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BYG22D-E3/TR3
Fast / Ultrafast Diode, 200 V, 2 A, Single, 1.1 V, 25 ns, 35 A
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: VISHAY
- Product type: Fast & Ultrafast Recovery Rectifier Diodes
- Repetitive Reverse Voltage Vrrm Max:200V; Forward Current If(AV):2A; Diode Configuration:Single; Forward Voltage VF Max:1.1V; Reverse Recovery Time trr Max:25ns; Forward Surge Curre
- SVHC: Lead (04-Feb-2026)
- No. of Pins: 2 Pin
- Product Range: -
- Qualification: -
- Diode Case Style: DO-214AC (SMA)
- Diode Configuration: Single
- Forward Voltage Max: 1.1V
- Forward Surge Current: 35A
- Reverse Recovery Time: 25ns
- Average Forward Current: 2A
- Operating Temperature Max: 150°C
- Repetitive Peak Reverse Voltage: 200V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.151 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
**BYG22A, BYG22B, BYG22D** www.vishay.com Vishay General Semiconductor ## **Ultrafast Avalanche SMD Rectifier** ## **FEATURES** - Low profile package **==> picture [20 x 4] intentionally omitted <==** **----- Start of picture text -----**<br> Available<br>**----- End of picture text -----**<br> - Ideal for automated placement - Glass passivated pellet chip junction - Low reverse current - Low forward voltage - Soft recovery characteristic **==> picture [74 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> SMA (DO-214AC)<br>**----- End of picture text -----**<br> **==> picture [118 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> Cathode Anode<br>**----- End of picture text -----**<br> - Ultra fast reverse recovery time - Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C - AEC-Q101 qualified available ## **ADDITIONAL RESOURCES** 3D Models - Automotive ordering code: base P/NHE3 or P/NHM3 - Material categorization: for definitions of compliance please see ~~a~~ www.vishay.com/doc?99912 ## **TYPICAL APPLICATIONS** ## **PRIMARY CHARACTERISTICS** **==> picture [191 x 136] intentionally omitted <==** **----- Start of picture text -----**<br> ||| |---|---| |IF(AV)|2.0 A| |VRRM|50 V, 100 V, 200 V| |IFSM|35 A| |IR|1.0 μA| |VF at IF|1.1 V| |trr|25 ns| |ER|20 mJ| |TJ max.|150 °C| |Package|SMA (DO-214AC)| |Circuit configurations|Single| **----- End of picture text -----**<br> For use in high frequency rectification and freewheeling application in switching mode converters and inverters for consumer, computer, automotive, and telecommunication. ## **MECHANICAL DATA** **Case:** SMA (DO-214AC) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified Base P/NHM3_X - halogen-free, RoHS-compliant, and AEC-Q101 qualified (“_X” denotes revision code e.g. A, B,...) **Terminals:** matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3, M3, HE3, and HM3 suffix meet JESD 201 class 2 whisker test **Polarity:** color band denotes the cathode end **MAXIMUM RATINGS** (TA = 25 °C unless otherwise noted) **==> picture [487 x 125] intentionally omitted <==** **----- Start of picture text -----**<br> ||||||| |---|---|---|---|---|---| |PARAMETER|SYMBOL|BYG22A|BYG22B|BYG22D|UNIT| |Device marking code|BYG22A|BYG22B|BYG22D| |Maximum repetitive peak reverse voltage|VRRM|50|100|200|V| |Average forward current|IF(AV)|2.0|A| |Peak forward surge current 10 ms single halfsine-wave superimposed on rated load|IFSM|35|A| |Pulse energy in avalanche mode,| |non repetitive (inductive load switch off)|ER|20|mJ| |I(BR)R = 1 A, TJ = 25 °C| |Operating junction and storage temperature range|TJ, TSTG|-55 to +150|°C| **----- End of picture text -----**<br> Revision: 21-Feb-2020 Document Number: 88959 **1** For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **BYG22A, BYG22B, BYG22D** **==> picture [59 x 48] intentionally omitted <==** www.vishay.com Vishay General Semiconductor |**ELECTRICAL CHARACTERISTICS**(TA= 25 °C unless otherwise noted)|**ELECTRICAL CHARACTERISTICS**(TA= 25 °C unless otherwise noted)|**ELECTRICAL CHARACTERISTICS**(TA= 25 °C unless otherwise noted)|**ELECTRICAL CHARACTERISTICS**(TA= 25 °C unless otherwise noted)|**ELECTRICAL CHARACTERISTICS**(TA= 25 °C unless otherwise noted)|**ELECTRICAL CHARACTERISTICS**(TA= 25 °C unless otherwise noted)|**ELECTRICAL CHARACTERISTICS**(TA= 25 °C unless otherwise noted)|**ELECTRICAL CHARACTERISTICS**(TA= 25 °C unless otherwise noted)| |---|---|---|---|---|---|---|---| |**PARAMETER**|**TEST CONDITIONS**||**SYMBOL**|**BYG22A**|**BYG22B**|**BYG22D**|**UNIT**| |Maximum instantaneous<br>forward voltage|IF= 1.0 A|TJ= 25 °C|VF (1)|1.0|||V| ||IF= 2.0 A|||1.1|||| |Maximum reverse current|VR= VRRM|TJ= 25 °C|IR|1|||µA| |||TJ= 100 °C||10|||| |Maximum reverse recovery time|IF= 0.5 A, IR=|1.0 A, Irr= 0.25 A|trr|25|||ns| ## **Note** - (1) Pulse test: 300 μs pulse width, 1 % duty cycle |**THERMAL CHARACTERISTICS**(TA= 25 °C unless|otherwise noted)|otherwise noted)|otherwise noted)|otherwise noted)|otherwise noted)| |---|---|---|---|---|---| |**PARAMETER**|**SYMBOL**|**BYG22A**|**BYG22B**|**BYG22D**|**UNIT**| |Maximum thermal resistance, junction to lead, TL= const.|RθJL|25|||°C/W| |Maximum thermal resistance, junction to ambient|RθJA (1)|150|||°C/W| ||RθJA (2)|125|||| ||RθJA (3)|100|||| ## **Notes** - (1) Mounted on epoxy-glass hard tissue - (2) Mounted on epoxy-glass hard tissue, 50 mm2 35 μm Cu - (3) Mounted on Al-oxide-ceramic (Al2O3), 50 mm2 35 μm Cu |**ORDERING INFORMATION**(Example)|**ORDERING INFORMATION**(Example)|**ORDERING INFORMATION**(Example)|**ORDERING INFORMATION**(Example)|**ORDERING INFORMATION**(Example)| |---|---|---|---|---| |**PREFERRED P/N**|**UNIT WEIGHT (g)**|**PREFERRED PACKAGE CODE**|**BASE QUANTITY**|**DELIVERY MODE**| |BYG22D-E3/TR|0.064|TR|1800|7" diameter plastic tape and reel| |BYG22D-E3/TR3|0.064|TR3|7500|13" diameter plastic tape and reel| |BYG22DHE3_A/H(1)|0.064|H|1800|7" diameter plastic tape and reel| |BYG22DHE3_A/I(1)|0.064|I|7500|13" diameter plastic tape and reel| |BYG22D-M3/TR|0.064|TR|1800|7" diameter plastic tape and reel| |BYG22D-M3/TR3|0.064|TR3|7500|13" diameter plastic tape and reel| |BYG22DHM3_A/H(1)|0.064|H|1800|7" diameter plastic tape and reel| |BYG22DHM3_A/I(1)|0.064|I|7500|13" diameter plastic tape and reel| ## **Note** - (1) AEC-Q101 qualified Revision: 21-Feb-2020 Document Number: 88959 **2** For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **BYG22A, BYG22B, BYG22D** **==> picture [59 x 48] intentionally omitted <==** **==> picture [77 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> www.vishay.com<br>**----- End of picture text -----**<br> Vishay General Semiconductor ## **RATINGS AND CHARACTERISTICS CURVES** (TA = 25 °C unless otherwise noted) **==> picture [238 x 160] intentionally omitted <==** **----- Start of picture text -----**<br> Axis Title<br>10 10000<br>1 TJ= 150 ° C<br>1000<br>0.1 TJ= 25 °C<br>100<br>0.01<br>TJ= -40 °C<br>0.001 10<br>0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8<br>Instantaneous Forward Voltage (V)<br>1st line 2nd line<br>2nd line<br>Instantaneous Forward Current (A)<br>**----- End of picture text -----**<br> Fig. 1 - Forward Current vs. Forward Voltage **==> picture [195 x 157] intentionally omitted <==** **----- Start of picture text -----**<br> 50<br>VR = VRRM<br>40<br>30<br>PR - Limit<br>20 at 100 % V R<br>PR - Limit<br>10 at 80 % V R<br>0<br>25 50 75 100 125 150<br>Junction Temperature (°C)<br>Reverse Power Dissipation (mW)<br>**----- End of picture text -----**<br> Fig. 4 - Max. Reverse Power Dissipation vs. Junction Temperature **==> picture [195 x 157] intentionally omitted <==** **----- Start of picture text -----**<br> 2.5<br>VR = VRRM<br>Half Sine-Wave<br>2.0<br>RθJA ≤ 25 K/W<br>1.5<br>1.0 RθJA ≤ 125 K/W<br>0.5 RθJA ≤ 150 K/W<br>0<br>0 20 40 60 80 100 120 140 160<br>Ambient Temperature (°C)<br>Average Forward Current (A)<br>**----- End of picture text -----**<br> Fig. 2 - Max. Average Forward Current vs. Ambient Temperature **==> picture [195 x 157] intentionally omitted <==** **----- Start of picture text -----**<br> 70<br>f = 1 MHz<br>60<br>50<br>40<br>30<br>20<br>10<br>0<br>0.1 1 10 100<br>Reverse Voltage (V)<br>Diode Capacitance (pF)<br>**----- End of picture text -----**<br> Fig. 5 - Diode Capacitance vs. Reverse Voltage **==> picture [460 x 157] intentionally omitted <==** **----- Start of picture text -----**<br> 100 140<br>VR = VRRM TA = 125 °C<br>120<br>TA = 100 °C<br>100<br>TA = 75 °C<br>80<br>10<br>60 TA = 50 °C<br>40 T A = 25 °C<br>20<br>IR = 0.5 A, iR = 0.125 A<br>1 0<br>25 50 75 100 125 150 0 0.2 0.4 0.6 0.8 1.0<br>Junction Temperature (°C) Forward Current (A)<br>Reverse Current (µA)<br>Reverse Recovery Time (ns)<br>**----- End of picture text -----**<br> Fig. 3 - Reverse Current vs. Junction Temperature Fig. 6 - Max. Reverse Recovery Time vs. Forward Current Revision: 21-Feb-2020 Document Number: 88959 **3** For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **BYG22A, BYG22B, BYG22D** **==> picture [59 x 48] intentionally omitted <==** www.vishay.com Vishay General Semiconductor **==> picture [461 x 157] intentionally omitted <==** **----- Start of picture text -----**<br> 60 1000<br>TA = 125 °C<br>50<br>TA = 100 °C 125 K/W DC<br>40 100 tp/T = 0.5<br>TA = 75 °C<br>30 t p /T = 0.2<br>TA = 50 °C tp/T = 0.1<br>20 TA = 25 °C 10 tp/T = 0.05<br>10 tp/T = 0.02 Single Pulse<br>IR = 0.5 A, iR = 0.125 A t p /T = 0.01<br>0 1<br>0 0.2 0.4 0.6 0.8 1.0 10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] 10 [0] 10 [1] 10 [2]<br>Forward Current (A) Pulse Length (s)<br>Reverse Recovery Charge (nC)<br>Thermal Resistance for Pulse Cond. (K/W)<br>**----- End of picture text -----**<br> Fig. 7 - Max. Reverse Recovery Charge vs. Forward Current Fig. 8 - Thermal Response ## **PACKAGE OUTLINE DIMENSIONS** in inches (millimeters) **==> picture [409 x 247] intentionally omitted <==** **----- Start of picture text -----**<br> SMA (DO-214AC)<br>Cathode Band<br>Mounting Pad Layout<br>0.066 (1.68) 0.074 (1.88)<br>MIN. MAX.<br>0.065 (1.65) 0.110 (2.79)<br>0.049 (1.25) 0.100 (2.54)<br>0.177 (4.50)<br>0.157 (3.99)<br>0.060 (1.52)<br>0.012 (0.305)<br>MIN.<br>0.006 (0.152)<br>0.208 (5.28)<br>REF.<br>0.090 (2.29)<br>0.078 (1.98)<br>0.060 (1.52)<br>0.030 (0.76) 0.008 (0.203)<br>0 (0)<br>0.208 (5.28)<br>0.194 (4.93)<br>**----- End of picture text -----**<br> Revision: 21-Feb-2020 Document Number: 88959 **4** For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **Legal Disclaimer Notice** Vishay www.vishay.com **==> picture [59 x 48] intentionally omitted <==** ## **Disclaimer** ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. _**© 2019 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED**_ Revision: 01-Jan-2019 Document Number: 91000 **1**
Updated at June 4, 2026
Vishay is a global leader in the manufacturing of discrete semiconductors and passive electronic components. Renowned for its exceptional quality and engineering expertise, the company produces highly reliable solutions that drive innovation across the industrial, automotive, telecommunications, and consumer electronics markets. From advanced factory automation to vehicle electrification, Vishay components provide the foundational building blocks for modern electronic design. The company's expansive portfolio is heavily focused on efficient power management, signal routing, and energy storage. Within its passive component lineup, Vishay is recognized for its extensive array of high-performance capacitors, including robust aluminium electrolytic, film, and polymer variants, alongside highly efficient power inductors. In the realm of discrete semiconductors, Vishay is a premier manufacturer of single and dual MOSFETs, as well as a vast selection of Schottky, Zener, and fast-recovery rectifier diodes designed for demanding power applications. Furthermore, Vishay delivers industry-leading circuit protection and thermal management solutions. With a broad offering of transient voltage suppressors (TVS diodes) and temperature-sensing NTC thermistors, these components are engineered to safeguard sensitive circuitry against both electrical and thermal overstress. By combining this vital mix of advanced discretes and passives, Vishay enables engineers to develop robust, space-saving, and highly resilient electronic systems.
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