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BTA12-600SWRG
Triac, 600 V, 12 A, 1.5 V, 120 A, 15 mA
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- Manufacturer: STMICROELECTRONICS
- Product type:
- Peak Repetitive Off-State Voltage, Vdrm:600V; Gate Trigger Current Max, Igt:10mA; Current It av:-; On State RMS Current IT(rms):12A; Thyristor Case Style:TO-220AB; No. of Pins:3Pins; Peak Non
- MSL: -
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: -
- Thyristor Mounting: Through Hole
- Holding Current Max: 15mA
- On State RMS Current: 12A
- Thyristor Case Style: TO-220AB
- Average On State Current: -
- Gate Trigger Current Max: 10mA
- Gate Trigger Voltage Max: 1.5V
- Operating Temperature Max: 125°C
- Peak Non Repetitive Surge Current: 120A
- Peak Repetitive Off State Voltage: 600V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.406 € |
| Current stock | 100+ |
| Lead time | 30 days |
Datasheet
**BTA12, BTB12, T1205 T1210, T1235, T1250** Datasheet ## 12 A Snubberless™, logic level and standard Triacs **==> picture [131 x 181] intentionally omitted <==** **----- Start of picture text -----**<br> A2<br>G<br>A1<br>an A2 a<br>G G<br>A2 A2<br>A1 A1<br>TO-220AB TO-220AB Ins.<br>A2<br>A2 G<br>A1<br>D²PAK<br>**----- End of picture text -----**<br> ## **Features** - Medium current Triac - Low thermal resistance with clip bonding - Low thermal resistance insulation ceramic for insulated BTA - High commutation (4Q) or very high commutation (3Q) capability - BTA series UL1557 certified (file ref: 81734) - Packages are RoHS (2011/65/EU) compliant ## **Description** Available either in through-hole or surface mount packages, the BTA12, BTB12 and T12xx Triac series are suitable for general purpose mains power AC switching. They can be used as ON/OFF function in applications such as static relays, heating regulation or induction motor starting circuit. They are also recommended for phase control operations in light dimmers and appliance motors speed controllers. The Snubberless™ versions (W suffix and T12xx) are especially recommended for use on inductive loads, because of their high commutation performance. By using an internal ceramic pad, the Snubberless™ series provide an insulated tab (rated at 2500 VRMS) complying with UL standards (file reference: E81734). Logic Level BTA12-600TW and BTA12-600SW offer low holding current, ideal to design light dimmers for LED lamps. |**Product status link**<br>~~ea~~|**Product status link**<br>~~ea~~|**Product status link**<br>~~ea~~| |---|---|---| |BTA12||| |BTB12||| |T1205||| |T1210||| |T1235||| |T1250||| |||| |**Product summary**<br>~~Laas~~||| |**IT(RMS)**||12 A| |**VDRM/VRRM**||600 and 800 V| |**IGT(Snubberless)**|5 / 10 / 35 / 50 mA|5 / 10 / 35 / 50 mA| |**IGT(standard)**||25 / 50| **DS2115** - **Rev 12** - **February 2019** For further information contact your local STMicroelectronics sales office. www.st.com **BTA12, BTB12, T1205, T1210, T1235, T1250 Characteristics** **1** ## **Characteristics** **Table 1. Absolute maximum ratings (Tj = 25 °C unless otherwise stated)** |**Symbol**|**Parameter**|||**Value**|**Unit**| |---|---|---|---|---|---| |IT(RMS)|RMS on-state current (full sine wave)|TO-220AB, D²PAK|Tc= 105 °C|12|A| |||TO-220AB Ins.|Tc= 90 °C||| |ITSM|Non repetitive surge peak on-state current (full cycle, Tj<br>initial = 25 °C)|f = 50 Hz|t = 20 ms|120|A| |||f = 60 Hz|tp= 16.7 ms|126|| |I2t|I2t value for fusing||tp= 10 ms|78|A2s| |dl/dt|Critical rate of rise of on-state current IG= 2 x IGT, tr ≤<br>100 ns|f = 120 Hz|Tj= 125 °C|50|A/µs| |VDSM/VRSM|Non repetitive surge peak off-state voltage|tp= 10 ms|Tj= 25 °C|VDRM/ VRRM+<br>100|V| |IGM|Peak gate current|tp= 20 µs|Tj= 125 °C|4|A| |PG(AV)|Average gate power dissipation||Tj= 125 °C|1|W| |Tstg|Storage junction temperature range|||-40 to +150|°C| |Tj|Operating junction temperature range|||-40 to +125|°C| **Table 2. Electrical characteristics (Tj = 25 °C, unless otherwise specified) - Snubberless™ and logic level (3 quadrants)** |**Symbol**|**Parameter**|**Quadrant**||**T1205**<br>**BTB12-TW**<br>**BTA12-TW**|**T1210**<br>**BTB12-SW**<br>**BTA12-SW**|**T1235**<br>**BTB12-**<br>**CW**<br>**BTA12-CW**|**T1250**<br>**BTB12-**<br>**BW**<br>**BTA12-BW**|**Unit**| |---|---|---|---|---|---|---|---|---| |IGT (1)|VD= 12 V, RL= 30 Ω|I - II - III|Max.|5|10|35|50|mA| |VGT||I - II - III|Max.|1.3||||V| |VGD|VD= VDRM, RL= 3.3 kΩ, Tj= 125 °C|I - II - III|Min.|0.2||||V| |IH (2)|IT= 100 mA|I - II - III|Max.|10|15|35|50|mA| |IL (2)|IG= 1.2 x IGT|I - III|Max.|10|25|50|70|mA| |||II|Max.|15|30|60|80|| |dV/dt(2)|VD= 67% VDRM, gate open, Tj= 125 °C||Max.|20|40|500|1000|V/µs| |(dl/dt)c(2)|(dV/dt)c = 0.1 V/µs, Tj= 125 °C||Min.|3.5|6.5|||A/ms| ||(dV/dt)c = 10 V/µs, Tj= 125 °C||Min.|1.0|2.9|||| ||Without snubber, Tj= 125 °C||Min.|||6.5|12|| _1. Minimum IGT is guaranteed at 5 % of IGT max._ _2. For both polarities of A2 referenced to A1_ **DS2115** - **Rev 12** **page 2/16** **BTA12, BTB12, T1205, T1210, T1235, T1250 Characteristics** **Table 3. Electrical characteristics (Tj = 25 °C, unless otherwise specified) - Standard Triac (4 quadrants)** |**Sbl**|**Pt**|**Qdt**||**Value**|**Value**|**Uit**| |---|---|---|---|---|---|---| |**ymo**|**arameer**|**uaran**||**C**|**B**|**n**| |IGT (1)|VD= 12 V, RL= 30 Ω|I - II - III|Max.|25|50|mA| |||IV||50|100|| |VGT||All|Max.|1.3||V| |VGD|VD= VDRM, RL= 33 kΩ, Tj= 125 °C|All|Min.|0.2||V| |IH (2)|IT= 500 mA|I - II - III|Max.|25|50|mA| |IL|IG= 1.2 IGT|I - III - IV|Max.|40|50|mA| |||II||80|100|| |dV/dt(2)|VD= 67 % VDRMgate open, Tj= 125 °C||Min.|200|400|V/µs| |(dV/dt)c(2)|(dI/dt)c = 5.3 A/ms, Tj= 125 °C||Min.|5|10|V/µs| _1. Minimum IGT is guaranteed at 5 % of IGT max._ _2. For both polarities of A2 referenced to A1_ **Table 4. Static electrical characteristics** |**Symbol**|**Test conditions**|**Test conditions**|**Test conditions**|**Value**|**Unit**| |---|---|---|---|---|---| |VTM (1)|ITM= 17 A, tp= 380 µs|Tj= 25 °C|Max.|1.55|V| |VTO(1)|threshold on-state voltage|Tj= 125 °C|Max.|0.85|V| |RD(1)|Dynamic resistance|Tj= 125 °C|Max.|35|mΩ| |IDRMIRRM|VDRM= VRRM|Tj= 25 °C|Max.|5|µA| |||Tj= 125 °C|Max.|1|mA| _1. For both polarities of A2 referenced to A1_ **Table 5. Thermal resistance** |**Symbol**|**Parameter**|**Parameter**|||**Value**|**Unit**| |---|---|---|---|---|---|---| |Rth(j-c)|Max. junction to case thermal resistance (AC)||D2PAK / TO-220AB|Max.|1.4|°C/W| ||||TO-220AB insulated|Max.|2.3|| |Rth(j-a)|Junction to ambient|S = 2 cm²(1)|D²PAK|Typ.|45|°C/W| ||Junction to ambient||TO-220AB / TO-220AB insulated|Typ.|60|| _1. S = Copper surface under tab._ **DS2115** - **Rev 12** **page 3/16** **BTA12, BTB12, T1205, T1210, T1235, T1250 Characteristics (curves)** ## **1.1 Characteristics (curves)** **Figure 1. Maximum power dissipation versus on-state Figure 2. RMS on-state current versus case temperature RMS current (full cycle) (full cycle)** **==> picture [477 x 129] intentionally omitted <==** **----- Start of picture text -----**<br> 16 P(W) 14 IT(RMS)(A)<br>14 13 BTB /T 12<br>12<br>12 11 BTA<br>10<br>10 9<br>8<br>8 7<br>6<br>6 5<br>4 4<br>3<br>2 2<br>IT(RMS)(A) 1 TC( °C)<br>0 0<br>0 1 2 3 4 5 6 7 8 9 10 11 12 0 25 50 75 100 125<br>**----- End of picture text -----**<br> **==> picture [513 x 216] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 3. RMS on-state current versus ambient<br>Figure 4. Relative variation of thermal impedance versus<br>temperature (printed circuit board FR4, copper thickness:<br>pulse duration<br>35 μm) (full cycle)<br>3.5 IT(RMS)(A) 1E+0 K= [Zth/Rth []]<br>3.0 (S = 1 cmD2PAK2) Zth(j-c)<br>2.5 Zth(j-a)<br>2.0 1E-1<br>1.5<br>1.0<br>0.5 tP( s)<br>TC(°C ) 1E-2<br>0.0 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2<br>0 25 50 75 100 125<br>**----- End of picture text -----**<br> **DS2115** - **Rev 12** **page 4/16** **BTA12, BTB12, T1205, T1210, T1235, T1250 Characteristics (curves)** **Figure 5. On-state characteristics (maximum values)** **Figure 6. Surge peak on-state current versus number of cycles** **==> picture [222 x 129] intentionally omitted <==** **----- Start of picture text -----**<br> ITM(A)<br>100<br>Tj max.<br>Vto= 0.85V<br>Rd = 35 mΩ<br>T =j Tj max.<br>10 T = 25°Cj .<br>VTM (V)<br>1<br>0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0<br>**----- End of picture text -----**<br> **==> picture [220 x 127] intentionally omitted <==** **----- Start of picture text -----**<br> ITSM(A)<br>130<br>120<br>110<br>100 t=20ms<br>90 Non repetitive One cycle<br>80 Tj initial =25°C<br>70<br>60 Repetitive<br>50 TC= 90°C<br>40<br>30<br>20<br>10 Numb er of cycles<br>0<br>1 10 100 1000<br>**----- End of picture text -----**<br> **==> picture [513 x 231] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 8. Relative variation of gate trigger current holding<br>Figure 7. Non repetitive surge peak on-state current for a current and latching current versus junction temperature<br>sinusoidal pulse (typical values)<br>ITSM(A)<br>1000 dI/dt limitation:50A/µs Tj initial = 25°C 2.5 IGT, IH, IL[Tj] / IGT, IH, IL[Tj = 25 °C]<br>ITSM 2.0<br>IGT<br>1.5<br>100<br>1.0 IH & IL<br> for a sinusoidal pulse with width tP < 10 ms<br>tP(ms) 0.5<br>10<br>0.01 0.10 1.00 10.00 0.0 Tj(°C)<br>-40 -20 0 20 40 60 80 100 120 140<br>**----- End of picture text -----**<br> **DS2115** - **Rev 12** **page 5/16** **BTA12, BTB12, T1205, T1210, T1235, T1250 Characteristics (curves)** **Figure 9. Relative variation of critical rate of decrease of Figure 10. Relative variation of critical rate of decrease of main current versus (dV/dt)c (typical values) main current versus (dV/dt)c (typical values)(TW)** **==> picture [476 x 140] intentionally omitted <==** **----- Start of picture text -----**<br> (dI/dt)c [(dV/dt)c] / specified (dI/dt)c<br>(dI/dt)c [(dV/dt)c] / specified (dI/dt)c 5.0<br>2.8<br>4.5<br>2.4 4.0<br>TW, T1205<br>2.0 T1210/SW 3.5<br>C 3.0<br>1.6 B<br>2.5<br>T1235/T1250/CW/BW<br>1.2<br>2.0<br>0.8 1.5<br>1.0<br>0.4<br>(dV/dt)c(V/µs) 0.5<br>0.0 (dV/dt)c(V/µs)<br>0.0<br>0.1 1 .0 10.0 100.0<br>0.1 1.0 10.0 100.0<br>**----- End of picture text -----**<br> **==> picture [513 x 206] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 11. Relative variation of critical rate of decrease of Figure 12. D [2] PAK thermal resistance junction to ambient<br>main current versus junction temperature versus copper surface under tab<br>Rth(j-a) (°C/W)<br>6 (dl/dt)c [Tj] / (dl/dt)c [Tj specified] 80 D²PAK<br>70 Epoxy printed board FR4, copper thickness = 35 µm<br>5<br>60<br>4<br>50<br>3 40<br>2 30<br>20<br>1<br>Tj(°C) 10 SCu(cm²)<br>0<br>0 25 50 75 100 125 0<br>0 5 10 15 20 25 30 35 40<br>**----- End of picture text -----**<br> **DS2115** - **Rev 12** **page 6/16** **BTA12, BTB12, T1205, T1210, T1235, T1250 Package information** **2 Package information** In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: www.st.com. ECOPACK[®] is an ST trademark. ## **2.1 D²PAK package information** - ECOPACK2® compliant - Lead-free package leads finishing - Molding compound resin is halogen-free and meets UL standard level V0 ## **Figure 13. D²PAK package outline** **==> picture [320 x 293] intentionally omitted <==** **----- Start of picture text -----**<br> E A E1<br>c2 E2<br>1 2 3<br>b2<br>e<br>b Max resin gate protrusion: 0.5 mm (1)<br>G<br>A1<br>A2<br>A3<br>R<br>Gauge Plane<br>c<br>V2<br>L2<br>D1<br>D<br>H<br>D2<br>L3<br>L<br>**----- End of picture text -----**<br> - (1) Resin gate is accepted in each of position shown on the drawing, or their symmetrical. **DS2115** - **Rev 12** **page 7/16** **BTA12, BTB12, T1205, T1210, T1235, T1250 D²PAK package information** ## **Table 6. D²PAK package mechanical data** ||**Dimensions**|**Dimensions**|**Dimensions**|**Dimensions**|**Dimensions**|**Dimensions**| |---|---|---|---|---|---|---| |**Ref.**|**Millimeters**|||**Inches(1)**||| ||**Min.**|**Typ.**|**Max.**|**Min.**|**Typ.**|**Max.**| |A|4.30||4.60|0.1693||0.1811| |A1|2.49||2.69|0.0980||0.1059| |A2|0.03||0.23|0.0012||0.0091| |A3||0.25|||0.0098|| |b|0.70||0.93|0.0276||0.0366| |b2|1.25||1.7|0.0492||0.0669| |c|0.45||0.60|0.0177||0.0236| |c2|1.21||1.36|0.0476||0.0535| |D|8.95||9.35|0.3524||0.3681| |D1|7.50||8.00|0.2953||0.3150| |D2|1.30||1.70|0.0512||0.0669| |e|2.54|||0.1||| |E|10.00||10.28|0.3937||0.4047| |E1|8.30||8.70|0.3268||0.3425| |E2|6.85||7.25|0.2697||0.2854| |G|4.88||5.28|0.1921||0.2079| |H|15||15.85|0.5906||0.6240| |L|1.78||2.28|0.0701||0.0898| |L2|1.27||1.40|0.0500||0.0551| |L3|1.40||1.75|0.0551||0.0689| |R||0.40|||0.0157|| |V2|0°||8°|0°||8°| _1. Dimensions in inches are given for reference only_ **DS2115** - **Rev 12** **page 8/16** **BTA12, BTB12, T1205, T1210, T1235, T1250 D²PAK package information** ## **Figure 14. D²PAK recommended footprint (dimensions are in mm)** **==> picture [259 x 156] intentionally omitted <==** **----- Start of picture text -----**<br> 16.90<br>10.30 5.08<br>1.30<br>3.70<br>8.90<br>**----- End of picture text -----**<br> **DS2115** - **Rev 12** **page 9/16** **BTA12, BTB12, T1205, T1210, T1235, T1250 TO-220AB insulated and non insulated package information** ## **2.2 TO-220AB insulated package information** - Epoxy meets UL 94,V0 - Cooling method: by conduction (C) - Recommended torque value: 0.55 N·m - Maximum torque value: 0.70 N·m ## **Figure 15. TO-220AB insulated and non insulated package outline** **==> picture [418 x 429] intentionally omitted <==** **----- Start of picture text -----**<br> B C<br>b2<br>Resin gate 0.5 mm I<br>max. protusion [(1)]<br>L<br>F<br>A<br>I4<br>l3<br>c2<br>a1<br>l2<br>a2<br>M<br>c1<br>b1 Resin gate 0.5 mm<br>max. protusion [(1)]<br>e<br>**----- End of picture text -----**<br> (1)Resin gate position accepted in one of the two positions or in the symmetrical opposites. **DS2115** - **Rev 12** **page 10/16** **BTA12, BTB12, T1205, T1210, T1235, T1250 TO-220AB insulated and non insulated package information** **Table 7. TO-220AB insulated and non insulated package mechanical data** ||**Dimensions**|**Dimensions**|**Dimensions**|**Dimensions**|**Dimensions**|**Dimensions**| |---|---|---|---|---|---|---| |**Ref.**|**Millimeters**|||**Inches(1)**||| ||**Min.**|**Typ.**|**Max.**|**Min.**|**Typ.**|**Max.**| |A|15.20||15.90|0.5984||0.6260| |a1||3.75|||0.1476|| |a2|13.00||14.00|0.5118||0.5512| |B|10.00||10.40|0.3937||0.4094| |b1|0.61||0.88|0.0240||0.0346| |b2|1.23||1.32|0.0484||0.0520| |C|4.40||4.60|0.1732||0.1811| |c1|0.49||0.70|0.0193||0.0276| |c2|2.40||2.72|0.0945||0.1071| |e|2.40||2.70|0.0945||0.1063| |F|6.20||6.60|0.2441||0.2598| |I|3.73||3.88|0.1469||0.1528| |L|2.65||2.95|0.1043||0.1161| |I2|1.14||1.70|0.0449||0.0669| |I3|1.14||1.70|0.0449||0.0669| |I4|15.80|16.40|16.80|0.6220|0.6457|0.6614| |M||2.6|||0.1024|| _1. Inch dimensions are for reference only._ **DS2115** - **Rev 12** **page 11/16** **BTA12, BTB12, T1205, T1210, T1235, T1250 Ordering information** **3 Ordering information** **Figure 16. Ordering information scheme (BTA12 and BTB12 series)** **==> picture [322 x 215] intentionally omitted <==** **----- Start of picture text -----**<br> BT A 12 - 600 BW RG<br>Triac series<br>Insulation<br>A = insulated<br>B = non insulated<br>Current<br>12 = 12A<br>Voltage<br>600 = 600V<br>800 = 800V<br>Sensitivity and type<br>B = 50 mA standard BW = 50 mA Snubberless<br>C = 25 mA standard CW = 35 mA Snubberless<br>SW = 10 mA logic level TW = 5 mA logic level<br>Packing mode<br>RG = Tube<br>**----- End of picture text -----**<br> **Figure 17. Ordering information scheme (T12 series)** **==> picture [330 x 217] intentionally omitted <==** **----- Start of picture text -----**<br> T 12 35 - 600 G (-TR)<br>Triac series<br>Current<br>12 = 12 A<br>Sensitivity<br>50 = 50 mA<br>35 = 35 mA<br>10 = 10 mA<br>Voltage<br>600 or 6 = 600V<br>800 or 8 = 800V<br>Package<br>G = D PAK2<br>Packing mode<br>Blank =Tube<br>-TR =Tape and reel<br>**----- End of picture text -----**<br> **DS2115** - **Rev 12** **page 12/16** **BTA12, BTB12, T1205, T1210, T1235, T1250 Ordering information** ## **Table 8. Product selector** |**Pt b**|**Voltage (xxx)**|**Voltage (xxx)**|**Sitiit**|**T**|**Pk**| |---|---|---|---|---|---| |**ar numer**|**600**|**800**|**ensvy**|**ype**|**acage**| |BTB12-600C|X||25 mA|Standard|TO-220AB| |BTB12-600B|X||50 mA|Standard|TO-220AB| |BTB12-600TW|X||5 mA|SnubberlessTM|TO-220AB| |BTB12-600SW|X||10 mA|SnubberlessTM|TO-220AB| |BTB12-xxxCW|X|X|35 mA|SnubberlessTM|TO-220AB| |BTB12-600BW|X||50 mA|SnubberlessTM|TO-220AB| |BTA12-600C|X||25 mA|Standard|TO-220AB Ins.| |BTA12-xxxB|X|X|50 mA|Standard|TO-220AB Ins.| |BTA12-600TW|X||5 mA|SnubberlessTM|TO-220AB Ins.| |BTA12-xxxSW|X|X|10 mA|SnubberlessTM|TO-220AB Ins.| |BTA12-xxxCW|X|X|35 mA|SnubberlessTM|TO-220AB Ins.| |BTA12-xxxBW|X|X|50 mA|SnubberlessTM|TO-220AB Ins.| |T1205-600G|X||5 mA|SnubberlessTM|D²PAK| |T1210-6G|X||10 mA|SnubberlessTM|D²PAK| |T1210-800G||X|10 mA|SnubberlessTM|D²PAK| |T1235-xxxG|X|X|35 mA|SnubberlessTM|D²PAK| |T1250-600G|X||50 mA|SnubberlessTM|D²PAK| **DS2115** - **Rev 12** **page 13/16** **BTA12, BTB12, T1205, T1210, T1235, T1250 Ordering information** ## **Table 9. Ordering information** |**Order code**|**Marking**|**Package**|**Weight**|**Base qty.**|**Delivery mode**| |---|---|---|---|---|---| |BTA12-600BRG|BTA12-600B|TO-220AB Ins.|1.9 g|50|Tube| |BTA12-600BWRG|BTA12-600BW||||| |BTA12-600CRG|BTA12-600C||||| |BTA12-600CWRG|BTA12-600CW||||| |BTA12-600SWRG|BTA12-600SW||||| |BTA12-600TWRG|BTA12-600TW||||| |BTA12-800BRG|BTA12-800B||||| |BTA12-800BWRG|BTA12-800BW||||| |BTA12-800CWRG|BTA12-800CW||||| |BTA12-800SWRG|BTA12-800SW||||| |BTB12-600BRG|BTB12-600B|TO-220AB|||| |BTB12-600BWRG|BTB12-600BW||||| |BTB12-600CRG|BTB12-600C||||| |BTB12-600CWRG|BTB12-600CW||||| |BTB12-600SWRG|BTB12-600SW||||| |BTB12-600TWRG|BTB12-600TW||||| |BTB12-800CWRG|BTB12-800CW||||| |T1205-600G-TR|T1205-600G|D²PAK|1.38 g|1000|Tape and reel 13"| |T1210-6G-TR|T1210-6G||||| |T1210-800G-TR|T1210-800G||||| |T1235-600G-TR|T1235-600G||||| |T1235-800G-TR|T1235-800G||||| |T1250-600G-TR|T1250-600G||||| |T1210-6G|T1210-6G|||50|Tube| |T1235-600G|T1235-600G||||| **DS2115** - **Rev 12** **page 14/16** **BTA12, BTB12, T1205, T1210, T1235, T1250** ## **Table 10. Document revision history** |**Date**|**Revision**|**Changes**| |---|---|---| |Sep-2002|6A|Last update.| |15-Mar-2005|7|1. I2PAK package added.<br>2. TO-220AB delivery mode changed from bulk to tube.| |27-May-2005|8|T1210 added.| |28-Sep-2007|9|Reformatted to current standards. T1250 added.| |02-Feb-2017|10|Removed I²PAK package.<br>Updated Figure 7: "Non-repetitive surge peak on-state current" and Table 9: "Product selector" and<br>Table 10: "Ordering information".| |9-Aug-2018|11|Updated D²PAK package information andFigure 10. UpdatedSection Product status / summary.| |07-Feb-2019|12|Updated links syntax.| **DS2115** - **Rev 12** **page 15/16** **BTA12, BTB12, T1205, T1210, T1235, T1250** ## **IMPORTANT NOTICE – PLEASE READ CAREFULLY** STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2019 STMicroelectronics – All rights reserved **DS2115** - **Rev 12** **page 16/16**
Updated at June 10, 2026
STMicroelectronics is a global leader in the semiconductor industry, recognized for developing highly integrated, energy-efficient solutions that power modern electronics. With a strong focus on innovation, ST provides a comprehensive portfolio of microelectronics that address the demanding requirements of industrial, automotive, communications, and consumer applications. Our extensive selection of STMicroelectronics components is built around a robust lineup of discrete semiconductors and circuit protection devices. We offer a wide variety of single MOSFETs, Schottky diodes, and fast and ultrafast recovery rectifier diodes, designed to deliver exceptional efficiency and thermal performance in power management and conversion systems. For robust circuit protection, our inventory features hundreds of transient voltage suppressors and TVS diodes that safeguard sensitive electronic components against destructive voltage spikes. In addition to core power discretes like TRIACs, SCRs, bipolar transistors, and single IGBTs, our STMicroelectronics range includes specialized integrated passive filters and MEMS sensors. Furthermore, ST offers advanced integrated passive devices, such as baluns and RF filters, which utilize high-quality monolithic RF IPD processes on glass or high-resistance silicon substrates. These components provide competitive cost structures, reduced power losses, and simplified RFIC-to-antenna matching, ensuring optimal system performance and delivering the reliability required for next-generation wireless and power designs.
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