BU323ZG

## BU323Z 

## NPN Silicon Power Darlington 

## **High Voltage Autoprotected** 

The BU323Z is a planar, monolithic, high−voltage power Darlington with a built−in active zener clamping circuit. This device is specifically designed for unclamped, inductive applications such as Electronic Ignition, Switching Regulators and Motor Control, and exhibit the following main features: 

## **Features** 

- Integrated High−Voltage Active Clamp 

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## **10 AMPERE DARLINGTON AUTOPROTECTED 360 − 450 VOLTS CLAMP, 150 WATTS** 

- Tight Clamping Voltage Window (350 V to 450 V) Guaranteed Over the −40°C to +125°C Temperature Range 

- Clamping Energy Capability 100% Tested in a Live Ignition Circuit 

360 V CLAMP COLLECTOR 2,4 BASE 1 ~~&~~ EMITTER 3 4 **SOT−93 CASE 340D STYLE 1 TO−247 CASE 340L STYLE 3** 

- High DC Current Gain/Low Saturation Voltages Specified Over Full Temperature Range 

- Design Guarantees Operation in SOA at All Times 

- Offered in Plastic SOT−93/TO−218 Type or TO−220 Packages 

• Pb−Free Packages are Available* BASE 1 **MAXIMUM RATINGS Rating Symbol Max Unit** ~~ee ee ee~~ Collector−Emitter Sustaining Voltage VCEO 350 Vdc Collector−Emitter Voltage VEBO 6.0 Vdc 4 Collector Current − Continuous IC 10 Adc − Peak ICM 20 Base Current − Continuous IB 3.0 Adc − Peak IBM 6.0 ~~ee,~~ Total Power Dissipation @ TC = 25 C PD 150 W Derate above 25 C 1.0 W/ C 1 ~~er a~~ Operating and Storage Junction TemperatureRange TJ, Tstg –65 to+175 C 2 3 ~~® ee~~ **THERMAL CHARACTERISTICS Characteristic Symbol Max Unit** ~~ee ee~~ Ss Thermal Resistance, Junction−to−Case R JC 1.0 C/W Maximum Lead Temperature for Soldering TL 260 C ~~——a~~ Purposes: 1/8 ″ from Case for 5 Seconds **NOTE:** ed Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 

**NOTE: Effective June 2012 this device will be available only in the TO−247 package. Reference FPCN# 16827.** 

## **ORDERING INFORMATION** 

- *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. 

Publication Order Number: **BU323Z/D** 

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© Semiconductor Components Industries, LLC, 2012 **May, 2012 − Rev. 16** 

**BU323Z** 

## **MARKING DIAGRAMS** 

**==> picture [272 x 175] intentionally omitted <==**

**----- Start of picture text -----**<br>
TO−247<br>TO−218<br>BU323Z<br>AYWWG<br>AYWWG<br>BU323Z<br>1 BASE 3 EMITTER<br>1 BASE 3 EMITTER<br>2 COLLECTOR<br>2 COLLECTOR<br>BU323Z = Device Code<br>A = Assembly Location<br>Y = Year<br>WW = Work Week<br>G = Pb−Free Package<br>**----- End of picture text -----**<br>


## **ORDERING INFORMATION** 

|**ORDERING INFORMATION**|||
|---|---|---|
|**Device Order Number**|**Package Type**|**Shipping**|
|BU323ZG|TO−218<br>(Pb−Free)|30 Units / Rail|
|BU323ZG|TO−247<br>(Pb−Free)|30 Units / Rail|



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**BU323Z** 

## **ELECTRICAL CHARACTERISTICS** (TC = 25 � C unless otherwise noted) 

|**ELECTRICAL CHARACTERISTICS**(TC= 25�C unless otherwise noted)|**ELECTRICAL CHARACTERISTICS**(TC= 25�C unless otherwise noted)||||||
|---|---|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Min**|**Typ**|**Max**|**Unit**|
|**OFF CHARACTERISTICS (1)**|||||||
|Collector−Emitter Clamping Voltage (IC= 7.0 A)<br>(TC= −40°C to +125°C)||VCLAMP|350|−|450|Vdc|
|Collector−Emitter Cutoff Current<br>(VCE= 200 V, IB= 0)||ICEO|−|−|100|�Adc|
|Emitter−Base Leakage Current<br>(VEB= 6.0 Vdc, IC= 0)||IEBO|−|−|50|mAdc|
|**ON CHARACTERISTICS (1)**|||||||
|Base−Emitter Saturation Voltage<br>(IC= 8.0 Adc, IB= 100 mAdc)<br>(IC= 10 Adc, IB= 0.25 Adc)||VBE(sat)|−<br>−|−<br>−|2.2<br>2.5|Vdc|
|Collector−Emitter Saturation Voltage<br>(IC= 7.0 Adc, IB= 70 mAdc)<br>(TC= 125°C)<br>(IC= 8.0 Adc, IB= 0.1 Adc)<br>(TC= 125°C)<br>(IC= 10 Adc, IB= 0.25 Adc)||VCE(sat)|−<br>−<br>−<br>−<br>−|−<br>−<br>−<br>−<br>−|1.6<br>1.8<br>1.8<br>2.1<br>1.7|Vdc|
|Base−Emitter On Voltage<br>(IC= 5.0 Adc, VCE= 2.0 Vdc)<br>(TC= −40°C to +125°C)<br>(IC= 8.0 Adc, VCE= 2.0 Vdc)||VBE(on)|1.1<br>1.3|−<br>−|2.1<br>2.3|Vdc|
|Diode Forward Voltage Drop<br>(IF= 10 Adc)||VF|−|−|2.5|Vdc|
|DC Current Gain<br>(IC= 6.5 Adc, VCE= 1.5 Vdc)<br>(TC= −40°C to +125°C)<br>(IC= 5.0 Adc, VCE= 4.6 Vdc)||hFE|150<br>500|−<br>−|−<br>3400|−|
|**DYNAMIC CHARACTERISTICS**|||||||
|Current Gain Bandwidth<br>(IC= 0.2 Adc, VCE= 10 Vdc, f = 1.0 MHz)||fT|−|−|2.0|MHz|
|Output Capacitance<br>(VCB= 10 Vdc, IE= 0, f = 1.0 MHz)||Cob|−|−|200|pF|
|Input Capacitance<br>(VEB= 6.0 V)||Cib|−|−|550|pF|
|**CLAMPING ENERGY (see notes)**|||||||
|Repetitive Non−Destructive Energy Dissipated at turn−off:<br>(IC= 7.0 A, L = 8.0 mH, RBE= 100�) (see Figures 2 and 4)||WCLAMP|200|−|−|mJ|
|**SWITCHING CHARACTERISTICS: Inductive Load**(L = 10 mH)|||||||
|Fall Time|(IC= 6.5 A, IB1= 45 mA,<br>VBE(off)= 0, RBE(off)= 0,<br>VCC= 14 V, VZ= 300 V)|tfi|−|625|−|ns|
|Storage Time||tsi|−|10|30|�s|
|Cross−over Time||tc|−|1.7|−|�s|



1. Pulse Test: Pulse Width ≤ 300 � s, Duty Cycle = 2.0%. 

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**3** 

**BU323Z** 

**==> picture [214 x 136] intentionally omitted <==**

**----- Start of picture text -----**<br>
IC<br>INOM = 6.5 A<br>Output transistor turns on: IC = 40 mA<br>High Voltage Circuit turns on: IC = 20 mA<br>Avalanche diode turns on: IC = 100 �A<br>250 V 300 V 340 V VCLAMPV NOMINALCE<br>Icer Leakage Current = 400 V<br>**----- End of picture text -----**<br>


**==> picture [218 x 125] intentionally omitted <==**

**----- Start of picture text -----**<br>
L INDUCTANCE<br>MERCURY CONTACTS (8 mH)<br>WETTED RELAY<br>IC CURRENT<br>VCE SOURCE<br>MONITOR<br>(VGATE)<br>RBE = 100 � 0.1 �<br>IB CURRENTSOURCE IVB2BEoff SOURCE MONITORIC NONINDUCTIVE<br>**----- End of picture text -----**<br>


**Figure 1. IC = f(VCE) Curve Shape** 

**Figure 2. Basic Energy Test Circuit** 

By design, the BU323Z has a built−in avalanche diode and a special high voltage driving circuit. During an auto−protect cycle, the transistor is turned on again as soon as a voltage, determined by the zener threshold and the network, is reached. This prevents the transistor from going into a Reverse Bias Operating limit condition. Therefore, the device will have an extended safe operating area and will always appear to be in “FBSOA.” Because of the built−in zener and associated network, the IC = f(VCE) curve exhibits an unfamiliar shape compared to standard products as shown in Figure 1. 

The bias parameters, VCLAMP, IB1, VBE(off), IB2, IC, and the inductance, are applied according to the Device Under Test (DUT) specifications. VCE and IC are monitored by the test system while making sure the load line remains within the limits as described in Figure 4. 

Note: All BU323Z ignition devices are 100% energy tested, per the test circuit and criteria described in Figures 2 and 4, to the minimum guaranteed repetitive energy, as specified in the device parameter section. The device can sustain this energy on a repetitive basis without degrading any of the specified electrical characteristics of the devices. The units under test are kept functional during the complete test sequence for the test conditions described: IC(peak) = 7.0 A, ICH = 5.0 A, ICL = 100 mA, IB = 100 mA, RBE = 100 �, Vgate = 280 V, L = 8.0 mH 

**==> picture [243 x 169] intentionally omitted <==**

**----- Start of picture text -----**<br>
10<br>300 �s<br>TC = 25°C 1�ms<br>1<br>10�ms<br>250�ms<br>0.1<br>THERMAL LIMIT<br>0.01<br>SECOND BREAKDOWN LIMIT<br>CURVES APPLY BELOW<br>RATED VCEO<br>0.001<br>10 100 340�V 1000<br>VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)<br>IC, COLLECTOR CURRENT (AMPS)<br>**----- End of picture text -----**<br>


**Figure 3. Forward Bias Safe Operating Area** 

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**BU323Z** 

**==> picture [203 x 637] intentionally omitted <==**

**----- Start of picture text -----**<br>
IC<br>ICPEAK<br>IC HIGH<br>IC LOW<br>VCE<br>(a) VGATE MIN<br>IC<br>ICPEAK<br>IC HIGH<br>IC LOW<br>VCE<br>(b) VGATE MIN<br>IC<br>ICPEAK<br>IC HIGH<br>IC LOW<br>VCE<br>(c) VGATE MIN<br>IC<br>ICPEAK<br>IC HIGH<br>IC LOW<br>VCE<br>(d) VGATE MIN<br>**----- End of picture text -----**<br>


The shaded area represents the amount of energy the device can sustain, under given DC biases (IC/IB/VBE(off)/ RBE), without an external clamp; see the test schematic diagram, Figure 2. 

The transistor PASSES the Energy test if, for the inductive load and ICPEAK/IB/VBE(off) biases, the VCE remains outside the shaded area and greater than the VGATE minimum limit, Figure 4a. 

The transistor FAILS if the VCE is less than the VGATE (minimum limit) at any point along the VCE/IC curve as shown on Figures 4b, and 4c. This assures that hot spots and uncontrolled avalanche are not being generated in the die, and the transistor is not damaged, thus enabling the sustained energy level required. 

The transistor FAILS if its Collector/Emitter breakdown voltage is less than the VGATE value, Figure 4d. 

**Figure 4. Energy Test Criteria for BU323Z** 

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**BU323Z** 

**==> picture [491 x 615] intentionally omitted <==**

**----- Start of picture text -----**<br>
10000 10000<br>TYPICAL<br>TJ = 125°C<br>1000 1000<br>-40°C TYP - 6Σ<br>TYP + 6Σ<br>100 25°C 100<br>VCE = 5 V, TJ = 25°C<br>VCE = 1.5 V<br>10 10<br>100 1000 10000 100 1000 10000 100000<br>IC, COLLECTOR CURRENT (MILLIAMPS) IC, COLLECTOR CURRENT (MILLIAMPS)<br>Figure 5. DC Current Gain Figure 6. DC Current Gain<br>5.0<br>4.5 IC = 3 A TJ = 25°C 2.22.4 IC/IB = 150<br>4.0 2.0 TJ = 125°C<br>3.5<br>1.8<br>3.0 5 A 8 A 1.6<br>2.5 10 A<br>1.4<br>2.0 7 A 1.2<br>1.5 1.0<br>1.0 0.8 25°C<br>0.5 0.6<br>0 0.4<br>1 10 100 0.1 1 10<br>IB, BASE CURRENT (MILLIAMPS) IC, COLLECTOR CURRENT (AMPS)<br>Figure 7. Collector Saturation Region Figure 8. Collector−Emitter Saturation Voltage<br>2.0 2.0<br>IC/IB = 150 VCE = 2 VOLTS<br>1.8<br>1.8<br>1.6<br>1.6 TJ = 25°C<br>1.4 TJ = 25°C<br>1.4<br>1.2<br>1.2 125°C 1.0 125°C<br>1.0 0.8<br>0.8 0.6<br>0.1 1 10 0.1 1 10<br>IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)<br>hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN<br>VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)<br>VBE, BASE-EMITTER VOLTAGE (VOLTS)<br>VBE(on), BASE-EMITTER VOLTAGE (VOLTS)<br>**----- End of picture text -----**<br>


**Figure 9. Base−Emitter Saturation Voltage** 

**Figure 10. Base−Emitter “ON” Voltages** 

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**BU323Z** 

## **PACKAGE DIMENSIONS** 

**SOT−93 (TO−218)** CASE 340D−02 ISSUE E 

**==> picture [204 x 179] intentionally omitted <==**

**----- Start of picture text -----**<br>
C<br>B Q E<br>U 4<br>A<br>S L<br>K 1 2 3<br>J<br>D<br>H<br>V<br>G<br>**----- End of picture text -----**<br>


**==> picture [124 x 188] intentionally omitted <==**

**----- Start of picture text -----**<br>
NOTES:<br>1. DIMENSIONING AND TOLERANCING PER ANSI<br>Y14.5M, 1982.<br>2. CONTROLLING DIMENSION: MILLIMETER.<br>MILLIMETERS INCHES<br>DIM MIN MAX MIN MAX<br>A --- 20.35 --- 0.801<br>B 14.70 15.20 0.579 0.598<br>C 4.70 4.90 0.185 0.193<br>D 1.10 1.30 0.043 0.051<br>E 1.17 1.37 0.046 0.054<br>G 5.40 5.55 0.213 0.219<br>H 2.00 3.00 0.079 0.118<br>J 0.50 0.78 0.020 0.031<br>K 31.00 REF 1.220 REF<br>L --- 16.20 --- 0.638<br>Q 4.00 4.10 0.158 0.161<br>S 17.80 18.20 0.701 0.717<br>U 4.00 REF 0.157 REF<br>V 1.75 REF 0.069<br>STYLE 1:<br>PIN 1. BASE<br>2. COLLECTOR<br>3. EMITTER<br>4. COLLECTOR<br>**----- End of picture text -----**<br>


**TO−247** CASE 340L−02 ISSUE F 

**==> picture [312 x 213] intentionally omitted <==**

**----- Start of picture text -----**<br>
−T−<br>C<br>− B−<br>E<br>U L<br>N<br>4<br>A<br>−Q−<br>1 2 3 0.63 (0.025) [M] T B M<br>P<br>−Y−<br>K<br>W J<br>F 2 PL H<br>G<br>D 3 PL<br>0.25 (0.010) [M] Y Q S<br>**----- End of picture text -----**<br>


NOTES: 

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 

2. CONTROLLING DIMENSION: MILLIMETER. 

|S|**DIM**|**MILLIMETERS**|**MILLIMETERS**|**INCHES**|**INCHES**|
|---|---|---|---|---|---|
|||**MIN**|**MAX**|**MIN**|**MAX**|
||**A**<br>|20.32|21.08|0.800|8.30|
||**B**|15.75|16.26|0.620|0.640|
||**C**|4.70|5.30|0.185|0.209|
||**D**|1.00|1.40|0.040|0.055|
||**E**|190|260|0075|0102|
||**F**<br>|.<br>1.65<br>|.<br>2.13<br>|.<br>0.065<br>|.<br>0.084<br>|
||**G**|5.45 BSC||0.215 BSC||
||**H**|1.50|2.49|0.059|0.098|
||**J**|0.40|0.80|0.016|0.031|
||**K**|19.81|20.83|0.780|0.820|
||**L**|5.40|6.20|0.212|0.244|
||**N**|4.32|5.49|0.170|0.216|
||**P**|---|4.50|---|0.177|
||**Q**|3.55|3.65|0.140|0.144|
||**U**|6.15 BSC||0.242 BSC||
||**W**|2.87|3.12|0.113|0.123|
||TYLE 3:<br>PIN 1. BASE<br>2. COLLECTOR<br>3. EMITTER<br>4COLLECTOR|||||



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**BU323Z** 

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**BU323Z/D** 

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