BU2010-E3/45

## **BU2006, BU2008, BU2010** www.vishay.com Vishay General Semiconductor ae ~~a~~ **Enhanced isoCink+™ Bridge Rectifiers** 

## **FEATURES** 

- UL recognition file number E312394 

- Thin single in-line package 

- Glass passivated chip junction 

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[-] [+]<br>+ [~ ~] - [~ ~]<br>isoCink+™<br>Case Style BU<br>+ ~ ~ -<br>**----- End of picture text -----**<br>


- Superior thermal conductivity 

Available 

- Solder dip 275 °C max. 10 s, per JESD 22-B106 

- Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 

## **TYPICAL APPLICATIONS** 

General purpose use in AC/DC bridge full wave rectification for switching power supply, home appliances and white-goods applications. 

## **MECHANICAL DATA** 

## **Case:** BU 

## **LINKS TO ADDITIONAL RESOURCES** 

3D Models 

## **PRIMARY CHARACTERISTICS** 

|**PRIMARY CHARACTERISTICS**|**PRIMARY CHARACTERISTICS**|
|---|---|
|IF(AV)|20 A|
|VRRM|600 V, 800 V, 1000 V|
|IFSM|240 A|
|IR|5 μA|
|VFat IF= 10 A|0.85 V|
|TJmax.|150 °C|
|Package|BU|
|Circuit configurations|In-line|



Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade 

**Terminals:** matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 

E3 and M3 suffix meet JESD 201 class 1A whisker test 

**Polarity:** as marked on body 

**Mounting Torque:** 10 cm-kg (8.8 inches-lbs) max. **Recommended Torque:** 5.7 cm-kg (5 inches-lbs) 

## **MAXIMUM RATINGS** (TA = 25 °C unless otherwise noted) 

|**MAXIMUM RATINGS**(TA = 25 °C unless otherwise noted)TA = 25 °C unless otherwise noted)A = 25 °C unless otherwise noted)= 25 °C unless otherwise noted))|**MAXIMUM RATINGS**(TA = 25 °C unless otherwise noted)TA = 25 °C unless otherwise noted)A = 25 °C unless otherwise noted)= 25 °C unless otherwise noted))|**MAXIMUM RATINGS**(TA = 25 °C unless otherwise noted)TA = 25 °C unless otherwise noted)A = 25 °C unless otherwise noted)= 25 °C unless otherwise noted))|**MAXIMUM RATINGS**(TA = 25 °C unless otherwise noted)TA = 25 °C unless otherwise noted)A = 25 °C unless otherwise noted)= 25 °C unless otherwise noted))|**MAXIMUM RATINGS**(TA = 25 °C unless otherwise noted)TA = 25 °C unless otherwise noted)A = 25 °C unless otherwise noted)= 25 °C unless otherwise noted))|**MAXIMUM RATINGS**(TA = 25 °C unless otherwise noted)TA = 25 °C unless otherwise noted)A = 25 °C unless otherwise noted)= 25 °C unless otherwise noted))|
|---|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**BU2006**|**BU2008**|**BU2010**|**UNIT**|
|Maximum repetitive peak reverse voltage|VRRM|600|800|1000|V|
|Average rectified forward current (Fig. 1, 2)<br>TC= 61 °C(1)<br>TA= 25 °C(2)|IO|20|||A|
|||3.5||||
|Non-repetitive peak forward surge current<br>8.3 ms single sine-wave, TJ= 25 °C|IFSM|240|||A|
|Ratingfor fusing(t < 8.3 ms) TJ= 25 °C|I2t|239|||A2s|
|Operating junction and storage temperature range|TJ, TSTG|-55 to +150|||°C|



## **Notes** 

> (1) With 60 W air cooled heatsink 

- (2) Without heatsink, free air 

Revision: 08-Jul-2022 

Document Number: 84804 

**1** 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**BU2006, BU2008, BU2010** 

www.vishay.com 

Vishay General Semiconductor 

|**ELECTRICAL CHARACTERISTICS**(TA= 25 °C unless otherwise noted)|**ELECTRICAL CHARACTERISTICS**(TA= 25 °C unless otherwise noted)|**ELECTRICAL CHARACTERISTICS**(TA= 25 °C unless otherwise noted)|**ELECTRICAL CHARACTERISTICS**(TA= 25 °C unless otherwise noted)|**ELECTRICAL CHARACTERISTICS**(TA= 25 °C unless otherwise noted)|**ELECTRICAL CHARACTERISTICS**(TA= 25 °C unless otherwise noted)|**ELECTRICAL CHARACTERISTICS**(TA= 25 °C unless otherwise noted)|
|---|---|---|---|---|---|---|
|**PARAMETER**|**TEST CONDITIONS**||**SYMBOL**|**TYP.**|**MAX.**|**UNIT**|
|Maximum instantaneous forward<br>voltage per diode(1)|IF= 10 A|TA= 25 °C|VF|0.95|1.05|V|
|||TA= 125 °C||0.85|0.95||
|Maximum reverse current per diode|rated VR|TA= 25 °C|IR|-|5.0|μA|
|||TA= 125 °C||110|350||
|Typical junction capacitance per diode|4.0 V, 1 MHz||CJ|95|-|pF|



## **Note** 

- (1) Pulse test: 300 μs pulse width, 1 % duty cycle 

|**THERMAL CHARACTERISTICS**(TA= 25 °C unless otherwise noted)|**THERMAL CHARACTERISTICS**(TA= 25 °C unless otherwise noted)|**THERMAL CHARACTERISTICS**(TA= 25 °C unless otherwise noted)|**THERMAL CHARACTERISTICS**(TA= 25 °C unless otherwise noted)|**THERMAL CHARACTERISTICS**(TA= 25 °C unless otherwise noted)|**THERMAL CHARACTERISTICS**(TA= 25 °C unless otherwise noted)|
|---|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**BU2006**|**BU2008**|**BU2010**|**UNIT**|
|Typical thermal resistance|RθJC(1)|2.4|||°C/W|
||RθJA (2)|20||||



## **Notes** 

- (1) With 60 W air cooled heatsink 

- (2) Without heatsink, free air 

|**ORDERING INFORMATION**(Example)|**ORDERING INFORMATION**(Example)|**ORDERING INFORMATION**(Example)|**ORDERING INFORMATION**(Example)|**ORDERING INFORMATION**(Example)|
|---|---|---|---|---|
|**PREFERRED P/N**|**UNIT WEIGHT (g)**|**PREFERRED PACKAGE CODE**|**BASE QUANTITY**|**DELIVERY MODE**|
|BU2006-E3/45|4.76|45|20|Tube|
|BU2006-E3/51|4.76|51|250|Paper tray|
|BU2006-M3/45|4.76|45|20|Tube|



Revision: 08-Jul-2022 

Document Number: 84804 

**2** 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**BU2006, BU2008, BU2010** 

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www.vishay.com<br>**----- End of picture text -----**<br>


## Vishay General Semiconductor 

## **RATINGS AND CHARACTERISTICS CURVES** (TA = 25 °C unless otherwise specified) 

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With Heatsink<br>Sine-Wave, R-Load<br>TC Measured at Device Bottom<br>TC TC<br>Case Temperature (°C)<br>Fig. 1 - Derating Curve Output Rectified Current<br>Without Heatsink<br>Sine-Wave, R-Load<br>Free Air, TA<br>Ambient Temperature (°C)<br>Fig. 2 - Forward Current Derating Curve<br>50<br>40<br>30<br>20<br>10<br>0<br>0 4 8 12 16 20 24<br>Average Forward Current (A)<br>24<br>20<br>16<br>12<br>8<br>4<br>0<br>0 25 50 75 100 125 150<br>5<br>4<br>3<br>2<br>1<br>0<br>0 25 50 75 100 125 150<br>Forward Power Dissipation (W)<br>Average Forward Rectified Current (A)<br>Average Forward Output Current (A)<br>**----- End of picture text -----**<br>


Fig. 3 - Forward Power Dissipation 

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100<br>T J  = 150 °C<br>10<br>T J  = 125 °C<br>1<br>0.1<br>TJ = 25 °C<br>0.01<br>0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1<br>Instantaneous Forward Voltage (V)<br>Fig. 4 - Typical Forward Characteristics Per Diode<br>1000<br>TJ = 150 °C<br>100<br>TJ = 125 °C<br>10<br>1<br>TJ = 25 °C<br>0.1<br>10 20 30 40 50 60 70 80 90 100<br>Percent of Rated Peak Reverse Voltage (%)<br>Fig. 5 - Typical Reverse Characteristics Per Diode<br>Reverse Voltage (V)<br>1000<br>100<br>10<br>0.1 1 10 100<br>Instantaneous Reverse Current (µA)<br>Instantaneous Forward Current (A)<br>Junction Capacitance (pF)<br>**----- End of picture text -----**<br>


Fig. 4 - Typical Forward Characteristics Per Diode 

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Fig. 5 - Typical Reverse Characteristics Per Diode<br>**----- End of picture text -----**<br>


Fig. 6 - Typical Junction Capacitance Per Diode 

Revision: 08-Jul-2022 

Document Number: 84804 

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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**BU2006, BU2008, BU2010** 

www.vishay.com 

Vishay General Semiconductor 

## **PACKAGE OUTLINE DIMENSIONS** in inches (millimeters) 

## **Case Type BU** 

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0.161 (4.10)<br>0.142 (3.60)<br>0.880 (22.3)<br>0.860 (21.8) View A<br>0.020R (TYP.) 9°<br>0.125 (3.2) x 45° TYP.<br>Chamfer 0.160 (4.1) 0.310 (7.9)<br>0.140 (3.5) 0.290 (7.4)<br>0.740 (18.8)<br>0.075 0.720 (18.3)<br>0.080 (2.03) (1.9) R<br>0.060 (1.52) 0.085 (2.16)<br>+ ~ ~ - 0.065 (1.65) 5°<br>TYP.<br>0.048 (1.23)<br>0.039 (1.00)<br>0.710 (18.0)<br>0.690 (17.5)<br>0.050 (1.27) 0.100 (2.54)<br>0.040 (1.02) 0.085 (2.16)<br>0.028 (0.72)<br>0.080 (2.03) 0.020 (0.52)<br>0.190 (4.83) 0.065 (1.65)<br>0.210 (5.33)<br>**----- End of picture text -----**<br>


Polarity shown on front side of case, positive lead beveled corner 

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0.055 (1.385) REF.<br>0.094 (2.39) x 45° REF.<br>R 0.11<br>(2.78) REF.<br>0.64 (16.28) REF.<br>0.62 (15.78) REF.<br>R 0.10<br>(2.60) REF.<br>0.055 (1.385) REF.<br>**----- End of picture text -----**<br>


Revision: 08-Jul-2022 

Document Number: 84804 

**4** 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**BU2006, BU2008, BU2010** 

www.vishay.com 

Vishay General Semiconductor 

## **APPLICATION NOTE** 

1. Device UL approved for safety use dielectric strength of 1500 V 

2. If device is mounted in Floating Ground (F. G.) application, insulator is recommended to use to meet safety requirement. 

3. Heat sink shape recommendation: 

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(3)<br>Heatsink<br>2.5 mm MIN. 2.5 mm MIN.<br>By Safety Requirements<br>**----- End of picture text -----**<br>


Revision: 08-Jul-2022 

Document Number: 84804 

**5** 

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

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Revision: 01-Jan-2022 

Document Number: 91000 

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