BUL89
Bipolar (BJT) Single Transistor, NPN, 400 V, 12 A, 110 W, TO-220, Through Hole
- Manufacturer: STMICROELECTRONICS
- Product type: Single Bipolar Junction Transistors - BJT
- No. of Pins: 3Pins
- Power Dissipation: 110W
- DC Current Gain hFE: 10hFE
- Transistor Mounting: Through Hole
- Transistor Polarity: NPN
- Transistor Case Style: TO-220
- DC Current Gain hFE Min: 10hFE
- Operating Temperature Max: 150°C
- Continuous Collector Current: 12A
- Collector Emitter Voltage Max: 400V
| Delivery and price | |
|---|---|
| Units per pack | 1 |
| Price | 2.67 € |
| Current stock | 10+ |
| Lead time | 30 days |
**==> picture [7 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> ®<br>**----- End of picture text -----**<br> ## **BUL89** ## HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR - I HIGH VOLTAGE CAPABILITY - I MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION - I LOW BASE-DRIVE REQUIREMENTS - I VERY HIGH SWITCHING SPEED - I FULLY CHARACTERIZED AT 125[o] C ## **APPLICATIONS** - I ELECTRONIC TRANSFORMER FOR HALOGEN LAMPS **==> picture [88 x 88] intentionally omitted <==** **----- Start of picture text -----**<br> 3<br>2<br>1<br>**----- End of picture text -----**<br> - I SWITCH MODE POWER SUPPLIES ## **DESCRIPTION** **TO-220** The BUL89 is manufactured using high voltage Multiepitaxial Mesa technology for cost-effective high performance. It uses a Hollow Emitter structure to enhance switching speeds. The BUL series is designed for use in lighting applications and low cost switch-mode power supplies. ## **INTERNAL SCHEMATIC DIAGRAM** **==> picture [73 x 93] intentionally omitted <==** ## **ABSOLUTE MAXIMUM RATINGS** |**Symbol**|**Parameter**|**Value**|**Unit**| |---|---|---|---| |VCES|Collector-Emitter Voltage(VBE= 0)|850|V| |VCEO|Collector-Emitter Voltage(IB= 0)|400|V| |VEBO|Emitter-Base Voltage(IC= 0)|9|V| |IC|Collector Current|12|A| |ICM|Collector Peak Current(tp< 5 ms)|25|A| |IB|Base Current|6|A| |IBM|Base Peak Current(tp< 5 ms)|12|A| |Ptot|Total Dissipation at Tc= 25oC|110|W| |Tstg|Storage Temperature|-65 to 150|oC| |Tj|Max. OperatingJunction Temperature|150|oC| 1/6 September 2001 **BUL89** ## **THERMAL DATA** Rthj-case Thermal Resistance Junction-Case Max 1.14 oC/W ## **ELECTRICAL CHARACTERISTICS** (Tcase = 25[o] C unless otherwise specified) |**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**| |---|---|---|---|---|---|---| |ICES|Collector Cut-off<br>Current (VBE= 0)<br><br>|VCE= 850 V<br>VCE= 850 V Tj= 125oC|||100<br>500|µA<br>µA| |ICEO|Collector Cut-off<br>Current(IB= 0)<br>|VCE= 400 V|||100|µA| |VCEO(sus)∗|Collector-Emitter<br>Sustaining Voltage<br>(IB= 0)<br>I|C= 10 mA L = 25 mH|400|||V| |VEBO|Emitter-Base Voltage<br>(IC= 0)<br>I|E= 10 mA|9|||V| |VCE(sat)∗|Collector-Emitter<br>Saturation Voltage<br>I<br>I<br>I|C= 5 A IB= 1 A<br>C= 8 A IB= 1.6 A<br>C= 12 A IB= 2.4 A|||1<br>1.5<br>5|V<br>V<br>V| |VBE(sat)∗|Base-Emitter<br>Saturation Voltage<br>I<br>I|C= 5 A IB= 1 A<br>C= 8 A IB= 1.6 A|||1.3<br>1.6|V<br>V| |hFE∗|DC Current Gain<br>I<br>I|C= 5 A VCE= 5 V<br>C= 10 mA VCE= 5 V|10<br>10||40|| |ts<br>tf|INDUCTIVE LOAD<br>Storage Time<br>Fall Time<br>I<br><br><br>(|C= 8 A IB1= 1.6 A<br>VBE(off)= -5 V RBB= 0Ω<br>VCL= 350 V L = 200µH<br>see figure 1)||1.5<br>55|2.3<br>110|µs<br>ns| |ts<br>tf|INDUCTIVE LOAD<br>Storage Time<br>Fall Time<br>I<br><br><br>|C= 8 A IB1= 1.6 A<br>VBE(off)= -5 V RBB= 0Ω<br>VCL= 350 V L = 200µH<br>Tj= 100oC(see figure 1)||1.9<br>80||µs<br>ns| ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % ## Safe Operating Area ## Derating Curve **==> picture [180 x 174] intentionally omitted <==** **==> picture [177 x 174] intentionally omitted <==** 2/6 **BUL89** DC Current Gain **==> picture [174 x 174] intentionally omitted <==** Collector Emitter Saturation Voltage **==> picture [182 x 174] intentionally omitted <==** Inductive Load Fall Time **==> picture [188 x 174] intentionally omitted <==** ## DC Current Gain **==> picture [174 x 174] intentionally omitted <==** Base Emitter Saturation Voltage **==> picture [183 x 174] intentionally omitted <==** Inductive Load Storage Time **==> picture [188 x 174] intentionally omitted <==** 3/6 **BUL89** ## Reverse Biased SOA **==> picture [177 x 174] intentionally omitted <==** **Figure 1** : Inductive Load Switching Test Circuit **==> picture [58 x 34] intentionally omitted <==** **==> picture [67 x 82] intentionally omitted <==** **==> picture [109 x 30] intentionally omitted <==** **----- Start of picture text -----**<br> 1) Fast electronic switch<br>2) Non-inductive Resistor<br>3) Fast recovery rectifier<br>**----- End of picture text -----**<br> **==> picture [138 x 112] intentionally omitted <==** 4/6 **BUL89** ## **TO-220 MECHANICAL DATA** |**DIM.**|**mm**|**mm**|**mm**|**inch**|**inch**|**inch**| |---|---|---|---|---|---|---| ||**MIN.**|**TYP.**|**MAX.**|**MIN.**|**TYP.**|**MAX.**| |A|4.40||4.60|0.173||0.181| |C|1.23||1.32|0.048||0.052| |D|2.40||2.72|0.094||0.107| |E|0.49||0.70|0.019||0.027| |F|0.61||0.88|0.024||0.034| |F1|1.14||1.70|0.044||0.067| |F2|1.14||1.70|0.044||0.067| |G|4.95||5.15|0.194||0.202| |G1|2.40||2.70|0.094||0.106| |H2|10.00||10.40|0.394||0.409| |L2||16.40|||0.645|| |L4|13.00||14.00|0.511||0.551| |L5|2.65||2.95|0.104||0.116| |L6|15.25||15.75|0.600||0.620| |L7|6.20||6.60|0.244||0.260| |L9|3.50||3.93|0.137||0.154| |M||2.60|||0.102|| |DIA.|3.75||3.85|0.147||0.151| **==> picture [333 x 272] intentionally omitted <==** P011CI 5/6 **BUL89** Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. 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Updated at February 9, 2023
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