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BUZ11-NR4941
Power MOSFET, N Channel, 50 V, 30 A, 0.04 ohm, TO-220AB, Through Hole
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- Manufacturer: ONSEMI
- Product type: Single MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:50V; On Resistance Rds(on):0.03ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Pow
- MSL: -
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: -
- Qualification: -
- Power Dissipation: 75W
- Transistor Mounting: Through Hole
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TO-220AB
- Drain Source Voltage Vds: 50V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 30A
- Drain Source On State Resistance: 0.04ohm
- Gate Source Threshold Voltage Max: 3V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.594 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
## **ON Semiconductor** ## **Is Now** **==> picture [390 x 69] intentionally omitted <==** **To learn more about onsemi™, please visit our website at www.onsemi.com** **onsemi** and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as-is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. _**BUZ11**_ ## _**Data Sheet**_ ## _**September 2013 File Number 2253.2**_ ## _**N-Channel Power MOSFET 50V, 30A, 40 mΩ**_ This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from integrated circuits. ## _**Features**_ - 30A, 50V - rDS(ON) = 0.040Ω - SOA is Power Dissipation Limited - Nanosecond Switching Speeds - Linear Transfer Characteristics - High Input Impedance Formerly developmental type TA9771. ## _**Ordering Information**_ **PART NUMBER PACKAGE BRAND** BUZ11-NR4941 TO-220AB BUZ11 ~~ee~~ NOTE: When ordering, use the entire part number. - Majority Carrier Device - Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” ## _**Symbol**_ **==> picture [51 x 64] intentionally omitted <==** **----- Start of picture text -----**<br> D<br>G<br>S<br>**----- End of picture text -----**<br> ## _**Packaging**_ **==> picture [165 x 90] intentionally omitted <==** **----- Start of picture text -----**<br> JEDEC TO-220AB<br>SOURCE<br>DRAIN<br>GATE<br>LA<br>DRAIN (FLANGE) ~£F<<"<br>**----- End of picture text -----**<br> Publication Order Number: BUZ11/D ©2001 Semiconductor Components Industries, LLC. October-2017, Rev. 3 _**BUZ11**_ **Absolute Maximum Ratings** TC = 25[o] C, Unless Otherwise Specified |**Absolute Maximum Ratings**<br>TC= 25oC, Unless Otherwise Specifed||| |---|---|---| ||**BUZ11**|**UNITS**| |Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS|50|V| |Drain to Gate Voltage (RGS= 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR|50|V| |Continuous Drain Current<br>TC= 30oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID|30|A| |Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM|120|A| |Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS|±20|V| |Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD|75|W| |Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .|0.6|W/oC| |Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ,TSTG|-55 to 150|oC| |DIN Humidity Category - DIN 40040 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .|E|| |IEC Climatic Category - DIN IEC 68-1. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .|55/150/56|| |Maximum Temperature for Soldering||| |Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL|300|oC| |Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg|260|oC| _CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied._ NOTE: 1. TJ = 25[o] C to 125[o] C. |Electrical Specifcations|TC= 25oC, Unless Otherwise Specifed|TC= 25oC, Unless Otherwise Specifed|TC= 25oC, Unless Otherwise Specifed||||| |---|---|---|---|---|---|---|---| |**PARAMETER**||**SYMBOL**|**TEST CONDITIONS**|**MIN**|**TYP**|**MAX**|**UNITS**| |Drain to Source Breakdown Voltage||BVDSS|ID= 250µA, VGS= 0V|50|-|-|V| |Gate Threshold Voltage||VGS(TH)|VGS= VDS, ID= 1mA (Figure 9)|2.1|3|4|V| |Zero Gate Voltage Drain Current||IDSS|TJ= 25oC, VDS= 50V, VGS= 0V|-|20|250|µA| ||||TJ= 125oC, VDS= 50V, VGS= 0V|-|100|1000|µA| |Gate to Source Leakage Current||IGSS|VGS= 20V, VDS= 0V|-|10|100|nA| |Drain to Source On Resistance (Note 2)||rDS(ON)|ID= 15A, VGS= 10V (Figure 8)|-|0.03|0.04|Ω| |Forward Transconductance (Note|2)|gfs|VDS= 25V, ID= 15A (Figure 11)|4|8|-|S| |Turn-On Delay Time||td(ON)|VCC= 30V, ID ≈3A, VGS= 10V, RGS= 50Ω,|-|30|45|ns| |Rise Time||tr|RL= 10Ω|-|70|110|ns| |Turn-Off Delay Time||td(OFF)||-|180|230|ns| |Fall Time||tf||-|130|170|ns| |Input Capacitance||CISS|VDS= 25V, VGS= 0V, f = 1MHz (Figure 10)|-|1500|2000|pF| |Output Capacitance||COSS||-|750|1100|pF| |Reverse Transfer Capacitance||CRSS||-|250|400|pF| |Thermal Resistance Junction to Case||RθJC|||≤1.67||oC/W| |Thermal Resistance Junction to Ambient||RθJA|||≤75||oC/W| ## **Source to Drain Diode Specifications** |**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**|**MIN**|**TYP**|**MAX**|**UNITS**| |---|---|---|---|---|---|---| |Continuous Source to Drain Current|ISD|TC= 25oC|-|-|30|A| |Pulsed Source to Drain Current|ISDM|TC= 25oC|-|-|120|A| |Source to Drain Diode Voltage|VSD|TJ= 25oC, ISD= 60A, VGS= 0V|-|1.7|2.6|V| |Reverse Recovery Time|trr|TJ= 25oC, ISD= 30A, dISD/dt = 100A/µs,|-|200|-|ns| |Reverse Recovery Charge|QRR|VR= 30V|-|0.25|-|µC| NOTES: 2. Pulse Test: Pulse width ≤ 300ms, duty cycle ≤ 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3). www.onsemi.com 2 _**BUZ11**_ ## _**Typical Performance Curves**_ Unless Otherwise Specified **==> picture [486 x 562] intentionally omitted <==** **----- Start of picture text -----**<br> 1.2 40<br>VGS > 10V<br>1.0<br>30<br>0.8<br>0.6 20<br>0.4<br>10<br>0.2<br>0 0<br>0 25 50 75 100 125 150 0 50 100 150<br>TA, CASE TEMPERATURE (A, CASE TEMPERATURE (, CASE TEMPERATURE ( [[o]] C) TC, CASE TEMPERATURE ( [o] C)<br>FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs<br>TEMPERATURE CASE TEMPERATURE<br>1 0.5<br>0.2<br>0.1<br>0.05 PDM<br>0.1 0.02<br>0.01<br>t1<br>SINGLE PULSE NOTES: t2<br>DUTY FACTOR: D = t1/t2<br>PEAK TJ = PDM x Z θ JC + TC<br>0.01<br>10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] 10 [0] 10 [1]<br>t, RECTANGULAR PULSE DURATION (s)<br>FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE<br>10 [3] 60<br>OPERATION IN THIS PD = 75W VGS = 20V DUTY CYCLE = 0.5% MAXPULSE DURATION = 80 µ s<br>AREA MAY BE LIMITED 50<br>BY rDS(ON) 10V<br>10 [2] 2.5 µ s 40<br>10 µ s<br>VGS = 8.0V<br>30 VGS = 7.5V<br>100 µ s VGS = 7.0V<br>10 [1] 20 VGS = 6.5V<br>1ms VGS = 6.0V<br>VGS = 5.5V<br>TC = 25 [o] C 10ms 10 VGS = 5.0V<br>TJ = MAX RATED 100ms VGS = 4.5V<br>SINGLE PULSE DC VGS = 4.0V<br>10 [0] 0<br>10 [0] 10 [1] 10 [2] 0 1 2 3 4 5 6<br>VDS, DRAIN TO SOURCE VOLTAGE (V) VDS, DRAIN TO SOURCE VOLTAGE (V)<br>, DRAIN CURRENT (A)<br>ID<br>TRANSIENT THERMAL IMPEDANCE<br>JC,<br>θ<br>Z<br>, DRAIN CURRENT (A)ID , DRAIN CURRENT (A)ID<br>**----- End of picture text -----**<br> **==> picture [227 x 156] intentionally omitted <==** **----- Start of picture text -----**<br> 1.2<br>1.0<br>0.8<br>0.6<br>0.4<br>0.2<br>0<br>0 25 50 75 100 125 150<br>TA, CASE TEMPERATURE (A, CASE TEMPERATURE (, CASE TEMPERATURE ( [[o]] C)<br>POWER DISSIPATION MULTIPLIER<br>**----- End of picture text -----**<br> **FIGURE 4. FORWARD BIAS SAFE OPERATING AREA** **FIGURE 5. OUTPUT CHARACTERISTICS** www.onsemi.com 3 _**BUZ11**_ ## _**Typical Performance Curves**_ Unless Otherwise Specified **(Continued)** **==> picture [224 x 363] intentionally omitted <==** **----- Start of picture text -----**<br> 20<br>PULSE DURATION = 80 µ s<br>DUTY CYCLE = 0.5% MAX<br>VDS = 25V<br>15<br>10<br>5<br>0<br>0 1 2 3 4 5 6 7 8<br>VGS, GATE TO SOURCE VOLTAGE (V)<br>FIGURE 6. TRANSFER CHARACTERISTICS<br>0.08<br>PULSE DURATION = 80 µ s<br>DUTY CYCLE = 0.5% MAX<br>ID = 15A, VGS = 10V<br>0.06<br>0.04<br>0.02<br>0<br>-50 0 50 100 150<br>TJ, JUNCTION TEMPERATURE ( [o] C)<br> DRAIN TO SOURCE CURRENT (A)<br>IDS(ON),<br>) Ω<br>, DRAIN TO SOURCE<br>ON RESISTANCE (<br>rDS(ON)<br>**----- End of picture text -----**<br> **==> picture [224 x 156] intentionally omitted <==** **----- Start of picture text -----**<br> 0.15<br>PULSE DURATION = 80 µ s<br>DUTY CYCLE = 0.5% MAX<br>VGS = 5V<br>5.5V<br>6V<br>0.10<br>6.5V<br>7V<br>7.5V<br>8V<br>9V<br>0.05<br>10V<br>20V<br>0 0 20 40 60<br>ID, DRAIN CURRENT (A)<br>) Ω<br>, ON-STATE RESISTANCE (<br>rDS(ON)<br>**----- End of picture text -----**<br> **FIGURE 7. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT** **==> picture [224 x 156] intentionally omitted <==** **----- Start of picture text -----**<br> 4<br>VDS = VGS<br>ID = 1mA<br>3<br>2<br>1<br>0<br>-50 0 50 100 150<br>TJ, JUNCTION TEMPERATURE ( [o] C)<br>, GATE THRESHOLD VOLTAGE (V)<br>GS(TH)<br>V<br>**----- End of picture text -----**<br> ## **FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE** **FIGURE 9. GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE** **==> picture [223 x 156] intentionally omitted <==** **----- Start of picture text -----**<br> 10 [1]<br>10 [0] CISS<br>COSS<br>CRSS<br>10 [-1]<br>VGS = 0V, f = 1MHz<br>CISS = CGS + CGD<br>CRSS = CGD<br>COSS ≈ CDS + CGD<br>10 [-2]<br>0 10 20 30 40<br>VDS, DRAIN TO SOURCE VOLTAGE (V)<br>C, CAPACITANCE (nF)<br>**----- End of picture text -----**<br> **==> picture [224 x 156] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>PULSE DURATION = 80 µ s<br>DUTY CYCLE = 0.5% MAX<br>VDS = 25V<br>8<br>TJ = 25 [o] C<br>6<br>4<br>2<br>0<br>0 5 10 15 20<br>ID, DRAIN CURRENT (A)<br>, TRANSCONDUCTANCE (S)<br>fs<br>g<br>**----- End of picture text -----**<br> **FIGURE 10. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE** **FIGURE 11. TRANSCONDUCTANCE vs DRAIN CURRENT** www.onsemi.com 4 _**BUZ11**_ ## _**Typical Performance Curves**_ Unless Otherwise Specified **(Continued)** **==> picture [224 x 157] intentionally omitted <==** **----- Start of picture text -----**<br> 10 [3]<br>PULSE DURATION = 80 µ s<br>DUTY CYCLE = 0.5% MAX<br>TJ = 25 [o] C<br>10 [2]<br>TJ = 150 [o] C<br>10 [1]<br>10 [0]<br>10 [-1]<br>0 0.5 1.0 1.5 2.0 2.5 3.0<br>VSD, SOURCE TO DRAIN VOLTAGE (V)<br>, SOURCE TO DRAIN CURRENT (A)<br>ISD<br>**----- End of picture text -----**<br> **==> picture [224 x 158] intentionally omitted <==** **----- Start of picture text -----**<br> 15<br>ID = 45A<br>VDS = 10V<br>10<br>VDS = 40V<br>5<br>0<br>0 10 20 30 40 50<br>Qg, GATE CHARGE (nC)<br>, GATE TO SOURCE VOLTAGE (V)<br>GS<br>V<br>**----- End of picture text -----**<br> **FIGURE 12. SOURCE TO DRAIN DIODE VOLTAGE** **FIGURE 13. GATE TO SOURCE VOLTAGE vs GATE CHARGE** ## _**Test Circuits and Waveforms**_ **==> picture [209 x 114] intentionally omitted <==** **----- Start of picture text -----**<br> RL<br>+<br>RG - VDD<br>DUT<br>VGS<br>**----- End of picture text -----**<br> **==> picture [208 x 142] intentionally omitted <==** **----- Start of picture text -----**<br> tON tOFF<br>td(ON) td(OFF)<br>tr tf<br>VDS<br>90% 90%<br>10% 10%<br>0<br>90%<br>VGS 50% 50%<br>PULSE WIDTH<br>10%<br>0<br>**----- End of picture text -----**<br> **FIGURE 14. SWITCHING TIME TEST CIRCUIT** **==> picture [221 x 175] intentionally omitted <==** **----- Start of picture text -----**<br> VDS<br>CURRENT (ISOLATED<br>REGULATOR SUPPLY)<br>SAME TYPE<br>12V AS DUT<br>BATTERY 0.2 µ F 50k Ω<br>0.3 µ F<br>D<br>G DUT<br>Ig(REF) S<br>0<br>VDS<br>IG CURRENT ID CURRENT<br>SAMPLING SAMPLING<br>RESISTOR RESISTOR<br>**----- End of picture text -----**<br> **FIGURE 16. GATE CHARGE TEST CIRCUIT** **FIGURE 15. RESISTIVE SWITCHING WAVEFORMS** **==> picture [221 x 149] intentionally omitted <==** **----- Start of picture text -----**<br> VDD<br>Q g(TOT) VGS<br>Qgd<br>Qgs<br>VDS<br>0<br>Ig(REF)<br>0<br>**----- End of picture text -----**<br> **FIGURE 17. GATE CHARGE WAVEFORMS** www.onsemi.com 5 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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Updated at April 29, 2026
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