BUL381D
Bipolar (BJT) Single Transistor, NPN, 400 V, 3 A, 70 W, TO-220, Through Hole
- Manufacturer: STMICROELECTRONICS
- Product type:
- Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:400V; Transition Frequency ft:-; Power Dissipation Pd:70W; DC Collector Cur; Available until stocks are exhausted Alternative available
- MSL: -
- SVHC: No SVHC (17-Dec-2015)
- No. of Pins: 3Pins
- Product Range: -
- Qualification: -
- Power Dissipation: 70W
- Transistor Mounting: Through Hole
- Transistor Polarity: NPN
- Transition Frequency: -
- Transistor Case Style: TO-220
- DC Current Gain hFE Min: 10hFE
- Operating Temperature Max: 150°C
- Continuous Collector Current: 3A
- Collector Emitter Voltage Max: 400V
| Delivery and price | |
|---|---|
| Units per pack | 100 |
| Price | 0.472 € |
| Current stock | 200+ |
| Lead time | 30 days |
**==> picture [7 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> ®<br>**----- End of picture text -----**<br> ## **BUL381D** ## HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR - I STMicroelectronics PREFERRED SALESTYPE - I HIGH VOLTAGE CAPABILITY - I LOW SPREAD OF DYNAMIC PARAMETERS - I MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION - I VERY HIGH SWITCHING SPEED - I LARGE RBSOA - I INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE **==> picture [88 x 87] intentionally omitted <==** **----- Start of picture text -----**<br> 3<br>2<br>1<br>**----- End of picture text -----**<br> ## **APPLICATIONS** - I ELECTRONIC TRANSFORMERS FOR HALOGEN LAMPS **==> picture [35 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> TO-220<br>**----- End of picture text -----**<br> - I ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING - I SWITCH MODE POWER SUPPLIES ## **DESCRIPTION** The BUL381D is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. The BUL series is designed for use in lighting applications and low cost switch-mode power supplies. ## **INTERNAL SCHEMATIC DIAGRAM** **==> picture [68 x 93] intentionally omitted <==** ## **ABSOLUTE MAXIMUM RATINGS** |**Symbol**|**Parameter**|**Value**|**Unit**| |---|---|---|---| |VCES|Collector-Emitter Voltage(VBE= 0)|800|V| |VCEO|Collector-Emitter Voltage(IB= 0)|400|V| |VEBO|Emitter-Base Voltage(IC= 0)|9|V| |IC|Collector Current|5|A| |ICM|Collector Peak Current(tp< 5 ms)|8|A| |IB|Base Current|2|A| |IBM|Base Peak Current(tp< 5 ms)|4|A| |Ptot|Total Dissipation at Tc= 25oC|70|W| |Tstg|Storage Temperature|-65 to 150|oC| |Tj|Max. OperatingJunction Temperature|150|oC| 1/6 July 2003 **BUL381D** ## **THERMAL DATA** Rthj-case Thermal Resistance Junction-Case Max 1.78 oC/W Rthj-amb Thermal Resistance Junction-Ambient Max 62.5 oC/W ## **ELECTRICAL CHARACTERISTICS** (Tcase = 25[o] C unless otherwise specified) |**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**| |---|---|---|---|---|---|---| |ICES|Collector Cut-off<br>Current (VBE= 0)|VCE= 800 V<br>VCE= 800 V Tj= 125oC|||100<br>500|µA<br>µA| |ICEO|Collector Cut-off<br>Current(IB= 0)|VCE= 400 V|||250|µA| |VCEO(sus)∗|Collector-Emitter<br>Sustaining Voltage<br>(IB= 0)|IC= 100 mA L = 25 mH|400|||V| |VEBO|Emitter-Base Voltage<br>(IC= 0)|IE= 10 mA|9|||V| |VCE(sat)∗|Collector-Emitter<br>Saturation Voltage|IC= 1 A IB= 0.2 A<br>IC= 2 A IB= 0.4 A<br>IC= 3 A IB= 0.75 A|||0.5<br>0.7<br>1.1|V<br>V<br>V| |VBE(sat)∗|Base-Emitter<br>Saturation Voltage|IC= 1 A IB= 0.2 A<br>IC= 2 A IB= 0.4 A|||1.1<br>1.2|V<br>V| |hFE∗|DC Current Gain|IC= 2 A VCE= 5 V<br>IC= 10 mA VCE= 5 V|8<br>10|||| |ts<br>tf|RESISTIVE LOAD<br>Storage Time<br>Fall Time|IC= 2 A VCC= 250 V tp= 30µs<br>IB1= - IB2= 0.4 A|1.5||2.5<br>0.8|µs<br>µs| |ts<br>tf|INDUCTIVE LOAD<br>Storage Time<br>Fall Time|IC= 2 A IB1= 0.4 A<br>VBE(off)= -5 V RBB= 0Ω<br>VCL= 250 V L = 200µH<br>Tj= 125oC||1.3<br>100||µs<br>ns| |Vf|Diode Forward Voltage|IC= 2 A|||2.5|V| ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % ## Safe Operating Area ## Derating Curve **==> picture [180 x 174] intentionally omitted <==** **==> picture [177 x 173] intentionally omitted <==** 2/6 **BUL381D** ## DC Current Gain **==> picture [172 x 174] intentionally omitted <==** Collector Emitter Saturation Voltage **==> picture [186 x 174] intentionally omitted <==** Inductive Fall Time **==> picture [188 x 174] intentionally omitted <==** ## DC Current Gain **==> picture [172 x 174] intentionally omitted <==** Base Emitter Saturation Voltage **==> picture [187 x 173] intentionally omitted <==** Inductive Storage Time **==> picture [187 x 174] intentionally omitted <==** 3/6 **BUL381D** ## Reverse Biased SOA **==> picture [184 x 174] intentionally omitted <==** Inductive Load Switching Test Circuit **==> picture [58 x 34] intentionally omitted <==** **==> picture [67 x 82] intentionally omitted <==** **==> picture [109 x 30] intentionally omitted <==** **----- Start of picture text -----**<br> 1) Fast electronic switch<br>2) Non-inductive Resistor<br>3) Fast recovery rectifier<br>**----- End of picture text -----**<br> **==> picture [138 x 112] intentionally omitted <==** Resistive Load Switching Test Ciurcuit **==> picture [289 x 159] intentionally omitted <==** - 1) Fast electronic switch 2) Non-inductive Resistor 4/6 **BUL381D** ## **TO-220 MECHANICAL DATA** |**DIM.**|**mm**|**mm**|**mm**|**inch**|**inch**|**inch**| |---|---|---|---|---|---|---| ||**MIN.**|**TYP.**|**MAX.**|**MIN.**|**TYP.**|**MAX.**| |A|4.40||4.60|0.173||0.181| |C|1.23||1.32|0.048||0.052| |D|2.40||2.72|0.094||0.107| |E|0.49||0.70|0.019||0.027| |F|0.61||0.88|0.024||0.034| |F1|1.14||1.70|0.044||0.067| |F2|1.14||1.70|0.044||0.067| |G|4.95||5.15|0.194||0.202| |G1|2.40||2.70|0.094||0.106| |H2|10.00||10.40|0.394||0.409| |L2||16.40|||0.645|| |L4|13.00||14.00|0.511||0.551| |L5|2.65||2.95|0.104||0.116| |L6|15.25||15.75|0.600||0.620| |L7|6.20||6.60|0.244||0.260| |L9|3.50||3.93|0.137||0.154| |M||2.60|||0.102|| |DIA.|3.75||3.85|0.147||0.151| **==> picture [333 x 272] intentionally omitted <==** P011CI 5/6 **BUL381D** Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics - © 2003 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. **http://www.st.com** 6/6
Updated at April 27, 2026
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