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BT151S-650L,118
Thyristor, 650 V, 5 mA, 7.5 A, 12 A, TO-252 (DPAK), 3 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: WEEN SEMICONDUCTORS
- Product type: Thyristors - SCRs
- MSL: MSL 1 - Unlimited
- SVHC: To Be Advised
- No. of Pins: 3Pins
- Product Range: BT151S
- Thyristor Mounting: Surface Mount
- Holding Current Max: 20mA
- On State RMS Current: 12A
- Thyristor Case Style: TO-252 (DPAK)
- Average On State Current: 7.5A
- Gate Trigger Current Max: 5mA
- Gate Trigger Voltage Max: 1.5V
- Operating Temperature Max: 125°C
- Peak Non Repetitive Surge Current: 120A
- Peak Repetitive Off State Voltage: 650V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.249 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
**10 December 2015**
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## **IMPORTANT NOTICE**
## **1. Global joint venture starts operations as WeEn Semiconductors**
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset Management Co. Ltd established Bipolar Power joint venture (JV), **WeEn Semiconductors** , which will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown below.
**WWW** - For www.nxp.com use www.ween-semi.com **Email** - For salesaddresses@nxp.com use salesaddresses@ween-semi.com
For the copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) “[©] **NXP Semiconductors N.V.** _**{year}**_ **. All rights reserved** ” becomes “[©] **WeEn Semiconductors Co., Ltd.** _**{year}**_ **. All rights reserved** ”
If you have any questions related to this document, please contact our nearest sales office via e- mail or phone (details via salesaddresses@ween-semi.com).
Thank you for your cooperation and understanding,
WeEn Semiconductors
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## **BT151S series L and R**
## **Thyristors**
**Rev. 05 — 9 October 2006**
## **Product data sheet**
## **1.**
## **1.1 General description**
Passivated thyristors in a SOT428 plastic package.
## **1.2 Features**
I High thermal cycling performance
I Surface-mounted package
I High bidirectional blocking voltage capability
## **1.3 Applications**
I Motor control I Ignition circuits
I Static switching
I Protection circuits
## **1.4 Quick reference data**
I VDRM ≤ 500 V (BT151S-500L/R) I VRRM ≤ 500 V (BT151S-500L/R) I VDRM ≤ 650 V (BT151S-650L/R) I VRRM ≤ 650 V (BT151S-650L/R) I VDRM ≤ 800 V (BT151S-800R) I VRRM ≤ 800 V (BT151S-800R)
I ITSM ≤ 120 A (t = 10 ms)
I IT(RMS) ≤ 12 A
I IT(AV) ≤ 7.5 A
I IGT ≤ 5 mA (BT151S series L)
I IGT ≤ 15 mA (BT151S series R)
## **2. Pinning information**
|**Table**|**1.**|**Pinning**||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|**Pin**||**Description**|**Simplifed outline**|||||||**Symbol**||||
|1<br>2||cathode (K)<br>anode (A)|||mb|||||A|G||K|
|3||gate (G)||||||||sym037||||
|mb||mounting base; connected to anode||||||||||||
|||||||||||||||
||||||1|2|3|||||||
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SOT428 (DPAK)<br>**----- End of picture text -----**<br>
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**BT151S series L and R**
**NXP Semiconductors**
**Thyristors**
## **3. Ordering information**
## **Table 2. Ordering information**
|**Type number**|**Package**|**Package**|**Package**|
|---|---|---|---|
||**Name**|**Description**|**Version**|
|BT151S-500L|DPAK<br>plastic single-ended surface-mounted package; 3 leads (one lead cropped) SOT428|||
|BT151S-500R||||
|BT151S-650L||||
|BT151S-650R||||
|BT151S-800R||||
## **4. Limiting values**
## **Table 3. Limiting values**
In accordance with the Absolute Maximum Rating System (IEC 60134).
|**Symbol**<br>**Parameter**|**Conditions**<br>**Min**<br>**Max**<br>**Unit**|
|---|---|
|VDRM<br>repetitive peak off-state voltage|BT151S-500L; BT151S-500R<br>[1] -<br>500<br>V|
||BT151S-650L; BT151S-650R<br>[1] -<br>650<br>V|
||BT151S-800R<br>-<br>800<br>V|
|VRRM<br>repetitive peak reverse voltage|BT151S-500L; BT151S-500R<br>[1] -<br>500<br>V|
||BT151S-650L; BT151S-650R<br>[1] -<br>650<br>V|
||BT151S-800R<br>-<br>800<br>V|
|IT(AV)<br>average on-state current|half sine wave; Tmb≤103°C;<br>see<br>Figure<br>1<br>-<br>7.5<br>A|
|IT(RMS)<br>RMS on-state current|all conduction angles; see<br>Figure<br>4<br>and<br>5<br>-<br>12<br>A|
|ITSM<br>non-repetitive peak on-state<br>current|half sine wave; Tj= 25°C prior to<br>surge; see<br>Figure<br>2and<br>3|
||t = 10 ms<br>-<br>120<br>A|
||t = 8.3 ms<br>-<br>132<br>A|
|I2t<br>I2t for fusing|t = 10 ms<br>-<br>72<br>A2s|
|dIT/dt<br>rate of rise of on-state current|ITM= 20 A; IG= 50 mA;<br>dIG/dt = 50 mA/µs<br>-<br>50<br>A/µs|
|IGM<br>peak gate current|-<br>2<br>A|
|VRGM<br>peak reverse gate voltage|-<br>5<br>V|
|PGM<br>peak gate power|-<br>5<br>W|
|PG(AV)<br>average gate power|over any 20 ms period<br>-<br>0.5<br>W|
|Tstg<br>storage temperature|−40<br>+150<br>°C|
|Tj<br>junction temperature|-<br>125<br>°C|
[1] Although not recommended, off-state voltages up to 800 V may be applied without damage, but the thyristor may switch to the on-state. The rate of rise of current should not exceed 15A/µs.
© NXP B.V. 2006. All rights reserved.
BT151S_SER_L_R_5
**Rev. 05 — 9 October 2006**
**Product data sheet**
**2 of 13**
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**NXP Semiconductors**
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**----- Start of picture text -----**<br>
001aab019<br>15 98<br>a =<br>Ptot 1.57 Tmb(max)<br>(W) (°C)<br>1.9<br>2.2<br>10 107<br>2.8<br>4<br>conduction form<br>angle factor<br>5 (degrees) a 116<br>30 4<br>60 2.8<br>90 2.2 α<br>120 1.9<br>180 1.57<br>0 125<br>0 2 4 6 8<br>IT(AV) (A)<br>**----- End of picture text -----**<br>
Form factor a = IT(RMS)/IT(AV)
**Fig 1. Total power dissipation as a function of average on-state current; maximum values**
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**----- Start of picture text -----**<br>
001aaa957<br>160<br> ITSM IT ITSM<br>(A)<br>120<br>tp t<br>Tj initial = 25 °C max<br>80<br>40<br>0<br>1 10 10 [2] 10 [3]<br>n<br>**----- End of picture text -----**<br>
f = 50 Hz
**Fig 2. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values**
© NXP B.V. 2006. All rights reserved.
BT151S_SER_L_R_5
**Rev. 05 — 9 October 2006**
**Product data sheet**
**3 of 13**
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**----- Start of picture text -----**<br>
001aaa956<br>10 [3]<br>ITSM dlT/dt limit<br>(A)<br>10 [2]<br>IT ITSM<br>tp t<br>Tj initial = 25 °C max<br>10<br>10 [−][5] 10 [−][4] 10 [−][3] 10 [−][2]<br>tp (s)<br>**----- End of picture text -----**<br>
tp ≤ 10 ms **Fig 3. Non-repetitive peak on-state current as a function of pulse width for sinusoidal currents; maximum values**
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**----- Start of picture text -----**<br>
001aaa954<br>25<br>IT(RMS)<br>(A)<br>20<br>15<br>10<br>5<br>0<br>10 [−][2] 10 [−][1] 1 10<br>surge duration (s)<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
001aaa998<br>16<br>IT(RMS)<br>(A)<br>12<br>8<br>4<br>0<br>−50 0 50 100 150<br>Tmb (°C)<br>**----- End of picture text -----**<br>
f = 50 Hz; Tmb ≤ 103 °C
**Fig 4. RMS on-state current as a function of surge duration; maximum values**
**Fig 5. RMS on-state current as a function of mounting base temperature; maximum values**
© NXP B.V. 2006. All rights reserved.
BT151S_SER_L_R_5
**Rev. 05 — 9 October 2006**
**Product data sheet**
**4 of 13**
**BT151S series L and R**
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**Thyristors**
## **5. Thermal characteristics**
## **Table 4. Thermal characteristics**
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Symbol Parameter Conditions Min Typ Max Unit<br>Rth(j-mb) thermal resistance from junction to see Figure 6 - - 1.8 K/W<br>mounting base<br>Rth(j-a) thermal resistance from junction to mounted on an FR4 - 75 - K/W<br>ambient printed-circuit board; see<br>Figure 14<br>001aaa963<br>10<br>Zth(j-mb)<br>(K/W)<br>1<br>10 [−][1]<br>P δ = tp<br>T<br>10 [−][2]<br>tp t<br>T<br>10 [−][3]<br>10 [−][5] 10 [−][4] 10 [−][3] 10 [−][2] 10 [−][1] 1 10<br>tp (s)<br>Fig 6. Transient thermal impedance from junction to mounting base as a function of pulse width<br>**----- End of picture text -----**<br>
© NXP B.V. 2006. All rights reserved.
BT151S_SER_L_R_5
**Rev. 05 — 9 October 2006**
**Product data sheet**
**5 of 13**
**BT151S series L and R**
**NXP Semiconductors**
**Thyristors**
## **6. Characteristics**
**Table 5. Characteristics** Tj = 25 °C unless otherwise stated.
|**Symbol**<br>**Parameter**|**Conditions**<br>**Min**<br>**Typ**<br>**Max**<br>**Unit**|
|---|---|
|**Static characteristics**||
|IGT<br>gate trigger current|VD= 12 V; IT= 100 mA; see<br>Figure<br>8|
||BT151S-500L<br>-<br>2<br>5<br>mA|
||BT151S-500R<br>-<br>2<br>15<br>mA|
||BT151S-650L<br>-<br>2<br>5<br>mA|
||BT151S-650R<br>-<br>2<br>15<br>mA|
||BT151S-800R<br>-<br>2<br>15<br>mA|
|IL<br>latching current|VD= 12 V; IGT= 100 mA; see<br>Figure<br>10<br>-<br>10<br>40<br>mA|
|IH<br>holding current|VD= 12 V; IGT= 100 mA; see<br>Figure<br>11<br>-<br>7<br>20<br>mA|
|VT<br>on-state voltage|IT= 23 A; see<br>Figure<br>9<br>-<br>1.4<br>1.75<br>V|
|VGT<br>gate trigger voltage|IT= 100 mA; VD= 12 V; see<br>Figure<br>7<br>-<br>0.6<br>1.5<br>V|
||IT= 100 mA; VD= VDRM(max);<br>Tj= 125°C<br>0.25<br>0.4<br>-<br>V|
|ID<br>off-state current|VD= VDRM(max); Tj= 125°C<br>-<br>0.1<br>0.5<br>mA|
|IR<br>reverse current|VR= VRRM(max); Tj= 125°C<br>-<br>0.1<br>0.5<br>mA|
|**Dynamic characteristics**||
|dVD/dt<br>rate of rise of off-state<br>voltage|VDM= 0.67×VDRM(max); Tj= 125°C;<br>exponential waveform; see<br>Figure<br>12|
||RGK= 100Ω<br>200<br>1000<br>-<br>V/µs|
||gate open circuit<br>50<br>130<br>-<br>V/µs|
|tgt<br>gate-controlled turn-on<br>time|ITM= 40 A; VD= VDRM(max);<br>IG= 100 mA; dIG/dt = 5 A/µs<br>-<br>2<br>-<br>µs|
|tq<br>commutated turn-off<br>time|VDM= 0.67×VDRM(max); Tj= 125°C;<br>ITM= 20 A; VR= 25 V;<br>(dIT/dt)M= 30 A/µs; dVD/dt = 50 V/µs;<br>RGK= 100Ω<br>-<br>70<br>-<br>µs|
© NXP B.V. 2006. All rights reserved.
BT151S_SER_L_R_5
**Rev. 05 — 9 October 2006**
**Product data sheet**
**6 of 13**
**BT151S series L and R**
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**----- Start of picture text -----**<br>
001aaa953<br>1.6<br>VGT<br>VGT(25°C)<br>1.2<br>0.8<br>0.4<br>−50 0 50 100 150<br>Tj (°C)<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
001aaa952<br>3<br>IGT<br>IGT(25°C)<br>2<br>1<br>0<br>−50 0 50 100 150<br>Tj (°C)<br>**----- End of picture text -----**<br>
**Fig 7. Normalized gate trigger voltage as a function of Fig 8. Normalized gate trigger current as a function of junction temperature junction temperature**
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**----- Start of picture text -----**<br>
001aaa959<br>30<br>IT<br>(A)<br>20<br>(1) (2) (3)<br>10<br>0<br>0 0.5 1 1.5 2<br>VT (V)<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
001aaa951<br>3<br>IL<br>IL(25°C)<br>2<br>1<br>0<br>−50 0 50 100 150<br>Tj (°C)<br>**----- End of picture text -----**<br>
Vo = 1.06 V
Rs = 0.0304 Ω
- (1) Tj = 125 °C; typical values
- (2) Tj = 125 °C; maximum values
- (3) Tj = 25 °C; maximum values
**Fig 9. On-state current as a function of on-state voltage**
**Fig 10. Normalized latching current as a function of junction temperature**
© NXP B.V. 2006. All rights reserved.
BT151S_SER_L_R_5
**Rev. 05 — 9 October 2006**
**Product data sheet**
**7 of 13**
**BT151S series L and R**
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**----- Start of picture text -----**<br>
001aaa950<br>3<br>IH<br>IH(25°C)<br>2<br>1<br>0<br>−50 0 50 100 150<br>Tj (°C)<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
001aaa949<br>10 [4]<br>dVD/dt<br>(V/µs)<br>(1)<br>10 [3]<br>(2)<br>10 [2]<br>10<br>0 50 100 150<br>Tj (°C)<br>**----- End of picture text -----**<br>
## (1) RGK = 100 Ω
(2) Gate open circuit
**Fig 11. Normalized holding current as a function of junction temperature**
**Fig 12. Critical rate of rise of off-state voltage as a function of junction temperature; minimum values**
© NXP B.V. 2006. All rights reserved.
BT151S_SER_L_R_5 **Product data sheet**
**Rev. 05 — 9 October 2006**
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## **7. Package outline**
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**----- Start of picture text -----**<br>
Plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped) SOT428<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
y<br>E A A<br>b2 A1 E1<br>mounting<br>base D2<br>D1<br>HD<br>2<br>L2 L<br>1 3 L1<br>b1 b w M A c<br>e<br>e1<br>0 5 10 mm<br>scale<br>DIMENSIONS (mm are the original dimensions)<br>UNIT A A1 b b1 b2 c D1 minD2 E minE1 e e1 HD L minL1 L2 w maxy<br>2.38 0.93 0.89 1.1 5.46 0.56 6.22 6.73 10.4 2.95 0.9<br>mm 4.0 4.45 2.285 4.57 0.5 0.2 0.2<br>2.22 0.46 0.71 0.9 5.00 0.20 5.98 6.47 9.6 2.55 0.5<br>OUTLINE REFERENCES EUROPEAN<br>ISSUE DATE<br>VERSION IEC JEDEC JEITA PROJECTION<br>06-02-14<br>SOT428 TO-252 SC-63<br>06-03-16<br>**----- End of picture text -----**<br>
## **Fig 13. Package outline SOT428 (DPAK)**
© NXP B.V. 2006. All rights reserved.
BT151S_SER_L_R_5
**Rev. 05 — 9 October 2006**
**Product data sheet**
**9 of 13**
**BT151S series L and R**
**NXP Semiconductors**
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## **8. Mounting**
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**----- Start of picture text -----**<br>
7.0<br>7.0<br>2.15 1.5<br>2.5<br>4.57<br>001aab021<br>Plastic meets requirements of UL94 V-O at 3.175 mm<br>Fig 14. SOT428: minimum pad size for surface-mounting<br>**----- End of picture text -----**<br>
© NXP B.V. 2006. All rights reserved.
BT151S_SER_L_R_5
**Rev. 05 — 9 October 2006**
**Product data sheet**
**10 of 13**
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## **9. Revision history**
## **Table 6. Revision history**
|**Document ID**|**Release date**|**Data sheet status**|**Change notice**|**Supersedes**|
|---|---|---|---|---|
|BT151S_SER_L_R_5|20061009|Product data sheet|-|BT151S_SERIES_4|
|Modifcations:|**•** The format of|this data sheet has been|redesigned to comply|with the new identity|
||guidelines of NXP Semiconductors.||||
||**•** Legal texts have been adapted to the new company name where appropriate.||||
||**•** Added type numbers BT151S-500L and BT151S-650L||||
|BT151S_SERIES_4|20040609|Product specifcation|-|BT151S_SERIES_3|
|(9397 750 13161)|||||
|BT151S_SERIES_3|20020101|Product specifcation|-|BT151S_SERIES_2|
|BT151S_SERIES_2|19990601|Product specifcation|-|BT151S_SERIES_1|
|BT151S_SERIES_1|19970901|Product specifcation|-|-|
© NXP B.V. 2006. All rights reserved.
BT151S_SER_L_R_5 **Product data sheet**
**Rev. 05 — 9 October 2006**
**11 of 13**
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## **10. Legal information**
## **10.1 Data sheet status**
|**Document statu**|**s**<br>**[1]**<br>**[2]**<br>**Product status**<br>**[3]**<br>**Defnition**|
|---|---|
|Objective [short] data sheet<br>Development<br>This document contains data from the objective specifcation for product development.||
|Preliminary [short] data sheet<br>Qualifcation<br>This document contains data from the preliminary specifcation.||
|Product [short] data sheet<br>Production<br>This document contains the product specifcation.||
[1] Please consult the most recently issued document before initiating or completing a design.
[2]
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
## **10.2**
**Draft —** The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information.
**Short data sheet —** A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
## **10.3 Disclaimers**
**General —** Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information.
**Right to make changes —** NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.
**Suitability for use —** NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or
malfunction of a NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk.
**Applications —** Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification.
**Limiting values —** the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability.
**Terms and conditions of sale —** NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail.
**No offer to sell or license —** Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.
## **10.4 Trademarks**
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
## **11. Contact information**
For additional information, please visit: **http://www.nxp.com**
**salesaddresses@nxp.com**
© NXP B.V. 2006. All rights reserved.
BT151S_SER_L_R_5 **Product data sheet**
**Rev. 05 — 9 October 2006**
**12 of 13**
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## **12. Contents**
|**1**|**Product profle . . . . . . . . . . . . . . . . . . . . . . . . . . 1**|
|---|---|
|1.1|General description. . . . . . . . . . . . . . . . . . . . . . 1|
|1.2|Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1|
|1.3|Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1|
|1.4|Quick reference data. . . . . . . . . . . . . . . . . . . . . 1|
|**2**|**Pinning information. . . . . . . . . . . . . . . . . . . . . . 1**|
|**3**|**Ordering information . . . . . . . . . . . . . . . . . . . . . 2**|
|**4**|**Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2**|
|**5**|**Thermal characteristics. . . . . . . . . . . . . . . . . . . 5**|
|**6**|**Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 6**|
|**7**|**Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9**|
|**8**|**Mounting. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10**|
|**9**|**Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11**|
|**10**|**Legal information. . . . . . . . . . . . . . . . . . . . . . . 12**|
|10.1|Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12|
|10.2|Defnitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12|
|10.3|Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12|
|10.4|Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12|
|**11**|**Contact information. . . . . . . . . . . . . . . . . . . . . 12**|
|**12**|**Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13**|
**==> picture [151 x 121] intentionally omitted <==**
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’.
**© NXP B.V. 2006.**
**All rights reserved.**
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com **Date of release: 9 October 2006 Document identifier: BT151S_SER_L_R_5**
Updated at April 29, 2026
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
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