BTW69-1200N

## **BTW69-1200N** 

## 50 A – 1200 V non insulated SCR thyristor 

**Datasheet** - **production data** 

## **Features** 

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**TOP3 non insulated** 

## **Description** 

Available in non insulated TOP3 high power package, the BTW69-1200N is suitable for applications where power switching and power dissipation are critical, such as by-pass switch, controlled AC rectifier bridge, in solid state relay, battery charger, uninterruptible power supply, welding equipment and motor driver applications. 

Based on a clip assembly technology, the BTW69-1200N offers a superior performance in surge current handling and thermal cooling capabilities. 

**Table 1. Device summary** 

|**Symbol**|**Value**|
|---|---|
|IT(RMS)|50 A|
|VDRM/VRRM|1200 V|
|IGT|50 mA|



- On-state rms current: 50 A 

- Blocking voltage: 1200 V 

- Gate current: 50 mA 

## **Applications** 

- Solid state relay 

- Battery charging system 

- Uninterruptible power supply 

- Variable speed motor drive 

- Industrial welding systems 

- By pass AC switch 

June 2013 

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This is information on a product in full production. 

_www.st.com_ 

**Characteristics** 

**BTW69-1200N** 

## **1 Characteristics** 

**Table 2. Absolute maximum ratings (limiting values)** 

|**Symbol**|**Parameter**|**Parameter**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|---|---|
|IT(RMS)|On-state current rms (180° conduction angle)||Tc= 102 °C|50|A|
|IT(AV)|Average on-state current (180° conduction angle)||Tc= 102 °C|31|A|
|ITSM|Non repetitive surge peak on-state<br>current|tp= 8.3 ms|Tj= 25 °C|763|A|
|||tp= 10 ms||700||
|I²t|I²t Value|tp= 10 ms|Tj= 25 °C|2450|A2S|
|dI/dt|Critical rate of rise of on-state current<br>Gate supply: IG= 100 mA, dIG/dt = 1 A/µs|||100|A/µs|
|IGM|Peak gate current|tp= 20 µs|Tj= 125 °C|8|A|
|PG(AV)|Average gate power dissipation||Tj= 125 °C|1|W|
|Tstg<br>Tj|Storage junction temperature range<br>Operating junction temperature range|||- 40 to + 150<br>- 40 to + 125|°C|
|VGM|Maximum peak reverse gate voltage|||5|V|



**Table 3. Electrical characteristics (Tj = 25 °C, unless otherwise specified)** 

|||||||
|---|---|---|---|---|---|
|**Symbol**|**Test conditions**|||**Value**|**Unit**|
|IGT|VD= 12 V, RL= 33||MIN.|8|mA|
||||MAX.|50||
|VGT|||MAX.|1.3|V|
|VGD|VD= VDRM,RL= 3.3 k|Tj= 125 °C|MIN.|0.2|V|
|IH|IT= 500 mA, gate open||MAX.|100|mA|
|IL|IG= 1.2 x IGT||TYP.|125|mA|
|tgt|IT= 50 A, VD= VDRM, IG= 200 mA, dIG/dt|= 0.2 A/µs|TYP.|2|µs|
|dV/dt|VD= 67% VDRM,gate open|Tj= 125 °C|MIN.|1000|V/µs|
|tq|VD= 800 V, ITM= 50 A, VR= 75 V,<br>tp= 100 µs, dITM/dt = 30 A/µs,<br>dVD/dt = 20 V/µs|Tj= 125 °C|TYP.|100|µs|
|VTM|ITM= 100 A, tp= 380 µs|Tj= 25 °C|MAX.|1.6|V|
|Vt0|Threshold voltage|Tj= 125 °C|MAX.|0.9|V|
|RD|Dynamic resistance|Tj= 125 °C|MAX.|8.5|m|
|IDRM<br>IRRM|VD= VDRM<br>VR= VRRM|Tj= 25 °C|MAX.|10|µA|
|||Tj= 125 °C||5|mA|



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**Table 4. Thermal resistance** 

||**Table 4. Thermal resistance**|||
|---|---|---|---|
|**Symbol**|**Parameter**|**Value**|**Unit**|
|Rth(j-c)<br>Junction to|case (DC, typ.)|0.45|°C/W|
|Rth(j-a)<br>Junction to|ambient (DC)|50|°C/W|



**Figure 1. Maximum average power dissipation versus average on-state current** 

**Figure 2. Correlation between maximum average power dissipation and maximum allowable temperatures** 

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55 P(W) P(AV)(W) Tc(°C) 100.2<br>50 � = 120° � = 180° DC 50 � = 180° 102.7<br>45 � = 90° 105.2<br>40 � = 60° 40 107.7<br>35 � = 30° 110.2<br>30 30<br>25 (assembly) RTH 112.7<br>20 20 0 °C/W 115.2<br>15 360° 1 °C/W2 °C/W 117.7<br>10 10 3 °C/W 120.2<br>5 IT(AV)(A) � T a (°C) 122.7<br>0 0<br>0 5 10 15 20 25 30 35 40 0 25 50 75 100 125<br>Figure 3. Average and DC on-state current  Figure 4. Average and DC on-state current<br>versus case temperature versus ambient temperature<br>55 IT(AV)(A) 3.0 IT(AV)(A)<br>DC<br>50 DC<br>45 � = 120° 2.5<br>40 � = 60° � = 90° � = 180°<br>35 � = 180° 2.0<br>30<br>1.5<br>25<br>20<br>1.0<br>15<br>10 � = 30° 0.5<br>5 T case (°C) Ta(°C)<br>0 0.0<br>0 25 50 75 100 125 0 25 50 75 100 125<br>**----- End of picture text -----**<br>


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**Characteristics** 

**BTW69-1200N** 

**Figure 5. Relative variation of thermal impedance versus pulse duration** 

**Figure 6. Relative variation of gate trigger current and gate trigger voltage versus junction temperature (typical value)** 

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1.0E+00 K=[Zth/Rth] 1.8 IGT,VGT [T j] / IGT,VGT [T =25°Cj ]<br>Z th(j-c) Z th(j-a) 1.5 IGT<br>1.3<br>1.0 V GT<br>1.0E-01<br>0.8<br>0.5<br>0.3<br>1.0E-02 tp(s) T (°C)j<br>0.0<br>1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03<br>-40 -20 0 20 40 60 80 100 125<br>**----- End of picture text -----**<br>


**Figure 7. Relative variation of holding, and latching currents versus junction temperature (typical values)** 

**Figure 8. Surge peak on-state current versus number of cycles** 

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IH,IL [T j] / IH,IL [T =25°Cj ]<br>1.8 ITSM(A)<br>600<br>1.5 550<br>IL 500 tp=10ms<br>1.3 IH 450400 Non repetitive One cycle<br>1.0 350 Tj initial=25 °C<br>300<br>0.8 250<br>200<br>0.5 150<br>100<br>0.3 T (°C)j 500 T RepetitiveC =102°C Number of cycles<br>0.0<br>1 10 100 1000<br>-40 -20 0 20 40 60 80 100 125<br>**----- End of picture text -----**<br>


**Figure 9. Non repetitive surge peak on-state current and corresponding value of I[2] t versus sinusoidal pulse** 

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ITSM(A), I t 2 (A s2 )<br>10000<br>dI/dt limitation: 100 A/µs Tj initial=25 °C<br>I²t<br>ITSM<br>1000<br>100<br>pulse with width tp < 10 ms tp(ms)<br>10<br>0.01 0.10 1.00 10.00<br>**----- End of picture text -----**<br>


**Figure 10. On-state characteristics (maximum values)** 

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ITM (A)<br>1000<br>100<br>10<br>Tj max :<br>Tj =125 °C Tj =25 °C VTM (V) RVd to  = 8.5 m= 0.9 V�<br>1<br>0.0 1.0 2.0 3.0 4.0<br>**----- End of picture text -----**<br>


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**Characteristics** 

**BTW69-1200N** 

**Figure 11. Relative variation of leakage current versus junction temperature for different values of blocking voltage (600 and 800 V)** 

**Figure 12. Relative variation of leakage current versus junction temperature for different values of blocking voltage (1000 and 1200 V)** 

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IDRM,IRRM [Tj;V DRM,VRRM] / IDRM,IRRM IDRM,IRRM [Tj;V DRM,VRRM] / IDRM,IRRM<br>1.0E+00 1.0E+00<br>1.0E-01 VDRM=VRRM=800 V 1.0E-01 VDRM=VRRM=1200 V<br>1.0E-02 VDRM=VRRM=600 V 1.0E-02 VDRM=VRRM=1000 V<br>1.0E-03 1.0E-03<br>Tj(°C) T j (°C)<br>1.0E-04 1.0E-04<br>25 50 75 100 125 25 50 75 100 125<br>**----- End of picture text -----**<br>


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**Package information** 

**BTW69-1200N** 

## **2 Package information** 

- Epoxy meets UL94,V0 

- Lead-free packages 

- Cooling method: by conduction (C) 

- Recommended torque value: 0.9 to 1.2 N·m 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _www.st.com._ ECOPACK[®] is an ST trademark. 

## **Figure 13. TOP3 dimension definitions** 

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H A<br>R B<br>ØL<br>K<br>F G<br>P<br>C<br>D<br>J J<br>E<br>**----- End of picture text -----**<br>


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**Package information** 

## **Table 5. TOP3 dimension values** 

||**Table 5. TOP3 dimension values**|**Table 5. TOP3 dimension values**|**Table 5. TOP3 dimension values**|**Table 5. TOP3 dimension values**|
|---|---|---|---|---|
|**Ref.**|**Dimensions**||||
||**Millimeters**||**Inches**||
||**Min.**|**Max.**|**Min.**|**Max.**|
|A|4.4|4.6|0.173|0.181|
|B|1.45|1.55|0.057|0.061|
|C|14.35|15.60|0.565|0.614|
|D|0.5|0.7|0.020|0.028|
|E|2.7|2.9|0.106|0.114|
|F|15.8|16.5|0.622|0.650|
|G|20.4|21.1|0.815|0.831|
|H|15.1|15.5|0.594|0.610|
|J|5.4|5.65|0.213|0.222|
|K|3.4|3.65|0.134|0.144|
|ØL|4.08|4.17|0.161|0.164|
|P|1.20|1.40|0.047|0.055|
|R|4.60 typ.||0.181 typ.||



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**Ordering information** 

**BTW69-1200N** 

## **3 Ordering information** 

## **Figure 14. Ordering information scheme** 

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BTW    69    -    1200   N<br>Standard SCR series<br>Type<br>69 = 50 A<br>Voltage<br>1200 = 1200 V<br>Package<br>N = TOP3 non insulated<br>**----- End of picture text -----**<br>


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Table 6. Ordering information<br>**----- End of picture text -----**<br>


|**Order code**|**Marking**|**Package**|**Weight**|**Base qty**|**Delivery mode**|
|---|---|---|---|---|---|
|BTW69-1200N|BTW691200N|TOP3|4.55 g|30|Tube|



## **4 Revision history** 

**Table 7. Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|14-Jun-2013|1|Initial release.|



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