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BUK7607-55B,118
Power MOSFET, N Channel, 55 V, 75 A, 0.0058 ohm, TO-263 (D2PAK), Surface Mount
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- Manufacturer: NEXPERIA
- Product type: Single MOSFETs
- No. of Pins: 3Pins
- Channel Type: N Channel
- Qualification: AEC-Q101
- Power Dissipation: 203W
- Transistor Mounting: Surface Mount
- Transistor Polarity: N Channel
- Power Dissipation Pd: 203W
- Rds(on) Test Voltage: 10V
- On Resistance Rds(on): 0.0058ohm
- Transistor Case Style: TO-263 (D2PAK)
- Drain Source Voltage Vds: 55V
- Operating Temperature Max: 175°C
- Continuous Drain Current Id: 75A
- Drain Source On State Resistance: 0.0058ohm
- Automotive Qualification Standard: AEC-Q101
- Gate Source Threshold Voltage Max: 3V
| Delivery and price | |
|---|---|
| Units per pack | 100 |
| Price | 0.879 € |
| Current stock | 200+ |
| Lead time | 7 days |
Datasheet
## **BUK7607-55B**
## **N-channel TrenchMOS standard level FET**
**Rev. 2 — 26 July 2011**
## **Product data sheet**
## **1. Product profile**
## **1.1 General description**
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
## **1.2 Features and benefits**
- Low conduction losses due to low on-state resistance
- Q101 compliant
- Suitable for standard level gate drive sources
- Suitable for thermally demanding environments due to 175 °C rating
## **1.3 Applications**
- 12 V and 24 V loads
- Automotive systems
- General purpose power switching
- Motors, lamps and solenoids
## **1.4 Quick reference data**
|**Table 1.**|**Quick reference data**||||||||
|---|---|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Conditions**|||**Min**|**Typ**|**Max**|**Unit**|
|VDS|drain-source voltage|Tj≥25 °C; Tj≤175 °C|||-|-|55|V|
|ID|drain current|VGS= 10 V; Tmb= 25 °C;||[1]|-|-|75|A|
|||see Figure 1<br>;see Figure 3|Figure 3||||||
||||||||||
|Ptot|total power dissipation|Tmb= 25 °C; see Figure 2|||-|-|203|W|
||||||||||
|**Static characteristics**|||||||||
|RDSon|drain-source on-state|VGS= 10 V; ID= 25 A;|||-|5.8|7.1|mΩ|
||resistance|Tj= 25 °C; see Figure 11<br>;|||||||
|||seeFigure 12|||||||
||||||||||
|**Avalanche ruggedness**|||||||||
|EDS(AL)S|non-repetitive|ID= 75 A; Vsup≤55 V;|||-|-|351|mJ|
||drain-source|RGS= 50 Ω; VGS= 10 V;|= 10 V;||||||
||avalanche energy|Tj(init)= 25 °C; unclamped|||||||
|**Dynamic characteristics**|||||||||
|QGD|gate-drain charge|VGS= 10 V; ID= 25 A;|||-|17|-|nC|
|||VDS= 44 V; Tj= 25 °C;|||||||
|||seeFigure 13|||||||
- [1] Continuous current is limited by package.
**BUK7607-55B**
**Nexperia**
**N-channel TrenchMOS standard level FET**
## **2. Pinning information**
## **Table 2. Pinning information**
|**Pin**|**Symbol**|**Description**|**Simplified outline**|**Simplified outline**|**Simplified outline**|**Simplified outline**|**Simplified outline**|**Simplified outline**||**Graphic symbol**|||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|1<br>2|G<br>D|gate<br>drain[1]|||mb|||||||D|||
||||||||||||||||
|3|S|source|||||||||||||
|||||||||||G|||||
|mb|D|mounting base;|||||||||||||
|||connected to drain||1|2|||3||_mbb076_||S|||
||||**SOT404**|||**(D2PAK)**|||||||||
[1] It is not possible to make connection to pin 2.
## **3. Ordering information**
## **Table 3. Ordering information**
|**Type number**|**Package**|
|---|---|
||**Name**<br>**Description**<br>**Version**|
|BUK7607-55B|D2PAK<br>plastic single-ended surface-mounted package (D2PAK); 3 leads<br>(one lead cropped)<br>SOT404|
© Nexperia B.V. 2017. All rights reserved
All information provided in this document is subject to legal disclaimers.
BUK7607-55B **Product data sheet**
**Rev. 2 — 26 July 2011**
**2 of 14**
**BUK7607-55B**
**Nexperia**
**N-channel TrenchMOS standard level FET**
## **4. Limiting values**
## **Table 4. Limiting values**
_In accordance with the Absolute Maximum Rating System (IEC 60134)._
|**Symbol**<br>**Parameter**|**Conditions**|**Min**<br>**Max**<br>**Unit**|
|---|---|---|
|VDS<br>drain-source voltage|Tj≥25 °C; Tj≤175 °C|-<br>55<br>V|
|VDGR<br>drain-gate voltage|RGS= 20 kΩ|-<br>55<br>V|
|VGS<br>gate-source voltage||-20<br>20<br>V|
|ID<br>drain current|Tmb= 25 °C; VGS= 10 V; seeFigure 1<br>;<br>seeFigure 3|[1]<br>-<br>75<br>A|
||Tmb= 100 °C; VGS= 10 V; seeFigure 1|[1]<br>-<br>75<br>A|
||Tmb= 25 °C; VGS= 10 V; seeFigure 1<br>;<br>seeFigure 3|[2]<br>-<br>119<br>A|
|IDM<br>peak drain current|Tmb= 25 °C; pulsed; tp≤10 µs;<br>seeFigure 3|-<br>478<br>A|
|Ptot<br>total power dissipation|Tmb= 25 °C; see Figure 2|-<br>203<br>W|
|Tstg<br>storage temperature||-55<br>175<br>°C|
|Tj<br>junction temperature||-55<br>175<br>°C|
|**Source-drain diode**|||
|IS<br>source current|Tmb= 25 °C|[2]<br>-<br>119<br>A|
|||[1]<br>-<br>75<br>A|
|ISM<br>peak source current|pulsed; tp≤10 µs; Tmb= 25 °C|-<br>478<br>A|
|**Avalanche ruggedness**|||
|EDS(AL)S<br>non-repetitive drain-source<br>avalanche energy|ID= 75 A; Vsup≤55 V; RGS= 50 Ω;<br>VGS= 10 V; Tj(init)= 25 °C; unclamped|-<br>351<br>mJ|
[1] Continuous current is limited by package.
[2] Current is limited by power dissipation chip rating.
All information provided in this document is subject to legal disclaimers.
BUK7607-55B **Product data sheet**
© Nexperia B.V. 2017. All rights reserved
**Rev. 2 — 26 July 2011**
**3 of 14**
**BUK7607-55B**
**Nexperia**
## **N-channel TrenchMOS standard level FET**
**==> picture [454 x 451] intentionally omitted <==**
**----- Start of picture text -----**<br>
03nn68 03na19<br>120 120<br>ID Pder<br>NELaN PE LEE EL<br>(A) (%)<br>80 80<br>BERXGEEE (1) EXUREEEE<br>PPP PLING LEE<br>40 ELENLEELA\ 40 PTLSaaeaNGe LING\ LL<br>0 LEELA 0 PEEPLES<br>0 50 100 150 200 0 50 100 150 200<br>Tmb ( ° C) Tmb ( ° C)<br>Ves = 10V Be pote 100%<br>Fig 1. Normalized continuous drain current as a Fig 2. Normalized total power dissipation as a<br>function of mounting base temperature function of mounting base temperature<br>03nn66<br> 10 [3]<br>tp = 10 μ s<br>ID Limit RDSon = VDS / ID<br>(A)<br>ii eet SSE<br> 10 [2]<br>ESSERE (1) SCP 100 μ s<br>—— SS SS a<br>es eeDS<br>ee 1 ms<br> 10 pt tSSEE 10 ms L<br>ON<br>PoC DC RN<br>100 ms<br>Sd<br> 1 FE EE LTTE ELE NEL<br>10 [-1] 1 10 VDS (V) 10 [2]<br>**----- End of picture text -----**<br>
**Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage**
All information provided in this document is subject to legal disclaimers.
BUK7607-55B **Product data sheet**
© Nexperia B.V. 2017. All rights reserved
**Rev. 2 — 26 July 2011**
**4 of 14**
**BUK7607-55B**
**Nexperia**
**N-channel TrenchMOS standard level FET**
## **5. Thermal characteristics**
## **Table 5. Thermal characteristics**
**==> picture [497 x 305] intentionally omitted <==**
**----- Start of picture text -----**<br>
Symbol Parameter Conditions Min Typ Max Unit<br>Rth(j-mb) thermal resistance from see Figure 4 - - 0.74 K/W<br>junction to mounting base<br>Rth(j-a) thermal resistance from minimum footprint; mounted on - 50 - K/W<br>junction to ambient a printed-circuit board<br>03nn67<br> 1<br>δ = 0.5<br>Zth(j-mb)<br> (K/W)<br>0.2<br>10 [-1] 0.1<br>0.05<br>0.02<br>10 [-2] P δ = tp<br>T<br>single shot<br>tp t<br>T<br>10 [-3]<br>10 [-6] 10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] tp (s) 1<br>Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration<br>**----- End of picture text -----**<br>
All information provided in this document is subject to legal disclaimers.
BUK7607-55B **Product data sheet**
© Nexperia B.V. 2017. All rights reserved
**Rev. 2 — 26 July 2011**
**5 of 14**
**BUK7607-55B**
**Nexperia**
**N-channel TrenchMOS standard level FET**
## **6. Characteristics**
|**Table 6.**<br>**Characteristics**|||
|---|---|---|
|**Symbol**<br>**Parameter**|**Conditions**|**Min**<br>**Typ**<br>**Max**<br>**Unit**|
|**Static characteristics**|||
|V(BR)DSS<br>drain-source<br>breakdown voltage|ID= 0.25 mA; VGS= 0 V; Tj= 25 °C|55<br>-<br>-<br>V|
||ID= 0.25 mA; VGS= 0 V; Tj= -55 °C|50<br>-<br>-<br>V|
|VGS(th)<br>gate-source threshold<br>voltage|ID= 1 mA; VDS= VGS; Tj= 25 °C;<br>seeFigure 10|2<br>3<br>4<br>V|
||ID= 1 mA; VDS= VGS; Tj= 175 °C;<br>seeFigure 10|1<br>-<br>-<br>V|
||ID= 1 mA; VDS= VGS; Tj= -55 °C;<br>seeFigure 10|-<br>-<br>4.4<br>V|
|IDSS<br>drain leakage current|VDS= 55 V; VGS= 0 V; Tj= 25 °C|-<br>0.02<br>1<br>µA|
||VDS= 55 V; VGS= 0 V; Tj= 175 °C|-<br>-<br>500<br>µA|
|IGSS<br>gate leakage current|VGS= 20 V; VDS= 0 V; Tj= 25 °C|-<br>2<br>100<br>nA|
||VGS= -20 V; VDS= 0 V; Tj= 25 °C|-<br>2<br>100<br>nA|
|RDSon<br>drain-source on-state<br>resistance|VGS= 10 V; ID= 25 A; Tj= 175 °C;<br>seeFigure 11<br>;see Figure 12|-<br>-<br>14.2<br>mΩ|
||VGS= 10 V; ID= 25 A; Tj= 25 °C;<br>seeFigure 11<br>;see Figure 12|-<br>5.8<br>7.1<br>mΩ|
|**Dynamic characteristics**|||
|QG(tot)<br>total gate charge|ID= 25 A; VDS= 44 V; VGS= 10 V;<br>Tj= 25 °C; seeFigure 13|-<br>53<br>-<br>nC|
|QGS<br>gate-source charge||-<br>12<br>-<br>nC|
|QGD<br>gate-drain charge||-<br>17<br>-<br>nC|
|Ciss<br>input capacitance|VGS= 0 V; VDS= 25 V; f = 1 MHz;<br>Tj= 25 °C; seeFigure 14|-<br>2820<br>3760<br>pF|
|Coss<br>output capacitance||-<br>554<br>665<br>pF|
|Crss<br>reverse transfer<br>capacitance||-<br>200<br>274<br>pF|
|td(on)<br>turn-on delay time|VDS= 30 V; RL= 1.2 Ω; VGS= 10 V;<br>RG(ext)= 10 Ω; Tj= 25 °C|-<br>24<br>-<br>ns|
|tr<br>rise time||-<br>52<br>-<br>ns|
|td(off)<br>turn-off delay time||-<br>77<br>-<br>ns|
|tf<br>fall time||-<br>41<br>-<br>ns|
|LD<br>internal drain<br>inductance|from drain lead 6 mm from package to<br>center of die; Tj= 25 °C|-<br>4.5<br>-<br>nH|
||from upper edge of drain mounting base<br>to centre of die; Tj= 25 °C|-<br>2.5<br>-<br>nH|
|LS<br>internal source<br>inductance|from source lead to source bond pad;<br>Tj= 25 °C|-<br>7.5<br>-<br>nH|
|**Source-drain diode**|||
|VSD<br>source-drain voltage|IS= 40 A; VGS= 0 V; Tj= 25 °C;<br>seeFigure 15|-<br>0.85<br>1.2<br>V|
|trr<br>reverse recovery time|IS= 20 A; dIS/dt = -100 A/µs;<br>VGS= -10 V; VDS= 30 V; Tj= 25 °C|-<br>62<br>-<br>ns|
|Qr<br>recovered charge||-<br>60<br>-<br>nC|
All information provided in this document is subject to legal disclaimers.
© Nexperia B.V. 2017. All rights reserved
BUK7607-55B **Product data sheet**
**Rev. 2 — 26 July 2011**
**6 of 14**
**BUK7607-55B**
**Nexperia**
## **N-channel TrenchMOS standard level FET**
**==> picture [225 x 500] intentionally omitted <==**
**----- Start of picture text -----**<br>
03nn63<br>300<br>9<br>ID 10 VGS = 8.5 (V)<br>(A) nv/Zaeeee<br>20<br>8<br>200<br>qe 7.5<br>7<br>aa<br>6.5<br>100<br>6<br>| meenens<br>5.5<br>| Ae<br>5<br>4.5<br>0 =<br>0 2 4 6 8 10<br>VDS (V)<br>T,; =25 °C; ty =300ps<br>Fig 5. Output characteristics: drain current as a<br>function of drain-source voltage; typical values<br>03aa35<br>10 [−] [1]<br>ID<br>(A)<br>min typ max<br>10 [−] [2]<br>10 [−] [3]<br>===<br>10 [−] [4]<br>fp hf<br>10 [−] [5]<br>Sa<br>10 [−] [6] = FEE<br>0 2 4 6<br>VGS (V)<br>Fig 7. Sub-threshold drain current as a function of<br>gate-source voltage<br>**----- End of picture text -----**<br>
**Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values**
**==> picture [222 x 500] intentionally omitted <==**
**----- Start of picture text -----**<br>
03nn62<br>25<br>RDSon<br>(m Ω )<br>20 pf ft fy<br>15<br>Le<br>10<br>SFE<br>5 —<br>0 SSE=<br>5 10 15 VGS (V) 20<br>T; =25°CjIp =25A<br>Fig 6. Drain-source on-state resistance as a function<br>of gate-source voltage; typical values<br>03nn60<br>60<br>gfs<br>(S)<br>40 EZennnne<br>20 ATTTT<br>HEEL TL<br>0 TEEPE EL<br>0 25 50 75 ID (A) 100<br>Fig 8. Forward transconductance as a function of<br>drain current; typical values<br>**----- End of picture text -----**<br>
**Fig 6. Drain-source on-state resistance as a function of gate-source voltage; typical values**
All information provided in this document is subject to legal disclaimers.
BUK7607-55B **Product data sheet**
© Nexperia B.V. 2017. All rights reserved
**Rev. 2 — 26 July 2011**
**7 of 14**
**BUK7607-55B**
**Nexperia**
## **N-channel TrenchMOS standard level FET**
**==> picture [435 x 442] intentionally omitted <==**
**----- Start of picture text -----**<br>
03nn61 03aa32<br>100 5<br>ID VGS(th)<br>(A) et A (V) P| { {| | | tt<br>4<br>75 Seen — max<br>Saar ene<br> ee 3 ET<br>typ<br>50<br>HE 2 min N<br>=—aec<br>25 pe| | BESSa<br>Tj = 175 ° C 1<br>T j = 25 ° C<br>0 pe“TLE i 0 FEESssTEEPE<br>0 2 4 6 8 − 60 0 60 120 180<br>VGS (V) Tj ( ° C)<br>Vos = 25V Tp =1MA;V55 = Ves<br>Transfer characteristics: drain current as a Fig 10. Gate-source threshold voltage as a function of<br>function of gate-source voltage; typical values junction temperature<br>03nn64 03ne89<br>25 2<br>RDSon<br>(m Ω ) V GS = 6 (V) 6.5 a<br>20 PT Pert PT ie Tey yY<br>7 7.5 1.5<br>Hoi 8 jit tte<br>PPT,<br>15 9 A<br>arr 1 EY<br>10<br>10 Zeermaa as A<br>0.5<br>5 meee<br>SSE ttt ett<br>0 ee 0 PTET EET<br>0 100 200 ID (A) 300 -60 0 60 120 Tj ( ° C) 180<br>**----- End of picture text -----**<br>
**Fig 10. Gate-source threshold voltage as a function of junction temperature**
**Fig 9. Transfer characteristics: drain current as a function of gate-source voltage; typical values**
**Fig 11. Drain-source on-state resistance as a function of drain current; typical values**
**Fig 12. Normalized drain-source on-state resistance factor as a function of junction temperature**
All information provided in this document is subject to legal disclaimers. **Rev. 2 — 26 July 2011**
BUK7607-55B **Product data sheet**
© Nexperia B.V. 2017. All rights reserved
**8 of 14**
**BUK7607-55B**
**Nexperia**
**N-channel TrenchMOS standard level FET**
**==> picture [427 x 188] intentionally omitted <==**
**----- Start of picture text -----**<br>
03nn59 03nn65<br>10 4000<br>VGS C CISS<br>(V) nyse VDD = 14 (V) (pF) So TC<br>8<br>3000<br>fl W ee<br>6 a ff VDD = 44 (V) CTSNET C OSS<br>7a 2000 a a a a<br>4 Se INGE<br>1000 CRSS<br>2 fo HHL NET<br>FIFE INN<br>0 PE 0 IMCCUTIE TTIN TS<br>0 20 40 QG (nC) 60 10 [-2] 10 [-1] CHUM 1 FE 10 VDS (V) 10 [2]<br>**----- End of picture text -----**<br>
**Fig 13. Gate-source voltage as a function of gate charge; typical values**
**Fig 14. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values**
**==> picture [21 x 6] intentionally omitted <==**
**----- Start of picture text -----**<br>
03nn58<br>**----- End of picture text -----**<br>
**==> picture [182 x 176] intentionally omitted <==**
**----- Start of picture text -----**<br>
100<br>IS yp<br>(A)75 eoee<br>50<br>py Tj = 175 ° C<br>ee oi<br>25 a i<br>Tj = 25 ° C<br>pp<br>0 sa<br>0.0 0.5 1.0 VSD (V) 1.5<br>**----- End of picture text -----**<br>
**Fig 15. Source current as a function of source-drain voltage; typical values**
All information provided in this document is subject to legal disclaimers.
BUK7607-55B **Product data sheet**
© Nexperia B.V. 2017. All rights reserved
**Rev. 2 — 26 July 2011**
**9 of 14**
**BUK7607-55B**
**Nexperia**
**N-channel TrenchMOS standard level FET**
## **7. Package outline**
**Plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped)**
## **SOT404**
**==> picture [478 x 560] intentionally omitted <==**
**----- Start of picture text -----**<br>
A<br>E A1<br>D1 mounting<br>base<br>D<br>HD<br>2<br>Lp<br>1 3<br>b c<br>e e Q<br>0 2.5 5 mm<br>scale<br>DIMENSIONS (mm are the original dimensions)<br>D<br>UNIT A A1 b c max. D1 E e Lp HD Q<br>mm 4.50 1.40 0.85 0.64 11 1.60 10.30 2.54 2.90 15.80 2.60<br>4.10 1.27 0.60 0.46 1.20 9.70 2.10 14.80 2.20<br>OUTLINE REFERENCES EUROPEAN<br>ISSUE DATE<br>VERSION IEC JEDEC JEITA PROJECTION<br>05-02-11<br> SOT404<br>06-03-16<br>**----- End of picture text -----**<br>
## **Fig 16. Package outline SOT404 (D2PAK)**
All information provided in this document is subject to legal disclaimers.
BUK7607-55B **Product data sheet**
© Nexperia B.V. 2017. All rights reserved
**Rev. 2 — 26 July 2011**
**10 of 14**
**BUK7607-55B**
**Nexperia**
**N-channel TrenchMOS standard level FET**
## **8. Revision history**
|**Table 7.**<br>**Revision**|**history**||||
|---|---|---|---|---|
|**Document ID**|**Release date**<br>**Data sheet status**||**Change notice**|**Supersedes**|
|BUK7607-55B v.2|20110726<br>Product data sheet||-|BUK75_7607_55B_1|
|Modifications:|**•**|Type number BUK7607-55B separated from|data sheet BUK75_7607_55B_1.||
||**•**|The format of this data sheet has been redesigned to comply with the||new identity guidelines|
|||of NXP Semiconductors.|||
||**•**|Legal texts have been adapted to the new company name where appropriate.|||
|BUK75_7607_55B_1|20030515<br>Product data||-|-|
|(9397 750 11235)|||||
All information provided in this document is subject to legal disclaimers.
BUK7607-55B **Product data sheet**
© Nexperia B.V. 2017. All rights reserved
**Rev. 2 — 26 July 2011**
**11 of 14**
**BUK7607-55B**
**Nexperia**
**N-channel TrenchMOS standard level FET**
## **9. Legal information**
## **9.1 Data sheet status**
|**Document status** **[1]**<br> **[2]**|**Product status[3]**|**Definition**|
|---|---|---|
|Objective [short] data sheet|Development|This document contains data from the objective specification for product development.|
|Preliminary [short] data sheet|Qualification|This document contains data from the preliminary specification.|
|Product [short] data sheet|Production|This document contains the product specification.|
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nexperia.com.
## **9.2 Definitions**
**Preview** — The document is a preview version only. The document is still subject to formal approval, which may result in modifications or additions. Nexperia does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information.
**Draft** — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. Nexperia does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information.
**Short data sheet** — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local Nexperia sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
**Product specification** — The information and data provided in a Product data sheet shall define the specification of the product as agreed between Nexperia and its customer, unless Nexperia and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the Nexperia product is deemed to offer functions and qualities beyond those described in the Product data sheet.
## **9.3 Disclaimers**
**Limited warranty and liability** — Information in this document is believed to be accurate and reliable. However, Nexperia does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information.
In no event shall Nexperia be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason whatsoever, Nexperia’s aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the _Terms and conditions of commercial sale_ of Nexperia.
**Right to make changes** — Nexperia reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.
**Suitability for use in automotive applications** — This Nexperia product has been qualified for use in automotive applications. The product is not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of a Nexperia product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Nexperia accepts no liability for inclusion and/or use of Nexperia products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk.
**Quick reference data** — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.
**Applications** — Applications that are described herein for any of these products are for illustrative purposes only. Nexperia makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification.
Customers are responsible for the design and operation of their applications and products using Nexperia products, and Nexperia accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the Nexperia product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products.
Nexperia does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using Nexperia products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). Nexperia does not accept any liability in this respect.
**Limiting values** — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the
All information provided in this document is subject to legal disclaimers.
BUK7607-55B
© Nexperia B.V. 2017. All rights reserved
**Product data sheet**
**Rev. 2 — 26 July 2011**
**12 of 14**
**BUK7607-55B**
**Nexperia**
## **N-channel TrenchMOS standard level FET**
Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device.
**Terms and conditions of commercial sale** — Nexperia
products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nexperia.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. Nexperia hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of Nexperia products by customer.
**Export control** — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities.
## **9.4 Trademarks**
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
**No offer to sell or license** — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.
## **10. Contact information**
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
All information provided in this document is subject to legal disclaimers.
BUK7607-55B **Product data sheet**
© Nexperia B.V. 2017. All rights reserved
**Rev. 2 — 26 July 2011**
**13 of 14**
**BUK7607-55B**
**Nexperia**
**N-channel TrenchMOS standard level FET**
## **11. Contents**
|**11. **|**Contents**|
|---|---|
|**1**|**Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1**|
|1.1|General description . . . . . . . . . . . . . . . . . . . . . .1|
|1.2|Features and benefits. . . . . . . . . . . . . . . . . . . . .1|
|1.3|Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1|
|1.4|Quick reference data . . . . . . . . . . . . . . . . . . . . .1|
|**2**|**Pinning information. . . . . . . . . . . . . . . . . . . . . . .2**|
|**3**|**Ordering information. . . . . . . . . . . . . . . . . . . . . .2**|
|**4**|**Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3**|
|**5**|**Thermal characteristics . . . . . . . . . . . . . . . . . . .5**|
|**6**|**Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .6**|
|**7**|**Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10**|
|**8**|**Revision history. . . . . . . . . . . . . . . . . . . . . . . . .11**|
|**9**|**Legal information. . . . . . . . . . . . . . . . . . . . . . . .12**|
|9.1|Data sheet status . . . . . . . . . . . . . . . . . . . . . . .12|
|9.2|Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .12|
|9.3|Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .12|
|9.4|Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .13|
|**10**|**Contact information. . . . . . . . . . . . . . . . . . . . . .13**|
> © **Nexperia B.V. 2017. All rights reserved**
For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com **Date of release: 26 July 2011**
Updated at February 9, 2023
Nexperia is a dedicated global leader in discretes, logic, and MOSFET devices. Built on over half a century of semiconductor expertise and operating independently since 2017, the company produces consistently reliable components at an exceptional volume of 85 billion units annually. With its own manufacturing facilities, Nexperia delivers industry-leading small packages that combine power and thermal efficiency with best-in-class quality, meeting the rigorous standards of the automotive sector. Our extensive Nexperia portfolio is heavily focused on discrete semiconductors, providing engineers with a robust selection of core building blocks. This includes a comprehensive range of diodes and rectifiers, featuring a vast selection of Zener single diodes and Schottky diodes designed for precise voltage regulation and efficient power routing. Additionally, we offer an expansive array of bipolar transistors and single MOSFETs tailored for reliable switching and amplification in demanding applications. Beyond these primary offerings, the lineup extends into specialized circuit protection and passive components. This includes transient voltage suppressor (TVS) diodes, Zener array diodes, and small signal diodes, alongside dual MOSFETs and fast recovery rectifiers. For comprehensive design needs, the selection also encompasses integrated passive filters, common mode chokes, and precision timers and oscillators, ensuring a complete solution for high-performance electronic systems.
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