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BUK7610-55AL,118
Power MOSFET, N Channel, 55 V, 75 A, 0.0085 ohm, TO-263 (D2PAK), Surface Mount
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- Manufacturer: NEXPERIA
- Product type: Single MOSFETs
- Channel Type: N Channel
- Qualification: AEC-Q101
- Power Dissipation: 300W
- Drain Source On State Resistance: 0.0085ohm
| Delivery and price | |
|---|---|
| Units per pack | 4800 |
| Price | 1.37 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## **BUK7610-55AL** **N-channel TrenchMOS standard level FET** **Rev. 02 — 9 January 2008** **Product data sheet** ## **1. Product profile** ## **1.1 General description** N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia General-Purpose Automotive (GPA) TrenchMOS technology specifically optimized for linear operation. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ## **1.2 Features** 175 °C rated Stable operation in linear mode Q101 compliant TrenchMOS technology ## **1.3 Applications** 12 V and 24 V loads DC linear motor control Automotive systems Repetitive clamped inductive switching ## **1.4 Quick reference data** ## **Table 1. Quick reference** |**Symbol**|**Parameter**|**Conditions**|||**Min**|**Typ**|**Max**|**Unit**| |---|---|---|---|---|---|---|---|---| |ID|drain current|VGS= 10 V; Tmb= 25°C;|C;|[1]|-|-|75|A| |||seeFigure 4<br> and 1||||||| |||||||||| |Ptot|total power dissipation|Tmb= 25°C; seeFigure 2|||-|-|300|W| |||||||||| |**Avalanche ruggedness**||||||||| |EDS(AL)S|non-repetitive|ID= 75 A; Vsup≤55 V;|||-|-|1.1|J| ||drain-source|RGS= 50Ω; VGS= 10 V;||||||| ||avalanche energy|Tj(init)= 25°C; unclamped||||||| |||inductive load||||||| |**Static characteristics**||||||||| |RDSon|drain-source on-state|VGS= 10 V; ID= 25 A;|||-|8.5|10|mΩ| ||resistance|Tj= 25°C; see Figure 12<br>|and|||||| |||13||||||| - [1] Continuous current is limited by package. **BUK7610-55AL** **Nexperia** **N-channel TrenchMOS standard level FET** ## **2. Pinning information** |**Table**|**2.**|**Pinning**|||||||||||||| |---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---| |**Pin**||**Symbol**|**Description**|**Simplified outline**|||||||**Graphic symbol**||||| |1||G|gate|||mb|||||||D||| |2||D|drain||||||||||||| ||||||||||||||||| |3||S|source||||||||G||||| |mb||D|mounting base;<br>connected to drain||1|2|||3||_mbb076_||S||| |||||**SOT404**|||**(D2PAK)**||||||||| ## **3. Ordering information** ## **Table 3. Ordering information** |**Type number**|**Package**|**Package**|**Package**| |---|---|---|---| ||**Name**|**Description**|**Version**| |BUK7610-55AL|D2PAK<br>plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead<br>cropped)<br>SOT404||| ## **4. Limiting values** ## **Table 4. Limiting values** _In accordance with the Absolute Maximum Rating System (IEC 60134)._ |**Symbol**<br>**Parameter**|**Conditions**<br>**Min**<br>**Max**<br>**Unit**| |---|---| |VDS<br>drain-source voltage|Tj≥25°C; Tj≤175°C<br>-<br>55<br>V| |VDGR<br>drain-gate voltage|RGS= 20 kΩ<br>-<br>55<br>V| |VGS<br>gate-source voltage|-20<br>20<br>V| |ID<br>drain current|Tmb= 25°C; VGS= 10 V; seeFigure 4<br> and 1<br>[1]<br>[2]<br>-<br>122<br>A| ||Tmb= 25°C; VGS= 10 V; seeFigure 4<br> and 1<br>[3]<br>-<br>75<br>A| ||Tmb= 100°C; VGS= 10 V; see Figure 4<br>[3]<br>-<br>75<br>A| |IDM<br>peak drain current|Tmb= 25°C; tp≤10μs; pulsed<br>-<br>490<br>A| |Ptot<br>total power dissipation|Tmb= 25°C; seeFigure 2<br>-<br>300<br>W| |Tstg<br>storage temperature|-55<br>175<br>°C| |Tj<br>junction temperature|-55<br>175<br>°C| |**Avalanche ruggedness**|| |EDS(AL)S<br>non-repetitive<br>drain-source avalanche<br>energy|ID= 75 A; Vsup≤55 V; RGS= 50Ω;<br>VGS= 10 V; Tj(init)= 25°C; unclamped<br>inductive load<br>-<br>1.1<br>J| |EDS(AL)R repetitive drain-source<br>avalanche energy|seeFigure 3<br>[4]<br>[5]<br>[6]<br>-<br>-<br>J| |**Source-drain diode**|| |IS<br>source current|Tmb= 25°C<br>[1]<br>[2]<br>-<br>122<br>A| ||Tmb= 25°C<br>[3]<br>-<br>tp≤10μs; pulsed; Tmb= 25°C<br>-<br>490<br>A| |ISM<br>peak source current|| BUK7610-55AL_2 © Nexperia B.V. 2017. All rights reserved **Product data sheet** **Rev. 02 — 9 January 2008** **2 of 13** **BUK7610-55AL** **Nexperia** **N-channel TrenchMOS standard level FET** - [1] Current is limited by power dissipation chip rating. - [2] Refer to document 9397 750 12572 for further information. - [3] Continuous current is limited by package. - [4] Single shot avalanche rating limited by maximum junction temperature of 175 °C. - [5] Repetitive avalanche rating limited by average junction temperature of 170 °C. - [6] Refer to application note AN10273 for further information. **==> picture [481 x 222] intentionally omitted <==** **----- Start of picture text -----**<br> 003aaa726 03aa16<br>150 120<br>ID Pder<br>(A) (%)<br>100 80<br>(1)<br>50 40<br>0 0<br>0 50 100 150 200 0 50 100 150 200<br>Tmb (°C) Tmb (°C)<br>VGS � 10 V P = Ptot<br>der Ptot (25 °C ) [× 100 %]<br>**----- End of picture text -----**<br> **==> picture [126 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> (1) Capped at 75 A due to package.<br>**----- End of picture text -----**<br> **Fig 1. Continuous drain current as a function of Fig 2. Normalized total power dissipation as a mounting base temperature function of mounting base temperature** **==> picture [233 x 189] intentionally omitted <==** **----- Start of picture text -----**<br> 003aaa739<br> 10 [2] (1)<br>IAV Tj = 25 ˚C<br>(A) (2)<br> 10<br>(3) 150 ˚C<br> 1<br>10 [-1]<br>10 [-2] 10 [-1] 1 tAV (ms) 10<br>**----- End of picture text -----**<br> - (1) Single � shot. - (2) Single � shot. - (3) Repetitive. **Fig 3. Single-shot and repetitive avalanche rating; avalanche current as a function of a** © Nexperia B.V. 2017. All rights reserved BUK7610-55AL_2 **Product data sheet** **Rev. 02 — 9 January 2008** **3 of 13** **BUK7610-55AL** **Nexperia** ## **N-channel TrenchMOS standard level FET** **==> picture [481 x 227] intentionally omitted <==** **----- Start of picture text -----**<br> 003aaa737<br> 10 [3]<br>ID Limit RDSon = VDS / ID tp = 10 μ s<br>(A)<br> 10 [2] 100 μ s<br>(1)<br>1 ms<br>DC<br>10 ms<br> 10<br>100 ms<br> 1<br> 1 10 VDS (V) 10 [2]<br>Tmb = 25 °C ; IDM is single pulse<br>(1) Capped at 75 A due to package.<br>**----- End of picture text -----**<br> **Fig 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage** ## **5. Thermal characteristics** **Table 5. Thermal characteristics** |**Symbol**|**Parameter**|**Conditions**|**Min**|**Typ**|**Max**|**Unit**| |---|---|---|---|---|---|---| |Rth(j-a)|thermal resistance|mounted on a printed-circuit|-|50|-|K/W| ||from junction to|board; minimum footprint; vertical||||| ||ambient|in still air||||| |Rth(j-mb)|thermal resistance|seeFigure 5|-|0.25|0.5|K/W| ||from junction to|||||| ||mounting base|||||| © Nexperia B.V. 2017. All rights reserved BUK7610-55AL_2 **Product data sheet** **Rev. 02 — 9 January 2008** **4 of 13** **BUK7610-55AL** **Nexperia** **N-channel TrenchMOS standard level FET** **==> picture [481 x 190] intentionally omitted <==** **----- Start of picture text -----**<br> 003aaa734<br> 1<br>Zth(j-mb)<br> (K/W) δ = 0.5<br>0.2<br>10 [-1]<br>0.1<br>0.05<br>0.02<br>P δ = tp<br>10 [-2] T<br>single shot tp t<br>T<br>10 [-3]<br>10 [-6] 10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] tp (s) 1<br>**----- End of picture text -----**<br> **Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration** ## **6. Characteristics** **Table 6. Characteristics** |**Symbol**<br>**Parameter**|**Conditions**<br>**Min**<br>**Typ**<br>**Max**<br>**Unit**| |---|---| |**Static characteristics**|| |V(BR)DSS<br>drain-source<br>breakdown voltage|ID= 250μA; VGS= 0 V;<br>Tj= -55°C<br>50<br>-<br>-<br>V| ||ID= 250μA; VGS= 0 V;<br>Tj= 25°C<br>55<br>-<br>-<br>V| |VGS(th)<br>gate-source threshold<br>voltage|ID= 1 mA; VDS= VGS; Tj= 25°C;<br>seeFigure 10<br> and 11<br>2<br>3<br>4<br>V| ||ID= 1 mA; VDS= VGS;<br>Tj= 175°C; seeFigure 10<br> and<br>11<br>1<br>-<br>-<br>V| ||ID= 1 mA; VDS= VGS;<br>Tj= -55°C; seeFigure 10<br> and 11<br>-<br>-<br>4.4<br>V| |IDSS<br>drain leakage current|VDS= 55 V; VGS= 0 V;<br>Tj= 175°C<br>-<br>-<br>500<br>μA| ||VDS= 55 V; VGS= 0 V; Tj= 25°C<br>-<br>0.05<br>10<br>μA| |IGSS<br>gate leakage current|VDS= 0 V; VGS= +20 V;<br>Tj= 25°C<br>-<br>2<br>100<br>nA| ||VDS= 0 V; VGS= -20 V;<br>Tj= 25°C<br>-<br>2<br>100<br>nA| |RDSon<br>drain-source on-state<br>resistance|VGS= 10 V; ID= 25 A;<br>Tj= 175°C; seeFigure 12<br> and<br>13<br>-<br>-<br>20<br>mΩ| ||VGS= 10 V; ID= 25 A; Tj= 25°C;<br>see Figure 12<br> and 13<br>-<br>8.5<br>10<br>mΩ| © Nexperia B.V. 2017. All rights reserved BUK7610-55AL_2 **Product data sheet** **Rev. 02 — 9 January 2008** **5 of 13** **BUK7610-55AL** **Nexperia** ## **N-channel TrenchMOS standard level FET** |**Table 6.**|**Characteristics**_…continued_|**Characteristics**_…continued_||||| |---|---|---|---|---|---|---| |**Symbol**|**Parameter**|**Conditions**|**Min**|**Typ**|**Max**|**Unit**| |**Source-drain diode**||||||| |VSD|source-drain voltage|IS= 25 A; VGS= 0 V; Tj= 25°C;|-|0.85|1.2|V| |||seeFigure 16||||| |trr|reverse recovery time|IS= 20 A; dIS/dt = -100 A/μs;|-|73|-|ns| |||VGS= 0 V; VDS= 30 V; Tj= 25°C||||| |Qr|recovered charge|IS= 20 A; dIS/dt = -100 A/μs;|-|430|-|nC| |||VGS= 0 V; VDS= 30 V; Tj= 25°C||||| |**Dynamic**|**characteristics**|||||| |QG(tot)|total gate charge|ID= 25 A; VDS= 44 V;|-|124|-|nC| |||VGS= 10 V; Tj= 25°C;||||| |||seeFigure 14||||| |QGS|gate-source charge|ID= 25 A; VDS= 44 V;|-|22|-|nC| |||VGS= 10 V; Tj= 25°C;||||| |||seeFigure 14||||| |QGD|gate-drain charge|ID= 25 A; VDS= 44 V;|-|50|-|nC| |||VGS= 10 V; Tj= 25°C;||||| |||seeFigure 14||||| |VGS(pl)|gate-source plateau|ID= 25 A; VDS= 44 V; Tj= 25°C;|-|5|-|V| ||voltage|seeFigure 14||||| |Ciss|input capacitance|VGS= 0 V; VDS= 25 V;|-|4710|6280|pF| |||f = 1 MHz; Tj= 25°C;||||| |||see Figure 15||||| |Coss|output capacitance|VGS= 0 V; VDS= 25 V;|-|980|1180|pF| |||f = 1 MHz; Tj= 25°C;||||| |||see Figure 15||||| |Crss|reverse transfer|VGS= 0 V; VDS= 25 V;|-|560|770|pF| ||capacitance|f = 1 MHz; Tj= 25°C;||||| |||see Figure 15||||| |td(on)|turn-on delay time|VDS= 30 V; RL= 1.2Ω;|-|33|-|ns| |||VGS= 10 V; RG(ext)= 10Ω;||||| |||Tj= 25°C||||| |tr|rise time|VDS= 30 V; RL= 1.2Ω;|-|117|-|ns| |||VGS= 10 V; RG(ext)= 10Ω;||||| |||Tj= 25°C||||| |td(off)|turn-off delay time|VDS= 30 V; RL= 1.2Ω;|-|132|-|ns| |||VGS= 10 V; RG(ext)= 10Ω;||||| |||Tj= 25°C||||| |tf|fall time|VDS= 30 V; RL= 1.2Ω;|-|95|-|ns| |||VGS= 10 V; RG(ext)= 10Ω;||||| |||Tj= 25°C||||| |LD|internal drain|from upper edge of drain|-|2.5|-|nH| ||inductance|mounting base to center of die;||||| |||Tj= 25°C||||| |LS|internal source|from source lead to source bond|-|7.5|-|nH| ||inductance|pad; Tj= 25°C||||| © Nexperia B.V. 2017. All rights reserved BUK7610-55AL_2 **Product data sheet** **Rev. 02 — 9 January 2008** **6 of 13** **BUK7610-55AL** **Nexperia** ## **N-channel TrenchMOS standard level FET** **==> picture [497 x 554] intentionally omitted <==** **----- Start of picture text -----**<br> 003aaa729 003aaa731<br>400 20<br>7 8 9 10<br>ID RDSon<br> (A) 20 (mΩ)<br>18<br>300 15<br>16<br>14<br>12 VGS (V) = 10<br>9.5<br>200 9 10<br>8.5 VGS (V) = 20<br>8<br>7.5<br>7<br>100 5<br>6.5<br>6<br>5.5<br>5<br>4.5<br>0 0<br>0 2 4 6 8 10 0 100 200 300 400<br>VDS (V) ID (A)<br>T = 25 °C T = 25 °C<br> j j<br>Fig 6. Output characteristics: drain current as a Fig 7. Drain-source on-state resistance as a function<br>function of drain-source voltage; typical values of drain current; typical values<br>003aaa732 003aaa733<br>40 150<br>gfs<br> (S) ID<br>(A)<br>35<br>100<br>30<br>50<br>25<br>Tj = 175 °C Tj = 25 °C<br>20 0<br>0 20 40 60 ID (A) 80 0 2 4 6 8 VGS (V)10<br>T j = 25 °C ; VDS = 25 V VDS = 25 V<br>Fig 8. Forward transconductance as a function of Fig 9. Transfer characteristics: drain current as a<br>drain current; typical values function of gate-source voltage; typical values<br>**----- End of picture text -----**<br> © Nexperia B.V. 2017. All rights reserved BUK7610-55AL_2 **Product data sheet** **Rev. 02 — 9 January 2008** **7 of 13** **BUK7610-55AL** **Nexperia** ## **N-channel TrenchMOS standard level FET** **==> picture [233 x 214] intentionally omitted <==** **----- Start of picture text -----**<br> 03aa32<br>5<br>VGS(th)GS(th)<br>(V)<br>4<br>max<br>3<br>typ<br>2<br>min<br>1<br>0<br>−6060 0 60 120 180<br>Tj (°C)j (°C) (°C)°C)C)<br>IDD = 1 mA ; VDSDS = VGSGS<br>**----- End of picture text -----**<br> **==> picture [497 x 497] intentionally omitted <==** **----- Start of picture text -----**<br> 03aa32 03aa35<br>5 10 [−][1]<br>VGS(th)GS(th) ID<br>(V) (A)<br>4 10 [−][2] min typ max<br>max<br>3 10 [−][3]<br>typ<br>2 min 10 [−][4]<br>1 10 [−][5]<br>0 10 [−][6]<br>−6060 0 60 120 180 0 2 4 6<br>Tj (°C)j (°C) (°C)°C)C) VGS (V)<br>IDD = 1 mA ; VDSDS = VGSGS T j = 25 °C ; VDS = VGS<br>Fig 10. Gate-source threshold voltage as a function of Fig 11. Sub-threshold drain current as a function of<br>junction temperature gate-source voltage<br>003aaa730 03ne89<br>18 2<br>RDSon a<br>(mΩ)<br>1.5<br>14<br>1<br>10<br>0.5<br>6 0<br>5 10 15 VGS (V) 20 -60 0 60 120 Tj (°C) 180<br>T j = 25 °C ; ID = 25 A a = RDSon<br>RDSon (25 °C )<br>**----- End of picture text -----**<br> **Fig 12. Drain-source on-state resistance as a function of gate-source voltage; typical values** **Fig 13. Normalized drain-source on-state resistance factor as a function of junction temperature** © Nexperia B.V. 2017. All rights reserved BUK7610-55AL_2 **Product data sheet** **Rev. 02 — 9 January 2008** **8 of 13** **BUK7610-55AL** **Nexperia** ## **N-channel TrenchMOS standard level FET** **==> picture [481 x 215] intentionally omitted <==** **----- Start of picture text -----**<br> 003aaa735 003aaa738<br>10 8000<br>VGS C<br> (V)<br> (pF) Ciss<br>8<br>6000<br>VDS = 14 V<br>6 VDS = 44 V<br>4000 Coss<br>4<br>C<br>rss<br>2000<br>2<br>0 0<br>0 50 100 150 10 [-1] 1 10 10 [2]<br>QG (nC) VDS (V)<br>T j = 25 °C ; ID = 25 A VGS = 0 V ; f = 1 M H z<br>**----- End of picture text -----**<br> **==> picture [497 x 258] intentionally omitted <==** **----- Start of picture text -----**<br> Fig 14. Gate-source voltage as a function of gate Fig 15. Input, output and reverse transfer capacitances<br>charge; typical values as a function of drain-source voltage; typical<br>values<br>003aaa736<br>150<br>IS<br>(A)<br>100<br>Tj = 25 °C<br>50<br>Tj = 175 °C<br>0<br>0.0 0.3 0.6 0.9 1.2<br>VSD (V)<br>VGS = 0 V<br>**----- End of picture text -----**<br> **Fig 16. Source current as a function of source-drain voltage; typical values** © Nexperia B.V. 2017. All rights reserved BUK7610-55AL_2 **Product data sheet** **Rev. 02 — 9 January 2008** **9 of 13** **BUK7610-55AL** **Nexperia** **N-channel TrenchMOS standard level FET** ## **7. Package outline** **Plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped)** **SOT404** **==> picture [479 x 560] intentionally omitted <==** **----- Start of picture text -----**<br> A<br>E A1<br>D1 mounting<br>base<br>D<br>HD<br>2<br>Lp<br>1 3<br>b c<br>e e Q<br>0 2.5 5 mm<br>scale<br>DIMENSIONS (mm are the original dimensions)<br>D<br>UNIT A A1 b c max. D1 E e Lp HD Q<br>mm 4.50 1.40 0.85 0.64 11 1.60 10.30 2.54 2.90 15.80 2.60<br>4.10 1.27 0.60 0.46 1.20 9.70 2.10 14.80 2.20<br>OUTLINE REFERENCES EUROPEAN<br>ISSUE DATE<br>VERSION IEC JEDEC JEITA PROJECTION<br>05-02-11<br> SOT404<br>06-03-16<br>**----- End of picture text -----**<br> **Fig 17. Package outline SOT404 (D2PAK)** © Nexperia B.V. 2017. All rights reserved BUK7610-55AL_2 **Product data sheet** **Rev. 02 — 9 January 2008** **10 of 13** **BUK7610-55AL** **Nexperia** **N-channel TrenchMOS standard level FET** ## **8. Revision history** |**Table 7.**<br>**Revision history**|**Table 7.**<br>**Revision history**|| |---|---|---| |**Document ID**|**Release date**<br>**Data sheet status**<br>**Change notice**|**Supersedes**| |BUK7610-55AL_2|20080109<br>Product data sheet<br>-|BUK75_7610_55AL_1| |Modifications:|**•** The format of this data sheet has been redesigned to comply|with the new identity| ||guidelines of NXP Semiconductors.|| ||**•** Legal texts have been adapted to the new company name where appropriate.|| ||**•** Typical thermal resistance (j-mb) figure added inTable 5<br>.|| |BUK75_7610_55AL_1|20041022<br>Product data sheet<br>-|-| © Nexperia B.V. 2017. All rights reserved BUK7610-55AL_2 **Product data sheet** **Rev. 02 — 9 January 2008** **11 of 13** **BUK7610-55AL** **Nexperia** **N-channel TrenchMOS standard level FET** ## **9. Legal information** ## **9.1 Data sheet status** |**Document statu**~~**s**~~**[1]**<br>**[2]**|**Product status[3]**|**Definition**| |---|---|---| |Objective [short] data sheet|Development|This document contains data from the objective specification for product development.| |Preliminary [short] data sheet|Qualification|This document contains data from the preliminary specification.| |Product [short] data sheet|Production|This document contains the product specification.| [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nexperia.com. ## **9.2 Definitions** **Draft —** The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. Nexperia does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. **Short data sheet —** A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local Nexperia sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. ## **9.3 Disclaimers** **General —** Information in this document is believed to be accurate and reliable. However, Nexperia does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. **Right to make changes —** Nexperia reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. **Suitability for use —** Nexperia products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of a Nexperia product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Nexperia accepts no liability for inclusion and/or use of Nexperia products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. **Applications —** Applications that are described herein for any of these products are for illustrative purposes only. Nexperia makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. **Limiting values —** Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. **Terms and conditions of sale —** Nexperia products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nexperia.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by Nexperia. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. **No offer to sell or license —** Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. ## **9.4 Trademarks** Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. ## **10. Contact information** For additional information, please visit: **http://www.nexperia.com** For sales office addresses, send an email to: **salesaddresses@nexperia.com** © Nexperia B.V. 2017. All rights reserved BUK7610-55AL_2 **Product data sheet** **Rev. 02 — 9 January 2008** **12 of 13** **BUK7610-55AL** **Nexperia** **N-channel TrenchMOS standard level FET** ## **11. Contents** |**1**|**Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1**| |---|---| |1.1|General description . . . . . . . . . . . . . . . . . . . . . 1| |1.2|Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| |1.3|Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| |1.4|Quick reference data . . . . . . . . . . . . . . . . . . . . 1| |**2**|**Pinning information. . . . . . . . . . . . . . . . . . . . . . 2**| |**3**|**Ordering information. . . . . . . . . . . . . . . . . . . . . 2**| |**4**|**Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2**| |**5**|**Thermal characteristics . . . . . . . . . . . . . . . . . . 4**| |**6**|**Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5**| |**7**|**Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10**| |**8**|**Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11**| |**9**|**Legal information. . . . . . . . . . . . . . . . . . . . . . . 12**| |9.1|Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12| |9.2|Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12| |9.3|Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12| |9.4|Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12| |**10**|**Contact information. . . . . . . . . . . . . . . . . . . . . 12**| |**11**|**Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13**| > © **Nexperia B.V. 2017. All rights reserved** For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com **Date of release: 09 January 2008**
Updated at February 9, 2023
Nexperia is a dedicated global leader in discretes, logic, and MOSFET devices. Built on over half a century of semiconductor expertise and operating independently since 2017, the company produces consistently reliable components at an exceptional volume of 85 billion units annually. With its own manufacturing facilities, Nexperia delivers industry-leading small packages that combine power and thermal efficiency with best-in-class quality, meeting the rigorous standards of the automotive sector. Our extensive Nexperia portfolio is heavily focused on discrete semiconductors, providing engineers with a robust selection of core building blocks. This includes a comprehensive range of diodes and rectifiers, featuring a vast selection of Zener single diodes and Schottky diodes designed for precise voltage regulation and efficient power routing. Additionally, we offer an expansive array of bipolar transistors and single MOSFETs tailored for reliable switching and amplification in demanding applications. Beyond these primary offerings, the lineup extends into specialized circuit protection and passive components. This includes transient voltage suppressor (TVS) diodes, Zener array diodes, and small signal diodes, alongside dual MOSFETs and fast recovery rectifiers. For comprehensive design needs, the selection also encompasses integrated passive filters, common mode chokes, and precision timers and oscillators, ensuring a complete solution for high-performance electronic systems.
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Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
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