BT152B-400R,118

**10 December 2015** 

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## **IMPORTANT NOTICE** 

## **1.  Global joint venture starts operations as WeEn Semiconductors** 

Dear customer, 

As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset Management Co. Ltd established Bipolar Power joint venture (JV), **WeEn Semiconductors** , which will be used in future Bipolar Power documents together with new contact details. 

In this document where the previous NXP references remain, please use the new links as shown below. 

**WWW** - For www.nxp.com use www.ween-semi.com **Email** - For salesaddresses@nxp.com use salesaddresses@ween-semi.com 

For the copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) “[©] **NXP Semiconductors N.V.** _**{year}**_ **. All rights reserved** ” becomes “[©] **WeEn Semiconductors Co., Ltd.** _**{year}**_ **. All rights reserved** ” 

If you have any questions related to this document, please contact our nearest sales office via e- mail or phone (details via salesaddresses@ween-semi.com). 

Thank you for your cooperation and understanding, 

WeEn Semiconductors 

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## _**DISCRETE SEMICONDUCTORS**_ 

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DATA SHEET<br>**----- End of picture text -----**<br>


**BT152B series** Thyristors 

Product specification 

September 1997 

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**��� Semiconductors** 

**Product specification** 

**BT152B series** 

## **Thyristors** 

## **GENERAL DESCRIPTION** 

## **QUICK REFERENCE DATA** 

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||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|
|Glasspassivatedthyristorsinaplastic|SYMBOL|PARAMETER|MAX.|MAX.|MAX.|UNIT|
|envelope|suitable|for|surface|
|mounting,|intended|for|use|in|BT152B-|400R|600R|800R|
|applications|requiring|high|VDRM,|Repetitive peak off-state|450|650|800|V|
|bidirectional|blocking|voltage|VRRM|voltages|
|capability|and|high|thermal|cycling|IT(AV)|Average on-state current|13|13|13|A|
|performance.|Typical|applications|IT(RMS)|RMS on-state current|20|20|20|A|
|include|motor|control,|industrial|and|ITSM|Non-repetitive peak on-state|200|200|200|A|
|domestic|lighting,|heating|and|static|current|
|switching.|

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## **PINNING - SOT404** 

## **PIN CONFIGURATION** 

## **SYMBOL** 

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||||
|---|---|---|
|PIN|DESCRIPTION|
|mb|
|1|cathode|
|a|k|
|2|anode|
|3|gate|
|2|
|mb|anode|
|1|3|g|

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## **LIMITING VALUES** 

Limiting values in accordance with the Absolute Maximum System (IEC 134). 

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|---|---|---|---|---|---|---|---|---|---|---|---|
|SYMBOL|PARAMETER|CONDITIONS|MIN.|MAX.|UNIT|
|-400R|-600R|-800R|
|VDRM|Repetitive peak off-state|-|450|[1]|650|[1]|800|V|
|voltages|
|IT(AV)|Average on-state current|half sine wave; Tmb|≤ 103 ˚C|-|13|A|
|IT(RMS)|RMS on-state current|all conduction angles|-|20|A|
|ITSM|Non-repetitive peak|half sine wave; Tj = 25 ˚C prior to|
|on-state current|surge|
|t = 10 ms|-|200|A|
|t = 8.3 ms|-|220|A|
|I|[2]|t|I|[2]|t for fusing|t = 10 ms|-|200|A|[2]|s|
|dIT/dt|Repetitive rate of rise of|ITM = 50 A; IG = 0.2 A;|-|200|A/μs|
|on-state current after|dIG/dt = 0.2 A/μs|
|triggering|
|IGM|Peak gate current|-|5|A|
|VGM|Peak gate voltage|-|5|V|
|VRGM|Peak reverse gate voltage|-|5|V|
|PGM|Peak gate power|-|20|W|
|PG(AV)|Average gate power|over any 20 ms period|-|0.5|W|
|Tstg|Storage temperature|-40|150|˚C|
|Tj|Operating junction|-|125|˚C|
|temperature|

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**1** Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may switch to the on-state. The rate of rise of current should not exceed 15 A/μs. 

September 1997 

Rev 1.100 

1 

��� Semiconductors 

Product specification 

## Thyristors 

## BT152B series 

## **THERMAL RESISTANCES** 

||**SYMBOL**<br>**PARAMETER**<br>**CONDITIONS**<br>**MIN.**<br>**TYP.**<br>**MAX.**<br>**UNIT**<br>Rth j-mb<br>Thermal resistance<br>-<br>-<br>1.1<br>K/W<br>junction to mounting base<br>Rth j-a<br>Thermal resistance<br>minimum footprint, FR4 board<br>-<br>55<br>-<br>K/W<br>junction to ambient|
|---|---|



## **STATIC CHARACTERISTICS** 

T = 25 ˚C unless otherwise stated j 

||**SYMBOL**<br>**PARAMETER**<br>**CONDITIONS**<br>**MIN.**<br>**TYP.**<br>**MAX.**<br>**UNIT**<br>IGT<br>Gate trigger current<br>VD= 12 V; IT= 0.1 A<br>-<br>3<br>32<br>mA<br>IL<br>Latching current<br>VD= 12 V; IGT= 0.1 A<br>-<br>25<br>80<br>mA<br>IH<br>Holding current<br>VD= 12 V; IGT= 0.1 A<br>-<br>15<br>60<br>mA<br>VT<br>On-state voltage<br>IT= 40 A<br>-<br>1.4<br>1.75<br>V<br>VGT<br>Gate trigger voltage<br>VD= 12 V; IT= 0.1 A<br>-<br>0.6<br>1.5<br>V<br>VD= VDRM(max); IT= 0.1 A; Tj= 125 ˚C<br>0.25<br>0.4<br>-<br>V<br>ID, IR<br>Off-state leakage current<br>VD= VDRM(max); VR= VRRM(max); Tj= 125 ˚C<br>-<br>0.2<br>1.0<br>mA|
|---|---|



## **DYNAMIC CHARACTERISTICS** 

Tj = 25 ˚C unless otherwise stated 

|**SYMBOL**<br>**PARAMETER**|**SYMBOL**<br>**PARAMETER**|**SYMBOL**<br>**PARAMETER**|**SYMBOL**<br>**PARAMETER**|**SYMBOL**<br>**PARAMETER**||**CONDITIONS**|||**MIN.**|**MIN.**|**MIN.**||**TYP.**|**TYP.**|**TYP.**||**MAX.**|**MAX.**|**MAX.**||**UNIT**|**UNIT**|**UNIT**|||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|dVD/dt||Critical rate of rise<br>off-state voltage|||of|VDM= 67% VDRM(max); Tj= 125 ˚C;<br>exponential waveform gate open circuit||||200||||300||||-|||V/μs|||||
|tgt||Gate controlled turn-on<br>time||||VD= VDRM(max); IG= 0.1 A; dIG/dt = 5 A/μs;<br>ITM= 40 A||||-||||2||||-||||μs||||
|tq||Circuit commutated<br>turn-off time||||VD= 67% VDRM(max); Tj= 125 ˚C;<br>ITM= 50 A; VR= 25 V; dITM/dt = 30 A/μs;||||-||||70||||-||||μs||||
|||||||dVD/dt = 50 V/μs; RGK= 100Ω||||||||||||||||||||



September 1997 

Rev 1.100 

2 

��� Semiconductors 

Product specification 

## Thyristors 

## BT152B series 

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25 Ptot / W BT152 Tmb(max) / C97.5 250 ITSM / A BT152<br>conductionangle formfactor IT ITSM<br>degrees a a = 1.57<br>20 30 60 4 2.8 1.9 103 200 T time<br>90120 2.21.9 2.2 Tj initial =  25 C max<br>15 180 1.57 108.5 150<br>2.8<br>4<br>10 114 100<br>5 119.5 50<br>0 0 5 10 15125 01 10 100 1000<br>IT(AV) / A Number of half cycles at 50Hz<br>Fig.1.  Maximum on-state dissipation, Ptot, versus Fig.4.   Maximum permissible non-repetitive peak<br>average on-state current, IT(AV), where on-state current ITSM, versus number of cycles, for<br>a = form factor = IT(RMS)/ IT(AV). sinusoidal currents, f = 50 Hz.<br>**----- End of picture text -----**<br>


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ITSM / A BT152<br>1000<br>dI  /dt limit T<br>100<br>I T I TSM<br>T time<br>Tj initial =  25 C max<br>10<br>10us 100us 1ms 10ms<br>T / s<br>**----- End of picture text -----**<br>


Fig.2.   Maximum permissible non-repetitive peak on-state current ITSM, versus pulse width tp, for sinusoidal currents, tp ≤ 10ms. 

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50 IT(RMS) / A BT152<br>40<br>30<br>20<br>10<br>0<br>0.01 0.1 1 10<br>surge duration / s<br>**----- End of picture text -----**<br>


Fig.5.   Maximum permissible repetitive rms on-state current IT(RMS), versus surge duration, for sinusoidal currents, f = 50 Hz; Tmb ≤ 103˚C. 

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IT(RMS) / A BT152<br>25<br>103 C<br>20<br>15<br>10<br>5<br>0<br>-50 0 50 100 150<br>Tmb / C<br>Fig.3.  Maximum permissible rms current IT(RMS) ,<br>versus mounting base temperature Tmb.<br>**----- End of picture text -----**<br>


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VGT(Tj)<br>1.6 VGT(25 C) BT151<br>1.4<br>1.2<br>1<br>0.8<br>0.6<br>0.4<br>-50 0 50 100 150<br>Tj / C<br>Fig.6.  Normalised gate trigger voltage<br>VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.<br>**----- End of picture text -----**<br>


September 1997 

Rev 1.100 

3 

��� Semiconductors 

Product specification 

## Thyristors 

## BT152B series 

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IGT(Tj) IT / A BT152<br>IGT(25 C) BT152 50<br>3 Tj = 125 C<br>Tj = 25 C<br>2.5 40 Vo = 1.12 V<br>Rs = 0.015 ohms<br>2 30 typ max<br>1.5<br>20<br>1<br>10<br>0.5<br>0 0<br>-50 0 50 100 150 0 0.5 1 1.5 2<br>Tj / C VT / V<br>Fig.7.   Normalised gate trigger current Fig.10.  Typical and maximum on-state characteristic.<br>IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.<br>**----- End of picture text -----**<br>


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ILIL(25 C(Tj) ) BT145 10 Zth j-mb (K/W) BT152<br>3<br>2.5 1<br>2<br>0.1<br>1.5<br>1 P D t p<br>0.01<br>0.5 t<br>0 0.001<br>-50 0 50 100 150 10us 0.1ms 1ms 10ms 0.1s 1s 10s<br>Tj / C tp / s<br>Fig.8.   Normalised latching current IL(Tj)/ IL(25˚C), Fig.11.  Transient thermal impedance Zth j-mb, versus<br>versus junction temperature Tj. pulse width tp.<br>**----- End of picture text -----**<br>


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IH(Tj)<br>IH(25 C) BT152<br>3<br>2.5<br>2<br>1.5<br>1<br>0.5<br>0<br>-50 0 50 100 150<br>Tj / C<br>Fig.9.   Normalised holding current IH(Tj)/ IH(25˚C),<br>versus junction temperature Tj.<br>**----- End of picture text -----**<br>


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10000 dVD/dt (V/us)<br>RGK = 100 Ohms<br>1000<br>gate open circuit<br>100<br>10<br>0 50 100 150<br>Tj / C<br>Fig.12.  Typical, critical rate of rise of off-state voltage,<br>dVD/dt versus junction temperature Tj.<br>**----- End of picture text -----**<br>


September 1997 

Rev 1.100 

4 

��� Semiconductors 

Product specification 

## Thyristors 

## BT152B series 

## **MECHANICAL DATA** 

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Dimensions in mm 10.3 max 4.5 max<br>1.4 max<br>Net Mass: 1.4 g<br>11 max<br>15.4<br>2.5<br>0.85 max<br>0.5<br>(x2)<br>2.54 (x2)<br>Fig.13.  SOT404 : centre pin connected to mounting base.<br>**----- End of picture text -----**<br>


## **Notes** 

## 1. Epoxy meets UL94 V0 at 1/8". 

## **MOUNTING INSTRUCTIONS** 

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Dimensions in mm<br>11.5<br>9.0<br>17.5<br>2.0<br>3.8<br>5.08<br>**----- End of picture text -----**<br>


Fig.14.  SOT404 : minimum pad sizes for surface mounting. 

## **Notes** 

1. Plastic meets UL94 V0 at 1/8". 

September 1997 

Rev 1.100 

5 

NXP Semiconductors 

## Legal information 

## **DATA SHEET STATUS** 

|**DATA SHEET STATUS**|||
|---|---|---|
|**DOCUMENT**<br>**STATUS**(1)|**PRODUCT**<br>**STATUS**(2)|**DEFINITION**|
|Objective data sheet|Development|This document contains data from the objective specification for product<br>development.|
|Preliminarydata sheet|Qualification|This document contains data from the preliminaryspecification.|
|Product data sheet|Production|This document contains the product specification.|



## **Notes** 

1. Please consult the most recently issued document before initiating or completing a design. 

2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 

## **DEFINITIONS** 

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## **DISCLAIMERS** 

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NXP Semiconductors 

## Legal information 

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**Limiting values** ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. 

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This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the content, except for the legal definitions and disclaimers. 

## **Contact information** 

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## © NXP B.V. 2011 

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