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BTB12-600TW3G
Triac, 600 V, 12 A, TO-220AB, 1.3 V, 10 mA
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- Manufacturer: LITTELFUSE
- Product type:
- Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current IT(rms):12A; Triac Case Style:TO-220AB; Gate Trigger Current Max (QI), Igt:5mA; Gate Trigger Voltage Max Vgt:1.3V; Peak Gate
- MSL: MSL 1 - Unlimited
- SVHC: To Be Advised
- No. of Pins: 3Pins
- Product Range: BTB12-x00TW
- Triac Case Style: TO-220AB
- Thyristor Mounting: Through Hole
- Holding Current Max: 10mA
- On State RMS Current: 12A
- Peak On State Voltage: 1.55V
- Gate Trigger Voltage Max: 1.3V
- Operating Temperature Max: 110°C
- Peak Non Repetitive Surge Current: -
- Peak Repetitive Off State Voltage: 600V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.519 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
Thyristors **Datasheet** ## **BTB12-600TW3G** Surface Mount – 600V — **==> picture [10 x 6] intentionally omitted <==** **----- Start of picture text -----**<br> Pb<br>**----- End of picture text -----**<br> ## **Description** The BTB12 is designed for high performance full-wave AC control applications where high noise immunity and high commutating di/ dt are required. ## **Features** ## **Additional Information** - Minimizes Snubber Networks for Protection - Blocking Voltage to 600 V - On-State Current Rating of 12 Amperes RMS at 80°C ■ Industry Standard TO-220AB Package - Uniform Gate Trigger Currents in Three Quadrants ■ High Commutating dI/dt − 1.75 A/ms minimum at 110°C - High Immunity to dV/dt − 10 V/µs minimum at 125°C - These are Pb−Free Devices ## **Functional Diagram** **==> picture [119 x 19] intentionally omitted <==** **----- Start of picture text -----**<br> MT 2 MT 1<br>G<br>**----- End of picture text -----**<br> **==> picture [198 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> Resources Accessories Samples<br>**----- End of picture text -----**<br> ## **Pin Out** **==> picture [94 x 33] intentionally omitted <==** **----- Start of picture text -----**<br> CASE 221A<br>STYLE 4<br>1 2<br>**----- End of picture text -----**<br> © 2021 Littelfuse, Inc. Specifications are subject to change without notice. Revised: GD. 02/18/21 **1** Thyristors **Datasheet** **BTB12-600TW3G** Surface Mount – 600V **==> picture [46 x 52] intentionally omitted <==** **==> picture [313 x 52] intentionally omitted <==** ## **Maximum Ratings** (TJ = 25°C unless otherwise noted) **==> picture [506 x 160] intentionally omitted <==** **----- Start of picture text -----**<br> Rating Symbol Value Unit<br>Peak Repetitive Off-State Voltage (Note 1) BTB12−600BW3G VDRM, 600 V<br>(Gate Open, Sine Wave 50 to 60 Hz, TJ = -40° to 110°C) VRRM<br>On-State RMS Current (Full Cycle Sine Wave, 60 Hz, TC = 80°C) IT (RMS) 12 A<br>Peak Non-Repetitive Surge Current<br>(One Full Cycle Sine Wave, 60 Hz, TC= 25°C) ITSM 126 A<br>Circuit Fusing Consideration (t = 8.3 ms) I [2] t 66 A²sec<br>Non−Repetitive Surge Peak Off−State Voltage(TJ = 25°C, t = 10 ms) VDSM/ VRSM VDSM+100/ VRSM V<br>Peak Gate Current (TJ = 110°C, t = 20µs) IGM 4.0 W<br>Peak Gate Power (Pulse Width ≤ 1.0 µs, TC = 80°C) PGM 20 W<br>Average Gate Power (TJ = 110°C) PG(AV) 1.0 W<br>Operating Junction Temperature Range TJ -40 to +110 °C<br>Storage Temperature Range Tstg -40 to +150 °C<br>**----- End of picture text -----**<br> Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. ## **Thermal Characteristics** **==> picture [506 x 48] intentionally omitted <==** **----- Start of picture text -----**<br> Rating Symbol Value Unit<br>Thermal Resistance, Junction−to−Case (AC) R Ɵ JC 1.8 °C/W<br>Junction−to−Ambient R Ɵ JA 60<br>Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds TL 260 °C<br>**----- End of picture text -----**<br> **Electrical Characteristics - OFF** (TJ = 25°C unless otherwise noted ; Electricals apply in both directions) **==> picture [506 x 37] intentionally omitted <==** **----- Start of picture text -----**<br> Characteristic Symbol Min Typ Max Unit<br>Peak Repetitive Blocking Current TJ = 25°C IDRM, - - 0.005 mA<br>(VD = VDRM = VRRM; Gate Open) TJ = 110°C IRRM - - 1.0<br>**----- End of picture text -----**<br> **Electrical Characteristics - ON** (TJ = 25°C unless otherwise noted; Electricals apply in both directions) **==> picture [506 x 175] intentionally omitted <==** **----- Start of picture text -----**<br> Characteristic Symbol Min Typ Max Unit<br>Forward On-State Voltage (Note 2) (ITM = ±17 A Peak) VTM − − 1.55 V<br>MT2(+), G(+) 1.2 − 5.0<br>Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 30 Ω) MT2(+), G(−) IGT 1.2 − 5.0 mA<br>MT2(−), G(−) 1.2 − 5.0<br>Holding Current (VD = 12 V, Gate Open, Initiating Current = ±100 mA) IH − − 10 mA<br>MT2(+), G(+) − − 15<br>Latching Current (VD = 1.2 V, IG = 7.5 mA) MT2(+), G(−) IL − − 15 mA<br>MT2(−), G(−) − − 15<br>MT2(+), G(+) 0.5 − 1.3<br>Gate Trigger Voltage (VD = 12 V, RL = 30 Ω) MT2(+), G(−) VGT 0.5 − 1.3 V<br>MT2(−), G(−) 0.5 − 1.3<br>MT2(+), G(+) 0.2 − −<br>Gate Non−Trigger Voltage (TJ = 110°C) MT2(+), G(−) VGD 0.2 − − V<br>MT2(−), G(−) 0.2 − −<br>**----- End of picture text -----**<br> **2.** Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%. © 2021 Littelfuse, Inc. Specifications are subject to change without notice. Revised: GD. 02/18/21 **2** Thyristors **Datasheet** **BTB12-600TW3G** Surface Mount – 600V **==> picture [46 x 52] intentionally omitted <==** **==> picture [313 x 52] intentionally omitted <==** ## **Dynamic Characteristics** **==> picture [506 x 82] intentionally omitted <==** **----- Start of picture text -----**<br> Characteristic Symbol Min Typ Max Unit<br>Rate of Change of Commutating Current, See Figure 10. (dI/dt)c 1.75 − − A/ms<br>(Gate Open, TJ = 125°C, No Snubber)<br>Critical Rate of Rise of On−State Current dI/dt − − 45 A/µs<br>(TJ = 125°C, f = 120 Hz, IG = 2 x IGT, tr ≤ 100 ns)<br>Critical Rate of Rise of Off-State Voltage dV/dt 10 − − V/µs<br>(VD = 0.66 x VDRM, Exponential Waveform, Gate Open, TJ = 125°C)<br>**----- End of picture text -----**<br> ## **Voltage Current Characteristic of SCR** **==> picture [245 x 96] intentionally omitted <==** **----- Start of picture text -----**<br> Symbol Parameter<br>VDRM Peak Repetitive Forward Off State Voltage<br>IDRM Peak Forward Blocking Current<br>VRRM Peak Repetitive Reverse Off State Voltage<br>IRRM Peak Reverse Blocking Current<br>VTM Maximum On State Voltage<br>IH Holding Current<br>**----- End of picture text -----**<br> ## **Quadrant Definitions for a Triac** **==> picture [245 x 237] intentionally omitted <==** **----- Start of picture text -----**<br> MT2 POSITIVE<br>(Positive Half Cycle)<br>+<br>(+) MT 2 (+) MT 2<br>Quadrant II ( ) IGT (+) IGT Quadrant I<br>GA TE GA TE<br>MT 1 MT 1<br>RE F RE F<br>IGT +I GT<br>( ) MT 2 ( ) MT 2<br>Quadrant III ( ) IGT (+) IGT Quadrant IV<br>GA TE GA TE<br>MT 1 MT 1<br>RE F RE F<br>MT2 NEGA TIVE<br>(Negative Half Cycle)<br>**----- End of picture text -----**<br> **==> picture [223 x 137] intentionally omitted <==** **----- Start of picture text -----**<br> +C urrent<br>Quadrant 1<br>Main Terminal 2 +<br>V TM<br>on stat e<br>IH<br>IRR M at VRR M<br>off stat e +V oltage<br>IH IDR M at VDR M<br>Quadrant 3Main Terminal 2 V TM<br>**----- End of picture text -----**<br> All polarities are referenced to MT1. With in phase signals (using standard AC lines) quadrants I and III are used © 2021 Littelfuse, Inc. Specifications are subject to change without notice. Revised: GD. 02/18/21 **3** Thyristors **Datasheet** **BTB12-600TW3G** Surface Mount – 600V **==> picture [46 x 52] intentionally omitted <==** **Figure 1. RMS Current Derating** **==> picture [313 x 52] intentionally omitted <==** **Figure 2. On-State Power Dissipation** **==> picture [505 x 170] intentionally omitted <==** **Figure 3. On−State Characteristics** **==> picture [243 x 377] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>TYPICAL AT<br>T J = 25 °C<br>10<br>1<br>0.1<br>00 .5 1.0 1.5 2.0 2.5 3.0<br>V T, INST AN TANEOUS ON-ST ATE VO LTAGE (V )<br>)<br>ST ATE CURRENT (A<br>AN TANEOUS ON<br>, INSTIT<br>**----- End of picture text -----**<br> **Figure 4. Thermal Response** **==> picture [244 x 170] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>0.1<br>0.0 1<br>0.1 1 10 100 1000 4<br>t, TIME (ms)<br>r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)<br>**----- End of picture text -----**<br> **Figure 5. Typical Hold Current Variation** **==> picture [244 x 171] intentionally omitted <==** © 2021 Littelfuse, Inc. Specifications are subject to change without notice. Revised: GD. 02/18/21 **4** Thyristors **Datasheet** **BTB12-600TW3G** Surface Mount – 600V **==> picture [46 x 52] intentionally omitted <==** **Figure 6. Typical Gate Trigger Current Variation** **==> picture [313 x 52] intentionally omitted <==** **Figure 7. Typical Gate Trigger Voltage Variation** **==> picture [504 x 171] intentionally omitted <==** **Figure 8. Typical Latching Current Variation** **==> picture [243 x 170] intentionally omitted <==** **Figure 9. Critical Rate of Rise of Off-State Voltage (Exponential Waveform)** **==> picture [243 x 170] intentionally omitted <==** **----- Start of picture text -----**<br> 5000<br>VD = 600 Vpk<br>4K TJ = 110°C<br>3K<br>2K<br>1K<br>0<br>10 100 1000<br>RG, GATE TO MAIN TERMINAL 1 RESIST ANCE (OHMS)<br>µ<br>**----- End of picture text -----**<br> **Figure 10. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)** **==> picture [504 x 171] intentionally omitted <==** **----- Start of picture text -----**<br> LL 1N4007<br>200 VRMS<br>ADJUST FOR MEASURE<br>ITM, 60 Hz VAC I<br>CHARGE<br>CHARGE TRIGGER CONTROL - 200 V<br>+<br>MT2<br>1N914 51<br>MT1<br>G<br>CL<br>TRIGGER CONTROL<br>**----- End of picture text -----**<br> **Note:** Component values are for verification of rated (di/dt)c. See AN1048 for additional information © 2021 Littelfuse, Inc. Specifications are subject to change without notice. Revised: GD. 02/18/21 **5** Thyristors **Datasheet** **BTB12-600TW3G** Surface Mount – 600V **==> picture [46 x 52] intentionally omitted <==** **==> picture [313 x 52] intentionally omitted <==** ## **Part Marking System** ## **Dimensions** **==> picture [164 x 147] intentionally omitted <==** **----- Start of picture text -----**<br> 4<br>BTB12-6TWG<br>YMAXX<br>TO 220AB<br>CASE 221A<br>1 2 3 STYLE 12<br>x =6 or 8<br>Y =Year<br>M =Month<br>A =Assembly Site<br>XX =Lot Serial Code<br>G =Pb-Free Package<br>**----- End of picture text -----**<br> **==> picture [207 x 162] intentionally omitted <==** **----- Start of picture text -----**<br> SEATING<br>PLANE<br>B F C<br>T<br>S<br>4<br>Q A<br>12 3 U<br>H<br>K<br>Z<br>L R<br>V J<br>G<br>D<br>N<br>**----- End of picture text -----**<br> **==> picture [245 x 260] intentionally omitted <==** **----- Start of picture text -----**<br> Inches Millimeters<br>Dim<br>Min Max Min Max<br>A 0.590 0.620 14.99 15.75<br>B 0.380 0.420 9.65 10.67<br>C 0.178 0.188 4.52 4.78<br>D 0.025 0.035 0.64 0.89<br>F 0.142 0.147 3.61 3.73<br>G 0.095 0.105 2.41 2.67<br>H 0.110 0.130 2.79 3.30<br>J 0.018 0.024 0.46 0.61<br>K 0.540 0.575 13.72 14.61<br>L 0.060 0.075 1.52 1.91<br>N 0.195 0.205 4.95 5.21<br>Q 0.105 0.115 2.67 2.92<br>R 0.085 0.095 2.16 2.41<br>S 0.045 0.060 1.14 1.52<br>T 0.235 0.255 5.97 6.47<br>U 0.000 0.050 0.00 1.27<br>V 0.045 - 1.15 -<br>Z - 0.080 - 2.04<br>**----- End of picture text -----**<br> **==> picture [245 x 66] intentionally omitted <==** **----- Start of picture text -----**<br> Pin Assignment<br>1 Main Terminal 1<br>2 Main Terminal 2<br>3 Gate<br>4 No Connection<br>**----- End of picture text -----**<br> ## **Ordering Information** **==> picture [245 x 39] intentionally omitted <==** **----- Start of picture text -----**<br> Device Package Shipping<br>TO−220AB<br>BTB12−600TW3G 1000 Units / Box<br>(Pb−Free)<br>**----- End of picture text -----**<br> **1.** Dimensioning and tolerancing per ansi y14.5m, 1982. **2.** Controlling dimension: inch. **3.** Dimension z defines a zone where all body and lead irregularities are allowed. **Disclaimer Notice -** Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at http://www.littelfuse.com/disclaimer-electronics. © 2021 Littelfuse, Inc. Specifications are subject to change without notice. Revised: GD. 02/18/21 **6**
Updated at June 8, 2026
Founded in 1927 and headquartered in Chicago, Illinois, Littelfuse is a premier global manufacturer of circuit protection, power control, and sensing technologies. Widely recognized for pioneering the first small, fast-acting protective fuse, the company has grown into an industry leader whose highly reliable components are essential to modern industrial, transportation, and consumer electronics applications worldwide. At the core of the Littelfuse portfolio is an expansive and industry-leading range of circuit protection solutions. This encompasses a massive selection of traditional fuses, fuse holders, and resettable PTC thermistor fuses designed to safely interrupt overcurrent conditions. To defend against electrical overstress, Littelfuse also provides advanced transient voltage suppression (TVS) technologies, including thousands of specialized TVS diodes, TVS varistors, and gas discharge tubes (GDTs) that ensure robust defense against voltage spikes and environmental hazards. Beyond its foundational protection components, Littelfuse manufactures a diverse array of discrete semiconductors, sensors, and switching devices. Engineers rely on their high-performance thyristors, including TRIACs and SCRs, alongside power-efficient Schottky diodes and MOSFETs for demanding power control applications. Complemented by precision proximity sensors and highly reliable reed and solid-state relays, Littelfuse delivers the critical building blocks required for secure, efficient, and complete system design.
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