BU406G

BU406, BU407 

## NPN Power Transistors 

These devices are high voltage, high speed transistors for horizontal deflection output stages of TV’s and CRT’s. 

## **Features** 

- High Voltage 

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- Fast Switching Speed 

- Low Saturation Voltage 

- These Devices are Pb−Free and are RoHS Compliant* 

## **MAXIMUM RATINGS** 

|**MAXIMUM RATINGS**|~~a~~|||
|---|---|---|---|
|**Rating**<br>~~ee~~|**Symbol**<br>~~ee~~<br>~~a~~|**Value**<br>~~ee~~|**Unit**<br>~~ee~~|
|Collector−Emitter Voltage<br>BU406<br>BU407<br>~~ee~~|VCEO<br>~~ee~~<br>~~a~~|200<br>150<br>~~ee~~|Vdc<br>~~ee~~|
|Collector−Emitter Voltage<br>BU406<br>BU407<br>~~ee~~<br>~~p_______|~~|VCEV<br>~~a~~<br>~~ee~~<br>~~p_______|{|~~|400<br>330<br>~~ee~~<br>~~{||~~|Vdc<br>~~ee~~<br>~~|~~|
|Collector−Base Voltage<br>BU406<br>BU407<br>~~p_______|~~|VCBO<br>~~p_______|{|~~|400<br>330<br>~~{||~~|Vdc<br>~~|~~|
|Emitter−Base Voltage<br>~~p_______|~~|VEBO<br>~~p_______|{|~~|6<br>~~{||~~|Vdc<br>~~|~~|
|Collector Current − Continuous<br>− Peak Repetitive<br>~~p_______|~~<br>~~pt~~|IC<br>~~p_______| {|~~<br>~~pt~~|7<br>10<br>~~{| |~~<br>~~pt~~|Adc<br>~~|~~<br>~~pt~~|
|Collector Current − Peak (10 ms)<br>~~pt~~|ICM<br>~~pt~~|15<br>~~pt~~|Adc<br>~~pt~~|
|Base Current|IB|4|Adc|
|Total Device Dissipation @ TC= 25 C<br>Derate above 25°C|PD|60<br>0.48|W<br>W/ C|
|Operating and Storage Junction<br>Temperature Storage|TJ, Tstg|−65 to 150|C|



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

## **THERMAL CHARACTERISTICS** 

|**THERMAL CHARACTERISTICS**||||
|---|---|---|---|
|**Characteristics**<br>~~a~~|**Symbol**<br>~~a~~|**Max**<br>~~a~~|**Unit**<br>~~a~~|
|Thermal Resistance, Junction−to−Case|R JC|2.08|C/W|
|Thermal Resistance, Junction−to−Ambient|R JA|70|C/W|
|Maximum Lead Temperature for Soldering<br>Purposes1/8″from Case for 5 Seconds|TL|260|C|



**NPN SILICON POWER TRANSISTORS 7 AMPERES − 60 WATTS 150 AND 200 VOLTS** 

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SCHEMATIC<br>COLLECTOR<br>2,4<br>1<br>BASE<br>©<br>3<br>EMITTER<br>MARKING<br>DIAGRAM<br>**----- End of picture text -----**<br>


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4<br>TO−220 BU40xG<br>CASE 221A AY   WW<br>STYLE 1<br>1<br>2<br>3 1<br>BU40x = Specific Device Code<br>x = 6 or 7<br>A = Assembly Location<br>Y = Year<br>WW = Work Week<br>G = Pb−Free Package<br>**----- End of picture text -----**<br>


## **ORDERING INFORMATION** 

|**Device**|**Package**|**Shipping**|
|---|---|---|
|BU406G|TO−220AB<br>(Pb−Free)|50 Units / Rail|
|BU407G|TO−220AB<br>(Pb−Free)|50 Units / Rail|



- *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

Publication Order Number: **BU406/D** 

**1** 

© Semiconductor Components Industries, LLC, 2014 **November, 2014 − Rev. 11** 

**BU406, BU407** 

## ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ **ELECTRICAL CHARACTERISTICS** (TC = 25 � C unless otherwise noted) 

|||||||
|---|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**||||||
|Collector−Emitter Sustaining Voltage (Note 1)<br>BU406<br>(IC= 100 mAdc, IB= 0)<br>BU407|VCEO(sus)|200<br>150|−<br>−|−<br>−|Vdc|
|Collector Cutoff Current<br>(VCE= Rated VCEV, VBE= 0)<br>(VCE= Rated VCEO+ 50 Vdc, VBE= 0)<br>(VCE= Rated VCEO+ 50 Vdc, VBE= 0, TC= 150�C)|ICES|−<br>−<br>−|−<br>−<br>−|5<br>0.1<br>1|mAdc|
|Emitter Cutoff Current<br>BU406, BU407<br>(VEB= 6 Vdc, IC= 0)|IEBO|−|−|1|mAdc|
|**ON CHARACTERISTICS**(Note 1)||||||
|Collector−Emitter Saturation Voltage<br>(IC= 5 Adc, IB= 0.5 Adc)|VCE(sat)|−|−|1|Vdc|
|Base−Emitter Saturation Voltage<br>(IC= 5 Adc, IB= 0.5 Adc)|VBE(sat)|−|−|1.2|Vdc|
|Forward Diode Voltage<br>(IEC= 5 Adc) “D” only|VEC|−|−|2|Volts|
|**DYNAMIC CHARACTERISTICS**||||||
|Current−Gain − Bandwidth Product<br>(IC= 0.5 Adc, VCE= 10 Vdc, ftest= 20 MHz)|fT|10|−|−|MHz|
|Output Capacitance<br>(VCB= 10 Vdc, IE= 0, f = 1 MHz)|Cob|−|80|−|pF|
|**SWITCHING CHARACTERISTICS**||||||
|Inductive Load Crossover Time<br>(VCC= 40 Vdc, IC= 5 Adc, IB1= IB2= 0.5 Adc, L = 150�H)|tc|−|−|0.75|�s|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width ≤ 300 � s, Duty Cycle ≤ 1%. 

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100 10<br>70 TJ = 100°C<br>dc<br>25°C<br>50<br>1 BONDING WIRE LIMIT<br>30 VCE = 5 V THERMAL LIMIT<br>SECOND BREAKDOWN LIMIT<br>0.1<br>20<br>TC = 25°C BU407BU406<br>10<br>0.1 0.2 0.3 0.5 0.7 1 2 3 5 7 10 2 3 5 7 10 20 30 50 70 100 200<br>IC, COLLECTOR CURRENT (AMPS) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)<br>hFE, DC CURRENT GAIN<br>IC, COLLECTOR CURRENT (AMP)<br>**----- End of picture text -----**<br>


**Figure 1. DC Current Gain** 

**Figure 2. Maximum Rated Forward Bias Safe Operating Area** 

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**2** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

**TO−220** CASE 221A−09 ISSUE AJ DATE 05 NOV 2019 

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SCALE 1:1<br>**----- End of picture text -----**<br>


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STYLE 1: STYLE 2: STYLE 3: STYLE 4:<br>PIN 1. BASE PIN 1. BASE PIN 1. CATHODE PIN 1. MAIN TERMINAL 1<br>2. COLLECTOR 2. EMITTER 2. ANODE 2. MAIN TERMINAL 2<br>3. EMITTER 3. COLLECTOR 3. GATE 3. GATE<br>4. COLLECTOR 4. EMITTER 4. ANODE 4. MAIN TERMINAL 2<br>STYLE 5: STYLE 6: STYLE 7: STYLE 8:<br>PIN 1. GATE PIN 1. ANODE PIN 1. CATHODE PIN 1. CATHODE<br>2. DRAIN 2. CATHODE 2. ANODE 2. ANODE<br>3. SOURCE 3. ANODE 3. CATHODE 3. EXTERNAL TRIP/DELAY<br>4. DRAIN 4. CATHODE 4. ANODE 4. ANODE<br>STYLE 9: STYLE 10: STYLE 11: STYLE 12:<br>PIN 1. GATE PIN 1. GATE PIN 1. DRAIN PIN 1. MAIN TERMINAL 1<br>2. COLLECTOR 2. SOURCE 2. SOURCE 2. MAIN TERMINAL 2<br>3. EMITTER 3. DRAIN 3. GATE 3. GATE<br>4. COLLECTOR 4. SOURCE 4. SOURCE 4. NOT CONNECTED<br>**----- End of picture text -----**<br>


|**DOCUMENT NUMBER:**|**98ASB42148B**|
|---|---|
|**DESCRIPTION:**|**TO−220**|



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