|25 000| |BYV26E|BYV26E-TAP|5000 per ammopack|25 000| ## **PARTS TABLE** |**PARTS TABLE**|**PARTS TABLE**|**PARTS TABLE**| |---|---|---| |**PART**|**TYPE DIFFERENTIATION**|**PACKAGE**| |BYV26A|VR= 200 V; IF(AV)= 1 A|SOD-57| |BYV26B|VR= 400 V; IF(AV)= 1 A|SOD-57| |BYV26C|VR= 600 V; IF(AV)= 1 A|SOD-57| |BYV26D|VR= 800 V; IF(AV)= 1 A|SOD-57| |BYV26E|VR= 1000 V; IF(AV)= 1 A|SOD-57| ## **ABSOLUTE MAXIMUM RATINGS** (Tamb = 25 °C, unless otherwise specified) |**ABSOLUTE MAXIMUM RATINGS**(Tamb= 25 °C,unless otherwise specified)|**ABSOLUTE MAXIMUM RATINGS**(Tamb= 25 °C,unless otherwise specified)|**ABSOLUTE MAXIMUM RATINGS**(Tamb= 25 °C,unless otherwise specified)|**ABSOLUTE MAXIMUM RATINGS**(Tamb= 25 °C,unless otherwise specified)|**ABSOLUTE MAXIMUM RATINGS**(Tamb= 25 °C,unless otherwise specified)|**ABSOLUTE MAXIMUM RATINGS**(Tamb= 25 °C,unless otherwise specified)| |---|---|---|---|---|---| |**PARAMETER**|**TEST CONDITION**|**PART**|**SYMBOL**|**VALUE**|**UNIT**| |Reverse voltage = repetitive peak reverse<br>voltage|See electrical characteristics|BYV26A|VR= VRRM|200|V| |||BYV26B|VR= VRRM|400|V| |||BYV26C|VR= VRRM|600|V| |||BYV26D|VR= VRRM|800|V| |||BYV26E|VR= VRRM|1000|V| |Peak forward surge current|tp= 10 ms, half sine wave||IFSM|30|A| |Average forward current|||IF(AV)|1|A| |Non repetitive reverse avalanche energy|I(BR)R= 1 A, inductive load||ER|10|mJ| |Junction and storage temperature range|||Tj= Tstg|- 55 to + 175|°C| |**MAXIMUM THERMAL RESISTANCE**(Tamb= 25 °C, unless otherwise specified)|**MAXIMUM THERMAL RESISTANCE**(Tamb= 25 °C, unless otherwise specified)|**MAXIMUM THERMAL RESISTANCE**(Tamb= 25 °C, unless otherwise specified)|**MAXIMUM THERMAL RESISTANCE**(Tamb= 25 °C, unless otherwise specified)|**MAXIMUM THERMAL RESISTANCE**(Tamb= 25 °C, unless otherwise specified)| |---|---|---|---|---| |**PARAMETER**|**TEST CONDITION**|**SYMBOL**|**VALUE**|**UNIT**| |Junction ambient|l = 10 mm, TL= constant|RthJA|45|K/W| Rev. 1.8, 04-Sep-12 Document Number: 86040 **1** For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **BYV26A, BYV26B, BYV26C, BYV26D, BYV26E** **==> picture [59 x 48] intentionally omitted <==** www.vishay.com ## Vishay Semiconductors |**ELECTRICAL CHARACTERISTICS**(Tamb= 25 °C, unless otherwise specified)|**ELECTRICAL CHARACTERISTICS**(Tamb= 25 °C, unless otherwise specified)|**ELECTRICAL CHARACTERISTICS**(Tamb= 25 °C, unless otherwise specified)|**ELECTRICAL CHARACTERISTICS**(Tamb= 25 °C, unless otherwise specified)|**ELECTRICAL CHARACTERISTICS**(Tamb= 25 °C, unless otherwise specified)|**ELECTRICAL CHARACTERISTICS**(Tamb= 25 °C, unless otherwise specified)|**ELECTRICAL CHARACTERISTICS**(Tamb= 25 °C, unless otherwise specified)|**ELECTRICAL CHARACTERISTICS**(Tamb= 25 °C, unless otherwise specified)| |---|---|---|---|---|---|---|---| |**PARAMETER**|**TEST CONDITION**|**PART**|**SYMBOL**|**MIN.**|**TYP.**|**MAX.**|**UNIT**| |Forward voltage|IF= 1 A||VF|-|-|2.5|V| ||IF= 1 A, Tj= 175 °C||VF|-|-|1.3|V| |Reverse current|VR= VRRM||IR|-|-|5|μA| ||VR= VRRM, Tj= 150 °C||IR|-|-|100|μA| |Reverse breakdown voltage|IR= 100 μA|BYV26A|V(BR)R|300|-|-|V| |||BYV26B|V(BR)R|500|-|-|V| |||BYV26C|V(BR)R|700|-|-|V| |||BYV26D|V(BR)R|900|-|-|V| |||BYV26E|V(BR)R|1100|-|-|V| |Reverse recovery time|IF= 0.5 A, IR= 1 A, iR= 0.25 A|BYV26A|trr|-|-|30|ns| |||BYV26B|trr|-|-|30|ns| |||BYV26C|trr|-|-|30|ns| |||BYV26D|trr|-|-|75|ns| |||BYV26E|trr|-|-|75|ns| ## **TYPICAL CHARACTERISTICS** (Tamb = 25 C, unless otherwise specified) **==> picture [172 x 351] intentionally omitted <==** **----- Start of picture text -----**<br> 600<br>VR = VRRM<br>500 RthJA = 45 K/W<br>400 RthJA = 100 K/W 200 V<br>400 V<br>300<br>600 V<br>200<br>800 V<br>100<br>1000 V<br>0<br>0 40 80 120 160 200<br>959728 Tj - Junction Temperature (°C)<br>1000<br>V R = V RRM<br>100<br>10<br>1<br>0.1<br>0 40 80 120 160 200<br>959729 Tj - Junction Temperature (°C)<br> - Max. Reverse Power Dissipation (mW)<br>R<br>P<br> - Reverse Current (μA)<br>IR<br>**----- End of picture text -----**<br> Fig. 1 - Max. Reverse Power Dissipation vs. Junction Temperature Fig. 2 - Max. Reverse Current vs. Junction Temperature **==> picture [172 x 346] intentionally omitted <==** **----- Start of picture text -----**<br> 1.2<br>1.0<br>RthJA = 45 K/W<br>0.8<br>0.6<br>0.4<br>RthJA = 100 K/W<br>0.2<br>0<br>0 40 80 120 160 200<br>959730 Tamb - Ambient Temperature (°C)<br>10<br>T j = 175 °C<br>1<br>T j = 25 ° C<br>0.1<br>0.01<br>0.001<br>0 1 2 3 4 5 6 7<br>959731 VF - Forward Voltage (V)<br> - Average Forward Current (A)<br>IFAV<br> - Forward Current (A)<br>IF<br>**----- End of picture text -----**<br> Fig. 3 - Max. Average Forward Current vs. Ambient Temperature Fig. 4 - Max. Reverse Current vs. Junction Temperature Rev. 1.8, 04-Sep-12 Document Number: 86040 **2** For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **BYV26A, BYV26B, BYV26C, BYV26D, BYV26E** **==> picture [59 x 48] intentionally omitted <==** www.vishay.com ## Vishay Semiconductors **==> picture [168 x 150] intentionally omitted <==** **----- Start of picture text -----**<br> 40<br>f = 1 MHz<br>35<br>30<br>BYV26C<br>25<br>20<br>15<br>10<br>5<br>0<br>0.1 1 10 100<br>16380 VR - Reverse Voltage (V)<br> - DiodeCapacitance (pF)<br>D<br>C<br>**----- End of picture text -----**<br> Fig. 5 - Diode Capacitance vs. Reverse Voltage **==> picture [169 x 150] intentionally omitted <==** **----- Start of picture text -----**<br> 40<br>f = 1 MHz<br>35<br>30<br>BYV26E<br>25<br>20<br>15<br>10<br>5<br>0<br>0.1 1 10 100<br>16381 VR - Reverse Voltage (V)<br> - Diode Capacitance (pF)<br>D<br>C<br>**----- End of picture text -----**<br> Fig. 6 - Diode Capacitance vs. Reverse Voltage ## **PACKAGE DIMENSIONS** in millimeters (inches): **SOD-57** **==> picture [385 x 182] intentionally omitted <==** **----- Start of picture text -----**<br> 26 (1.024) min. 4 (0.157) max. 26 (1.024) min.<br>20543<br>0.82 (0.032) max.<br>3.6 (0.142) max.<br>**----- End of picture text -----**<br> Rev. 1.8, 04-Sep-12 Document Number: 86040 **3** For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **Legal Disclaimer Notice** Vishay www.vishay.com **==> picture [59 x 48] intentionally omitted <==** ## **Disclaimer** ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. ## **Material Category Policy** **Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant.** **Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.** **Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards.** Revision: 02-Oct-12 Document Number: 91000 **1**
Updated at June 7, 2026
Vishay is a global leader in the manufacturing of discrete semiconductors and passive electronic components. Renowned for its exceptional quality and engineering expertise, the company produces highly reliable solutions that drive innovation across the industrial, automotive, telecommunications, and consumer electronics markets. From advanced factory automation to vehicle electrification, Vishay components provide the foundational building blocks for modern electronic design. The company's expansive portfolio is heavily focused on efficient power management, signal routing, and energy storage. Within its passive component lineup, Vishay is recognized for its extensive array of high-performance capacitors, including robust aluminium electrolytic, film, and polymer variants, alongside highly efficient power inductors. In the realm of discrete semiconductors, Vishay is a premier manufacturer of single and dual MOSFETs, as well as a vast selection of Schottky, Zener, and fast-recovery rectifier diodes designed for demanding power applications. Furthermore, Vishay delivers industry-leading circuit protection and thermal management solutions. With a broad offering of transient voltage suppressors (TVS diodes) and temperature-sensing NTC thermistors, these components are engineered to safeguard sensitive circuitry against both electrical and thermal overstress. By combining this vital mix of advanced discretes and passives, Vishay enables engineers to develop robust, space-saving, and highly resilient electronic systems.
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