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BUF420AW
Bipolar (BJT) Single Transistor, NPN, 450 V, 30 A, 200 W, TO-247, Through Hole
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- Manufacturer: STMICROELECTRONICS
- Product type:
- Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:450V; Transition Frequency ft:-; Power Dissipation Pd:200W; DC Collector Current:30A; DC Current ; Available until stocks are exhausted
- MSL: -
- SVHC: No SVHC (25-Jun-2020)
- No. of Pins: 3Pins
- Product Range: -
- Qualification: -
- Power Dissipation: 200W
- Transistor Mounting: Through Hole
- Transistor Polarity: NPN
- Transition Frequency: -
- Transistor Case Style: TO-247
- DC Current Gain hFE Min: 35hFE
- Operating Temperature Max: 150°C
- Continuous Collector Current: 30A
- Collector Emitter Voltage Max: 450V
| Delivery and price | |
|---|---|
| Units per pack | 250 |
| Price | 7.12 € |
| Current stock | 500+ |
| Lead time | 30 days |
Datasheet
**==> picture [7 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> ®<br>**----- End of picture text -----**<br> ## **BUF420AW** ## HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR - I STMicroelectronics PREFERRED SALESTYPE - I HIGH VOLTAGE CAPABILITY - I VERY HIGH SWITCHING SPEED - I MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION - I LOW BASE-DRIVE REQUIREMENTS ## **APPLICATIONS:** - I SWITCH MODE POWER SUPPLIES I MOTOR CONTROL ## **DESCRIPTION** The BUF420AW is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capacity. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA. The BUF series is designed for use in high-frequency power supplies and motor control applications. **==> picture [45 x 52] intentionally omitted <==** **==> picture [61 x 62] intentionally omitted <==** **----- Start of picture text -----**<br> 3<br>2<br>1<br>**----- End of picture text -----**<br> **TO-247** ## **INTERNAL SCHEMATIC DIAGRAM** **==> picture [73 x 92] intentionally omitted <==** ## **ABSOLUTE MAXIMUM RATINGS** |**Symbol**|**Parameter**|**Value**|**Unit**| |---|---|---|---| |VCEV|Collector-Emitter Voltage(VBE= -1.5V)|1000|V| |VCEO|Collector-Emitter Voltage(IB= 0)|450|V| |VEBO|Emitter-Base Voltage(IC= 0)|7|V| |IC|Collector Current|30|A| |ICM|Collector Peak Current(tp< 5 ms)|60|A| |IB|Base Current|6|A| |IBM|Base Peak Current(tp< 5 ms)|9|A| |Ptot|Total Dissipation at Tc= 25oC|200|W| |Tstg|Storage Temperature|-65 to 150|oC| |Tj|Max. Operating Junction Temperature|150|oC| 1/8 March 2002 **BUF420AW** ## **THERMAL DATA** Rthj-case Thermal Resistance Junction-Case Max 0.63 oC/W ## **ELECTRICAL CHARACTERISTICS** (Tcase = 25[o] C unless otherwise specified) |**ELECTRIC**|**AL CHARACTERISTIC**|**S**(Tcase= 25oC unless otherwise sp|ecified)|||| |---|---|---|---|---|---|---| |**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**| |ICER|Collector Cut-off<br>Current(RBE= 5Ω)|VCE= 1000 V<br>VCE= 1000 V TC= 100oC|||0.2<br>1|mA<br>mA| |ICEV|Collector Cut-off<br>Current (VBE= -1.5V)|VCE= 1000 V<br>VCE= 1000 V TC= 100oC|||0.2<br>1|mA<br>mA| |IEBO|Emitter Cut-off Current<br>(IC= 0)|VEB= 5 V|||1|mA| |VCEO(sus)∗|Collector-Emitter<br>Sustaining Voltage<br> (IB= 0)|IC= 200 mA L = 25 mH|450|||V| |VEBO|Emitter Base Voltage<br>(IC= 0)|IE= 50 mA|7|||V| |VCE(sat)∗|Collector-Emitter<br>Saturation Voltage|IC= 10A IB= 1 A<br>IC= 10 A IB= 1 A TC=100oC<br>IC= 20 A IB= 4 A<br>IC= 20 A IB= 4 A TC=100oC||0.8<br>0.5|2.8<br>2|V<br>V<br>V<br>V| |VBE(sat)∗|Base-Emitter<br>Saturation Voltage|IC= 10A IB= 1 A<br>IC= 10 A IB= 1 A TC=100oC<br>IC= 20 A IB= 4 A<br>IC= 20 A IB= 4 A TC=100oC||0.9<br>1.1|1.5<br>1.5|V<br>V<br>V<br>V| |dic/dt|Rate of rise on-state<br>Collector Current|VCC= 300 V RC= 0 tp= 3µs<br>IB1= 1.5 A TC=25oC<br>IB1= 1.5 A TC=100oC<br>IB1= 6 A TC=100oC|70<br>150|100||A/µs<br>A/µs<br>A/µs| |VCE(3µs)|Collector-Emitter<br>Dynamic Voltage|VCC= 300 V RC= 60Ω<br>IB1= 1.5 A TC=25oC<br>IB1= 1.5 A TC=100oC||2.1|8|V<br>V| |VCE(5µs)|Collector-Emitter<br>Dynamic Voltage|VCC= 300 V RC= 60Ω<br>IB1= 1.5 A TC=25oC<br>IB1= 1.5 A TC=100oC||1.1|4|V<br>V| |ts<br>tf<br>tc|INDUCTIVE LOAD<br>Storage Time<br>Fall Time<br>Cross Over Time|IC= 10 A VCC= 50 V<br>VBB= - 5 V RBB= 0.6Ω<br>Vclamp= 400 V IB1= 1 A<br>L = 0.25 mH||1<br>0.05<br>0.08||µs<br>µs<br>µs| |ts<br>tf<br>tc|INDUCTIVE LOAD<br>Storage Time<br>Fall Time<br>Cross Over Time|IC= 10 A VCC= 50 V<br>VBB= - 5 V RBB= 0.6Ω<br>Vclamp= 400 V IB1= 1 A<br>L = 0.25 mH TC=100oC|||2<br>0.1<br>0.18|µs<br>µs<br>µs| |VCEW|Maximum Collector<br>Emitter Voltage<br>without Snubber|IC= 10 A VCC= 50 V<br>VBB= - 5 V RBB= 0.6Ω<br>IB1= 1 A L = 0.25 mH<br>TC=125oC|500|||V| |ts<br>tf<br>tc|INDUCTIVE LOAD<br>Storage Time<br>Fall Time<br>Cross Over Time|IC= 10 A VCC= 50 V<br>VBB= 0 RBB= 0.15Ω<br>Vclamp= 400 V IB1= 1 A<br>L = 0.25 mH||1.5<br>0.04<br>0.07||µs<br>µs<br>µs| 2/8 **BUF420AW** ## **ELECTRICAL CHARACTERISTICS** (continued) |**ELECTRIC**|**AL CHARACTERISTIC**|**S**(continued)||||| |---|---|---|---|---|---|---| |**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**| |ts<br>tf<br>tc|INDUCTIVE LOAD<br>Storage Time<br>Fall Time<br>Cross Over Time|IC= 10 A VCC= 50 V<br>VBB= 0 RBB= 0.15Ω<br>Vclamp= 400 V IB1= 1 A<br>L = 0.25 mH TC=100oC|||3<br>0.15<br>0.25|µs<br>µs<br>µs| |VCEW|Maximum Collector<br>Emitter Voltage<br>without Snubber|IC= 10 A VCC= 50 V<br>VBB= 0 RBB= 0.15Ω<br>IB1= 1 A L = 0.25 mH<br>TC=125oC|500|||V| |ts<br>tf<br>tc|INDUCTIVE LOAD<br>Storage Time<br>Fall Time<br>Cross Over Time|IC= 20 A VCC= 50 V<br>VBB= -5 V RBB=0.6Ω<br>Vclamp= 400 V IB1= 4 A<br>L = 0.12 mH||2.2<br>0.06<br>0.12||µs<br>µs<br>µs| |ts<br>tf<br>tc|INDUCTIVE LOAD<br>Storage Time<br>Fall Time<br>Cross Over Time|IC= 20 A VCC= 50 V<br>VBB= - 5 V RBB= 0.6Ω<br>Vclamp= 400 V IB1= 4 A<br>L = 0.12 mH TC=125oC|||3.5<br>0.12<br>0.3|µs<br>µs<br>µs| |VCEW|Maximum Collector<br>Emitter Voltage<br>without Snubber|ICWoff= 30 A VCC= 50 V<br>VBB= - 5 V RBB= 0.6Ω<br>L = 0.12 mH IB1= 6 A<br>TC=125oC|400|||V| 3/8 **BUF420AW** DC Current Gain **==> picture [172 x 174] intentionally omitted <==** Collector Emitter Saturation Voltage **==> picture [183 x 174] intentionally omitted <==** Forward Biased Safe Operating Area **==> picture [185 x 174] intentionally omitted <==** ## DC Current Gain **==> picture [172 x 174] intentionally omitted <==** Base Emitter Saturation Voltage **==> picture [182 x 174] intentionally omitted <==** Reverse Biased Safe Operating Area **==> picture [188 x 173] intentionally omitted <==** 4/8 **BUF420AW** Storage Time Versus Pulse Time. **Figure 1:** Inductive Load Switching Test Circuit. **==> picture [108 x 32] intentionally omitted <==** **----- Start of picture text -----**<br> 1) Fast electronic switch<br>2) Non-inductive Resistor<br>3) Fast recovery rectifier<br>**----- End of picture text -----**<br> 5/8 **BUF420AW** Turn-on Switching Test Waveforms. **==> picture [79 x 142] intentionally omitted <==** **==> picture [123 x 131] intentionally omitted <==** Turn-off Switching Test Waveforms (inductive load). **==> picture [135 x 156] intentionally omitted <==** 6/8 **BUF420AW** ## **TO-247 MECHANICAL DATA** |**DIM.**|**mm**|**mm**|**mm**|**inch**|**inch**|**inch**| |---|---|---|---|---|---|---| ||**MIN.**|**TYP.**|**MAX.**|**MIN.**|**TYP.**|**MAX.**| |A|4.7||5.3|0.185||0.209| |D|2.2||2.6|0.087||0.102| |E|0.4||0.8|0.016||0.031| |F|1||1.4|0.039||0.055| |F3|2||2.4|0.079||0.094| |F4|3||3.4|0.118||0.134| |G||10.9|||0.429|| |H|15.3||15.9|0.602||0.626| |L|19.7||20.3|0.776||0.779| |L3|14.2||14.8|0.559||0.582| |L4||34.6|||1.362|| |L5||5.5|||0.217|| |M|2||3|0.079||0.118| **==> picture [250 x 240] intentionally omitted <==** **==> picture [30 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> P025P<br>**----- End of picture text -----**<br> 7/8 **BUF420AW** Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics - © 2002 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. **http://www.st.com** 8/8
Updated at April 27, 2026
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