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BUL45D2G
Bipolar (BJT) Single Transistor, NPN, 400 V, 5 A, 75 W, TO-220, Through Hole
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- Manufacturer: ONSEMI
- Product type: Single Bipolar Junction Transistors - BJT
- Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:400V; Transition Frequency ft:13MHz; Power Dissipation Pd:75W; DC Collector Current:5A; DC Current Gain hFE:10hFE; Transistor
- MSL: -
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: -
- Qualification: -
- Power Dissipation: 75W
- Transistor Mounting: Through Hole
- Transistor Polarity: NPN
- Transition Frequency: 13MHz
- Transistor Case Style: TO-220
- DC Current Gain hFE Min: 10hFE
- Operating Temperature Max: 150°C
- Continuous Collector Current: 5A
- Collector Emitter Voltage Max: 400V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 1.37 € |
| Current stock | 500+ |
| Lead time | 7 days |
Datasheet
## BUL45D2G ## High Speed, High Gain Bipolar NPN Power Transistor ## **with Integrated Collector−Emitter Diode and Built−in Efficient Antisaturation Network** The BUL45D2G is state−of−art High Speed High gain BiPolar transistor (H2BIP). High dynamic characteristics and lot−to−lot minimum spread (±150 ns on storage time) make it ideally suitable for light ballast applications. Therefore, there is no need to guarantee an hFE window. It’s characteristics make it also suitable for PFC application. ## **Features** - Low Base Drive Requirement - High Peak DC Current Gain - Extremely Low Storage Time Min/Max Guarantees Due to the H2BIP Structure which Minimizes the Spread - Integrated Collector−Emitter Free Wheeling Diode **www.onsemi.com** ## **POWER TRANSISTOR 5.0 AMPERES, 700 VOLTS, 75 WATTS** **==> picture [88 x 107] intentionally omitted <==** **----- Start of picture text -----**<br> COLLECTOR<br>2, 4<br>1<br>BASE<br>3<br>EMITTER<br>**----- End of picture text -----**<br> - Fully Characterized and Guaranteed Dynamic VCE(sat) - “6 Sigma” Process Providing Tight and Reproductible Parameter Spreads **==> picture [493 x 354] intentionally omitted <==** **----- Start of picture text -----**<br> 4<br>Parameter Spreads<br>• These Devices are Pb−Free and are RoHS Compliant*<br>TO−220<br>MAXIMUM RATINGS CASE 221A<br>STYLE 1<br>Rating Symbol Value Unit<br>Collector−Emitter Sustaining Voltage VCEO 400 Vdc<br>1<br>ee) Collector−Base Breakdown Voltage VCBO 700 Vdc 2 3<br>Collector−Emitter Breakdown Voltage VCES 700 Vdc<br>MARKING DIAGRAM<br>Emitter−Base Voltage VEBO 12 Vdc<br>Collector Current − Continuous IC 5 Adc<br>Collector Current − Peak (Note 1) ICM 10 Adc<br>Base Current − Continuous IB 2 Adc<br>BUL45D2G<br>Base Current − Peak (Note 1) IBM 4 Adc<br>AY WW<br>Total Device Dissipation PD<br>@ TC = 25 C 75 W<br>Derate above 25 ° C 0.6 W/ C<br>cs Operating and Storage Temperature TJ, Tstg −65 to +150 C<br>A = Assembly Location<br>Stresses exceeding those listed in the Maximum Ratings table may damage the<br>device. If any of these limits are exceeded, device functionality should not be Y = Year<br>assumed, damage may occur and reliability may be affected. WW = Work Week<br>1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%. G = Pb−Free Package<br>ORDERING INFORMATION<br>Device Package Shipping<br>*For additional information on our Pb−Free strategy and soldering details, please BUL45D2G TO−220 50 Units / Rail<br>download the ON Semiconductor Soldering and Mounting Techniques<br>(Pb−Free)<br>Reference Manual, SOLDERRM/D. Pr<br>**----- End of picture text -----**<br> - *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Publication Order Number: **1** © Semiconductor Components Industries, LLC, 2014 **November, 2014 − Rev. 8** **BUL45D2/D** **BUL45D2G** ## **THERMAL CHARACTERISTICS** |**THERMAL CHARACTERISTICS**|**THERMAL CHARACTERISTICS**||||| |---|---|---|---|---|---| |**Characteristics**|||**Symbol**|**Max**|**Unit**| |Thermal Resistance, Junction−to−Case|||R�JC|1.65|�C/W| |Thermal Resistance, Junction−to−Ambient|||R�JA|62.5|�C/W| |Maximum Lead Temperature for Soldering Purposes 1/8″from Case for 5 Seconds|||TL|260|�C| |**ELECTRICAL CHARACTERISTICS** (TC= 25°C unless otherwise noted)|||||| |**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**| |**OFF CHARACTERISTICS**|||||| |Collector−Emitter Sustaining Voltage<br>(IC= 100 mA, L = 25 mH)|VCEO(sus)|400|450|−|Vdc| |Collector−Base Breakdown Voltage<br>(ICBO= 1 mA)|VCBO|700|910|−|Vdc| |Emitter−Base Breakdown Voltage<br>(IEBO= 1 mA)|VEBO|12|14.1|−|Vdc| |Collector Cutoff Current<br>(VCE= Rated VCEO, IB= 0)|ICEO|−|−|100|�Adc| |Collector Cutoff Current<br>(VCE= Rated VCES, VEB= 0)<br>@ TC= 25°C<br>@ TC= 125°C<br>(VCE= 500 V, VEB= 0)<br>@ TC= 125°C|ICES|−<br>−<br>−|−<br>−<br>−|100<br>500<br>100|�Adc| |Emitter−Cutoff Current<br>(VEB= 10 Vdc, IC= 0)|IEBO|−|−|100|�Adc| |**ON CHARACTERISTICS**|||||| |Base−Emitter Saturation Voltage<br>(IC= 0.8 Adc, IB= 80 mAdc)<br>@ TC= 25°C<br>@ TC= 125°C<br>(IC= 2 Adc, IB= 0.4 Adc)<br>@ TC= 25°C<br>@ TC= 125°C|VBE(sat)|−<br>−<br>−<br>−|0.8<br>0.7<br>0.89<br>0.79|1<br>0.9<br>1<br>0.9|Vdc| |Collector−Emitter Saturation Voltage<br>(IC= 0.8 Adc, IB= 80 mAdc)<br>@ TC= 25°C<br>@ TC= 125°C<br>(IC= 2 Adc, IB= 0.4 Adc)<br>@ TC= 25°C<br>@ TC= 125°C<br>(IC= 0.8 Adc, IB= 40 mAdc)<br>@ TC= 25°C<br>@ TC= 125°C|VCE(sat)|−<br>−<br>−<br>−<br>−<br>−|0.28<br>0.32<br>0.32<br>0.38<br>0.46<br>0.62|0.4<br>0.5<br>0.5<br>0.6<br>0.75<br>1|Vdc| |DC Current Gain<br>(IC= 0.8 Adc, VCE= 1 Vdc)<br>@ TC= 25°C<br>@ TC= 125°C<br>(IC= 2 Adc, VCE= 1 Vdc)<br>@ TC= 25°C<br>@ TC= 125°C|hFE|22<br>20<br>10<br>7|34<br>29<br>14<br>9.5|−<br>−<br>−<br>−|−| |**DIODE CHARACTERISTICS**|||||| |Forward Diode Voltage<br>(IEC= 1 Adc)<br>@ TC= 25°C<br>@ TC= 125°C<br>(IEC= 2 Adc)<br>@ TC= 25°C<br>@ TC= 125°C<br>(IEC= 0.4 Adc)<br>@ TC= 25°C<br>@ TC= 125°C|VEC|−<br>−<br>−<br>−<br>−<br>−|1.04<br>0.7<br>1.2<br>−<br>0.85<br>0.62|1.5<br>−<br>1.6<br>−<br>1.2<br>−|V| **www.onsemi.com** **2** **BUL45D2G** ## **ELECTRICAL CHARACTERISTICS** (continued) (TC = 25 ° C unless otherwise noted) |**Characteristic**|**Characteristic**|||**Symbol**|**Min**|**Typ**|**Max**|**Unit**| |---|---|---|---|---|---|---|---|---| |**DIODE CHARACTERISTICS**||||||||| |Forward Recovery Time (see Figure 27)<br>(IF= 1 Adc, di/dt = 10 A/�s)<br>@ TC= 25°C<br>(IF= 2 Adc, di/dt = 10 A/�s)<br>@ TC= 25°C<br>(IF= 0.4 Adc, di/dt = 10 A/�s)<br>@ TC= 25°C||||Tfr|−<br>−<br>−|330<br>360<br>320|−<br>−<br>−|ns| |**DYNAMIC CHARACTERISTICS**||||||||| |Current Gain Bandwidth<br>(IC= 0.5 Adc, VCE= 10 Vdc, f = 1 MHz)||||fT|−|13|−|MHz| |Output Capacitance<br>(VCB= 10 Vdc, IE= 0,|f = 1 MHz)|||Cob|−|50|75|pF| |Input Capacitance<br>(VEB= 8 Vdc)||||Cib|−|340|500|pF| |**DYNAMIC SATURATION**|**VOLTAGE**|||||||| |Dynamic Saturation<br>Voltage:<br>Determined 1�s and<br>3�s respectively after<br>rising IB1reaches<br>90% of final IB1|IC= 1 A<br>IB1= 100 mA<br>VCC= 300 V|@ 1�s|@ TC= 25°C<br>@ TC= 125°C|VCE(dsat)|−<br>−|3.7<br>9.4|−<br>−|V| |||@ 3�s|@ TC= 25°C<br>@ TC= 125°C||−<br>−|0.35<br>2.7|−<br>−|V| ||IC= 2 A<br>IB1= 0.8 A<br>VCC= 300 V|@ 1�s|@ TC= 25°C<br>@ TC= 125°C||−<br>−|3.9<br>12|−<br>−|V| |||@ 3�s|@ TC= 25°C<br>@ TC= 125°C||−<br>−|0.4<br>1.5|−<br>−|V| |**SWITCHING CHARACTERISTICS: Resistive Load**(D.C.≤10%, Pulse Width = 20�s)||||||||| |Turn−on Time|IC= 2 Adc, IB1= 0.4 Adc<br>IB2= 1 Adc<br>VCC= 300 Vdc||@ TC= 25°C<br>@ TC= 125°C|ton|−<br>−|90<br>105|150<br>−|ns| |Turn−off Time|||@ TC= 25°C<br>@ TC= 125°C|toff|−<br>−|1.15<br>1.5|1.3<br>−|�s| |Turn−on Time|IC= 2 Adc, IB1= 0.4 Adc<br>IB2= 0.4 Adc<br>VCC= 300 Vdc||@ TC= 25°C<br>@ TC= 125°C|ton|−<br>−|90<br>110|150<br>−|ns| |Turn−off Time|||@ TC= 25°C<br>@ TC= 125°C|toff|2.1<br>−|−<br>3.1|2.4<br>−|�s| |**SWITCHING CHARACTERISTICS: Inductive Load**(Vclamp= 300 V, VCC||||= 15 V, L = 200�H)||||| |Fall Time|IC= 1 Adc<br>IB1= 100 mAdc<br>IB2= 500 mAdc||@ TC= 25°C<br>@ TC= 125°C|tf|−<br>−|90<br>93|150<br>−|ns| |Storage Time|||@ TC= 25°C<br>@ TC= 125°C|ts|−<br>−|0.72<br>1.05|0.9<br>−|�s| |Crossover Time|||@ TC= 25°C<br>@ TC= 125°C|tc|−<br>−|95<br>95|150<br>−|ns| |Fall Time|IC= 2 Adc<br>IB1= 0.4 Adc<br>IB2= 0.4 Adc||@ TC= 25°C<br>@ TC= 125°C|tf|−<br>−|80<br>105|150<br>−|ns| |Storage Time|||@ TC= 25°C<br>@ TC= 125°C|ts|1.95<br>−|−<br>2.9|2.25<br>−|�s| |Crossover Time|||@ TC= 25°C<br>@ TC= 125°C|tc|−<br>−|225<br>450|300<br>−|ns| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. **www.onsemi.com** **3** **BUL45D2G** ## **TYPICAL STATIC CHARACTERISTICS** **==> picture [485 x 615] intentionally omitted <==** **----- Start of picture text -----**<br> 100 100<br>VCE = 1 V VCE = 5 V<br>80 TJ = 125°C 80 TJ = 125°C<br>60 TJ = 25°C 60 TJ = 25°C<br>40 TJ = -�20°C 40 TJ = -�20°C<br>20 20<br>0 0<br>0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10<br>IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)<br>Figure 1. DC Current Gain @ 1 Volt Figure 2. DC Current Gain @ 5 Volt<br>4 10<br>TJ = 25°C<br>I C /I B = 5<br>TJ = 25°C<br>3<br>2 1<br>TJ = 125°C<br>5 A<br>1 3 A<br>1 A 2 A 4 A TJ = -�20°C<br>IC = 500 mA<br>0 0.1<br>0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10<br>IB, BASE CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)<br>Figure 3. Collector Saturation Region Figure 4. Collector−Emitter Saturation Voltage<br>10 10<br>I C /I B = 10 I C /I B = 20<br>1 1<br>TJ = -�20 ° C T J = -�20°C TJ = 25 ° C T J = 125°C<br>TJ = 125°C<br>T J = 25°C<br>0.1 0.1<br>0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10<br>IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)<br>hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN<br>VCE, VOLTAGE (VOLTS) VCE, VOLTAGE (VOLTS)<br>VCE, VOLTAGE (VOLTS) VCE, VOLTAGE (VOLTS)<br>**----- End of picture text -----**<br> **Figure 5. Collector−Emitter Saturation Voltage** **Figure 6. Collector−Emitter Saturation Voltage** **www.onsemi.com** **4** **BUL45D2G** ## **TYPICAL STATIC CHARACTERISTICS** **==> picture [237 x 171] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>I C /I B = 5<br>TJ = 25 ° C<br>1 TJ = -�20°C<br>TJ = 125 ° C<br>0.1<br>0.001 0.01 0.1 1 10<br>IC, COLLECTOR CURRENT (AMPS)<br>VBE, VOLTAGE (VOLTS)<br>**----- End of picture text -----**<br> **Figure 7. Base−Emitter Saturation Region** **==> picture [237 x 171] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>I C /I B = 10<br>1 TJ = -�20°C<br>TJ = 125 ° C<br>TJ = 25°C<br>0.1<br>0.001 0.01 0.1 1 10<br>IC, COLLECTOR CURRENT (AMPS)<br>VBE, VOLTAGE (VOLTS)<br>**----- End of picture text -----**<br> **Figure 8. Base−Emitter Saturation Region** **==> picture [236 x 171] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>I C /I B = 20<br>1 TJ = -�20°C<br>T J = 125°C<br>TJ = 25°C<br>0.1<br>0.001 0.01 0.1 1 10<br>IC, COLLECTOR CURRENT (AMPS)<br>VBE, VOLTAGE (VOLTS)<br>**----- End of picture text -----**<br> **Figure 9. Base−Emitter Saturation Region** **==> picture [237 x 170] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>25°C<br>1<br>125°C<br>0.1<br>0.01 0.1 1 10<br>REVERSE EMITTER-COLLECTOR CURRENT (AMPS)<br>FORWARD DIODE VOLTAGE (VOLTS)<br>**----- End of picture text -----**<br> **Figure 10. Forward Diode Voltage** **==> picture [475 x 171] intentionally omitted <==** **----- Start of picture text -----**<br> 1000 1000<br>C ib (pF) TJ = 25 ° C TJ = 25°C<br>f(test) = 1 MHz 900 BVCER @ 10 mA<br>100 800<br>Cob (pF)<br>700<br>10 600<br>BVCER(sus) @ 200 mA<br>500<br>1 400<br>1 10 100 10 100 1000<br>VR, REVERSE VOLTAGE (VOLTS) RBE (�)<br>BVCER (VOLTS)<br>**----- End of picture text -----**<br> **Figure 11. Capacitance** **Figure 12. BVCER = f(ICER)** **www.onsemi.com** **5** **BUL45D2G** ## **TYPICAL SWITCHING CHARACTERISTICS** **==> picture [237 x 170] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>IBon = IBoff TJ = 125°C<br>VCC = 300 V TJ = 25°C<br>800 PW = 20 �s<br>600<br>IC/IB = 10<br>400<br>IC/IB = 5<br>200<br>0<br>0.5 1 1.5 2 2.5 3 3.5 4<br>IC, COLLECTOR CURRENT (AMPS)<br>t, TIME (ns)<br>**----- End of picture text -----**<br> **Figure 13. Resistive Switch Time, ton** **==> picture [236 x 171] intentionally omitted <==** **----- Start of picture text -----**<br> 5<br>IBon = IBoff<br>4 IC/IB = 10 VCC = 300 V<br>PW = 20 �s<br>3<br>2<br>1 TJ = 125°C IC/IB = 5<br>TJ = 25°C<br>0<br>0.5 1 1.5 2 2.5 3 3.5 4<br>IC, COLLECTOR CURRENT (AMPS)<br>μ<br>t, TIME (��s)<br>**----- End of picture text -----**<br> **Figure 14. Resistive Switch Time, toff** **==> picture [235 x 392] intentionally omitted <==** **----- Start of picture text -----**<br> 4<br>IC/IB = 5 IVBonCC = I = 15 VBoff<br>3 VZ = 300 V<br>LC = 200 �H<br>2<br>1<br>TJ = 125°C<br>TJ = 25°C<br>0<br>0 1 2 3 4<br>IC, COLLECTOR CURRENT (AMPS)<br>Figure 15. Inductive Storage Time,<br>tsi @ IC/IB = 5<br>600<br>IBon = IBoff TJ = 125°C<br>500 VCC = 15 V TJ = 25°C<br>VZ = 300 V<br>LC = 200 �H tc<br>400<br>300<br>200<br>100<br>tfi<br>0<br>0 1 2 3 4<br>IC, COLLECTOR CURRENT (AMPS)<br>μ<br>t, TIME (��s)<br>t, TIME (ns)<br>**----- End of picture text -----**<br> **==> picture [235 x 396] intentionally omitted <==** **----- Start of picture text -----**<br> 5<br>I Bon = I Boff<br>VCC = 15 V<br>4 V Z = 300 V<br>LC = 200 �H<br>3<br>2<br>1 T J = 125°C<br>TJ = 25°C<br>0<br>0 1 2 3 4<br>IC, COLLECTOR CURRENT (AMPS)<br>Figure 16. Inductive Storage Time,<br>tsi @ IC/IB = 10<br>400<br>IBoff = IBon<br>VCC = 15 V<br>300 VZ = 300 V<br>LC = 200 �H<br>200<br>100<br>TJ = 125°C<br>TJ = 25°C<br>0<br>0 1 2 3<br>IC, COLLECTOR CURRENT (AMPS) 4<br>μ<br>t, TIME (��s)<br>t, TIME (ns)<br>**----- End of picture text -----**<br> **Figure 17. Inductive Switching, tc & tfi @ IC/IB = 5** **Figure 18. Inductive Switching, tfi @ IC/IB = 10** **www.onsemi.com** **6** **BUL45D2G** ## **TYPICAL SWITCHING CHARACTERISTICS** **==> picture [483 x 170] intentionally omitted <==** **----- Start of picture text -----**<br> 1500 5<br>1000 LIVVBoffCCCZ = 200 = 300 V = I = 15 VBon�H TTJJ = 125 = 25°C°C 4 T T JJ = 125 = 25°C °C IC = 1 A VLIVBonC CC Z = 200 = 300 V = I= 15 VBoff�H<br>500 3<br>IC = 2 A<br>0 2<br>0 1 2 3 4 0 5 10 15 20<br>IC, COLLECTOR CURRENT (AMPS) hFE, FORCED GAIN<br>s)<br>μ<br>t, TIME (ns)<br>, STORAGE TIME (<br>tsi<br>**----- End of picture text -----**<br> **Figure 19. Inductive Switching, tc @ IC/IB = 10** **Figure 20. Inductive Storage Time** **==> picture [482 x 394] intentionally omitted <==** **----- Start of picture text -----**<br> 450 1400<br>IVBoffCC = I = 15 VBon TT J J = 125 = 25°C°C 1200 IVBonCC = I = 15 VBoff TTJJ = 125 = 25°C°C<br>350 LVCZ = 200 = 300 V�H I C = 1 A 1000 VLCZ = 200 = 300 V�H<br>800 IC = 2 A<br>250<br>600<br>400<br>150<br>I C = 2 A 200<br>IC = 1 A<br>50 0<br>2 4 6 8 10 12 14 16 18 20 2 4 6 8 10 12 14 16 18 20<br>hFE, FORCED GAIN hFE, FORCED GAIN<br>Figure 21. Inductive Fall Time Figure 22. Inductive Crossover Time<br>3000 360<br>IB1 = IB2 IBon = IBoff<br>VCC = 15 V dI/dt = 10 A/�s<br>VZ = 300 V TC = 25°C<br>LC = 200 �H<br>2000 340<br>IB = 50 mA<br>IB = 100 mA<br>1000 320<br>IB = 200 mA<br>IB = 500 mA<br>IB = 1 A<br>0 300<br>0.5 1 1.5 2 2.5 3 3.5 4 0 0.5 1 1.5 2<br>IC, COLLECTOR CURRENT (AMPS) IF, FORWARD CURRENT (AMP)<br>tfi, FALL TIME (ns)<br>tc, CROSSOVER TIME (ns)<br>t, TIME (ns)<br>t fr, FORWARD RECOVERY TIME (ns)<br>**----- End of picture text -----**<br> **Figure 23. Inductive Storage Time, tsi** **Figure 24. Forward Recovery Time tfr** **www.onsemi.com** **7** **BUL45D2G** ## **TYPICAL SWITCHING CHARACTERISTICS** **==> picture [218 x 387] intentionally omitted <==** **----- Start of picture text -----**<br> VCE<br>dyn 1 �s<br>dyn 3 �s<br>0 V<br>90% IB<br>1 �s<br>IB<br>3 �s<br>TIME<br>Figure 25. Dynamic Saturation<br>Voltage Measurements<br>10<br>9 IC 90% IC<br>8 tfi<br>tsi<br>7<br>6<br>10% IC<br>5 Vclamp 10% Vclamp<br>tc<br>4<br>3 IB 90% IB1<br>2<br>1<br>0<br>0 1 2 3 4 5 6 7 8<br>TIME<br>**----- End of picture text -----**<br> **Figure 26. Inductive Switching Measurements** **==> picture [220 x 154] intentionally omitted <==** **----- Start of picture text -----**<br> VFRM VFR (1.1 VF unless<br>otherwise specified)<br>VF VF<br>tfr<br>0.1 VF<br>0<br>IF<br>10% IF<br>0 2 4 6 8 10<br>**----- End of picture text -----**<br> **Figure 27. tfr Measurements** **www.onsemi.com** **8** **BUL45D2G** ## **TYPICAL SWITCHING CHARACTERISTICS** ## **Table 1. Inductive Load Switching Drive Circuit** **==> picture [485 x 462] intentionally omitted <==** **----- Start of picture text -----**<br> +15 V<br>IC PEAK<br>1 �F 150 � 100 � MTP8P10 100 �F<br>3 W 3 W VCE PEAK<br>MTP8P10 VCE<br>MPF930 RB1<br>MUR105 IB1<br>+10 V MPF930 Iout IB<br>A<br>IB2<br>50 RB2<br>� MJE210<br>COMMON 150 � MTP12N10 V(BR)CEO(sus) Inductive Switching RBSOA<br>500 �F 3 W L = 10 mH L = 200 �H L = 500 �H<br>RB2 = ∞ RB2 = 0 RB2 = 0<br>1 �F VCC = 20 Volts VCC = 15 Volts VCC = 15 Volts<br>IC(pk) = 100 mA RB1 selected for RB1 selected for<br>-Voff desired IB1 desired IB1<br>TYPICAL CHARACTERISTICS<br>100 6<br>TC ≤ 125°C<br>5 GAIN ≥ 5<br>10 1 �s LC = 2 mH<br>10 �s 4<br>5 ms 1 ms<br>1 3<br>DC<br>2<br>-5 V<br>0.1<br>1<br>0 V -1.5 V<br>0.01 0<br>10 100 1000 200 300 400 500 600 700 800<br>VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)<br>EXTENDED SOA<br>IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)<br>**----- End of picture text -----**<br> **Figure 28. Forward Bias Safe Operating Area** **Figure 29. Reverse Bias Safe Operating Area** **www.onsemi.com** **9** **BUL45D2G** ## **TYPICAL CHARACTERISTICS** **==> picture [241 x 170] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>SECOND BREAKDOWN<br>0.8 DERATING<br>0.6<br>THERMAL DERATING<br>0.4<br>0.2<br>0<br>20 40 60 80 100 120 140 160<br>TC, CASE TEMPERATURE (°C)<br>POWER DERATING FACTOR<br>**----- End of picture text -----**<br> **Figure 30. Forward Bias Power Derating** There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC −VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 28 is based on TC = 25°C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC > 25°C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 28 may be found at any case temperature by using the appropriate curve on Figure 30. TJ(pk) may be calculated from the data in Figure 31. At any case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. For inductive loads, high voltage and current must be sustained simultaneously during turn−off with the base to emitter junction reverse biased. The safe level is specified as a reverse biased safe operating area (Figure 29). This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. ## **TYPICAL THERMAL RESPONSE** **==> picture [485 x 171] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>0.5<br>0.2<br>0.1<br>P(pk) R�JC(t) = r(t) R�JC<br>0.1 0.05 R�JC = 2.5°C/W MAX<br>D CURVES APPLY FOR POWER<br>0.02 PULSE TRAIN SHOWN<br>t1<br>SINGLE PULSE t2 READ TIME AT t1<br>DUTY CYCLE, D = t 1 /t 2 TJ(pk) - TC = P(pk) R�JC(t)<br>0.01<br>0.01 0.1 1 10 100 1000<br>t, TIME (ms)<br>(NORMALIZED)<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br> **Figure 31. Typical Thermal Response (Z** � **JC(t)) for BUL45D2** **www.onsemi.com** **10** **BUL45D2G** ## **PACKAGE DIMENSIONS** **TO−220** CASE 221A−09 ISSUE AH - NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. |||||||||||||||||||||||||||Y14.5M, 1982.|Y14.5M, 1982.|Y14.5M, 1982.|Y14.5M, 1982.| |---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---| ||||||||||||||||||||||||**−T−**|**SEATING**<br>**PLANE**|2. <br>3.|Y14.5M, 1982.<br> CONTROLLING DIMENSION: INCH.<br> DIMENSION Z DEFINES A ZONE WHERE ALL|||| |||||||||**B**|||||||**F**|||||**C**||||||BODY AND LEAD IRREGULARITIES ARE|||BODY AND LEAD IRREGULARITIES ARE| |||||||**4**||||||||||**T**|**S**|||||||||ALLOWED.<br>**DIM**<br>**MIN**<br>**MAX**<br>**INCHES**|**MIN**<br>**MAX**<br>**MILLIMETERS**||| |||**Q**|||||||||||**A**|||||||||||||**A**<br>0.570<br>0.620<br>**B**<br>0.380<br>0.415<br>**C**<br>0.160<br>0.190|14.48<br>9.66<br>4.07||15.75<br>10.53<br>4.83| |**H**<br>**Z**<br>**L**<br>**V**<br>**G**<br>**K**<br>**1**<br>**2 3**<br>**D**<br>~~THe~~<br>~~;~~||||||||||||||||**U**|**R**<br>**J**|~~|~~||||||||**D**<br>0.025<br>0.038<br>0.64<br>0.96<br>**F**<br>0.142<br>0.161<br>3.61<br>4.09<br>**G**<br>0.095<br>0.105<br>2.42<br>2.66<br>**H**<br>0.110<br>0.161<br>2.80<br>4.10<br>**J**<br>0.014<br>0.024<br>0.36<br>0.61<br>**K**<br>0.500<br>0.562<br>12.70<br>14.27<br>**L**<br>0.045<br>0.060<br>1.15<br>1.52<br>**N**<br>0.190<br>0.210<br>4.83<br>5.33<br>**Q**<br>0.100<br>0.120<br>2.54<br>3.04<br>**R**<br>0.080<br>0.110<br>2.04<br>2.79<br>**S**<br>0.045<br>0.055<br>1.15<br>1.39<br>**T**<br>0.235<br>0.255<br>5.97<br>6.47<br>**U**<br>0.000<br>0.050<br>0.00<br>1.27<br>**V**<br>0.045<br>---<br>1.15<br>---<br>**Z**<br>---<br>0.080<br>---<br>2.04<br>SSEEe|||| ||||||||||**N**||||||||||||||||||||| |||||||||||||||||||||||||||STYLE 1:|||| |||||||||||||||||||||||||||PIN 1.<br>BASE|||| |||||||||||||||||||||||||||2.<br>COLLECTOR|||| |||||||||||||||||||||||||||3.<br>EMITTER|||| |||||||||||||||||||||||||||4.<br>COLLECTOR|||| 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. ## **PUBLICATION ORDERING INFORMATION** **LITERATURE FULFILLMENT** : **N. American Technical Support** : 800−282−9855 Toll Free **ON Semiconductor Website** : **www.onsemi.com** Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 5163, Denver, Colorado 80217 USA **Europe, Middle East and Africa Technical Support: Order Literature** : http://www.onsemi.com/orderlit **Phone** : 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 **Fax** : 303−675−2176 or 800−344−3867 Toll Free USA/Canada **Japan Customer Focus Center** For additional information, please contact your local **Email** : orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative ## **LITERATURE FULFILLMENT** : **www.onsemi.com** **BUL45D2/D** **11**
Updated at March 24, 2026
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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