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BUZ900
Power MOSFET, N Channel, 160 V, 8 A, 1.5 ohm, TO-3, Through Hole
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: TT ELECTRONICS / SEMELAB
- Product type: Single MOSFETs
- No. of Pins: 2Pins
- Channel Type: N Channel
- Power Dissipation: 125W
- Transistor Mounting: Through Hole
- Transistor Polarity: N Channel
- Power Dissipation Pd: 125W
- On Resistance Rds(on): 1.5ohm
- Transistor Case Style: TO-3
- Drain Source Voltage Vds: 160V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 8A
- Drain Source On State Resistance: 1.5ohm
- Gate Source Threshold Voltage Max: 1.5V
| Delivery and price | |
|---|---|
| Units per pack | 250 |
| Price | 8.46 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**==> picture [108 x 52] intentionally omitted <==** **----- Start of picture text -----**<br> MAGNA<br>TEC<br>**----- End of picture text -----**<br> **==> picture [67 x 88] intentionally omitted <==** ## **BUZ900 BUZ901** ## **MECHANICAL DATA** Dimensions in mm ## **N–CHANNEL POWER MOSFET** **==> picture [274 x 259] intentionally omitted <==** **----- Start of picture text -----**<br> 25.0 +0.1-0.15 8.7 Max.<br>10.90 ± 0.1 1.50 11.60<br>Typ. ± 0.3<br>1 2<br>R 4.0 ± 0.1 R 4.4 ± 0.2<br>TO–3<br>Pin 1 – Gate Pin 2 – Drain Case – Source<br>39.0 ± 1.1 30.2 ± 0.15 16.9 ± 0.15 Ø 20 Max. Ø 1.0<br>**----- End of picture text -----**<br> ## **POWER MOSFETS FOR AUDIO APPLICATIONS** ## **FEATURES** - **HIGH SPEED SWITCHING** - **N–CHANNEL POWER MOSFET** - **SEMEFAB DESIGNED AND DIFFUSED** - **HIGH VOLTAGE (160V & 200V)** - **HIGH ENERGY RATING** - **ENHANCEMENT MODE** - **INTEGRAL PROTECTION DIODE** - **P–CHANNEL ALSO AVAILABLE AS BUZ905 & BUZ906** ## **ABSOLUTE MAXIMUM RATINGS** |**ABSOLUTE MAXIMUM RATINGS**||| |---|---|---| |(Tcase= 25°C unless otherwise stated)|**BUZ900**|**BUZ901**| |VDSX<br>Drain – Source Voltage<br>VGSS<br>Gate – Source Voltage<br>ID<br>Continuous Drain Current<br>ID(PK)<br>Body Drain Diode<br>PD<br>Total Power Dissipation<br>@ Tcase= 25°C<br>Tstg<br>Storage Temperature Range<br>Tj<br>Maximum Operating Junction Temperature<br>RθJC<br>Thermal Resistance Junction – Case|±14V<br>8A<br>8A<br>125W<br>–55 to 150°C<br>150°C<br>1°C/W<br>160V<br>200V|| **Magnatec.** Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612. Prelim. 10/94 **BUZ900 BUZ901** ## MAGNA TEC **STATIC CHARACTERISTICS** (Tcase = 25°C unless otherwise stated) |**Characteristic**|**Test Conditions**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**| |---|---|---|---|---|---|---| |BVDSX<br>Drain – Source Breakdown Voltage|VGS= –10V<br>ID= 10mA|BUZ900|160|||V| |||BUZ901|200|||| |BVGSS<br>Gate – Source Breakdown Voltage|VDS= 0|IG= ±100µA|±14|||V| |VGS(OFF)<br>Gate – Source Cut–Off Voltage|VDS= 10V|ID= 100mA|0.15||1.5|V| |VDS(SAT)*<br>Drain – Source Saturation Voltage|VGD= 0|ID= 8A|||12|V| |IDSX<br>Drain – Source Cut–Off Current|VGS= –10V|VDS= 160V<br>BUZ900|||10|mA| |||VDS= 200V<br>BUZ901|||10|| |yfs*<br>Forward Transfer Admittance|VDS= 10V|ID= 3A|0.7||2|S| |**DYNAMIC CHARACTERISTICS** (Tcase= 25°C unless otherwise stated)||||||| |**Characteristic**|**Test Conditions**||**Min.**|**Typ.**|**Max.**|**Unit**| |Ciss<br>Input Capacitance|VDS= 10V<br>f = 1MHz|||500||pF| |Coss<br>Output Capacitance||||300||| |Crss<br>Reverse Transfer Capacitance||||10||| |ton<br>Turn–on Time|VDS= 20V<br>ID= 5A|||100||ns| |toff<br>Turn-off Time||||50||| * Pulse Test: Pulse Width = 300µs , Duty Cycle ≤ 2%. **==> picture [211 x 190] intentionally omitted <==** **----- Start of picture text -----**<br> Derating Chart<br>150<br>125<br>100<br>75<br>50<br>25<br>0<br>0 25 50 75 100 125 150<br>T — CASE TEMPERATURE (˚C)C<br>CHANNEL DISSIPATION (W)<br>**----- End of picture text -----**<br> **Magnatec.** Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612. Prelim. 10/94 **BUZ900 BUZ901** ## MAGNA TEC **==> picture [513 x 639] intentionally omitted <==** **----- Start of picture text -----**<br> Typical Output Characteristics Typical Output Characteristics<br>9 9<br>8 6V T = 2C 5˚C 8 T = 7C 5˚C<br>7 7 6V<br>5V<br>6 6 5V<br>5 4V 5<br>4 4 4V<br>3 3V 3<br>2 2V 2 3V<br>1 1 2V<br>0 0<br>0 10 20 30 40 50 60 70 80 90 0 10 20 30 40 50 60 70 80 90<br>V — DRAIN – SOURCE VOLTAGE (V)DS V — DRAIN – SOURCE VOLTAGE (V)DS<br>Forward Bias Safe Operating Area Transconductance<br>10 100<br>V = 20VDS<br>T = 25˚CC<br>1 10<br>T = 25˚CC<br>T = 75˚CC<br>0.1 1<br>BUZ900 BUZ901<br>0.01 0.1<br>1 10 100 1000 0 1 2 3 4 5 6 7 8<br>V — DRAIN – SOURCE VOLTAGE (V)DS I — DRAIN CURRENT (A)D<br>Drain – Source Voltage<br>vs<br>Gate – Source Voltage Typical Transfer Characteristics<br>10 9<br>T = 25C ˚ C 8 V = 10V DS<br>T = 25C ˚ C<br>8<br>7<br>T = 75C ˚ C<br>6<br>6 T = 100C ˚ C<br>I = 6AD 5<br>4<br>4<br>3<br>I = 3AD<br>2<br>2<br>I D = 1A 1<br>0 0<br>0 2 4 6 8 10 12 14 0 1 2 3 4 5 6 7 8<br>V — GATE – SOURCE VOLTAGE (V)GS V — GATE – SOURCE VOLTAGE (V)GS<br>W W<br>DC<br> OPERATION<br>25 25<br>1 1<br>CH= CH=<br>P P<br>I — DRAIN CURRENT (A)D I — DRAIN CURRENT (A)D<br>I — DRAIN CURRENT (A)D<br>FS<br>G — TRANSCONDUCTANCE (S)<br>160V 200V<br>I — DRAIN CURRENT (A)D<br>DS<br>V — DRAIN – SOURCE VOLTAGE (V)<br>**----- End of picture text -----**<br> **Magnatec.** Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612. Prelim. 10/94
Updated at February 9, 2023
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