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BUK7Y13-40B,115
Power MOSFET, N Channel, 40 V, 58 A, 0.011 ohm, LFPAK56, Surface Mount
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- Manufacturer: NEXPERIA
- Product type: Single MOSFETs
- MSL: MSL 1 - Unlimited
- SVHC: Lead (25-Jun-2025)
- No. of Pins: 4Pins
- Channel Type: N Channel
- Product Range: TrenchMOS
- Qualification: AEC-Q101
- Power Dissipation: 85W
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Transistor Case Style: LFPAK56
- Drain Source Voltage Vds: 40V
- Operating Temperature Max: 175°C
- Continuous Drain Current Id: 58A
- Drain Source On State Resistance: 0.011ohm
- Gate Source Threshold Voltage Max: 3V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.363 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**Product data sheet** ## **BUK7Y13-40B** ## **N-channel TrenchMOS standard level FET** **Rev. 03 — 26 May 2008** ## **1. Product profile** ## **1.1 General description** Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ## **1.2 Features and benefits** - 175 °C rated - Suitable for standard level gate drive sources - Q101 compliant - Suitable for thermally demanding environments due to 175 °C rating ## **1.3 Applications** - 12 V loads - Automotive ABS systems - Fuel pump and injection - Air bag - Automotive transmission control - Motors, lamps and solenoids ## **1.4 Quick reference data** |**Table 1.**|**Quick reference**||||||| |---|---|---|---|---|---|---|---| |**Symbol**|**Parameter**|**Conditions**||**Min**|**Typ**|**Max**|**Unit**| |VDS|drain-source voltage|Tj≥25°C; Tj≤175°C||-|-|40|V| |ID|drain current|VGS= 10 V; Tmb= 25°C;||-|-|58|A| |||see Figure 1<br> and 4|||||| ||||||||| |Ptot|total power dissipation|Tmb= 25°C; see Figure 2||-|-|85|W| ||||||||| |**Dynamic**|**characteristics**||||||| |QGD|gate-drain charge|ID= 10 A; VDS= 32 V;||-|5|-|nC| |||VGS= 10 V; see Figure 14|||||| ||||||||| |**Static characteristics**|||||||| |RDSon|drain-source on-state|VGS= 10 V; ID= 25 A;||-|11|13|mΩ| ||resistance|Tj= 25°C; see Figure 13<br>|and||||| |||12|||||| |**Avalanche ruggedness**|||||||| |EDS(AL)S|non-repetitive|ID= 58 A; Vsup≤40 V;||-|-|85|mJ| ||drain-source|RGS= 50Ω; VGS= 10 V;|||||| ||avalanche energy|Tj(init)= 25°C; unclamped|||||| **==> picture [81 x 42] intentionally omitted <==** **BUK7Y13-40B** **NXP Semiconductors** **N-channel TrenchMOS standard level FET** ## **2. Pinning information** **==> picture [497 x 117] intentionally omitted <==** **----- Start of picture text -----**<br> |||||| |---|---|---|---|---| |Table 2.|Pinning| |Pin|Symbol|Description|Simplified outline|Graphic symbol| |1, 2, 3|S|source| |mb|D| |4|G|gate| |mb|D|mounting base;|G| |connected to drain| |mbb076|S| |1|2|3|4| |SOT669 (LFPAK)| **----- End of picture text -----**<br> ## **3. Ordering information** ## **Table 3. Ordering information** **==> picture [497 x 44] intentionally omitted <==** **----- Start of picture text -----**<br> ||||| |---|---|---|---| |Type number|Package| |Name|Description|Version| |BUK7Y13-40B|LFPAK|plastic single-ended surface-mounted package (LFPAK); 4 leads|SOT669| **----- End of picture text -----**<br> ## **4. Limiting values** ## **Table 4. Limiting values** _In accordance with the Absolute Maximum Rating System (IEC 60134)._ **==> picture [497 x 273] intentionally omitted <==** **----- Start of picture text -----**<br> ||||||||| |---|---|---|---|---|---|---|---| |Symbol|Parameter|Conditions|Min|Max|Unit| |VDS|drain-source voltage|Tj ≥|25 °C; Tj ≤|175 °C|-|40|V| |VDGR|drain-gate voltage|RGS = 20 kΩ|-|40|V| |VGS|gate-source voltage|20|20|V| |ID|drain current|Tmb = 25 °C; VGS = 10 V; see Figure 1|and|4|-|58|A| |Tmb = 175 °C; VGS = 10 V; see|Figure 1|-|41|A| |IDM|peak drain current|Tmb = 25 °C; tp ≤|10 μs; pulsed; see|Figure 4|-|234|A| |Ptot|total power dissipation|Tmb = 25 °C; see Figure 2|-|85|W| |Tstg|storage temperature|-55|175|°C| |Tj|junction temperature|-55|175|°C| |Avalanche ruggedness| |EDS(AL)S|non-repetitive|ID = 58 A; Vsup ≤|40 V; RGS = 50 Ω;|-|85|mJ| |drain-source avalanche|VGS = 10 V; Tj(init) = 25 °C; unclamped| |energy| |EDS(AL)R|repetitive drain-source|see|Figure 3|[1][2]|-|-|J| |avalanche energy|[3]| |Source-drain diode| |IS|source current|Tmb = 25 °C|-|58|A| |ISM|peak source current|tp ≤|10 μs; pulsed; Tmb = 25 °C|-|234|A| **----- End of picture text -----**<br> [1] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C. [2] Repetitive avalanche rating limited by an average junction temperature of 170 °C. [3] Refer to application note AN10273 for further information. © NXP B.V. 2008. All rights reserved. BUK7Y13-40B_3 **Product data sheet** **Rev. 03 — 26 May 2008** **2 of 12** **BUK7Y13-40B** **NXP Semiconductors** **N-channel TrenchMOS standard level FET** **==> picture [497 x 277] intentionally omitted <==** **----- Start of picture text -----**<br> 003aab217 03na19<br>60 120<br>ID Pder<br>(A) (%)<br>40 80<br>20 40<br>0 0<br>0 50 100 150 200 0 50 100 150 200<br>Tmb (°C) Tmb (°C)<br>VGS � 10 V P = Ptot<br>der Ptot (25 °C ) [× 100 %]<br>Fig 1. Continuous drain current as a function of Fig 2. Normalized total power dissipation as a<br>mounting base temperature function of mounting base temperature<br>**----- End of picture text -----**<br> **==> picture [444 x 259] intentionally omitted <==** **----- Start of picture text -----**<br> 003aab220<br> 10 [2]<br>(1)<br>IAL<br>(A)<br> 10<br>(2)<br>(3)<br> 1<br>10 [-1]<br>10 [-3] 10 [-2] 10 [-1] 1 10<br>tAL (ms)<br>(1) Single � pulse; T j = 25 °C .<br>(2) Single � pulse; T j = 150 °C .<br>(3) Repetitive.<br>Fig 3. Single-shot and repetitive avalanche rating; avalanche current as a function of avalanche period<br>**----- End of picture text -----**<br> © NXP B.V. 2008. All rights reserved. BUK7Y13-40B_3 **Product data sheet** **Rev. 03 — 26 May 2008** **3 of 12** **BUK7Y13-40B** **NXP Semiconductors** ## **N-channel TrenchMOS standard level FET** **==> picture [481 x 213] intentionally omitted <==** **----- Start of picture text -----**<br> 003aab218<br>10 [3]<br>ID Limit RDSon = VDS / ID<br>(A)<br>10 [2] tp = 10 μs<br>100 μs<br>10<br>1 ms<br>DC<br>10 ms<br>1 100 ms<br>10 [−][1]<br>1 10 10 [2]<br>VDS (V)<br>Tmb = 25 °C ; IDM is single pulse<br>**----- End of picture text -----**<br> **Fig 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage** ## **5. Thermal characteristics** ## **Table 5. Thermal characteristics** **==> picture [497 x 303] intentionally omitted <==** **----- Start of picture text -----**<br> Symbol Parameter Conditions Min Typ Max Unit<br>Rth(j-mb) thermal resistance see Figure 5 - - 1.8 K/W<br>from junction to<br>mounting base<br>03nm01<br> 10<br>Zth (j-mb)<br>(K/W)<br> 1<br>δ = 0.5<br>0.2<br>0.1 P δ = tp<br>10 [-1] 0.05 T<br>0.02<br>tp t<br>single shot T<br>10 [-2]<br>10 [-6] 10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] tp (s) 1<br>Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration<br>**----- End of picture text -----**<br> © NXP B.V. 2008. All rights reserved. BUK7Y13-40B_3 **Product data sheet** **Rev. 03 — 26 May 2008** **4 of 12** **BUK7Y13-40B** **NXP Semiconductors** **N-channel TrenchMOS standard level FET** ## **6. Characteristics** |**Table 6.**<br>**Characteristics**||| |---|---|---| |**Symbol**<br>**Parameter**|**Conditions**|**Min**<br>**Typ**<br>**Max**<br>**Unit**| |**Static characteristics**||| |V(BR)DSS<br>drain-source<br>breakdown voltage|ID= 250μA; VGS= 0 V;<br>Tj= 25°C|40<br>-<br>-<br>V| ||ID= 250μA; VGS= 0 V;<br>Tj= -55°C|36<br>-<br>-<br>V| |VGS(th)<br>gate-source threshold<br>voltage|ID= 1 mA; VDS= VGS; Tj= 25°C;<br>seeFigure 10<br> and 11|2<br>3<br>4<br>V| ||ID= 1 mA; VDS= VGS;<br>Tj= -55°C; seeFigure 10|-<br>-<br>4.4<br>V| ||ID= 1 mA; VDS= VGS;<br>Tj= 175°C; seeFigure 10|1<br>-<br>-<br>V| |IDSS<br>drain leakage current|VDS= 40 V; VGS= 0 V;<br>Tj= 175°C|-<br>-<br>500<br>μA| ||VDS= 40 V; VGS= 0 V; Tj= 25°C|-<br>0.02<br>1<br>μA| |IGSS<br>gate leakage current|VDS= 0 V; VGS= 20 V; Tj= 25°C|-<br>2<br>100<br>nA| ||VDS= 0 V; VGS= -20 V;<br>Tj= 25°C|-<br>2<br>100<br>nA| |RDSon<br>drain-source on-state<br>resistance|VGS= 10 V; ID= 25 A;<br>Tj= 175°C; seeFigure 12|-<br>-<br>25<br>mΩ| ||VGS= 10 V; ID= 25 A; Tj= 25°C;<br>see Figure 13<br> and 12|-<br>11<br>13<br>mΩ| |**Source-drain diode**||| |VSD<br>source-drain voltage|IS= 25 A; VGS= 25 V; Tj= 25°C;<br>seeFigure 16|-<br>0.85<br>1.2<br>V| |trr<br>reverse recovery time|IS= 20 A; dIS/dt = 100 A/μs;<br>VGS= 0 V; VDS= 30 V|-<br>41<br>-<br>ns| |Qr<br>recovered charge||-<br>22<br>-<br>nC| |**Dynamic characteristics**||| |QG(tot)<br>total gate charge|ID= 10 A; VDS= 32 V;<br>VGS= 10 V; see Figure 14|-<br>19<br>-<br>nC| |QGS<br>gate-source charge||-<br>6<br>-<br>nC| |QGD<br>gate-drain charge||-<br>5<br>-<br>nC| |Ciss<br>input capacitance|VGS= 0 V; VDS= 25 V;<br>f = 1 MHz; Tj= 25°C;<br>see Figure 15|-<br>983<br>1311<br>pF| |Coss<br>output capacitance||-<br>280<br>336<br>pF| |Crss<br>reverse transfer<br>capacitance||-<br>138<br>189<br>pF| |td(on)<br>turn-on delay time|VDS= 30 V; RL= 2.5Ω;<br>VGS= 10 V; RG(ext)= 10Ω|-<br>9<br>-<br>ns| |tr<br>rise time||-<br>25<br>-<br>ns| |td(off)<br>turn-off delay time||-<br>35<br>-<br>ns| |tf<br>fall time||-<br>27<br>-<br>ns| © NXP B.V. 2008. All rights reserved. BUK7Y13-40B_3 **Product data sheet** **Rev. 03 — 26 May 2008** **5 of 12** **BUK7Y13-40B** **NXP Semiconductors** ## **N-channel TrenchMOS standard level FET** **==> picture [497 x 488] intentionally omitted <==** **----- Start of picture text -----**<br> 003aab394 003aab395<br>160 20<br>ID<br>(A) 20 10 9.5 9 R(mDSonΩ)<br>8.5<br>120<br>8 15<br>7.5<br>80 7<br>6.5<br>10<br>6<br>40<br>5.5<br>5<br>VGS (V) = 4.5<br>0 5<br>0 2 2 6 8 10 4 8 12 16 20<br>VDS (V) VGS (V)<br>T j = 25 °C T j = 25 °C ; ID = 25 A<br>Fig 6. Output characteristics: drain current as a Fig 7. Drain-source on-state resistance as a function<br>function of drain-source voltage; typical values of gate-source voltage; typical values<br>003aab400 003aab401<br>50 70<br>ID<br>gfsfs<br>(A)<br>(S)<br>40<br>60<br>30<br>50<br>20<br>Tj = 175 °C 40<br>10<br>Tj = 25 °C<br>0 30<br>0 2 4 6 5 10 15 20 25 30<br>VGS (V) ID (A)D (A) (A)<br>VDS = 25 V T j = 25 °C ; VDSDS = 25 V<br>**----- End of picture text -----**<br> **==> picture [233 x 214] intentionally omitted <==** **----- Start of picture text -----**<br> 003aab401<br>70<br>gfsfs<br>(S)<br>60<br>50<br>40<br>30<br>5 10 15 20 25 30<br>ID (A)D (A) (A)<br>T j = 25 °C ; VDSDS = 25 V<br>**----- End of picture text -----**<br> **Fig 8. Transfer characteristics: drain current as a function of gate-source voltage; typical values** **Fig 9. Forward transconductance as a function of drain current; typical values** © NXP B.V. 2008. All rights reserved. BUK7Y13-40B_3 **Product data sheet** **Rev. 03 — 26 May 2008** **6 of 12** **BUK7Y13-40B** **NXP Semiconductors** ## **N-channel TrenchMOS standard level FET** **==> picture [481 x 215] intentionally omitted <==** **----- Start of picture text -----**<br> 03aa32 03aa35<br>5 10 [−][1]<br>VGS(th) ID<br>(V) (A)<br>4 max 10 [−][2] min typ max<br>3 10 [−][3]<br>typ<br>2 min 10 [−][4]<br>1 10 [−][5]<br>0 10 [−][6]<br>−60 0 60 120 180 0 2 4 6<br>Tj (°C) VGS (V)<br>ID = 1 mA ; VDS = VGS T j = 25 °C ; VDS = VGS<br>**----- End of picture text -----**<br> **Fig 10. Gate-source threshold voltage as a function of Fig 11. Sub-threshold drain current as a function of junction temperature gate-source voltage** **==> picture [233 x 221] intentionally omitted <==** **----- Start of picture text -----**<br> 003aab851<br>2<br>a<br>1.5<br>1<br>0.5<br>0<br>−60 0 60 120 180<br>Tj (°C)<br>RDSon<br>a =<br>RDSon (25 °C )<br>**----- End of picture text -----**<br> **==> picture [233 x 213] intentionally omitted <==** **----- Start of picture text -----**<br> 003aab396<br>30<br>VGS (V) = 6 7 8<br>RDSon<br>(mΩ)<br>20<br>10<br>20<br>10<br>0<br>0 40 80 120 160<br>ID (A)<br>T = 25 °C<br> j<br>**----- End of picture text -----**<br> **Fig 12. Normalized drain-source on-state resistance factor as a function of junction temperature** **Fig 13. Drain-source on-state resistance as a function of drain current; typical values** © NXP B.V. 2008. All rights reserved. BUK7Y13-40B_3 **Product data sheet** **Rev. 03 — 26 May 2008** **7 of 12** **BUK7Y13-40B** **NXP Semiconductors** ## **N-channel TrenchMOS standard level FET** **==> picture [481 x 214] intentionally omitted <==** **----- Start of picture text -----**<br> 003aab399 003aab397<br>10 1600<br>VGS C<br>(V)<br>(pF)<br>8 Ciss<br>VDS = 14 V 1200<br>VDS = 32 V<br>6<br>Coss<br>800<br>4<br>400<br>2 Crss<br>0 0<br>0 8 16 24 10 [−][1] 1 10 10 [2]<br>QG (nC) VDS (V)<br>T j = 25 °C ; ID = 10 A VGS = 0 V ; f = 1 M H z<br>**----- End of picture text -----**<br> **==> picture [497 x 257] intentionally omitted <==** **----- Start of picture text -----**<br> Fig 14. Gate-source voltage as a function of gate Fig 15. Input, output and reverse transfer capacitances<br>charge; typical values as a function of drain-source voltage; typical<br>values<br>003aab398<br>60<br>Is<br>(A)<br>40<br>Tj = 175 °C<br>20<br>Tj = 25 °C<br>0<br>0 0.2 0.4 0.6 0.8 1.0<br>VSD (V)<br>VGS = 0 V<br>**----- End of picture text -----**<br> **Fig 16. Source current as a function of source-drain voltage; typical values** © NXP B.V. 2008. All rights reserved. BUK7Y13-40B_3 **Product data sheet** **Rev. 03 — 26 May 2008** **8 of 12** **BUK7Y13-40B** **NXP Semiconductors** **N-channel TrenchMOS standard level FET** ## **7. Package outline** ## **Plastic single-ended surface-mounted package (LFPAK); 4 leads** ## **SOT669** **==> picture [478 x 570] intentionally omitted <==** **----- Start of picture text -----**<br> A2<br>E A C<br>b2 c2 E1<br>L1 b3<br>mounting<br>base b4<br>D1<br>H D<br>L2<br>1 2 3 4<br>X<br>e b w M A c<br>1/2 e<br>A (A )3<br>A1 C<br>θ<br>L<br>detail X<br>y C<br>0 2.5 5 mm<br>scale<br>DIMENSIONS (mm are the original dimensions)<br>UNIT A A1 A2 A3 b b2 b3 b4 c c2 D [(1)] D1max [(1)] E [(1)] E1(1) e H L L1 L2 w y θ<br>1.20 0.15 1.10 0.50 4.41 2.2 0.9 0.25 0.30 4.10 5.0 3.3 6.2 0.85 1.3 1.3 8°<br>mm 1.01 0.00 0.95 0.25 0.35 3.62 2.0 0.7 0.19 0.24 3.80 4.20 4.8 3.1 1.27 5.8 0.40 0.8 0.8 0.25 0.1 0°<br>Note<br>1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.<br>OUTLINE REFERENCES EUROPEAN<br>ISSUE DATE<br>VERSION IEC JEDEC JEITA PROJECTION<br>04-10-13<br>SOT669 MO-235<br>06-03-16<br>**----- End of picture text -----**<br> ## **Fig 17. Package outline SOT669 (LFPAK)** © NXP B.V. 2008. All rights reserved. BUK7Y13-40B_3 **Product data sheet** **Rev. 03 — 26 May 2008** **9 of 12** **BUK7Y13-40B** **NXP Semiconductors** **N-channel TrenchMOS standard level FET** ## **8. Revision history** |**Table 7.**<br>**Revision**|**history**||||| |---|---|---|---|---|---| |**Document ID**|**Release date**||**Data sheet status**|**Change notice**|**Supersedes**| |BUK7Y13-40B_3|20080526||Product data sheet|-|BUK7Y13-40B_2| |Modifications:|**•** Table|5<br>,maximum thermal resistance value||updated|| |BUK7Y13-40B_2|20071002||Product data sheet|-|BUK7Y13-40B_1| |BUK7Y13-40B_1|20070924||Product data sheet|-|-| © NXP B.V. 2008. All rights reserved. BUK7Y13-40B_3 **Product data sheet** **Rev. 03 — 26 May 2008** **10 of 12** **BUK7Y13-40B** **NXP Semiconductors** **N-channel TrenchMOS standard level FET** ## **9. Legal information** ## **9.1 Data sheet status** |**Document statu**~~**s**~~**[1]**<br>**[2]**|**Product status[3]**|**Definition**| |---|---|---| |Objective [short] data sheet|Development|This document contains data from the objective specification for product development.| |Preliminary [short] data sheet|Qualification|This document contains data from the preliminary specification.| |Product [short] data sheet|Production|This document contains the product specification.| - [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. ## **9.2 Definitions** **Draft —** The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. **Short data sheet —** A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. ## **9.3 Disclaimers** **General —** Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. **Right to make changes —** NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. **Suitability for use —** NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. **Applications —** Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. **Quick reference data —** The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. **Limiting values —** Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. **Terms and conditions of sale —** NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. **No offer to sell or license —** Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. ## **9.4 Trademarks** Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. **TrenchMOS —** is a trademark of NXP B.V. ## **10. Contact information** For additional information, please visit: **http://www.nxp.com** For sales office addresses, send an email to: **salesaddresses@nxp.com** © NXP B.V. 2008. All rights reserved. BUK7Y13-40B_3 **Product data sheet** **Rev. 03 — 26 May 2008** **11 of 12** **BUK7Y13-40B** **NXP Semiconductors** **N-channel TrenchMOS standard level FET** ## **11. Contents** |**1**|**Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1**| |---|---| |1.1|General description . . . . . . . . . . . . . . . . . . . . . 1| |1.2|Features and benefits. . . . . . . . . . . . . . . . . . . . 1| |1.3|Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| |1.4|Quick reference data . . . . . . . . . . . . . . . . . . . . 1| |**2**|**Pinning information. . . . . . . . . . . . . . . . . . . . . . 2**| |**3**|**Ordering information. . . . . . . . . . . . . . . . . . . . . 2**| |**4**|**Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2**| |**5**|**Thermal characteristics . . . . . . . . . . . . . . . . . . 4**| |**6**|**Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5**| |**7**|**Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9**| |**8**|**Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10**| |**9**|**Legal information. . . . . . . . . . . . . . . . . . . . . . . 11**| |9.1|Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11| |9.2|Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11| |9.3|Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11| |9.4|Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11| |**10**|**Contact information. . . . . . . . . . . . . . . . . . . . . 11**| |**11**|**Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12**| Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. **==> picture [84 x 52] intentionally omitted <==** **All rights reserved.** **© NXP B.V. 2008.** For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com **Date of release: 26 May 2008 Document identifier: BUK7Y13-40B_3**
Updated at April 24, 2026
Nexperia is a dedicated global leader in discretes, logic, and MOSFET devices. Built on over half a century of semiconductor expertise and operating independently since 2017, the company produces consistently reliable components at an exceptional volume of 85 billion units annually. With its own manufacturing facilities, Nexperia delivers industry-leading small packages that combine power and thermal efficiency with best-in-class quality, meeting the rigorous standards of the automotive sector. Our extensive Nexperia portfolio is heavily focused on discrete semiconductors, providing engineers with a robust selection of core building blocks. This includes a comprehensive range of diodes and rectifiers, featuring a vast selection of Zener single diodes and Schottky diodes designed for precise voltage regulation and efficient power routing. Additionally, we offer an expansive array of bipolar transistors and single MOSFETs tailored for reliable switching and amplification in demanding applications. Beyond these primary offerings, the lineup extends into specialized circuit protection and passive components. This includes transient voltage suppressor (TVS) diodes, Zener array diodes, and small signal diodes, alongside dual MOSFETs and fast recovery rectifiers. For comprehensive design needs, the selection also encompasses integrated passive filters, common mode chokes, and precision timers and oscillators, ensuring a complete solution for high-performance electronic systems.
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
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