BTA12-700CWRG

Triac, 700 V, 12 A, TO-220AB, 1.5 V, 120 A, 35 mA

⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.

Manufacturer: STMICROELECTRONICS
Product type:
Peak Repetitive Off-State Voltage, Vdrm:700V; On State RMS Current IT(rms):12A; Triac Case Style:-; Gate Trigger Current Max (QI), Igt:35mA; Gate Trigger Voltage Max Vgt:1.5V; Peak Gate Power:
MSL: -
SVHC: No SVHC (25-Jun-2025)
No. of Pins: 3Pins
Product Range: -
Triac Case Style: TO-220AB
Thyristor Mounting: Through Hole
Holding Current Max: 35mA
On State RMS Current: 12A
Peak On State Voltage: 1.6V
Gate Trigger Voltage Max: 1.5V
Operating Temperature Max: 125°C
Peak Non Repetitive Surge Current: 120A
Peak Repetitive Off State Voltage: 700V

Delivery and price
Units per pack	1000
Price	0.875 €
Current stock	500+
Lead time	30 days

Datasheet

## kyqT] SGSMICROELECTRONICS -THOMSON 

## BTA12BTB12 BW/CWBW/CW 

## SNUBBERLESS TRIACS 

## FEATURES 

- s withoutHIGH COMMUTATION snubber : (didit)c > 12A/ms » HIGH SURGE SURGE CURRENT:: Itsm = 120A 120A s Vornm UP TO 800V UP TO 800V TO 800V 800V » BTA Family : INSULATING VOLTAGE = 2500VRms) VOLTAGE = 2500VRms) = 2500VRms) 2500VRms) (UL RECOGNIZED RECOGNIZED : E81734) E81734) 

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 snubber Ag Al<br>» HIGH SURGE SURGE CURRENT:: Itsm = 120A 120A<br>s Vornm UP TO 800V UP TO 800V TO 800V 800V @<br>» BTA Family :<br>INSULATING VOLTAGE = 2500VRms) VOLTAGE = 2500VRms) = 2500VRms) 2500VRms) =<br>(UL RECOGNIZED RECOGNIZED : E81734) E81734) V4<br>DESCRIPTION aY Gi<br>The BTA/BTB12 BW/CW triac family are high per- A<br>formance glass passivated chips technology.<br>The SNUBBERLESS™ concept offer suppression<br>of RC network and it is suitable for application TO220AB<br>such as phase control and static switching on in- (Plastic)<br>ductive or resistive load.<br>ABSOLUTE RATINGS (limiting values)<br>ee<br>IT(RMS) RMS on-state current 12 A<br>(360° conduction angle}<br>ITSM Non repetitive surge peak on-state current A<br>ae leva(Tj initial= 25°C) SSSSSC~*dfemtome || ei<br>di/di Critical rate of rise of on-state current Repetitive Als<br>Gate supply : 1G = 500mA digydt = 1A/ps F = 50 Hz<br>Non 100<br>Repetitive<br>Tstg Storage and operating junction temperature range - 40 to + 150 °C<br>Tj - 40 to+125 °C<br>Ti Maximum lead temperature for soldering during 10 s at 4.5 mm a ©;<br>from case<br>0 | oo | m0 | oo<br>VDRM Repetitive peak off-state voltage 700 800 Vv<br>VRRM Tj = 125°C<br>**----- End of picture text -----**<br>


March 1995 

15 

Me 7929237 OObS4bD 846 = 

BTA12 BW/CW/ BTB12 BW/CW 

## THERMAL RESISTANCES 

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ee<br>Rth (j-c) AC |Junction to case for 360° conduction angle | era | ts °Ciw<br>( F= 50 Hz) | ee | [ee]<br>**----- End of picture text -----**<br>


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GATE CHARACTERISTICS (maximum values)<br>PG (AV)= 1W Ss PGM = 10W (p= 20s) Iam =4A (tp=20ns) = VGM = 16V (tp= 20 ps).<br>ELECTRICAL CHARACTERISTICS<br>_ aw) ae<br>Pax<br>Tver [vote © mmo | mare | rom [wolf| sois | a  | v |<br>VD=VDRM_ IG = 500mA Tj=25°C TYP ps<br>dig/dt = 3A/us<br>a [rele<br>[wax ||<br>Pn [wax [ |e| |<br>I Vv Rated<br>dvidt * Linear slope up to Vp=67%V DAN Tj=126°C | min | 500 | 250 Vius<br>oneate oe open cre<br>| 720 | co |<br>(di/dt)c * | Without snubber Tj=125°C | win | a2 | 65. | A/ms<br>**----- End of picture text -----**<br>


* For either polarity of electrode A2 voltage with reference to electrode A1. 

2/5 a ges-THOMSON VF GRO EST2OMes 

MB 7929237 OOb5470 SLT 

BTA12 BW/CW/ BTB12 BW/CW 

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ORDERING INFORMATION<br>**----- End of picture text -----**<br>


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Package<br>a  -<br>(rouseBTA 2 | ao |x<br>a<br>Es ee ee es<br>(rsa a<br>Es ee ee ee<br>**----- End of picture text -----**<br>


Fig.1 : Maximum RMS power dissipation versus RMS on-state current (F=50Hz). (F=50Hz). (Curves are cut off by by (di/dt)c limitation) 

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Fig.1 : Maximum RMS power dissipation versus RMS Fig.2 : Correlation between maximum RMS power<br>on-state current (F=50Hz). (F=50Hz). dissipation and maximum allowable temperatures (Tamb<br>(Curves are cut off by by (di/dt)c limitation) and Tease) for different thermal resistances heatsink +<br>contact (BTA).<br>P (WwW) P (Ww) Tease (°C)<br>16 16 —T 85<br>el Lo OF 180 EE LN NTE F econ<br>-<br>Ol- 120 ia | p+ Ni<br>‘Loeefle  sODae teTT NAV(i A|<br>|| Lerer) ST| TT o tatt(te) — [LN] NAM TL<br>our a) S 126<br>012 3 4 5 6 7 B 9 1011 12 0 20 40 80 86 100 120 140<br>Fig.3 : Correlation between maximum RMS power Fig.4 : RMS on-state current versus case temperature.<br>dissipation and maximum allowable temperatures (Tamb<br>and Tcase) for different thermal resistances heatsink +<br>contact (BTB).<br>P (Ww) Tease (°C) IT(AMs) (A)<br>16 14<br>= —i 2" cw 12 BTB<br>14NNNN eee ppt ah ot<br>10Pot N Newes "0|| | IN\<br>he 108 | | |e \ | |<br>PSA A<br>t+‘NN waeTae| [PY<br>She<br>; | TNL, | foes ||<br>Peeto 20 40 60 486 [PNG] 100YX\\120 140 0—t20 40| 60| 89| 100| yf120 140<br>**----- End of picture text -----**<br>


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ai, SE THOS ON<br>**----- End of picture text -----**<br>


## we 7929237 0065471 4Tb = 

3/5 

BTA12 BW/CW/ BTB12 BW/CW 

Fig.5 : Relative variation of thermal impedance versus pulse duration. 

Fig.6 : Relative variation of gate trigger current and holding current versus junction temperature. 

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Zth/Rth<br>1See<br>ee i<br>TO hn a<br>mn | Pa Conoe<br>CH ce ATT<br>PACH HATH COTET<br>cETLL<br>EEEC<br>A A<br>PU ea TIM EE TT<br>0.01eC [pail] AIM LIME TTT UM |<br>1E3 1E-2 1E-1 1E+0 1641 1E+2 5E+2<br>**----- End of picture text -----**<br>


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Igtl Til -n{Tj<br>TglT}-25C] «= ihT=26°C)<br>25<br>“2MEET<br>PNT] TTT TT TT<br>SS<br>1 Sse tty |<br>ARSE<br>0.6 P|<br>0Lee TTT<br>-40-30-20-10 9 10 20 30 40 50 86 70 80 90 100110120190<br>**----- End of picture text -----**<br>


Fig.7 : Non Repetitive surge peak on-state current versus number of cycles. 

Fig.8 : Non repetitive surge peak on-state current for a sinusoidal pulse with width : t < 10ms, and corresponding value of [t. 

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120<br>ME LLL 226<br>a<br>20H<br>60 ali<br>M_<br>P<br>40 MK<br> rn]<br>20 i eIee nnas<br>number ot wee THT THI |TTT<br>1 10 100 1000<br>**----- End of picture text -----**<br>


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600<br>——eee<br>tty<br>| tree re=<br>TE<br>SSee SS<br>eee<br>a<br>PEPim<br>1 2 5 19<br>**----- End of picture text -----**<br>


Fig.9 : On-state characteristics (maximum values). 

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ity (A)<br>100 SSS SEE<br>T} initial =<br>900beenle |<br>10eb a<br>— == TI] max<br>Cf Ts Vito = 0.8B5V<br>*~L_IIE ff) Rt 0.0420<br>07 a a<br>9) 1 2 3 4 5 8<br>**----- End of picture text -----**<br>


## 4/5 ——____________Y— 

## ffS/ SGS-THOMSON-—____________—_______Meera Ron 

## Me 7929237 OObSY?e J3c 

BTA12 BW/CW/ BTB12 BW/CW 

## PACKAGE MECHANICAL DATA TO220AB Plastic 

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DIMENSIONS<br>| [_Milimeters] | inches |<br>A H | Min. | Max. | Min. | Max. |<br>>| g ’ | A | 10.20 | 10.50 | 0.401 | 0.413 |<br>I | B | 14.23 | 15.87 | [0.560] | 0.625 |<br>0.500<br>..Ope -H}- | c | 12.70 | 14.70 |<br>| | 0.579<br>° || [FT] 450 | | 0.178<br>| D | 585 | 685 | 0.230 | 0.270<br>VL | GWH | 254448 |  300482 |  0.0. 1 0076 | [0.190]  0.119 |<br>pitt Pt [355 [4.00 | 0.140 | 0.158 _<br>| ¢ t || ovob || 0351.15 || 0.651.39 || 0.0450.013 || [0.026] 0.055 _||<br>u | Mm | 210 | 2.70 | 0.082 | 0.107<br>: | oN [458 | 556 | 0.18 | 022 |<br>| o | 080 | 1.20 | 0.031 | 0.048 |<br>| P| 064 | 096 | 0.025 | 0.038 |<br>Cooling method : C<br>Marking : type number<br>Weight: 23g<br>Recommended torque value : 0.8 m.N.<br>Maximum torque value : 1 m.N.<br>**----- End of picture text -----**<br>


Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-T HOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 

$GS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. 

© 1995 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved. 

SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong- Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 

## ooo TTA SGS -THOMSON —_______E™5/5 

me 792923? 0065473 279

Updated at June 10, 2026

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