BTA440Z-1200ATQ

**BTA440Z-1200AT 3Q Hi-Com Triac Rev.01 - 20 December 2024** 

**Product data sheet** 

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## **1. General description** 

Planar passivated high commutation three quadrant triac in a IITO3P package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. This "series AT" triac will commutate the full RMS current at the maximum rated junction temperature (Tj(max) = 150 °C) without the aid of a snubber. It is used in applications where "high junction operating temperature capability" is required. 

## **2. Features and benefits** 

- High current TRIAC 

- 3Q technology for improved noise immunity 

- High commutation capability with maximum false trigger immunity 

- High immunity to false turn-on by dV/dt 

- High junction operating temperature capability (Tj(max) = 150 °C) 

- High voltage capability 

- Least sensitive gate for highest noise immunity 

- Low thermal resistance 

- Planar passivated for voltage ruggedness and reliability 

- Triggering in three quadrants only 

- Insulated tab rated at 2500Vrms 

## **3. Applications** 

- Applications subject to high temperature (Tj(max) = 150 °C) 

- High current / high surge applications 

- High power / industrial controls - e.g. heating, motors, lighting 

## **4. Quick reference data** 

**Table 1. Quick reference data** 

|**Symbol**|**Parameter**||**Conditions**|**Conditions**|**Conditions**|**Conditions**|**Conditions**|**Notes**|**Values**|**Values**|**Values**|**Unit**|
|---|---|---|---|---|---|---|---|---|---|---|---|---|
|VDRM|repetitive peak of-state<br>voltage||||||||1200|||V|
|IT(RMS)|RMS on-state current||full sine wave; Tmb≤ 106 °C;<br>Fig. 1;Fig. 2;Fig. 3||||||40|||A|
||||||||||||||
|ITSM|non-repetitive peak on-<br>state current||full sine wave; Tj(init)= 25 °C; tp= 20 ms;<br>Fig. 4;Fig. 5||||||400|||A|
||||||||||||||
||||full sine wave; Tj(init)= 25 °C; tp= 16.7 ms||||||440|||A|
|Tj|operating junction<br>temperature||||||||-40 to 150|||°C|
|**Symbol**|**Parameter**||**Conditions**|||||**Notes **|**Min**|**Typ**|**Max**|**Unit**|
|**Static characteristics**|||||||||||||
|IGT|gate trigger current||VD= 12 V;<br>Tj= 25 °C;||IT= 0.1 A; T2+ G+;<br> Fig. 7||||-|-|75|mA|
||||VD= 12 V;<br>Tj= 25 °C;||IT= 0.1 A; T2+ G-;<br> Fig. 7||||-|-|75|mA|
||||VD= 12 V;<br>Tj= 25 °C;||IT= 0.1 A; T2- G-;<br> Fig. 7||||-|-|75|mA|
|IH|holding current||VD= 12 V;||Tj= 25 °C;||Fig. 9||-|-|80|mA|
|VT|on-state voltage||IT= 40 A; Tj= 25 °C;|||Fig. 10|||-|-|1.4|V|



**WeEn Semiconductors** 

**BTA440Z-1200AT 3Q Hi-Com Triac** 

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 Symbol Parameter Conditions  Notes Min Typ Max Unit<br>**----- End of picture text -----**<br>


|**Symbol**|**Parameter**|**Conditions**|**Conditions**|**Notes **|**Min**|**Typ**|**Max**|**Unit**|
|---|---|---|---|---|---|---|---|---|
||||||||||
|**Dynamic characteristics**|||||||||
|dVD/dt|rate of rise of of-state<br>voltage||VDM= 804 V; Tj= 125 °C; (VDM= 67% of<br>VDRM); exponential waveform;<br>gate open circuit||1500|-|-|V/μs|
||||VDM= 804 V; Tj= 150 °C; (VDM= 67% of<br>VDRM); exponential waveform;<br>gate open circuit||1000|-|-|V/μs|
|dIcom/dt|rate of change of<br>commutating current||VD= 400 V; Tj= 125 °C; IT(RMS)= 20 A;<br>dVcom/dt = 200 V/μs; gate open circuit;<br>Fig. 12||35|-|-|A/ms|
||||VD= 400 V; Tj= 125 °C; IT(RMS)= 20 A;<br>dVcom/dt = 10 V/μs; gate open circuit;<br>Fig. 12||180||-|A/ms|



## **5. Pinning information** 

**Table 2. Pinning information** 

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**----- Start of picture text -----**<br>
 Pin  Symbol  Description Simplified outline Graphic symbol<br>1  T1  main terminal 1<br>2  T2 main terminal 2 T2 T1<br>G<br>3  G gate sym051<br>mb  n.c. mounting base; isolated<br>1 2 3<br>IITO3P (SOT1292)<br>**----- End of picture text -----**<br>


## **6. Ordering information** 

**Table 3. Ordering information** 

|**Type number**|**Package**<br>**Name**|**Orderable part number **|**Packing**<br>**method**|**Small packing**<br> **quantity**|**Package**<br>**version**|**Package**<br>**issue date**|
|---|---|---|---|---|---|---|
|BTA440Z-1200AT|IITO3P|BTA440Z-1200ATQ|Tube|30|SOT1292|21-Jun-2017|



## **7. Marking** 

**Table 4. Marking codes** 

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Type number Marking codes<br>BTA440Z-1200AT BTA440Z<br>1200AT<br>**----- End of picture text -----**<br>


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**Product data sheet** 

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**BTA440Z-1200AT 3Q Hi-Com Triac** 

## **8. Limiting values** 

## **Table 5. Limiting values** 

_In accordance with the Absolute Maximum Rating System (IEC 60134)._ 

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Symbol Parameter Conditions Notes Values  Unit<br> VDRM  repetitive peak off-state voltage  1200  V<br>**----- End of picture text -----**<br>


|**Symbol**|**Parameter**|**Conditions**|**Conditions**|**Notes**|**Values**|**Unit**|
|---|---|---|---|---|---|---|
|VDRM|repetitive peak of-state voltage||||1200|V|
|VRRM|repetitive peak reverse voltage||||1200|V|
|IT(RMS)|RMS on-state current||full sine wave; Tmb≤ 106 °C;<br>Fig 1; Fig 2; Fig 3||40|A|
|ITSM|non-repetitive peak on-state<br>current||full sine wave; Tj(init)= 25 °C; tp= 20 ms;<br>Fig 4; Fig 5||400|A|
||||full sine wave; Tj(init)= 25 °C; tp= 16.7 ms||440|A|
|I<br>2t|I<br>2t for fusing||tP= 10 ms; SIN||800|A<br>2s|
|dIT/dt|rate of rise of on-state current||IG= 150 mA||150|A/μs|
|IGM|peak gate current||||8|A|
|PGM|peak gate power||tP= 25 us; Tj(init)= 25 °C||40|W|
|PG(AV)|average gate power||over any 20 ms period||1|W|
|Tstg|storage temperature||||-40 to 150|°C|
|Tj|operating junction<br>temperature||||-40 to 150|°C|



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Fig. 1.  RMS on-state current as a function of mounting   f = 50 Hz; Tmb = 106 °C<br>base temperature; maximum values  Fig. 2.  RMS on-state current as a function of surge<br>duration; maximum values<br>**----- End of picture text -----**<br>


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**3Q Hi-Com Triac** 

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conduction form<br>angle factor<br>(degrees) α<br>30 2.816<br>60 1.967<br>90 1.570 α<br>120 1.329<br>180 1.110<br>**----- End of picture text -----**<br>


α = conduction angle 

a = form factor = IT(RMS) / IT(AV) 

**Fig. 3.  Total power dissipation as a function of RMS on-state current; maximum values** 

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IT ITSM<br>t<br>T<br>Tj(init) = 25 °C max<br>f = 50 Hz<br> Fig. 4.  Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum<br>values<br>IT ITSM<br>t<br>T<br>Tj(init) = 25 °C max<br>**----- End of picture text -----**<br>


tp ≤ 20 ms 

(1) dIT/dt limit 

**Fig. 5.  Non-repetitive peak on-state current as a function of pulse duration; maximum values** 

BTA440Z-1200AT All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2024. All rights reserved **Product data sheet 20 December 2024 4 / 12** 

**Product data sheet** 

**WeEn Semiconductors** 

**BTA440Z-1200AT 3Q Hi-Com Triac** 

## **9. Thermal characteristics** 

**Table 6. Thermal characteristics** 

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Symbol Parameter Conditions Notes Min  Typ Max Unit<br>**----- End of picture text -----**<br>


|**Symbol**|**Parameter**|**Conditions**|**Conditions**|**Notes **|**Min**<br>|**Typ**|**Max**|**Unit**|
|---|---|---|---|---|---|---|---|---|
||||||||||
|Rth(j-mb)|thermal resistance from<br>junction to mounting base|full cycle;|Fig. 6||-<br>|-|0.85|K/W|
|Rth(j-a)|thermal resistance from<br>junction to ambient|in free air|||-<br>|50|-|K/W|



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P tp<br>δ =<br>T<br>tp t<br>T<br>**----- End of picture text -----**<br>


**Fig. 6.  Transient thermal impedance from junction to mounting base as a function of pulse duration** 

## **10. Isolation characteristics** 

**Table 7. Isolation characteristics** 

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Symbol Parameter Conditions Notes Min  Typ Max Unit<br>**----- End of picture text -----**<br>


|**Symbol**|**Parameter**|**Conditions**|**Notes **|**Min**<br>|**Typ**|**Max**|**Unit**|
|---|---|---|---|---|---|---|---|
|||||||||
|Visol(RMS)|RMS isolation voltage|from all terminals to external heatsink;<br>sinusoidal waveform; clean and dust free;<br>50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %; Tmb= 25 °C||-<br>|-|2500|V|



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## **11. Characteristics** 

**Table 8. Characteristics** 

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 Symbol Parameter Conditions Notes Min Typ Max Unit<br>**----- End of picture text -----**<br>


|**Symbol**|**Parameter**|**Conditions**|**Conditions**|**Conditions**|**Conditions**|**Conditions**|**Conditions**|**Notes **|**Min**|**Typ**|**Max**|**Unit**|
|---|---|---|---|---|---|---|---|---|---|---|---|---|
||||||||||||||
|**Static characteristics**|||||||||||||
|IGT|gate trigger current||VD= 12 V;<br>Tj= 25 °C;|IT= 0.1 A; T2+ G+;<br> Fig. 7|||||-|-|75|mA|
||||VD= 12 V;<br>Tj= 25 °C;|IT= 0.1 A; T2+ G-;<br> Fig. 7|||||-|-|75|mA|
||||VD= 12 V;<br>Tj= 25 °C;|IT= 0.1 A; T2- G-;<br> Fig. 7|||||-|-|75|mA|
|IL|latching current||VD= 12 V;<br>Tj= 25 °C;|IG= 0.1 A;<br> Fig. 8||T2+ G+;|||-|-|100|mA|
||||VD= 12 V;<br>Tj= 25 °C;|IG= 0.1 A;<br> Fig. 8||T2+ G-;|||-|-|200|mA|
||||VD= 12 V;<br>Tj= 25 °C;|IG= 0.1 A;<br> Fig. 8||T2- G-;|||-|-|100|mA|
|IH|holding current||VD= 12 V;|Tj= 25 °C;||Fig. 9|||-|-|80|mA|
|VT|on-state voltage||IT= 40 A; Tj= 25 °C;||Fig. 10||||-|-|1.4|V|
|VGT|gate trigger voltage||VD= 12 V; IT= 0.1 A; Tj= 25 °C;||||Fig. 11||-|-|1.2|V|
||||VD= 400 V; IT= 0.1 A; Tj= 150 °C||||||0.3|-|-|V|
|ID|of-state current||VD= 1200 V; Tj= 25 °C||||||-|-|10|μA|
||||VD= 1200 V; Tj= 125 °C||||||-|-|2|mA|
||||VD= 1200 V; Tj= 150 °C||||||-|-|5|mA|
|IR|reverse current||VR= 1200 V; Tj= 25 °C||||||-|-|10|μA|
||||VR= 1200 V; Tj= 125 °C||||||-|-|2|mA|
||||VR= 1200 V; Tj= 150 °C||||||-|-|5|mA|
|**Dynamic characteristics**|||||||||||||
|dVD/dt|rate of rise of of-state<br>voltage||VDM= 804 V; Tj= 125 °C; (VDM= 67% of<br>VDRM); exponential waveform;<br>gate open circuit||||||1500|-|-|V/μs|
||||VDM= 804 V; Tj= 150 °C; (VDM= 67% of<br>VDRM); exponential waveform;<br>gate open circuit||||||1000|-|-|V/μs|
|dIcom/dt|rate of change of<br>commutating current||VD= 400 V; Tj= 125 °C; IT(RMS)= 20 A;<br>dVcom/dt = 200 V/μs; gate open circuit;<br>Fig. 12||||||35|-|-|A/ms|
||||VD= 400 V; Tj= 125 °C; IT(RMS)= 20 A;<br>dVcom/dt = 10 V/μs; gate open circuit;<br>Fig. 12||||||180||-|A/ms|



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**3Q Hi-Com Triac** 

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**----- Start of picture text -----**<br>
(1) T2+ G+<br>(2) T2+ G-<br>(3) T2- G-<br>**----- End of picture text -----**<br>


**Fig. 8.  Normalized latching current as a function of junction temperature** 

**Fig. 7.  Normalized gate trigger current as a function of junction temperature** 

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**Fig. 9.  Normalized holding current as a function of junction temperature** 

Vo = 0.999 V; Rs = 0.0100 Ω 

(1) Tj = 150 °C; typical values 

(2) Tj = 150 °C; maximum values 

(3) Tj = 25 °C; maximum values **Fig. 10. On-state current as a function of on-state voltage** 

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**3Q Hi-Com Triac** 

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**Fig. 11. Normalized gate trigger voltage as a function of Fig. 12. Safe operating area junction temperature** 

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## **12. Package outline** 

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## **13. Legal information** 

## **Data sheet status** 

|**Document**<br>**status [1]**<br>**[2]**|**Product**<br>**status [3]**|**Definition**|
|---|---|---|
|Objective<br>[short] data<br>sheet|Development|This document contains data from<br>the objective specification for product<br>development.|
|Preliminary<br>[short] data<br>sheet|Qualification|This document contains data from the<br>preliminary specification.|
|Product<br>[short] data<br>sheet|Production|This document contains the product<br>specification.|



[1] Please consult the most recently issued document before initiating or completing a design. 

[2] The term 'short data sheet' is explained in section "Definitions". 

[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.ween-semi.com. 

## **Definitions** 

**Draft** — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. WeEn Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. 

**Short data sheet** — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local WeEn Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 

**Product specification** — The information and data provided in a Product data sheet shall define the specification of the product as agreed between WeEn Semiconductors and its customer, unless WeEn Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the WeEn Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. 

## **Disclaimers** 

**Limited warranty and liability** — Information in this document is believed to be accurate and reliable. However, WeEn Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. WeEn Semiconductors takes no responsibility for the content in this document if provided by an information source outside of WeEn Semiconductors. 

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**Quick reference data** — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 

**Applications** — Applications that are described herein for any of these products are for illustrative purposes only. WeEn Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 

Customers are responsible for the design and operation of their applications and products using WeEn Semiconductors products, and WeEn Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the WeEn Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. 

WeEn Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using WeEn Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). WeEn does not accept any liability in this respect. 

**Limiting values** — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. 

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In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without WeEn Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond WeEn Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies WeEn Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond WeEn Semiconductors’ standard warranty and WeEn Semiconductors’ product specifications. 

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**Translations** — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 

## **Trademarks** 

Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 

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## **14. Contents** 

**1.  General description .......................................................1 2.  Features and benefits ...................................................1 3.  Applications ...................................................................1 4.  Quick reference data .....................................................1 5.  Pinning information .......................................................2 6.  Ordering information .....................................................2 7.  Marking ...........................................................................2 8.  Limiting values ..............................................................3 9.  Thermal characteristics ................................................5 10.  Isolation Characteristics .............................................5 11.  Characteristics .............................................................6 12.  Package outline ...........................................................9 13.  Legal information ......................................................10 14.  Contents .....................................................................12** 

## **© WeEn Semiconductors Co., Ltd. 2024. All rights reserved** 

For more information, please visit: http://www.ween-semi.com For sales office addresses, please send an email to: salesaddresses@ween-semi.com **Date of release: 20 December 2024** 

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BTA440Z-1200AT **Product data sheet**